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1. 发明授权

US5219500A Silicon nitride sintered body and process for preparation thereof 失效
标题翻译：硅氮化物烧结体及其制备方法
公开(公告)号：US5219500A
公开(公告)日：1993-06-15
申请号：US446598
申请日：1989-12-06
申请人： Makoto Yoshida , Masahiro Sato , Kazunori Koga , Kazumi Osamura , Shoji Kousaka , Tatsumi Maeda , Kiyoshi Yokoyama , Masafumi Matsunaka
发明人： Makoto Yoshida , Masahiro Sato , Kazunori Koga , Kazumi Osamura , Shoji Kousaka , Tatsumi Maeda , Kiyoshi Yokoyama , Masafumi Matsunaka
IPC分类号： C04B35/593
CPC分类号： C04B35/5935
摘要： Disclosed is a silicon nitride sintered body comprising 85 to 99 mole % of .beta.-Si.sub.3 N.sub.4, 1 to 5 mole % as the oxide (M.sub.2 O.sub.3) of at least one compound of an element (M) selected from the group consisting of Sc, Vb, Er, Ho and Dy and less than 10 mole % of excessive oxygen (O.sub.2) based on the three components, wherein the excessive oxygen/M.sub.2 O.sub.3 molar ratio is lower than 2.
摘要翻译：公开了一种氮化硅烧结体，其包含85至99摩尔％的β-Si 3 N 4，1至5摩尔％的至少一种元素（M）的化合物的氧化物（M 2 O 3），其选自Sc，Vb， Er，Ho和Dy，并且基于三种组分小于10摩尔％的过量氧（O 2），其中过量的氧/ M 2 O 3摩尔比低于2。

2. 发明授权

US4920085A Silicon nitride sintered body and process for preparation thereof 失效
标题翻译：氮化硅烧结体及其制备方法
公开(公告)号：US4920085A
公开(公告)日：1990-04-24
申请号：US176605
申请日：1988-04-01
申请人： Makoto Yoshida , Masahiro Sato , Kazunori Koga , Kazumi Osamura , Shoji Kousaka , Tatsumi Maeda , Kiyoshi Yokoyama , Masafumi Matsunaka
发明人： Makoto Yoshida , Masahiro Sato , Kazunori Koga , Kazumi Osamura , Shoji Kousaka , Tatsumi Maeda , Kiyoshi Yokoyama , Masafumi Matsunaka
IPC分类号： C04B35/593
CPC分类号： C04B35/5935
摘要： Disclosed is a silicon nitride sintered body comprising 85 to 99 mol % of .beta.-Si.sub.3 N.sub.4, 1 to 5 mol % as the oxide (M.sub.2 O.sub.3) of at least one compound of an element (M) selected from the group consisting of Sc, Vb, Er, Ho and Dy and less than 10 mol % of excessive oxygen (O.sub.2) based on the three components, wherein the excessive oxygen/M.sub.2 O.sub.3 molar ratio is lower than 2.
摘要翻译：公开了一种氮化硅烧结体，其包含85至99mol％的β-Si 3 N 4，1至5mol％的至少一种元素（M）的化合物的氧化物（M 2 O 3），其选自Sc，Vb， Er，Ho和Dy，并且基于三种组分小于10mol％的过量氧（O 2），其中过量的氧/ M 2 O 3摩尔比低于2。

3. 发明授权

US5114889A Silicon nitride sintered body and process for preparation thereof 失效
标题翻译：氮化硅烧结体及其制备方法
公开(公告)号：US5114889A
公开(公告)日：1992-05-19
申请号：US618480
申请日：1990-11-27
申请人： Kazumi Osamura , Masaki Terazono , Shoji Kohsaka , Kazunori Koga , Akira Saito , Masahiro Sato , Hideki Uchimura
发明人： Kazumi Osamura , Masaki Terazono , Shoji Kohsaka , Kazunori Koga , Akira Saito , Masahiro Sato , Hideki Uchimura
IPC分类号： C04B35/593
CPC分类号： C04B35/593
摘要： Disclosed is a silicon nitride sintered body comprising 70 to 99 mole % of silicon nitride, 0.1 to 5 moles % of a rare earth element oxide and up to 25 moles % of silicon oxide and having a silicon oxide-to-rare earth element oxide molar ratio of from 2 to 25, wherein silicon nitride crystal grains have a fine acicular structure having an average particle major axis of up to 7 .mu.m and an average aspect ratio of at least 3.
摘要翻译：公开了一种氮化硅烧结体，其包含70至99摩尔％的氮化硅，0.1至5摩尔％的稀土元素氧化物和至多25摩尔％的氧化硅，并且具有氧化硅与稀土元素氧化物摩尔比例为2至25，其中氮化硅晶粒具有平均粒子长轴高达7μm，平均纵横比至少为3的细针状结构。

4. 发明授权

US5681995A Ultrasonic flaw detecting apparatus for inspecting multi-layer structure and method thereof 失效
标题翻译：用于检查多层结构的超声波探伤仪及其方法
公开(公告)号：US5681995A
公开(公告)日：1997-10-28
申请号：US614184
申请日：1996-03-12
申请人： Takehiro Ooura , Kazunori Koga , Fuminobu Takahashi , Norio Awamura
发明人： Takehiro Ooura , Kazunori Koga , Fuminobu Takahashi , Norio Awamura
IPC分类号： G01N29/00 , G01N29/04 , G01N29/11 , G01N29/34 , G01N29/44 , G01N29/48 , G01N29/06 , G01N29/10
CPC分类号： G01N29/343 , G01N29/11 , G01N29/348 , G01N29/48 , G01N2291/0231 , G01N2291/044 , G01N2291/103
摘要： An ultrasonic flaw detecting apparatus for efficiently detecting a flaw existing in a deep portion of a multi-layer structure includes a first sensor arranged so as to transmit an ultrasonic wave into a different property layer surrounded by a medium having a different acoustic impedance in the multi-layer structure, a function generator for generating a pulse-shaped sine wave, a power amplifier for amplifying and supplying the pulse-shaped sine wave to the first sensor, a second sensor arranged so as to receive a boundary echo from the different property layer, a first amplifier for amplifying the boundary echo received by the second sensor, an intensity detector for judging the intensity of an amplified signal of the boundary echo, a third sensor arranged so as to receive an echo from a flaw inside a layer in a deep portion of the different property layer, a second amplifier for amplifying the flaw echo received by the third sensor, a recorder for recording the amplified flaw echo signal, and a control unit for reading data from the intensity detector and outputting commands to the function generator and the recorder.
摘要翻译：一种用于有效检测存在于多层结构的深部中的缺陷的超声波探伤装置，包括：第一传感器，被布置成将超声波传输到由多重声音阻抗不同的介质围绕的不同特性层层结构，用于产生脉冲形正弦波的函数发生器，用于将脉冲形正弦波放大并提供给第一传感器的功率放大器，布置成接收来自不同特性层的边界回波的第二传感器用于放大由第二传感器接收的边界回波的第一放大器，用于判断边界回波的放大信号的强度的强度检测器，布置成从深度上的层内的缺陷接收回波的第三传感器不同属性层的部分，用于放大由第三传感器接收的缺陷回波的第二放大器，用于记录放大的缺陷回波信号si 以及用于从强度检测器读取数据并将命令输出到功能发生器和记录器的控制单元。

5. 发明申请

US20060269690A1 Formation technology for nanoparticle films having low dielectric constant 审中-公开
标题翻译：具有低介电常数的纳米颗粒膜的形成技术
公开(公告)号：US20060269690A1
公开(公告)日：2006-11-30
申请号：US11139311
申请日：2005-05-27
申请人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura , Shingo Ikeda , Nobuo Matsuki , Atsuki Fukazawa
发明人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura , Shingo Ikeda , Nobuo Matsuki , Atsuki Fukazawa
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/401 , B82Y30/00 , H01L21/02126 , H01L21/02167 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02337 , H01L21/02348 , H01L21/3121 , H01L21/3148 , H01L21/31633 , H01L21/7682 , H01L2221/1047
摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed between upper and lower electrodes inside the reactor while controlling a temperature gradient between the substrate and the upper electrode at about 100° C./cm or less.
摘要翻译：形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并且将在基板上产生的细颗粒沉积在反应器内部的上下电极之间，同时以约100℃/ cm以下的方式控制基板和上电极之间的温度梯度。

6. 发明授权

US4736630A Apparatus and method for sending out and receiving ultrasonic wave signals 失效
标题翻译：发送和接收超声波信号的装置和方法
公开(公告)号：US4736630A
公开(公告)日：1988-04-12
申请号：US891644
申请日：1986-08-01
申请人： Fuminobu Takahashi , Kazunori Koga , Satoshi Ogura , Masahiro Koike
发明人： Fuminobu Takahashi , Kazunori Koga , Satoshi Ogura , Masahiro Koike
IPC分类号： G01N29/26 , G01S15/89 , G10K11/34 , G01N29/00
CPC分类号： G01S15/8925 , G01N29/262 , G01S15/8918 , G01S15/8927 , G10K11/345 , G01S7/5209
摘要： An ultrasonic inspection apparatus and method in which a linear array of acoustic transmitters and receivers are disposed adjacent to a workpiece, and alternating potential source is connected to some of the acoustic transmitters to project a side lobe of an acoustic wave toward a specific zone of the workpiece. Thereafter, the connections between some of the acoustic transmitters and the potential source are automatically changed, to move the specific zone as many times as may be necessary to provided scanning of the workpiece.
摘要翻译：一种超声波检查装置和方法，其中声发射器和接收器的线性阵列邻近工件设置，并且交替的电位源连接到一些声发射器，以使声波的旁瓣朝向工件。此后，一些声发射器和电位源之间的连接被自动地改变，以便将特定区域移动到为了提供工件的扫描而需要的次数。

7. 发明授权

US4615217A Two-probe ultrasonic flaw detection apparatus 失效
标题翻译：双探头超声波探伤仪
公开(公告)号：US4615217A
公开(公告)日：1986-10-07
申请号：US709704
申请日：1985-03-08
申请人： Masahiro Koike , Fuminobu Takahashi , Satoshi Ogura , Kazunori Koga
发明人： Masahiro Koike , Fuminobu Takahashi , Satoshi Ogura , Kazunori Koga
IPC分类号： G01N29/04 , G01N29/11 , G01N29/26
CPC分类号： G01N29/11 , G01N29/4454 , G01N2291/044 , G01N2291/102 , G01N2291/2693 , G01N2291/2695
摘要： A two-probe ultrasonic flaw detection apparatus, in which an ultrasonic wave is transmitted from a transmission probe into an object being inspected and ultrasonic waves reflected from a reflection surface in the object are received by a reception probe, operates to determine the position at which the combined intensity of ultrasonic waves reflected from each part of the reflection surface form a maximum. The reception probe is then moved to the position of maximum reception intensity. The position of maximum reception intensity is determined using as input parameters the ultrasonic characteristics of the object being inspected and of the transmission and reception probes, and the position of the transmission probe and the angle of incidence of the ultrasonic wave into the object.
摘要翻译：一种双探头超声波探伤装置，其中超声波从传输探头传输到被检查物体中，并且由物体的反射面反射的超声波由接收探头接收，操作以确定位置从反射表面的每个部分反射的超声波的组合强度形成最大值。然后将接收探头移动到最大接收强度的位置。使用作为被检查对象的超声波特性和发送接收探头的输入参数以及发送探针的位置和超声波入射到对象中的角度来确定最大接收强度的位置。

8. 发明申请

US20120315684A1 Plasma Oxidation-Reduction Method, Method for Promoting Plant/Animal Growth Using the Same, and Plasma-Generating Device for Use in Method for Promoting Plant/Animal Growth 审中-公开
标题翻译：等离子体氧化还原方法，使用该方法促进植物/动物生长的方法和用于促进植物/动物生长的方法中的等离子体发生装置
公开(公告)号：US20120315684A1
公开(公告)日：2012-12-13
申请号：US13575986
申请日：2011-01-31
申请人： Nobuya Hayashi , Akari Nakahigashi , Masaharu Shiratani , Kazunori Koga
发明人： Nobuya Hayashi , Akari Nakahigashi , Masaharu Shiratani , Kazunori Koga
IPC分类号： C12N13/00 , A01G7/04 , B01J19/12
CPC分类号： A01H3/00 , H05H1/2406 , H05H2001/2431
摘要： Provided is a plasma oxidation-reduction method with which it is possible to control the structure of amino acids and proteins with high and stable reproducibility, by using plasma in order to control the amino acids and proteins that make up a living body, particularly by using plasma in order to oxidize or reduce amino acids and proteins. Also provided are a method for promoting plant/animal growth using the plasma oxidation-reduction method, and a plasma-generating device for use in the method for promoting plant/animal growth. Amino acids or proteins are oxidized or reduced in the plasma oxidation-reduction method by using an active oxygen species or active hydrogen in the plasma. Preferably, the active oxygen species comprises any one of singlet oxygen atoms, excited oxygen molecules, or hydroxyl radicals, and the active hydrogen comprises excited hydrogen atoms.
摘要翻译：提供了一种等离子体氧化还原方法，可以通过使用等离子体来控制构成活体的氨基酸和蛋白质，特别是通过使用等离子体氧化还原方法，可以以高而稳定的再现性来控制氨基酸和蛋白质的结构血浆以氧化或还原氨基酸和蛋白质。还提供了使用等离子体氧化还原法促进植物/动物生长的方法，以及用于促进植物/动物生长的方法中的等离子体产生装置。通过在等离子体中使用活性氧或活性氢，在等离子体氧化 - 还原方法中氧化或还原氨基酸或蛋白质。优选地，活性氧物质包括单线态氧原子，被激发的氧分子或羟基自由基中的任何一种，活性氢包括激发的氢原子。

9. 发明申请

US20080008640A1 Cluster-Free Amorphous Silicon Film, and Method and Apparatus for Producing the Same 审中-公开
标题翻译：无簇无定形硅膜及其制造方法和装置
公开(公告)号：US20080008640A1
公开(公告)日：2008-01-10
申请号：US11661053
申请日：2005-08-17
申请人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga
发明人： Yukio Watanabe , Masaharu Shiratani , Kazunori Koga
IPC分类号： H01L21/205 , C01B33/027 , H01L31/04 , C23C16/24
CPC分类号： C23C16/24 , C23C16/45502 , C23C16/509 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L31/03767 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The intention is to clarify characteristics of a cluster-free amorphous silicon film which is practically produceable without incorporation of large clusters having a size of 1 nm or more, and provide a method and an apparatus for producing the amorphous silicon film. In the cluster-free amorphous silicone (a-Si:H) film, an in-film Si—H2 bond density is 10−2 atomic % or less, and an in-film volume fraction of the large clusters is 10−1% or less. The a-Si:H film is produced by depositing, on a substrate, a deposition material in a plasma flow of any one of a silane gas, a disilane gas and a gas obtained by diluting a silane or disilane gas with one or a combination of two or more selected from the group consisting of hydrogen, Ar, He, Ne and Xe. The a-Si:H film has prominent characteristics, such that: a light-induced defect density is reduced from 2×1016 cm−3 or more in conventional a-Si:H films to substantially zero; a stabilized efficiency (%), i.e., a light-energy conversion efficiency, is increased from 9% at the highest in existing a-Si:H films up to 14% or more; and a light-induced degradation rate, i.e., [(initial efficiency−stabilized efficiency)/initial efficiency]×100%, is reduced from 20% at the lowest in the existing a-Si:H films to substantially zero.
摘要翻译：本发明是为了阐明实际上可产生的无簇非晶硅膜的特征，而不引入具有1nm或更大尺寸的大簇的聚簇，并提供一种制造非晶硅膜的方法和装置。在无簇无定形硅氧烷（a-Si：H）膜中，膜内Si-H 2键密度为原子百分比的10％以下，大簇的膜内体积分数为10〜1％以下。 a-Si：H膜通过在硅烷气体，乙硅烷气体和通过用一种或组合稀释硅烷或乙硅烷气体获得的气体中的任何一种的等离子体流中沉积在基板上的沉积材料来制备选自氢，Ar，He，Ne和Xe中的两种或更多种。 a-Si：H膜具有突出的特性，使得：在常规a-Si：H膜中，光诱导缺陷密度从2×10 16 cm -3以下降低， H电影基本为零; 稳定效率（％），即光能转换效率从现有a-Si：H膜最高的14％增加到14％以上; 并且光诱导的降解速率，即[（初始效率稳定效率）/初始效率]×100％从现有的a-Si：H膜中最低的20％降低到基本上为零。

10. 发明申请

US20060105583A1 Formation technology of nano-particle films having low dielectric constant 审中-公开
标题翻译：具有低介电常数的纳米颗粒膜的形成技术
公开(公告)号：US20060105583A1
公开(公告)日：2006-05-18
申请号：US10990562
申请日：2004-11-17
申请人： Shingo Ikeda , Nobuo Matsuki , Yoshinori Morisada , Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura
发明人： Shingo Ikeda , Nobuo Matsuki , Yoshinori Morisada , Yukio Watanabe , Masaharu Shiratani , Kazunori Koga , Shota Nunomura
IPC分类号： H01L21/31
CPC分类号： C23C16/509 , C23C16/401 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/31695
摘要： A method for forming a low dielectric constant film includes the steps of: introducing reaction gas comprising an organo Si gas and an inert gas into a reactor of a capacitively-coupled CVD apparatus; adjusting a size of fine particles being generated in the vapor phase to a nanometer order size as a function of a plasma discharge period inside the reactor; and depositing fine particles generated on a substrate being placed inside the reactor.
摘要翻译：形成低介电常数膜的方法包括以下步骤：将包含有机硅气体和惰性气体的反应气体引入电容耦合CVD设备的反应器中; 将在气相中产生的细颗粒的尺寸调节为纳米级尺寸作为反应器内的等离子体放电周期的函数; 并沉积在放置在反应器内的衬底上产生的微粒。

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