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    • 2. 发明授权
    • Injection molding apparatus for predicting deformation amount in
injection-molded article
    • 用于预测注射成型制品中的变形量的注射成型装置
    • US5811133A
    • 1998-09-22
    • US749833
    • 1996-11-15
    • Maki SaitoHisakazu MorinagaHiroaki Yamagata
    • Maki SaitoHisakazu MorinagaHiroaki Yamagata
    • B29C37/00B29C45/76B29C45/77
    • B29C45/7693B29C45/768B29C37/005
    • A simulation system predicts a behavior of a molten resin in a mold in filling, packing, and cooling processes by using a fundamental equation formulated by the finite element method, and shrinkage factors in a direction of thickness and planar directions based on anisotropy of a volume shrinkage factor obtained during prediction of the filling, packing, and cooling processes, so that a warp deformation in an injection-molded article can be predicted at a higher precision. In this simulation system, the warp deformation is predicted by calculating the shrinkage factors in accordance with: .epsilon.Z=A+B.multidot.eV (1) .epsilon.P=(eV-.epsilon.Z)/2 (2) wherein .epsilon.Z is a shrinkage factor in the direction of thickness, .epsilon.P is a shrinkage factor in the planar directions, eV is a volume shrinkage factor, and A and B are shrinkage coefficients.
    • 模拟系统通过使用由有限元方法组成的基本方程和基于体积各向异性的厚度方向和平面方向上的收缩因子来预测模具中的熔融树脂在填充,包装和冷却过程中的行为 在填充,包装和冷却过程的预测期间获得的收缩系数,从而可以以更高的精度预测注塑制品中的翘曲变形。 在该模拟系统中,通过根据以下公式计算收缩因子来预测翘曲变形:εZ = A + BxeV(1)εP =(eV-εZ)/ 2(2)其中εZ是收缩因子 厚度方向,εP是平面方向的收缩因子,eV是体积收缩率,A和B是收缩系数。
    • 8. 发明授权
    • Solid-state imaging device and method for producing the same
    • 固态成像装置及其制造方法
    • US07795654B2
    • 2010-09-14
    • US11499766
    • 2006-08-07
    • Maki Saito
    • Maki Saito
    • H01L31/062H01L31/113
    • H01L27/14831H01L27/14683H01L29/76866
    • In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first conductive film and a second layer electrode comprising a second conductive film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film having a two-layer structure comprising a sidewall insulating film consisting of a first insulating layer formed by a CVD method to cover the lateral wall of the first layer electrode and a second insulating film.
    • 在具有光电转换部分和配备有用于转移在光电转换部分中产生的电荷的电荷转移电极的电荷转移部分的本发明的固态成像装置中,电荷转移电极具有第一 层状电极,其包括第一导电膜和包括第二导电膜的第二层电极,并且第一层电极和第二层电极通过绝缘体与具有两层结构的电极间绝缘膜分离,该两电极绝缘膜包括由 通过CVD法覆盖第一层电极的侧壁和第二绝缘膜形成的第一绝缘层。
    • 9. 发明授权
    • Method of producing a solid state imaging device including using a metal oxide etching stopper
    • 包括使用金属氧化物蚀刻阻挡件的固态成像装置的制造方法
    • US07772017B2
    • 2010-08-10
    • US12179433
    • 2008-07-24
    • Maki Saito
    • Maki Saito
    • H01L21/66H01L21/98H01L21/8238H01L21/302
    • H01L31/1122H01L27/14609H01L27/14612H01L27/14627H01L27/14689
    • In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.
    • 在具有光电转换部分和配备有用于转移在光电转换部分中产生的电荷的电荷转移电极的电荷转移部分的本发明的固态成像装置中,电荷转移电极具有第一 其包括第一层导电膜和包括第二层导电膜的第二层电极,所述第二层电极形成在包括由氧化硅膜和金属氧化物薄膜构成的层压膜的栅极氧化物膜上,并且所述第一层导电膜 层间电极和第二层电极通过绝缘体分离,该电极间绝缘膜包括通过CVD工艺形成的侧壁绝缘膜以覆盖第一层电极的侧壁。