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1. 发明申请

WO2011119952A2 INTEGRATED SYSTEM FOR VAPOR GENERATION AND THIN FILM DEPOSITION 审中-公开
标题翻译：用于蒸汽发生和薄膜沉积的集成系统
公开(公告)号：WO2011119952A2
公开(公告)日：2011-09-29
申请号：PCT/US2011/029987
申请日：2011-03-25
申请人： MSP CORPORATION , LIU, Benjamin, Y.H. , MA, Yamin , DINH, Thuc
发明人： LIU, Benjamin, Y.H. , MA, Yamin , DINH, Thuc
IPC分类号： H01L21/205
CPC分类号： F01K17/04 , Y10T137/0318 , Y10T137/0379 , Y10T137/7761 , Y10T137/8593
摘要： An apparatus and method for generating vapor from a liquid precursor for a thin film deposition on a substrate includes an inlet 130 section in fluid communication with a downstream vaporization chamber 120 section. The inlet 130 section comprises a gas inlet for receiving gas from a gas source 180 through a gas flow sensor 202 and a gas flow control valve 230 and a liquid inlet 150 for receiving liquid from a liquid source 220 through a liquid flow sensor 210 and a liquid flow control valve 230. An electronic controller 600 controls the gas and liquid flow control valves 230 thereby controlling the rates of gas and liquid flow into the inlet 130 section to generate vapor in the downstream vaporization chamber 120 section for thin film deposition on the substrate.
摘要翻译：用于从液体前体产生蒸气的设备和方法用于薄膜沉积在基底上，包括与下游蒸发室120部分流体连通的入口130部分。入口130部分包括气体入口，用于通过气体流量传感器202和气体流量控制阀230从气体源180接收气体，以及用于通过液体流量传感器210从液体源220接收液体的液体入口150和液体流量控制阀230.电子控制器600控制气体和液体流量控制阀230，从而控制进入入口130部分的气体和液体流量的速率，以在下游蒸发室120部分中产生蒸汽，用于在基板上进行薄膜沉积。

2. 发明申请

WO2006098792A2 HIGH ACCURACY VAPOR GENERATION AND DELIVERY FOR THIN FILM DEPOSITION 审中-公开
标题翻译：高精度蒸汽发生和输送薄膜沉积
公开(公告)号：WO2006098792A2
公开(公告)日：2006-09-21
申请号：PCT/US2005/047613
申请日：2005-12-30
申请人： MSP CORPORATION , LIU, Benjamin, Y.H. , MA, Yamin
发明人： LIU, Benjamin, Y.H. , MA, Yamin
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： C23C16/4486 , C23C16/4481 , C23C16/45502 , C23C16/45512 , C23C16/45525 , C23C16/45582 , C23C16/45585 , C23C16/45587 , C23C16/52
摘要： The present invention involves injecting a liquid and gas into a vapor holding chamber held at a sufficiently high temperature to insure all the liquid injected is vaporized and held in the chamber 30 as a vapor. The gas/vapor mixture is then delivered to the deposition chamber 70 in which the deposition substrate is held.
摘要翻译：本发明涉及将液体和气体注入到保持在足够高的温度下的蒸汽保持室中，以确保喷射的所有液体被蒸发并作为蒸汽保持在腔室30中。然后将气体/蒸气混合物输送到其中保持沉积基板的沉积室70。

3. 发明申请

WO2011097238A2 FINE DROPLET ATOMIZER FOR LIQUID PRECURSOR VAPORIZATION 审中-公开
标题翻译：用于液体前驱体蒸发的精细滴剂原液
公开(公告)号：WO2011097238A2
公开(公告)日：2011-08-11
申请号：PCT/US2011/023362
申请日：2011-02-01
申请人： MSP CORPORATION , LIU, Benjamin, Y., H. , DINH, Thuc, M. , MA, Yamin
发明人： LIU, Benjamin, Y., H. , DINH, Thuc, M. , MA, Yamin
IPC分类号： H01L21/205
CPC分类号： B05B17/04 , C23C16/4486
摘要： The present disclosure relates to an apparatus 10 and a method for forming a droplet aerosol for vaporization and subsequent thin film deposition on a substrate. The apparatus 10 includes a mechanism to control the rate of liquid flow through the apparatus 10, the mechanism including a piezoelectric actuator 240 to adjust the rate of liquid flow and an atomizing mechanism drawing gas from a compressed gas source 70 such that when the gas source conjoins with the liquid, the liquid is atomized to form droplets suspended in the gas thereby forming a droplet aerosol suitable for subsequent thin film deposition on a substrate. The method includes drawing a gas from a compressed gas source and drawing a liquid from a liquid source. The liquid and gas are conjoined in either a coaxial flow relationship or a radial flow relationship or an angular relationship between radial and coaxial flow wherein the gas engages the liquid to form droplets suitable for vaporization and subsequent thin film deposition on a substrate.
摘要翻译：本公开涉及一种用于形成用于汽化和随后在基板上的薄膜沉积的液滴气溶胶的装置10和方法。装置10包括一个控制流过装置10的液体流速的机构，该机构包括一个调节液体流速的压电致动器240和一个从压缩气体源70抽出气体的雾化机构，与液体结合，液体被雾化以形成悬浮在气体中的液滴，从而形成适用于随后的薄膜沉积在基底上的液滴气溶胶。该方法包括从压缩气体源抽取气体并从液体源抽取液体。液体和气体以同轴流动关系或径向流动关系或径向和同轴流动之间的角度关系相结合，其中气体与液体接合以形成适于汽化的液滴和随后在基底上的薄膜沉积。

4. 发明申请

WO2005068682A2 HIGH-PERFORMANCE VAPORIZER FOR LIQUID-PRECURSOR AND MULTI-LIQUID-PRECURSOR VAPORIZATION IN SEMICONDUCTOR THIN FILM DEPOSITION 审中-公开
标题翻译：用于液体前驱物的高性能蒸发器和半导体薄膜沉积中的多液体前驱体蒸发
公开(公告)号：WO2005068682A2
公开(公告)日：2005-07-28
申请号：PCT/US2004/041944
申请日：2004-12-15
申请人： MSP CORPORATION , LIU, Benjamin, Y., H. , MA, Yamin
发明人： LIU, Benjamin, Y., H. , MA, Yamin
IPC分类号： C23C16/448
CPC分类号： C23C16/4486 , B01B1/005
摘要： A vaporization system (50, 92, 92a, 92b, 180) for thin film formation and for introducing vapors into a deposition chamber (26, 84, 130) for depositing films onto a semi-conductor surface has a vaporization chamber (52, 116, 192) that is selectively provided with at least two different, that is selectively provided with at least two different, separate, precursor liquids (54A, 54B, 54C, 110A, 110B, 186) carried in a gas stream that may be a single carrier gas, or a selected one of a plurality of carrier gases from gas sources (12, 62A, 62B, 62C, 98A, 98B, 184). When the liquids being introduced are likely to be subject to thermal decomposition from contact with high temperature surfaces, an atomizer (94, 142A, 142B, 154A, 154B, 182) is used at the inlet of the vaporization chamber (52, 116, 192) to provide an aerosol to the vaporization chamber (52, 116, 192) from one or more individual carrier gases from gas sources 12, 62A, 62B, 62C, 98A, 98B for simultaneous or sequential introduction into the vaporization chamber (52, 116, 192). The vaporization chamber (52, 116, 192) may be designed to insure complete vaporization by incorporating a recirculating gas flow through heated passageways (198, 124, 202, 212) before the vaporized gas/vapor mixture exits the vaporization chamber (52, 116, 192).
摘要翻译：用于薄膜形成和用于将蒸气引入用于将膜沉积到半导体表面上的沉积室（26,84,130）中的蒸发系统（50,92,92a，92b，180）具有蒸发室（52,116 ，192），其被选择性地设置有至少两个不同的，其被选择性地设置有携带在气流中的至少两种不同的分离的前体液体（54A，54B，54C，110A，110B，186）载气或来自气体源（12,62A，62B，62C，98A，98B，184）的多种载气中的选定的一种。当引入的液体可能经受与高温表面接触的热分解时，在蒸发室（52,116,192）的入口处使用雾化器（94,142A，142B，154A，154B，182））以从气源12,62A，62B，62C，98A，98B的一种或多种单独的载气提供气雾剂以同时或顺序地引入蒸发室（52,116），192）。蒸发室（52,116,192）可以被设计成通过在汽化的气体/蒸气混合物离开蒸发室（52,116）之前并入循环气流通过加热通道（198,124,202,212）来确保完全蒸发，192）。

5. 发明申请

WO2019083987A1 APPARATUS AND METHOD FOR VAPOR GENERATION AND FILM DEPOSITION 审中-公开
公开(公告)号：WO2019083987A1
公开(公告)日：2019-05-02
申请号：PCT/US2018/057083
申请日：2018-10-23
申请人： MSP CORPORATION
发明人： DINH, Thuc, M. , MA, Yamin , LIU, Benjamin, Y.H.
IPC分类号： B01D1/06 , B01D1/26
CPC分类号： B01D1/0017 , B01D1/06 , B01D1/14 , B01D1/16 , B01D1/26
摘要： An apparatus and method for generating a vapor with a compact vaporizer design and exposing the gas and liquid mixture for vaporization to a reduced maximum temperature. A gas and liquid droplet flow through a metal housing (110) configured to heat the gas and liquid droplet mixture flow for vaporization includes directing the gas and liquid droplet mixture through an inlet (120) of the metal housing and flowing the gas through a tortious flow path defined by a plurality of tubular flow passageways (180) arranged around a central axis for vaporization. The flow path is directed through a heat exchanger (410) including one more changes in direction of flow path before flowing into the further tortious flow path described above. Residual liquid droplets may be further vaporized by flowing through a second metal housing configured to heat the gas and liquid droplet mixture for vaporization and having a similar construction to the first metal housing and providing a second tortious flow path.

6. 发明公开

EP1844178A2 HIGH ACCURACY VAPOR GENERATION AND DELIVERY FOR THIN FILM DEPOSITION 有权
标题翻译：高精度蒸汽的生产和供应薄膜沉积
公开(公告)号：EP1844178A2
公开(公告)日：2007-10-17
申请号：EP05857616.6
申请日：2005-12-30
申请人： MSP CORPORATION
发明人： LIU, Benjamin, Y.H. , MA, Yamin
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： C23C16/4486 , C23C16/4481 , C23C16/45502 , C23C16/45512 , C23C16/45525 , C23C16/45582 , C23C16/45585 , C23C16/45587 , C23C16/52
摘要： The present invention involves injecting a liquid and gas into a vapor holding chamber (30) held at a sufficiently high temperature to insure all the liquid injected is vaporize and held in the chamber (30) as a vapor. The gas/vapor mixture is then delivered to the deposition chamber (70) in which the deposition substrate (72) is held.

7. 发明公开

EP1704267A2 HIGH-PERFORMANCE VAPORIZER FOR LIQUID-PRECURSOR AND MULTI-LIQUID-PRECURSOR VAPORIZATION IN SEMICONDUCTOR THIN FILM DEPOSITION 审中-公开
标题翻译：高性能蒸发器液体预膨胀和多个充液前体半导体薄膜沉积
公开(公告)号：EP1704267A2
公开(公告)日：2006-09-27
申请号：EP04814162.6
申请日：2004-12-15
申请人： MSP CORPORATION
发明人： LIU, Benjamin, Y., H. , MA, Yamin
IPC分类号： C23C16/448
CPC分类号： C23C16/4486 , B01B1/005
摘要： A vaporization system (50, 92, 92a, 92b, 180) for thin film formation and for introducing vapors into a deposition chamber (26, 84, 130) for depositing films onto a semi-conductor surface has a vaporization chamber (52, 116, 192) that is selectively provided with at least two different, that is selectively provided with at least two different, separate, precursor liquids (54A, 54B, 54C, 110A, 110B, 186) carried in a gas stream that may be a single carrier gas, or a selected one of a plurality of carrier gases from gas sources (12, 62A, 62B, 62C, 98A, 98B, 184). When the liquids being introduced are likely to be subject to thermal decomposition from contact with high temperature surfaces, an atomizer (94, 142A, 142B, 154A, 154B, 182) is used at the inlet of the vaporization chamber (52, 116, 192) to provide an aerosol to the vaporization chamber (52, 116, 192) from one or more individual carrier gases from gas sources 12, 62A, 62B, 62C, 98A, 98B for simultaneous or sequential introduction into the vaporization chamber (52, 116, 192). The vaporization chamber (52, 116, 192) may be designed to insure complete vaporization by incorporating a recirculating gas flow through heated passageways (198, 124, 202, 212) before the vaporized gas/vapor mixture exits the vaporization chamber (52, 116, 192).

8. 发明公开

EP3684485A1 APPARATUS AND METHOD FOR VAPOR GENERATION AND FILM DEPOSITION 无效
公开(公告)号：EP3684485A1
公开(公告)日：2020-07-29
申请号：EP18869624.9
申请日：2018-10-23
申请人： MSP CORPORATION
发明人： DINH, Thuc, M. , MA, Yamin , LIU, Benjamin, Y.H.
IPC分类号： B01D1/06 , B01D1/26

9. 发明授权

EP1844178B1 HIGH ACCURACY VAPOR GENERATION AND DELIVERY FOR THIN FILM DEPOSITION 有权
标题翻译：高精度蒸汽的生产和供应薄膜沉积
公开(公告)号：EP1844178B1
公开(公告)日：2016-03-09
申请号：EP05857616.6
申请日：2005-12-30
申请人： MSP CORPORATION
发明人： LIU, Benjamin, Y.H. , MA, Yamin
IPC分类号： C23C16/00 , C23C16/448 , C23C16/455 , C23C16/52
CPC分类号： C23C16/4486 , C23C16/4481 , C23C16/45502 , C23C16/45512 , C23C16/45525 , C23C16/45582 , C23C16/45585 , C23C16/45587 , C23C16/52

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