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1. 发明授权

US08715415B2 Vitreous silica crucible for pulling silicon single crystal 有权
标题翻译：硅玻璃坩埚用于拉硅单晶
公开(公告)号：US08715415B2
公开(公告)日：2014-05-06
申请号：US12752374
申请日：2010-04-01
申请人： Makiko Kodama , Hiroshi Kishi , Minoru Kanda
发明人： Makiko Kodama , Hiroshi Kishi , Minoru Kanda
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C30B29/06 , C30B35/002
摘要： Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer(11) provided on an outer surface thereof and containing plural bubbles, and a transparent vitreous silica layer(12) provided on an inner surface and not containing bubbles substantially. The opaque vitreous silica layer(11) has a bubble diameter distribution in which the content of bubbles having a diameter of less than 40 μm is 10% or more and less than 30%, the content of bubbles having a diameter of 40 μm or more and less than 90 μm is 40% or more and less than 80%, and the content of bubbles having a diameter equal to or more than 90 μm is 10% or more and less than 30%. Relatively small bubbles contained in the opaque vitreous silica layer(11) contribute to the thermal conductivity of a crucible at an initial pulling stage, and relatively large bubbles contained in the opaque vitreous silica layer are expanded through a long-term pulling process to thereby largely contribute to the warmth retaining property of the crucible at a later pulling stage.
摘要翻译：本发明提供一种用于拉伸硅单晶的石英玻璃坩埚，其可以在短时间内熔化硅原料，并且通过不透明氧化硅玻璃层的时间变化提高硅单晶的产率。石英玻璃坩埚包括设置在其外表面并且包含多个气泡的不透明玻璃状石英层（11），以及设置在内表面上且基本上不含有气泡的透明玻璃状石英层（12）。不透明玻璃状石英层（11）具有气泡直径分布，其中直径小于40μm的气泡的含量为10％以上且小于30％，气泡的直径为40μm以上小于90μm的是40％以上且小于80％，直径等于或大于90μm的气泡的含量为10％以上且小于30％。包含在不透明玻璃状二氧化硅层（11）中的相对小的气泡有助于在初始拉伸阶段的坩埚的导热性，并且通过长期拉伸工艺使包含在不透明玻璃状二氧化硅层中的相对大的气泡膨胀，从而大大地扩大有助于在稍后的拉动阶段坩埚的保温性能。

2. 发明授权

US08936685B2 Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same 有权
标题翻译：用于拉硅单晶的玻璃状硅石坩埚及其制造方法
公开(公告)号：US08936685B2
公开(公告)日：2015-01-20
申请号：US13394284
申请日：2010-08-20
申请人： Toshiaki Sudo , Makiko Kodama , Minoru Kanda , Hiroshi Kishi
发明人： Toshiaki Sudo , Makiko Kodama , Minoru Kanda , Hiroshi Kishi
IPC分类号： C30B15/10 , C03B19/09 , C30B29/06 , C30B35/00 , C30B29/18
CPC分类号： C03B19/095 , C30B15/10 , C30B29/06 , C30B29/18 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.
摘要翻译：本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比第二不透明玻璃状石英部分11b。

3. 发明申请

US20120160159A1 VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：用于拉丝硅单晶的耐火二氧化硅巧克力及其制造方法
公开(公告)号：US20120160159A1
公开(公告)日：2012-06-28
申请号：US13394284
申请日：2010-08-10
申请人： Toshiaki Sudo , Makiko Kodama , Minoru Kanda , Hiroshi Kishi
发明人： Toshiaki Sudo , Makiko Kodama , Minoru Kanda , Hiroshi Kishi
IPC分类号： C30B15/10 , C03B20/00
CPC分类号： C03B19/095 , C30B15/10 , C30B29/06 , C30B29/18 , C30B35/002 , Y02P40/57 , Y10T117/1032
摘要： The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.
摘要翻译：本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚，以及制造这种石英玻璃坩埚的方法。玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1，第一不透明玻璃状石英部11a的比重为1.4〜1.8，小于第二不透明玻璃状二氧化硅部的比重。用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽，并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比第二不透明玻璃状石英部分11b。

4. 发明申请

US20120260852A1 VITREOUS SILICA CRUCIBLE 有权
标题翻译：紫外线可溶性
公开(公告)号：US20120260852A1
公开(公告)日：2012-10-18
申请号：US13148457
申请日：2010-12-13
申请人： Toshiaki Sudo , Hiroshi Kishi , Makiko Kodama
发明人： Toshiaki Sudo , Hiroshi Kishi , Makiko Kodama
IPC分类号： C30B15/10
CPC分类号： C30B35/002 , C03C19/00 , C03C23/0025 , C30B15/10 , Y10T117/1032
摘要： Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.
摘要翻译：本发明提供一种玻璃状石英玻璃坩埚，其特征在于，在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域，同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上，并且标记至少设置在特殊区域的上端和下端。

5. 发明授权

US09115445B2 Vitreous silica crucible 有权
标题翻译：石英玻璃坩埚
公开(公告)号：US09115445B2
公开(公告)日：2015-08-25
申请号：US13148457
申请日：2010-12-13
申请人： Toshiaki Sudo , Hiroshi Kishi , Makiko Kodama
发明人： Toshiaki Sudo , Hiroshi Kishi , Makiko Kodama
IPC分类号： C30B35/00 , C03C19/00 , C03C23/00 , C30B15/10
CPC分类号： C30B35/002 , C03C19/00 , C03C23/0025 , C30B15/10 , Y10T117/1032
摘要： Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.
摘要翻译：本发明提供一种玻璃状石英玻璃坩埚，其特征在于，在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域，同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上，并且标记至少设置在特殊区域的上端和下端。

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