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1. 发明授权

US06828626B2 Semiconductor device with vertical transistors 有权
标题翻译：具有垂直晶体管的半导体器件
公开(公告)号：US06828626B2
公开(公告)日：2004-12-07
申请号：US10253901
申请日：2002-09-25
申请人： Makoto Oikawa , Hiroki Etou , Hirotoshi Kubo , Shouji Miyahara
发明人： Makoto Oikawa , Hiroki Etou , Hirotoshi Kubo , Shouji Miyahara
IPC分类号： H01L2978
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/1095 , H01L29/4236 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.
摘要翻译：在常规功率MOSFET中，在操作区域的最外周的栅电极底部产生电场浓度，从而导致漏极与源极之间或集电极与发射极之间的高电压强度的劣化。在本发明中，操作区域的最外周的沟槽比操作区域的沟槽浅。由此，减轻了操作区域的最外周的栅电极底部的电场浓度，并且抑制了漏极与源极之间的高电压强度的劣化。此外，通过使最外周沟槽开口部分变窄，可以通过相同的步骤形成深度不同的沟槽。

2. 发明授权

US06967139B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06967139B2
公开(公告)日：2005-11-22
申请号：US10893223
申请日：2004-07-19
申请人： Makoto Oikawa , Hiroki Etou , Hirotoshi Kubo , Shouji Miyahara
发明人： Makoto Oikawa , Hiroki Etou , Hirotoshi Kubo , Shouji Miyahara
IPC分类号： H01L29/06 , H01L21/336 , H01L29/10 , H01L29/423 , H01L29/78 , H01L21/8234
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/1095 , H01L29/4236 , H01L29/66348 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： In a conventional power MOSFET, an electric field concentration occurs at a gate electrode bottom portion on the outermost periphery of an operating area, thereby causing a deterioration in high voltage strength between the drain and the source, or between the collector and emitter. In this invention, a trench at the outermost periphery of an operating area is shallower than trenches of the operating area. Thereby, the electric field concentration at the gate electrode bottom portion on the outermost periphery of the operating area is relieved, and a deterioration in high voltage strength between the drain and source is suppressed. Furthermore, by narrowing the outermost peripheral trench aperture portion, trenches different in depth can be formed by an identical step.
摘要翻译：在常规功率MOSFET中，在操作区域的最外周的栅电极底部产生电场浓度，从而导致漏极与源极之间或集电极与发射极之间的高电压强度的劣化。在本发明中，操作区域的最外周的沟槽比操作区域的沟槽浅。由此，减轻了操作区域的最外周的栅电极底部的电场浓度，并且抑制了漏极与源极之间的高电压强度的劣化。此外，通过使最外周沟槽开口部分变窄，可以通过相同的步骤形成深度不同的沟槽。

3. 发明授权

US5915179A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5915179A
公开(公告)日：1999-06-22
申请号：US660479
申请日：1996-06-07
申请人： Hiroki Etou , Kazunori Ohno , Takaaki Saito , Naofumi Tsuchiya , Toshinari Utsumi
发明人： Hiroki Etou , Kazunori Ohno , Takaaki Saito , Naofumi Tsuchiya , Toshinari Utsumi
IPC分类号： H01L29/872 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/088 , H01L29/06 , H01L29/47 , H01L29/78
CPC分类号： H01L29/66712 , H01L27/0629 , H01L29/7806 , H01L2224/48247 , H01L29/0619 , H01L29/0638 , H01L29/0696 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091
摘要： In the present invention, a vertical type MOSFET and a Schottky barrier diode which are used as a switching device of a DC--DC converter are formed on the same semiconductor substrate. Further, a barrier metal which is required for the Schottky barrier diode is also formed on an electrode portion of the vertical type MOSFET. In addition, a Schottky barrier diode forming region is formed to have low impurity concentration than a vertical type MOSFET forming region.
摘要翻译：在本发明中，在相同的半导体衬底上形成用作DC-DC转换器的开关器件的垂直型MOSFET和肖特基势垒二极管。此外，肖特基势垒二极管所需的阻挡金属也形成在垂直型MOSFET的电极部分上。此外，肖特基势垒二极管形成区域形成为具有比垂直型MOSFET形成区域低的杂质浓度。

4. 发明申请

US20050029588A1 Protection circuit device using MOSFETs and a method of manufacturing the same 审中-公开
标题翻译：使用MOSFET的保护电路装置及其制造方法
公开(公告)号：US20050029588A1
公开(公告)日：2005-02-10
申请号：US10941183
申请日：2004-09-15
申请人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Hirokazu Fukuda , Hiroki Etou , Kouji Takahashi
发明人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Hirokazu Fukuda , Hiroki Etou , Kouji Takahashi
IPC分类号： H01L27/04 , H01L21/48 , H01L21/822 , H01L23/31 , H01L23/49 , H01L23/58 , H01L29/78 , H01L29/76
CPC分类号： H01L23/3107 , H01L21/4832 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68377 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET, and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
摘要翻译：使用MOSFET的保护电路装置具有多个电气分离的导电路径，将芯片中的两个功率MOSFET集成在一个芯片中的MOSFET芯片，其中栅电极和源电极固定在期望的导电路径上，设置在公共漏极上的导电材料的MOSFET，以及覆盖所述MOSFET的绝缘树脂，并且将所述导电路径支撑在一个主体中。除去公共漏电极的附近并将源电极直接固定在导电路径上，实现低导通状态电阻。

5. 发明授权

US07554104B2 Bolt and semiconductor manufacturing apparatus 有权
标题翻译：螺栓和半导体制造设备
公开(公告)号：US07554104B2
公开(公告)日：2009-06-30
申请号：US11724223
申请日：2007-03-15
申请人： Yoshirou Shimada , Hiroki Etou , Ryou Kashihara
发明人： Yoshirou Shimada , Hiroki Etou , Ryou Kashihara
IPC分类号： H01J37/317
CPC分类号： H01L21/68785
摘要： A bolt includes a main body and a spring pin. The main body includes a head and a shaft. The spring pin includes a base portion and an end portion. The shaft includes a portion of external thread and a hollow portion. The head includes a top surface and a hole opened in the top surface. The hole is connected to the hollow portion. The base portion is arranged in the hollow potion to move along an axis of the main body. The end portion is arranged in the hole to move along the axis. The spring pin is energized toward a side of the head such that the end portion protrudes beyond the top surface. The end portion is electrically connected to the portion of external thread.
摘要翻译：螺栓包括主体和弹簧销。主体包括头部和轴部。弹簧销包括基部和端部。轴包括一部分外螺纹和一中空部分。头部包括顶表面和在顶表面中打开的孔。孔连接到中空部分。基部布置在中空部分中以沿着主体的轴线移动。端部布置在孔中以沿轴线移动。弹簧销朝向头部的一侧被激励，使得端部突出超过顶部表面。端部电连接到外螺纹的一部分。

6. 发明申请

US20070243057A1 Bolt and semiconductor manufacturing apparatus 有权
标题翻译：螺栓和半导体制造设备
公开(公告)号：US20070243057A1
公开(公告)日：2007-10-18
申请号：US11724223
申请日：2007-03-15
申请人： Yoshirou Shimada , Hiroki Etou , Ryou Kashihara
发明人： Yoshirou Shimada , Hiroki Etou , Ryou Kashihara
IPC分类号： H01L21/04 , H01L23/544
CPC分类号： H01L21/68785
摘要： A bolt includes a main body and a spring pin. The main body includes a head and a shaft. The spring pin includes a base portion and an end portion. The shaft includes a portion of external thread and a hollow portion. The head includes a top surface and a hole opened in the top surface. The hole is connected to the hollow portion. The base portion is arranged in the hollow potion to move along an axis of the main body. The end portion is arranged in the hole to move along the axis. The spring pin is energized toward a side of the head such that the end portion protrudes beyond the top surface. The end portion is electrically connected to the portion of external thread.
摘要翻译：螺栓包括主体和弹簧销。主体包括头部和轴部。弹簧销包括基部和端部。轴包括一部分外螺纹和一中空部分。头部包括顶表面和在顶表面中打开的孔。孔连接到中空部分。基部布置在中空部分中以沿着主体的轴线移动。端部布置在孔中以沿轴线移动。弹簧销朝向头部的一侧被激励，使得端部突出超过顶部表面。端部电连接到外螺纹的一部分。

7. 发明授权

US07211868B2 Protection circuit device using MOSFETs and a method of manufacturing the same 失效
标题翻译：使用MOSFET的保护电路装置及其制造方法
公开(公告)号：US07211868B2
公开(公告)日：2007-05-01
申请号：US09809856
申请日：2001-03-16
申请人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Hirokazu Fukuda , Hiroki Etou , Kouji Takahashi
发明人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Hirokazu Fukuda , Hiroki Etou , Kouji Takahashi
IPC分类号： H01L23/62
CPC分类号： H01L23/3107 , H01L21/4832 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68377 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/97 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01059 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/12042 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source electrode are fixed on the desired conductive path, conductive material provided on a common drain electrode of the MOSFET, and insulating resin covering said MOSFET and supporting said conductive path in one body. Removing a drawing-around of the common drain electrode and fixing the source electrode directly on the conductive path, low ON-state resistance is realized.
摘要翻译：使用MOSFET的保护电路装置具有多个电气分离的导电路径，将芯片中的两个功率MOSFET集成在一个芯片中的MOSFET芯片，其中栅电极和源电极固定在期望的导电路径上，设置在公共漏极上的导电材料的MOSFET，以及覆盖所述MOSFET并且将所述导电路径支撑在一个主体中的绝缘树脂。除去公共漏电极的附近并将源电极直接固定在导电路径上，实现低导通状态电阻。

8. 发明授权

US06545364B2 Circuit device and method of manufacturing the same 有权
公开(公告)号：US06545364B2
公开(公告)日：2003-04-08
申请号：US09810110
申请日：2001-03-16
申请人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi , Hirokazu Fukuda , Hiroki Etou
发明人： Noriaki Sakamoto , Yoshiyuki Kobayashi , Junji Sakamoto , Shigeaki Mashimo , Katsumi Okawa , Eiju Maehara , Kouji Takahashi , Hirokazu Fukuda , Hiroki Etou
IPC分类号： H01L2348
CPC分类号： H01L24/40 , H01L21/4821 , H01L21/4832 , H01L23/3107 , H01L23/49562 , H01L24/37 , H01L24/48 , H01L24/49 , H01L24/97 , H01L2221/68377 , H01L2224/05599 , H01L2224/16 , H01L2224/32225 , H01L2224/32245 , H01L2224/33181 , H01L2224/371 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48464 , H01L2224/48465 , H01L2224/49111 , H01L2224/73265 , H01L2224/83801 , H01L2224/8485 , H01L2224/85399 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01059 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/07802 , H01L2924/09701 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/19043 , H01L2924/19105 , H01L2924/3511 , H05K1/185 , H05K3/06 , H01L2224/81 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： After a trench 54 is formed in a conductive foil 60, a circuit element is mounted in a flip chip method. Then, an insulating resin 50 is covered on the conductive foil 60 as a support substrate. After reversion, the conductive foil 60 is polished over the insulating resin 50 as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths 51 and the circuit elements 52 supported by the insulating resin 50 can be produced without employing the support substrate.

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