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1. 发明申请

US20120074577A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING OF SEMICONDUCTOR DEVICE, AND SWITCHING CIRCUIT 有权
标题翻译：半导体器件，制造半导体器件的方法和开关电路
公开(公告)号：US20120074577A1
公开(公告)日：2012-03-29
申请号：US13077999
申请日：2011-04-01
申请人： Makoto Nakanishi , Tomoo Yamanouchi , Junichi Okayasu , Taku Sato , Daiju Terasawa , Masahiko Takikawa
发明人： Makoto Nakanishi , Tomoo Yamanouchi , Junichi Okayasu , Taku Sato , Daiju Terasawa , Masahiko Takikawa
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L29/0696 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode; a ground side electrode connecting section that connects the ground side electrodes to each other; a signal side electrode connecting section that connects the signal side electrodes to each other; and ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near another end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.
摘要翻译：提供具有低泄漏电流的半导体器件是目的。半导体器件包括交替地布置在半导体衬底上的多个接地侧电极和多个信号侧电极; 分别布置在每对接地侧电极和信号侧电极之间的多个控制电极; 将接地侧电极彼此连接的接地侧电极连接部; 信号侧电极连接部，其将信号侧电极彼此连接; 以及接地侧引线和信号侧引线，其分别从布置的电极部的靠近一端的区域和靠近另一端的区域延伸，其中接地侧电极和信号侧电极沿排列方向排列从排列的电极组沿排列方向。

2. 发明授权

US08466566B2 Semiconductor device, method for manufacturing of semiconductor device, and switching circuit 有权
标题翻译：半导体装置，半导体装置的制造方法以及开关电路
公开(公告)号：US08466566B2
公开(公告)日：2013-06-18
申请号：US13077999
申请日：2011-04-01
申请人： Makoto Nakanishi , Tomoo Yamanouchi , Junichi Okayasu , Taku Sato , Daiju Terasawa , Masahiko Takikawa
发明人： Makoto Nakanishi , Tomoo Yamanouchi , Junichi Okayasu , Taku Sato , Daiju Terasawa , Masahiko Takikawa
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L29/0696 , H01L29/2003 , H01L29/42376 , H01L29/66462 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode; a ground side electrode connecting section that connects the ground side electrodes to each other; a signal side electrode connecting section that connects the signal side electrodes to each other; and ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near another end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.
摘要翻译：提供具有低泄漏电流的半导体器件是目的。半导体器件包括交替地布置在半导体衬底上的多个接地侧电极和多个信号侧电极; 分别布置在每对接地侧电极和信号侧电极之间的多个控制电极; 将接地侧电极彼此连接的接地侧电极连接部; 信号侧电极连接部，其将信号侧电极彼此连接; 以及接地侧引线和信号侧引线，其分别从布置的电极部的靠近一端的区域和靠近另一端的区域延伸，其中接地侧电极和信号侧电极沿排列方向排列从排列的电极组沿排列方向。

3. 发明授权

US08552735B2 Switching apparatus and test apparatus 有权
标题翻译：开关设备和测试仪器
公开(公告)号：US08552735B2
公开(公告)日：2013-10-08
申请号：US13034622
申请日：2011-02-24
申请人： Yoshiyuki Hata , Makoto Nakanishi , Masahiko Takikawa
发明人： Yoshiyuki Hata , Makoto Nakanishi , Masahiko Takikawa
IPC分类号： G01R31/02 , G01R27/08
CPC分类号： G01R31/31924
摘要： To perform a forcible disconnection when voltage outside a reference range is applied to a terminal, provided is a switching apparatus comprising a main switch provided between a first terminal and a second terminal; a voltage detection section that detects whether voltage of the second terminal is within a reference range; and a control section that controls the main switch according to a control signal received from a control terminal and turns OFF the main switch when the voltage of the second terminal is outside the reference range. The voltage detection section includes a detection switch that disconnects the second terminal and the control section from each other when the voltage of the second terminal is within the reference range and connects the second terminal and the control section to each other when the voltage of the second terminal is outside the reference range.
摘要翻译：为了在基准范围以外的电压施加到终端时执行强制断开，提供了一种开关装置，包括：设置在第一端子和第二端子之间的主开关; 电压检测部，其检测所述第二端子的电压是否在参考范围内; 以及控制部，其根据从控制端子接收的控制信号来控制主开关，并且当第二端子的电压在参考范围之外时，断开主开关。电压检测部分包括检测开关，当第二端子的电压在参考范围内时，第二端子和控制部分彼此断开，并且当第二端子和控制部分的电压在第二终端超出参考范围。

4. 发明授权

US5818078A Semiconductor device having a regrowth crystal region 失效
公开(公告)号：US5818078A
公开(公告)日：1998-10-06
申请号：US517041
申请日：1995-08-21
申请人： Kozo Makiyama , Masahiko Takikawa , Satoru Asai , Yusuke Matsukura , Toshihide Kikkawa
发明人： Kozo Makiyama , Masahiko Takikawa , Satoru Asai , Yusuke Matsukura , Toshihide Kikkawa
IPC分类号： H01L21/331 , H01L21/335 , H01L21/8252 , H01L27/06 , H01L29/08 , H01L29/417 , H01L29/45 , H01L29/737 , H01L29/778 , H01L29/80 , H01L29/90 , H01L31/112
CPC分类号： H01L29/66318 , H01L21/8252 , H01L27/0605 , H01L29/0891 , H01L29/41725 , H01L29/452 , H01L29/66462 , H01L29/7371 , H01L29/7783 , H01L29/802
摘要： A method of fabricating a compound semiconductor device includes a step of removing a semiconductor layer by an etching process to expose an upper major surface of an underlying semiconductor layer, followed by a growth of another semiconductor layer of the p-type on the surface thus exposed, wherein the exposed surface is cleaned by a flushing of a gaseous metal organic compound containing a group V element for removing impurities therefrom and further doping the exposed surface to the p-type.

5. 发明授权

US5302840A HEMT type semiconductor device having two semiconductor well layers 失效
标题翻译：具有两个半导体阱层的HEMT型半导体器件
公开(公告)号：US5302840A
公开(公告)日：1994-04-12
申请号：US899699
申请日：1992-06-17
申请人： Masahiko Takikawa
发明人： Masahiko Takikawa
IPC分类号： H01L29/66 , H01L21/338 , H01L27/06 , H01L27/092 , H01L29/778 , H01L29/812 , H01L29/161 , H01L29/205 , H01L29/225
CPC分类号： H01L27/0605 , H01L27/092 , H01L29/7783 , Y10S257/914
摘要： A HEMT type semiconductor device includes a semiconductor substrate, a buffer semiconductor layer formed on the substrate, a first semiconductor well layer formed on the buffer layer and serving as a first conductivity type channel layer, a second semiconductor well layer formed on the first well layer and serving as a second conductivity type opposite the first conductivity, a channel layer and a potential barrier layer formed on the second well layer and forming a potential barrier for carriers. The substrate is made of GaAs or InP, and the layers are successively and epitaxially grown on the substrate. A two dimensional hole gas and a two dimensional electron gas are confined in the first well layer and in the second well layer, respectively.
摘要翻译： HEMT型半导体器件包括半导体衬底，形成在衬底上的缓冲半导体层，形成在缓冲层上并用作第一导电型沟道层的第一半导体阱层，形成在第一阱层上的第二半导体阱层并且用作与第一导电性相反的第二导电类型，形成在第二阱层上并形成载流子的势垒的沟道层和势垒层。衬底由GaAs或InP制成，并且这些层在衬底上连续地并外延生长。二维空穴气体和二维电子气体分别限定在第一阱层和第二阱层中。

6. 发明授权

US5128275A Method for fabricating a semiconductor device including a semi-insulating semiconductor layer 失效
标题翻译：用于制造半导体器件的方法，包括半绝缘半导体层
公开(公告)号：US5128275A
公开(公告)日：1992-07-07
申请号：US649768
申请日：1991-01-25
申请人： Masahiko Takikawa , Tadao Okabe , Toshihide Kikkawa
发明人： Masahiko Takikawa , Tadao Okabe , Toshihide Kikkawa
IPC分类号： H01L21/20 , H01L21/205 , H01L21/338 , H01L21/76 , H01L29/778 , H01L29/812 , H01S5/00
CPC分类号： H01L21/7605 , H01L21/02546 , H01L21/02576 , H01L21/0262 , Y10S148/041 , Y10S148/11
摘要： A method for fabricating a compound semiconductor device having a semi-insulating layer of a group III-V compound semiconductor material that contains arsenic as a group V element. The method includes a step of growing the semi-insulating layer from a source gas of the group V element that contains both arsine and an organic compound of arsenic, wherein arsine and the organic compound of arsenic are used simultaneously with a mixing ratio to achieve a desired high resistivity in the semi-insulating layer.

7. 发明授权

US5104825A Method of producing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5104825A
公开(公告)日：1992-04-14
申请号：US729998
申请日：1991-07-15
申请人： Masahiko Takikawa
发明人： Masahiko Takikawa
IPC分类号： H01L21/76 , H01L21/205 , H01L21/338 , H01L27/095 , H01L29/205 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7783 , H01L27/095 , H01L29/205 , H01L29/7787 , Y10S148/005
摘要： A semiconductor device includes an InP substrate, an intrinsic InGaAs channel layer formed on the InP substrate and lattice matched to the InP substrate, a doped GaAsSb carrier supply layer formed on the intrinsic InGaAs channel layer and lattice matched to the InP substrate, a gate electrode formed on the doped GaAsSb carrier supply layer, and a source electrode and a drain electrode which are respectively formed on the doped GaAsSb carrier supply layer and located on both sides of the gate electrode.

8. 发明授权

US5945695A Semiconductor device with InGaP channel layer 失效
标题翻译：具有InGaP沟道层的半导体器件
公开(公告)号：US5945695A
公开(公告)日：1999-08-31
申请号：US929252
申请日：1997-09-15
申请人： Masahiko Takikawa
发明人： Masahiko Takikawa
IPC分类号： H01L29/812 , H01L21/335 , H01L21/338 , H01L29/778 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/66462 , H01L29/7783
摘要： A semiconductor device comprises a GaAs substrate 10; a buffer layer 12 formed on the GaAs substrate 10 and having a wider band gap than that of InGaP; a channel layer 14 formed on the buffer layer 12 and formed of an InGaP; a gate electrode 34 for controlling current of the channel layer 14. InGaP has a high carrier mobility and large .GAMMA.-L energy difference. Accordingly, the channel layer is formed of InGaP, whereby the semiconductor device which is operable at high speed and high voltage can be obtained.
摘要翻译：半导体器件包括GaAs衬底10; 形成在GaAs衬底10上并具有比InGaP更宽的带隙的缓冲层12; 形成在缓冲层12上并由InGaP形成的沟道层14; 用于控制沟道层14的电流的栅电极34.InGaP具有高的载流子迁移率和大的GAMMA-L能量差。因此，沟道层由InGaP形成，能够获得高速高电压的半导体装置。

9. 发明授权

US5900641A Field effect semiconductor device having a reduced leakage current 失效
标题翻译：场效应半导体器件具有减小的漏电流
公开(公告)号：US5900641A
公开(公告)日：1999-05-04
申请号：US998894
申请日：1997-12-29
申请人： Naoki Hara , Shuichi Tanaka , Masahiko Takikawa
发明人： Naoki Hara , Shuichi Tanaka , Masahiko Takikawa
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L29/812
摘要： A field-effect transistor including a channel layer, a source electrode, a drain electrode, a high-resistance layer provided on the channel layer between the source electrode and the drain electrode and a gate electrode provided in an opening formed in the high-resistance layer, wherein the high-resistance layer is defined by a first side-wall facing the source electrode and a second side-wall facing the drain electrode, such that the first side-wall is separated from the source electrode.
摘要翻译：一种场效应晶体管，包括沟道层，源电极，漏电极，设置在源电极和漏电极之间的沟道层上的高电阻层，以及设置在形成在高电阻中的开口中的栅电极层，其中所述高电阻层由面对所述源电极的第一侧壁和面对所述漏电极的第二侧壁限定，使得所述第一侧壁与所述源电极分离。

10. 发明授权

US4958203A High electron mobility transistor 失效
标题翻译：高电子迁移率晶体管
公开(公告)号：US4958203A
公开(公告)日：1990-09-18
申请号：US115925
申请日：1987-11-02
申请人： Masahiko Takikawa
发明人： Masahiko Takikawa
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/267 , H01L29/778
CPC分类号： H01L29/7787 , H01L29/267
摘要： A high electron mobility transistor comprises a semiinsulating substrate, an undoped channel layer formed on the semiinsulating substrate and made of undoped gallium arsenide (GaAs), a doped carrier supplying layer formed on the undoped channel layer and made of a II-VI family compound semiconductor having an electron affinity smaller than that of the undoped gallium arsenide and having an energy gap greater than that of the undoped gallium arsenide, and source, drain and gate electrodes formed on the doped carrier supplying layer.
摘要翻译：高电子迁移率晶体管包括半绝缘衬底，形成在半绝缘衬底上并由未掺杂的砷化镓（GaAs）制成的未掺杂沟道层，形成在未掺杂沟道层上并由II-VI族化合物半导体具有小于未掺杂的砷化镓的电子亲和力，并且具有大于未掺杂的砷化镓的能隙，以及形成在掺杂载流子供应层上的源极，漏极和栅电极。

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