会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Solar cell sealing film and solar cell using the sealing film
    • 太阳能电池密封膜和太阳能电池使用密封膜
    • US08791182B2
    • 2014-07-29
    • US13129040
    • 2009-11-11
    • Tetsuro IkedaHisataka KataokaYoshihiko Inoue
    • Tetsuro IkedaHisataka KataokaYoshihiko Inoue
    • C08K5/524H01L31/0216
    • B32B17/10678B32B17/10788C08K5/14C08L23/0853H01L31/0481Y02E10/50C08L83/00C08L2666/02
    • The object of the present invention is to provide a solar cell sealing film obtained from a composition comprising chiefly ethylene-vinyl acetate copolymer and organic peroxides for giving crosslinked structure, which suppresses the occurrence of blisters without reduction of crosslink rate, even if the film contains silane-coupling agents for improving adhesive strength. The solar cell sealing film comprises ethylene-vinyl acetate copolymer, an organic peroxide, a silane-coupling agent, and a phosphite compound represented by formula (I): P(OR1)3  (I) wherein, R1 is a branched-chain aliphatic alkyl group having 8 to 14 carbon atoms, and three R1s are the same as or different from each other and further wherein the content of the vinyl acetate recurring unit of the ethylene-vinyl acetate copolymer is in the range of 20 to 35% by weight.
    • 本发明的目的是提供一种太阳能电池密封膜,其由主要由乙烯 - 乙酸乙烯酯共聚物和有机过氧化物组成的组合物获得,用于产生交联结构,即使该膜含有,也抑制了起泡而不降低交联速率 用于提高粘合强度的硅烷偶联剂。 太阳能电池密封膜包括乙烯 - 乙酸乙烯酯共聚物,有机过氧化物,硅烷偶联剂和由式(I)表示的亚磷酸酯化合物:P(OR 1)3(I)其中,R 1是支链脂族 具有8至14个碳原子的烷基和3个R 1彼此相同或不同,并且其中乙烯 - 乙酸乙烯酯共聚物的乙酸乙烯酯重复单元的含量在20至35重量%的范围内 。
    • 9. 发明授权
    • Magnetic head
    • 磁头
    • US06822828B2
    • 2004-11-23
    • US09907225
    • 2001-07-17
    • Masahiko YamazakiYoshihiko Inoue
    • Masahiko YamazakiYoshihiko Inoue
    • G11B5127
    • G11B5/255G11B5/147G11B5/187G11B5/1878G11B5/232G11B5/40
    • The present invention discloses a magnetic head which allows smooth filling of a non-magnetic material such as glass, and can prevent bubbles from generating within the such non-magnetic material, which comprises a slide-contact plane with which a magnetic recording medium comes into contact, which is provided on a magnetic core; a magnetic gap provided in the slide-contact plane by forming thereon at least a magnetic film; a groove portion provided at one end or each of both ends of the magnetic gap so as to be aligned approximately in parallel to a moving direction of the magnetic recording medium; and a non-magnetic material provided in the groove portion, wherein the groove portion has a non-magnetic oxide film and a chromium film formed on an inner surface thereof and has the non-magnetic material formed on the chromium film so as to fill the groove portion.
    • 本发明公开了一种能够平滑地填充诸如玻璃等非磁性材料的磁头,并且可以防止在这种非磁性材料内产生气泡,这种非磁性材料包括磁记录介质进入的滑动接触平面 接触,其设置在磁芯上; 通过在至少一个磁性膜上形成在所述滑动接触平面中的磁隙; 设置在所述磁隙的两端的一端或每一端的槽部,以与所述磁记录介质的移动方向大致平行地排列; 以及设置在所述槽部中的非磁性材料,其中所述槽部具有形成在其内表面上的非磁性氧化膜和铬膜,并且在所述铬膜上形成所述非磁性材料以填充 槽部。
    • 10. 发明授权
    • Semiconductor memory having dynamic memory cells and a redundancy relief circuit
    • 具有动态存储单元的半导体存储器和冗余消除电路
    • US06762963B2
    • 2004-07-13
    • US10192615
    • 2002-07-11
    • Yoshihiko InoueHisashi MotomuraMasashi Horiguchi
    • Yoshihiko InoueHisashi MotomuraMasashi Horiguchi
    • G11C700
    • G11C11/406
    • A semiconductor memory capable of reducing refresh cycle time, which includes normal memory cells provided at predetermined intersections of plural normal word lines and plural bit lines, and redundant memory cells of redundant word lines and the plural bit lines, a redundancy relief circuit evaluates whether each of an internal address signal for a memory operation and a refresh address signal corresponds to the address of a defective word line of the plural normal word lines. An address selecting circuit switches the defective word line to a redundant word line according to the evaluation result. The redundancy relief circuit then evaluates whether a refresh address added to the refresh address signal corresponds to a defective address, and during refresh, the address selecting circuit selects a normal or redundant word line according to the evaluation result in a preceding cycle.
    • 一种能够减少刷新周期时间的半导体存储器,其包括在多个正常字线和多个位线的预定交点处提供的正常存储器单元以及冗余字线和多个位线的冗余存储器单元,冗余消除电路评估每个 用于存储器操作的内部地址信号和刷新地址信号对应于多个正常字线的缺陷字线的地址。 地址选择电路根据评估结果将缺陷字线切换成冗余字线。 然后,冗余解除电路评估添加到刷新地址信号的刷新地址是否对应于缺陷地址,并且在刷新期间,地址选择电路根据前一周期的评估结果选择正常或冗余字线。