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    • 10. 发明专利
    • SEMICONDUCTOR RADIATION DETECTING ELEMENT
    • JPH10311878A
    • 1998-11-24
    • JP12224697
    • 1997-05-13
    • DORYOKURO KAKUNENRYOMITSUBISHI HEAVY IND LTD
    • WADA TAKAOISHIBASHI YUZOISHII SHIGERUKURODA YOSHIKATSU
    • G01T1/24G01T1/26H01L31/09H01L31/115
    • PROBLEM TO BE SOLVED: To perform a precise detection without being influenced by the temperature fluctuation of a detecting element by detecting radiation dose on the basis of the ratio of resistance values of a plurality of semiconductors having the same temperature dependency of resistance value change ratio and differed in thickness. SOLUTION: When a radiation is absorbed, a fixed positive charge of a quantity according to the radiation total dose is generated in an insulating layer 12 and an insulating film 14. This fixed positive charge increases the resistance values of the parts contact with the insulating layer 12 and the insulating film 14 in p-type Si layers 13a, 13b. The respective resistance value change ratios of the p-type Si layers 13a, 13b are differed depending on thickness. The output value of an electrode 15b in which the voltage applied to an electrode 15a is partially divided by the p-type Si layers 13a, 13b is detected according to the difference in resistance value change ratio between the p-type Si layers 13a, 13b, whereby the radiation total dose can be measured. Since the p-type Si layers 13a, 13b of this detecting element can be formed in the same manufacturing process, a precise detection can be performed with being hardly influenced by the error by temperature fluctuation of the detecting element itself.