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1. 发明专利

IN6962DEN2014A SOLDER JOINT STRUCTURE POWER MODULE HEAT SINK ATTACHED SUBSTRATE FOR POWER MODULE METHOD FOR PRODUCING SAID SUBSTRATE AND PASTE FOR FORMING SOLDER UNDERLAYER 未知
公开(公告)号：IN6962DEN2014A
公开(公告)日：2015-04-10
申请号：IN6962DEN2014
申请日：2014-08-19
申请人： MITSUBISHI MATERIALS CORP
发明人： NISHIMOTO SHUJI , NISHIKAWA KIMIHITO , NAGATOMO YOSHIYUKI
IPC分类号： H01L23/40 , B23K1/00 , B23K1/19
摘要： A solder joint structure a power module utilizing the joint structure a heat sink attached substrate for a power module a method for producing the substrate and a paste for forming a solder underlayer. The paste is arranged on a metallic member and then fired thereby reacting with an oxide coating film generated on the surface of the metallic member to form a solder underlayer on the metallic member. In this manner it becomes possible to prevent the formation of swells or wrinkles on the surface of an aluminum member and it also becomes possible to improve the reliability of the joint between the aluminum member and a member to be joined to the aluminum member even under applying a power cycle or a heat cycle.

2. 发明专利

IN2878DEN2015A SEMICONDUCTOR DEVICE , CERAMIC CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 未知
公开(公告)号：IN2878DEN2015A
公开(公告)日：2015-09-11
申请号：IN2878DEN2015
申请日：2015-04-07
申请人： MITSUBISHI MATERIALS CORP
发明人： NISHIMOTO SHUJI , NAGATOMO YOSHIYUKI , NAGASE TOSHIYUKI
IPC分类号： H01L23/36 , H01L21/52 , H01L25/07
摘要： A semiconductor device (1) of the present invention is provided with a circuit layer (12) formed of a conductive material, and a semiconductor element (3) mounted on the circuit layer (12). On one surface of the circuit layer (12), a base layer (31) having a porosity within a range of 5 -55 % is formed , and on the base layer (31) , a bonding layer (38) is formed , said bonding layer being formed of a fired body of a bonding material containing metal particles and/or metal oxide particles, and an organic material. The circuit layer (12) and the semiconductor element (3) are bonded to each other with the base layer (31) and the bonding layer (38) therebetween.

3. 发明公开

EP3089209A4 SUBSTRATE FOR POWER MODULE, METHOD FOR MANUFACTURING SAME, AND POWER MODULE 有权转让
标题翻译： SUBSTRATFÜRLEISTUNGSMODUL，VERFAHREN ZUR HERSTELLUNG DAVON UND LEISTUNGSMODUL
公开(公告)号：EP3089209A4
公开(公告)日：2017-08-23
申请号：EP14875835
申请日：2014-12-22
申请人： MITSUBISHI MATERIALS CORP
发明人： NISHIMOTO SHUJI , NAGATOMO YOSHIYUKI
IPC分类号： H01L23/12 , H01L21/52 , H01L23/00 , H01L23/36 , H01L23/373 , H01L23/40
CPC分类号： H01L24/29 , H01L23/3735 , H01L23/473 , H01L24/32 , H01L24/83 , H01L2224/29111 , H01L2224/29139 , H01L2224/32225 , H01L2224/83439 , H01L2224/8384 , H01L2924/13055 , H01L2924/00 , H01L2924/00014 , H01L2924/01047 , H01L2924/014 , H01L2924/01029 , H01L2924/01049
摘要： An elongated trench (35) is formed so as to connect the Ag layer (32) and the exposed part of the circuit layer stretching out around the Ag layer (32). The trench (35) a narrow and elongated recessed part penetrating the glass layer (31) and the aluminum oxide film (12A) from the Ag layer (32) to reach the surface (12a) of the circuit layer (2). The extended part (36), which is a part of the Ag layer (32) flatted along with the inner surface (35a) of the trench (35), is formed in the trench (35). The Ag layer (32) and the circuit layer (12) are electrically connected directly by Ag with a low electric resistance value by the extended part (36) in the portion where the trench (35) is formed.
摘要翻译：细长的沟槽（35）形成为连接Ag层（32）和围绕Ag层（32）延伸的电路层的暴露部分。沟槽（35）是从Ag层（32）穿过玻璃层（31）和氧化铝膜（12A）到达电路层（2）的表面（12a）的细长的凹部。在槽（35）中形成延伸部分（36），该延伸部分（36）是与沟槽（35）的内表面（35a）一起平坦的Ag层（32）的一部分。 Ag层（32）和电路层（12）通过在形成沟槽（35）的部分中的延伸部分（36）由具有低电阻值的Ag直接电连接。

4. 发明公开

EP2816593A4 SOLDER JOINT STRUCTURE, POWER MODULE, HEAT-SINK-ATTACHED SUBSTRATE FOR POWER MODULE, METHOD FOR PRODUCING SAID SUBSTRATE, AND PASTE FOR FORMING SOLDER UNDERLAYER 审中-公开
标题翻译：焊接连接，电源模块的功率模块，用于生产该衬底，膏生产LÖTUNTERSCHICHT散热器安装型基板
公开(公告)号：EP2816593A4
公开(公告)日：2016-07-06
申请号：EP13748657
申请日：2013-02-14
申请人： MITSUBISHI MATERIALS CORP
发明人： NISHIMOTO SHUJI , NISHIKAWA KIMIHITO , NAGATOMO YOSHIYUKI
IPC分类号： H01L23/40 , B23K1/00 , B23K1/19
CPC分类号： H01L24/33 , B23K1/0016 , B23K1/19 , B23K1/203 , B23K35/0222 , B23K35/0244 , B23K35/025 , B23K35/0272 , B23K35/30 , B23K35/3006 , B23K35/36 , B23K35/3602 , B23K35/3607 , H01L23/367 , H01L23/3735 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/03505 , H01L2224/04026 , H01L2224/27505 , H01L2224/29005 , H01L2224/29083 , H01L2224/29111 , H01L2224/29239 , H01L2224/29286 , H01L2224/29299 , H01L2224/29324 , H01L2224/29339 , H01L2224/29386 , H01L2224/32225 , H01L2224/32245 , H01L2224/83192 , H01L2224/8321 , H01L2224/83539 , H01L2224/83686 , H01L2224/83801 , H01L2224/8384 , H01L2924/01013 , H01L2924/01028 , H01L2924/0105 , H01L2924/014 , H01L2924/05432 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/15787 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/01047 , H01L2924/01029 , H01L2924/01051 , H01L2924/01049 , H01L2924/207 , H01L2924/05341 , H01L2924/05442 , H01L2924/053 , H01L2924/206
摘要： There are provided a solder joint structure, a power module using the joint structure, a power module substrate with a heat sink and a method of manufacturing the same, as well as a solder base layer forming paste which is disposed and fired on a metal member to thereby react with an oxide film generated on the surface of the metal member and form the solder base layer on the metal member, capable of suppressing the occurrence of waviness and wrinkles on the surface of the metal member even at the time of loading the power cycle and heat cycle and improving the joint reliability with a joint member.

5. 发明公开

EP2940727A4 SUBSTRATE FOR POWER MODULE, SUBSTRATE FOR POWER MODULE HAVING METAL MEMBER, POWER MODULE HAVING METAL MEMBER, METHOD FOR MANUFACTURING SUBSTRATE FOR POWER MODULE, METHOD FOR MANUFACTURING SUBSTRATE FOR POWER MODULE HAVING METAL MEMBER 审中-公开
标题翻译：基板电源模块，基板与金属元素，金属元素，用于生产基板的功率模块，制造用于功率模块的衬底，金属元素电源模块电源模块
公开(公告)号：EP2940727A4
公开(公告)日：2016-05-25
申请号：EP13866760
申请日：2013-12-20
申请人： MITSUBISHI MATERIALS CORP
发明人： NISHIMOTO SHUJI , NAGATOMO YOSHIYUKI
IPC分类号： H01L23/36 , C04B37/02 , H01L23/40 , H05K1/02
CPC分类号： H05K1/0271 , C04B37/021 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/402 , C04B2237/407 , C04B2237/86 , H01L23/3735 , H01L23/42 , H01L23/473 , H01L2224/32225 , H05K1/0203 , H05K1/0298 , H05K1/0306 , H05K1/09 , H05K3/0061 , H05K3/465 , H05K7/14
摘要： A power module substrate includes an insulating layer (11), a circuit layer (12) that is formed on a first surface of the insulating layer, and a metal layer (13) that is formed on a second surface of the insulating layer, in which a first base layer (20) is laminated on a surface of the metal layer on the opposite side of the surface to which the insulating layer is provided, and the first base layer has: a first glass layer that is formed at the interface with the metal layer; and a first Ag layer that is laminated on the first glass layer.
摘要翻译：一种功率模块用基板包括位于绝缘层（11），电路层（12）没有被形成在绝缘层的第一表面，和一个金属层（13）也被形成在绝缘层的第二表面上，在其中，第一基极层（20）层叠在所述表面的相对侧上的金属层的表面上，以其中设置有绝缘层，并且所述第一基础层具有：第一玻璃层并在与所述界面处形成所述金属层; 和第一Ag层被层压做的第一玻璃层上。

6. 发明公开

EP2908333A4 SEMICONDUCTOR DEVICE, CERAMIC CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-实审转让
标题翻译：半导体部件，陶瓷电路基板与半导体元件制造方法
公开(公告)号：EP2908333A4
公开(公告)日：2016-06-08
申请号：EP13846215
申请日：2013-10-07
申请人： MITSUBISHI MATERIALS CORP
发明人： NISHIMOTO SHUJI , NAGATOMO YOSHIYUKI , NAGASE TOSHIYUKI
IPC分类号： H01L21/60 , H01L23/373 , H01L23/488
CPC分类号： H01L24/32 , C04B37/026 , C04B2237/06 , C04B2237/125 , C04B2237/126 , C04B2237/366 , C04B2237/402 , C04B2237/597 , C04B2237/708 , C04B2237/72 , H01L23/3735 , H01L23/473 , H01L23/49822 , H01L24/29 , H01L24/48 , H01L24/83 , H01L25/07 , H01L25/18 , H01L33/641 , H01L2224/2731 , H01L2224/2732 , H01L2224/27505 , H01L2224/29082 , H01L2224/29083 , H01L2224/29188 , H01L2224/29294 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29387 , H01L2224/29388 , H01L2224/32225 , H01L2224/32227 , H01L2224/32245 , H01L2224/4809 , H01L2224/48227 , H01L2224/48245 , H01L2224/73265 , H01L2224/83192 , H01L2224/83203 , H01L2224/83539 , H01L2224/83595 , H01L2224/83695 , H01L2224/8384 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/0541 , H01L2924/01047 , H01L2224/45099
摘要： A semiconductor device (1) comprises a circuit layer (12) composed of a conductive material, and a semiconductor element (3) mounted on the circuit layer (12), wherein an underlayer (31) having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer (12), a bonding layer (38) composed of a sintered body of a bonding material including an organic substance and at least one or both of metal particles and metal oxide particles is formed on the underlayer (31), and the circuit layer (12) and the semiconductor element (3) are bonded together via the underlayer (31) and the bonding layer (38).

7. 发明专利

JP2017118061A 回路基板の製造方法、回路基板、および半導体装置审中-公开
公开(公告)号：JP2017118061A
公开(公告)日：2017-06-29
申请号：JP2015254969
申请日：2015-12-25
申请人：三菱マテリアル株式会社 , Mitsubishi Materials Corp
发明人： NISHIMOTO SHUJI , NAGATOMO YOSHIYUKI
IPC分类号： H01L23/12 , C03C8/18 , H01L23/15 , H01L23/473 , H05K1/02 , H05K3/46
摘要：【課題】熱膨張率が互いに異なる異種材料どうしの接合によって生じる反りを低減し、絶縁層の湾曲による損傷防止、および半導体素子の接合性を向上させる。【解決手段】回路層上にガラスを含有するAgペーストを塗布する塗布工程と、塗布した前記Agペーストを焼成し、ガラスを含有するAgペーストの焼成体からなるAg焼成層を形成する焼成工程と、を備え、前記焼成工程における前記Agペーストの焼成温度は、250℃以上、350℃未満であり、前記Agペーストに含有されるガラスは、ガラスの全量を100mol%とした時に、P2O5が30mol%以上、65mol%以下、SnOが30mol%以上、65mol%以下、SiO2が0.1mol%以上、10mol%以下、Al2O3が0.1mol%以上、10mol%以下、B2O3が0.1mol%以上、10mol%以下、の組成をもつ。【選択図】図1

8. 发明专利

JP2014078558A Semiconductor device, ceramic circuit board, and method for manufacturing semiconductor device 有权
标题翻译：半导体器件，陶瓷电路板及制造半导体器件的方法
公开(公告)号：JP2014078558A
公开(公告)日：2014-05-01
申请号：JP2012224257
申请日：2012-10-09
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： NISHIMOTO SHUJI , NAGATOMO YOSHIYUKI , NAGASE TOSHIYUKI
IPC分类号： H01L25/07 , H01L21/52 , H01L25/18
CPC分类号： H01L24/32 , C04B37/026 , C04B2237/06 , C04B2237/125 , C04B2237/126 , C04B2237/366 , C04B2237/402 , C04B2237/597 , C04B2237/708 , C04B2237/72 , H01L23/3735 , H01L23/473 , H01L23/49822 , H01L24/29 , H01L24/48 , H01L24/83 , H01L25/07 , H01L25/18 , H01L33/641 , H01L2224/2731 , H01L2224/2732 , H01L2224/27505 , H01L2224/29082 , H01L2224/29083 , H01L2224/29188 , H01L2224/29294 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29387 , H01L2224/29388 , H01L2224/32225 , H01L2224/32227 , H01L2224/32245 , H01L2224/4809 , H01L2224/48227 , H01L2224/48245 , H01L2224/73265 , H01L2224/83192 , H01L2224/83203 , H01L2224/83539 , H01L2224/83595 , H01L2224/83695 , H01L2224/8384 , H01L2924/00014 , H01L2924/12041 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/0541 , H01L2924/01047 , H01L2224/45099
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can efficiently transfer heat from a semiconductor element to a circuit layer side and in which a circuit layer and a semiconductor element are surely bonded using a bonding material containing at least one or both of a metal particle and a metal oxide particle and an organic material, a ceramic circuit board used in the semiconductor device, and a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device 1 comprises a circuit layer 12 composed of a conductive material and a semiconductor element 3 mounted on the circuit layer 12. A base layer 31 in which a porosity is not less than 5% and not more than 55% is formed on one surface of the circuit layer 12. A bonding layer 38 composed of a fired body of a bonding material containing at least one or both of a metal particle and a metal oxide particle and an organic material is formed on the base layer 31. The circuit layer 12 and the semiconductor element 3 are bonded via the base layer 31 and the bonding layer 38.
摘要翻译：要解决的问题：提供一种半导体器件，其可以有效地将热量从半导体元件传递到电路层侧，并且其中电路层和半导体元件使用包含至少一种或两种金属的接合材料可靠地接合颗粒和金属氧化物颗粒和有机材料，用于半导体器件的陶瓷电路板及其制造方法。半导体器件1包括由导电材料和半导体元件构成的电路层12 安装在电路层12上。在电路层12的一个表面上形成孔隙率不小于5％且不大于55％的基底层31.由烧结体在基底层31上形成包含金属粒子和金属氧化物粒子以及有机材料中的至少一种或两者的结合材料。电路层12和半导体元件 ent 3通过基底层31和结合层38结合。

9. 发明专利

JP2012174366A Paste for forming solder ground layer 有权
标题翻译：用于形成焊接地层
公开(公告)号：JP2012174366A
公开(公告)日：2012-09-10
申请号：JP2011032425
申请日：2011-02-17
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： NISHIKAWA MASAHITO , NAGATOMO YOSHIYUKI , NISHIMOTO SHUJI
IPC分类号： H01B1/22 , B22F1/00 , H01L21/52
CPC分类号： H01L2224/83815 , H01L2224/8384
摘要： PROBLEM TO BE SOLVED: To provide a paste for forming a solder ground layer capable of forming a solder ground layer having a flat surface by applying the paste onto a circuit and firing the paste when solder joining an electronic component such as a semiconductor element onto the circuit.SOLUTION: The paste for forming a solder ground layer used when an electronic component is solder joined onto a circuit contains at least a metal powder and a resin. When the distortion amount is measured in a state where stress is not applied after applying a shear stress for 1 min with a shear rate of 10 s, the distortion amount 2 min after releasing the shear goes below -40%, assuming the distortion amount is 0 at a moment in time when the shear stress is released.
摘要翻译：要解决的问题：提供一种用于形成能够形成具有平坦表面的焊接接地层的焊膏，该焊料接地层通过将糊料施加到电路上并在焊接诸如半导体的电子部件的焊料时烧结该糊料元件到电路上。解决方案：当将电子部件焊接到电路上时使用的用于形成焊料接地层的糊料至少含有金属粉末和树脂。当在剪切速率为10s <1/2时施加剪切应力1分钟后，在不施加应力的状态下测量变形量时，在2分钟后的变形量假设当释放剪切应力的时刻，失真量为0，释放剪切力就降至-40％以下。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2010238958A Conductive composition, manufacturing method of solar cell using the same, and solar cell 有权
标题翻译：导电组合物，使用其的太阳能电池的制造方法和太阳能电池
公开(公告)号：JP2010238958A
公开(公告)日：2010-10-21
申请号：JP2009086028
申请日：2009-03-31
申请人： Mitsubishi Materials Corp , 三菱マテリアル株式会社
发明人： UESUGI RYUJI , NISHIMOTO SHUJI , KUROMITSU YOSHIO
IPC分类号： H01L31/04
CPC分类号： Y02E10/546
摘要： PROBLEM TO BE SOLVED: To assure proper electrical performance of an available electrode and adhesion to a substrate. SOLUTION: A conductive composition contains silver powder, glass powder without lead and bismuth which contains B 2 O 3 , ZnO, and alkaline earth metal oxide, and vehicle of organic substance, to form an electrode 13 which penetrates a silicon nitride layer 11 to be conductive to an n-type semiconductor layer 12 formed under the layer 11. The ratio of alkaline earth metal oxide in the composition is 20 mol% or more and 50 mol% or below. The basicity of glass powder is 0.3 or more and 1.0 or below, and transition point of glass is 400°C or more and 550°C or below. The ratio of B 2 O 3 in the composition is preferred to be 20 mol% or more and 70 mol% or below, and that of ZnO in the composition is preferred to be 0.1 mol% or more and 60 mol% or below. The alkaline earth metal oxide is further preferred to contain at least one selected from among MgO, BaO, CaO, and SrO. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：确保可用电极的适当电气性能和对基板的粘附。
解决方案：导电组合物含有银粉，不含铅和铋的玻璃粉末，其含有B 2 O 3 ，ZnO和碱土金属氧化物，以及载体形成电极13，该电极贯穿形成在层11的下方的n型半导体层12导电的氮化硅层11.构成中的碱土金属氧化物的比例为20摩尔％以上且50以下 mol％以下。玻璃粉的碱度为0.3以上且1.0以下，玻璃的转变点为400℃以上且550℃以下。组合物中B 2 3 的比例优选为20摩尔％以上且70摩尔％以下，组合物中ZnO的比例优选为0.1摩尔％以上且60摩尔％以下。碱土金属氧化物进一步优选含有选自MgO，BaO，CaO和SrO中的至少一种。版权所有（C）2011，JPO＆INPIT

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