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    • 4. 发明申请
    • PROCESS CONTROL USING PROCESS DATA AND YIELD DATA
    • 使用过程数据和输入数据的过程控制
    • WO2009114251A1
    • 2009-09-17
    • PCT/US2009/034619
    • 2009-02-20
    • MKS INSTRUMENTS, INC.HENDLER, LawrenceLIN, Kuo-chinWOLD, Svante, Bjarne
    • HENDLER, LawrenceLIN, Kuo-chinWOLD, Svante, Bjarne
    • G05B23/02
    • G05B23/0254G05B17/02G05B2219/11G05B2219/1112G05B2219/32187G05B2219/32201G05B2219/45031Y02P90/22Y02P90/86
    • A method for monitoring a manufacturing process features acquiring metrology data for semiconductor wafers at the conclusion of a final process step for the manufacturing process ('Step a'). Data is acquired for a plurality of process variables for a first process step for manufacturing semiconductor wafers ('Step b'). A first mathematical model of the first process step is created based on the metrology data and the acquired data for the plurality of process variables for the first process step ('Step c'). Steps b and c are repeated for at least a second process step for manufacturing the semiconductor wafers ('Step d'). An nth mathematical model is created based on the metrology data and the data for the plurality of process variables for each of the n process steps ('Step e'). A top level mathematical model is created based on the metrology data and the models created by steps c, d and e ('Step f ')• The top level mathematical model of Step f is based on those process variables that have a substantial effect on the metrology data.
    • 在制造过程的最终处理步骤结束时,用于监测制造过程的方法特征在于采集半导体晶片的度量数据(“步骤a”)。 针对用于制造半导体晶片的第一工艺步骤的多个工艺变量获取数据(“步骤b”)。 基于测量数据和用于第一处理步骤(“步骤c”)的多个处理变量的获取数据,创建第一处理步骤的第一数学模型。 对于制造半导体晶片的至少第二工艺步骤重复步骤b和c(步骤d')。 基于计量学数据和用于n个处理步骤('步骤e')中的每一个的多个处理变量的数据创建第n个数学模型。 基于测量数据和由步骤c,d和e创建的模型创建顶级数学模型(“步骤f”)步骤f的顶级数学模型基于对 计量数据。