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1. 发明授权

US06770419B2 Low silicon-outgassing resist for bilayer lithography 失效
公开(公告)号：US06770419B2
公开(公告)日：2004-08-03
申请号：US10241937
申请日：2002-09-11
申请人： Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
发明人： Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
IPC分类号： G03C173
CPC分类号： G03F7/094 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

2. 发明授权

US06818381B2 Underlayer compositions for multilayer lithographic processes 失效
标题翻译：用于多层光刻工艺的底层组合物
公开(公告)号：US06818381B2
公开(公告)日：2004-11-16
申请号：US10026184
申请日：2001-12-21
申请人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： G03F711
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
摘要翻译：适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。该组合物提供优异的光学，机械和蚀刻选择性。组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

3. 发明授权

US06927015B2 Underlayer compositions for multilayer lithographic processes 失效
标题翻译：用于多层光刻工艺的底层组合物
公开(公告)号：US06927015B2
公开(公告)日：2005-08-09
申请号：US10920762
申请日：2004-08-18
申请人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： C08F30/08 , C08F32/00 , C08F230/08 , C08K5/41 , C08K5/54 , C08L43/04 , C08L45/00 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075 , G03F7/09 , G11B5/31 , H01L21/027 , G03F7/40 , G03F7/11
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
摘要翻译：适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。该组合物提供优异的光学，机械和蚀刻选择性。组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

4. 发明授权

US06420503B1 Norbornene sulfonamide polymers 有权
标题翻译：降冰片烯磺酰胺聚合物
公开(公告)号：US06420503B1
公开(公告)日：2002-07-16
申请号：US09497846
申请日：2000-02-03
申请人： Saikumar Jayaraman , Richard Vicari , Larry F. Rhodes , Pushkara Rao Varanasi , Thomas I. Wallow , Ratnam Sooriyakumaran , Robert D. Allen , Richard A. DiPietro , Hiroshi Ito , Juliann Opitz
发明人： Saikumar Jayaraman , Richard Vicari , Larry F. Rhodes , Pushkara Rao Varanasi , Thomas I. Wallow , Ratnam Sooriyakumaran , Robert D. Allen , Richard A. DiPietro , Hiroshi Ito , Juliann Opitz
IPC分类号： C08F2806
CPC分类号： C08F32/08 , C08G61/08
摘要： The invention is directed to polymers containing a repeating unit derived from a norbornene sulfonamide. These may be addition polymers which include copolymers with one or more comonomers such as norbornene, ethylene, an acrylate or sulfur dioxide or carbon monoxide. Said monomers may be polymerized using single or multicomponent Group VIII catalysts. The norbornene sulfonamides can also form ROMP polymers using known metathesis catalysts. Preferably the ROMP polymers may be hydrogenated to give more stable polymers.
摘要翻译：本发明涉及含有衍生自降冰片烯磺酰胺的重复单元的聚合物。这些可以是加成聚合物，其包括与一种或多种共聚单体如降冰片烯，乙烯，丙烯酸酯或二氧化硫或一氧化碳的共聚物。所述单体可以使用单组分或多组分VIII族催化剂进行聚合。降冰片烯磺酰胺也可以使用已知的复分解催化剂形成ROMP聚合物。优选地，ROMP聚合物可以被氢化以得到更稳定的聚合物。

5. 发明授权

US06939664B2 Low-activation energy silicon-containing resist system 失效
标题翻译：低活化能含硅抗蚀剂体系
公开(公告)号：US06939664B2
公开(公告)日：2005-09-06
申请号：US10693199
申请日：2003-10-24
申请人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
IPC分类号： G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075 , G03E7/004
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分，用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

6. 发明授权

US08802347B2 Silicon containing coating compositions and methods of use 有权
标题翻译：含硅涂料组合物和使用方法
公开(公告)号：US08802347B2
公开(公告)日：2014-08-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
IPC分类号： G03F7/039 , G03F7/11 , G03F7/20 , G03F7/30 , G03F7/38
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

7. 发明申请

US20110111345A1 SILICON CONTAINING COATING COMPOSITIONS AND METHODS OF USE 有权
标题翻译：含硅的涂料组合物和使用方法
公开(公告)号：US20110111345A1
公开(公告)日：2011-05-12
申请号：US12613804
申请日：2009-11-06
申请人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
发明人： Robert D. Allen , Phillip J. Brock , Kuang-Jung Chen , Alexander Friz , Wu-Song Huang , Ratnam Sooriyakumaran , Sally A. Swanson , Hoa D. Truong
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including: wherein R1 is a silicon containing moiety, R2 is an acid stable lactone functionality, and R3 is an acid labile lactone functionality; X1, X2, X3 are independently H or CH3; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括聚合物，其包括：其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是零或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

8. 发明授权

US08470516B2 Method of forming a relief pattern by e-beam lithography using chemical amplification, and derived articles 失效
标题翻译：通过使用化学扩增的电子束光刻形成浮雕图案的方法和衍生制品
公开(公告)号：US08470516B2
公开(公告)日：2013-06-25
申请号：US12542821
申请日：2009-08-18
申请人： Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Luisa Bozano , Phillip Brock , Qinghuang Lin , Alshakim Nelson , Ratnam Sooriyakumaran
IPC分类号： G03F7/00 , G03F7/26
CPC分类号： G03F7/038 , G03F7/0757 , G03F7/2059 , G03F7/40
摘要： A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.
摘要翻译：产生浮雕图案的方法包括将抗蚀剂组合物设置在基底上以形成膜，抗蚀剂组合物包含式（1）的第一倍半硅氧烷聚合物：式（2）的第二倍半硅氧烷聚合物：和光敏酸发电机; 通过电子束光刻对图案进行图案曝光; 加热暴露的膜以在暴露的区域中实现第一聚合物和第二聚合物的交联; 并将曝光的胶片显影形成负浮雕图案。

9. 发明申请

US20080286467A1 METHOD OF USE FOR PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS 有权
标题翻译：用于BEOL应用的光电介质材料的使用方法
公开(公告)号：US20080286467A1
公开(公告)日：2008-11-20
申请号：US11750356
申请日：2007-05-18
申请人： Robert D. Allen , Phillip Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
IPC分类号： B05D1/32 , C04B41/50
CPC分类号： H01L21/3122 , G03F7/0382 , G03F7/0757 , G03F7/40 , H01L21/02137 , H01L21/02282 , H01L21/02348 , H01L21/76802 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76828 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.
摘要翻译：一个方法。该方法包括在硅晶片衬底上浸涂组合物的膜。该组合物包括第一聚合物和第二聚合物的聚合物共混物。第一聚合物是取代的倍半硅氧烷共聚物。第二聚合物是具有硅烷醇端基的聚倍半硅氧烷。该组合物包括光敏酸产生剂，有机碱和有机交联剂。膜被图案化成像，并且至少一个区域暴露于波长为约248纳米的辐射。该膜被烘烤，导致膜中引起交联。显影该膜，导致去除基底溶解的膜的未曝光区域，其中残留有膜的浮雕图案。浮雕图案在约300℃和约450℃之间的温度下固化，并且固化利用与UV辐射的热处理的组合。

10. 发明授权

US07867689B2 Method of use for photopatternable dielectric materials for BEOL applications 有权
标题翻译：用于BEOL应用的光图案介电材料的使用方法
公开(公告)号：US07867689B2
公开(公告)日：2011-01-11
申请号：US11750356
申请日：2007-05-18
申请人： Robert D. Allen , Phillip Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
发明人： Robert D. Allen , Phillip Brock , Blake W. Davis , Qinghuang Lin , Robert D. Miller , Alshakim Nelson , Ratnam Sooriyakumaran
IPC分类号： G03F7/038 , G03F7/075 , G03F7/20 , G03F7/30 , G03F7/40
CPC分类号： H01L21/3122 , G03F7/0382 , G03F7/0757 , G03F7/40 , H01L21/02137 , H01L21/02282 , H01L21/02348 , H01L21/76802 , H01L21/76814 , H01L21/76825 , H01L21/76826 , H01L21/76828 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation.
摘要翻译：一个方法。该方法包括在硅晶片衬底上浸涂组合物的膜。该组合物包括第一聚合物和第二聚合物的聚合物共混物。第一聚合物是取代的倍半硅氧烷共聚物。第二聚合物是具有硅烷醇端基的聚倍半硅氧烷。该组合物包括光敏酸产生剂，有机碱和有机交联剂。膜被图案化成像，并且至少一个区域暴露于波长为约248纳米的辐射。该膜被烘烤，导致膜中引起交联。显影该膜，导致去除基底溶解的膜的未曝光区域，其中残留有膜的浮雕图案。浮雕图案在约300℃和约450℃之间的温度下固化，并且固化利用与UV辐射的热处理的组合。

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