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1. 发明申请

US20130328117A1 FLOATING GATE NON-VOLATILE MEMORY BIT CELL 有权
标题翻译：浮动门非易失性存储位单元
公开(公告)号：US20130328117A1
公开(公告)日：2013-12-12
申请号：US13492811
申请日：2012-06-09
申请人： Mads HOMMELGAARD , Andrew HORCH , Martin NISET
发明人： Mads HOMMELGAARD , Andrew HORCH , Martin NISET
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L29/0847 , G11C16/0441 , H01L27/11524 , H01L27/1156 , H01L29/7881
摘要： A solid-state non-volatile memory (NVM) device includes a memory bit cell. The memory bit cell includes a field effect transistor (FET) fabricated on a substrate and having a floating gate. The floating gate includes a thick oxide layer. The FET includes drain and source, each fabricated within the substrate and coupled to the floating gate and a channel region with native doping. The drain is fabricated to have a halo region. A method for fabricating a solid-state NVM device includes fabricating solid state device including NVM bit cell which provides multiple storage and includes an FET on substrate. The method also includes fabricating floating gate of the FET including thick gate oxide layer, and fabricating drain and source of FET within the substrate, drain and source coupled to the floating gate and channel region with native doping. Further, the method includes fabricating halo region within the substrate at the drain.
摘要翻译：固态非易失性存储器（NVM）器件包括存储器位单元。存储位单元包括制造在衬底上并具有浮置栅极的场效应晶体管（FET）。浮栅包括厚的氧化物层。 FET包括漏极和源极，每个都在衬底内制造并耦合到浮置栅极和具有天然掺杂的沟道区域。漏极被制造成具有卤素区域。制造固态NVM器件的方法包括制造包括提供多个存储并且在衬底上的FET的NVM位单元的固态器件。该方法还包括制造包括厚栅极氧化物层的FET的浮置栅极，并且在衬底内制造FET的漏极和源极，漏极和源极与天然掺杂耦合到浮置栅极和沟道区域。此外，该方法包括在漏极处制造衬底内的卤素区域。

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