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1. 发明专利

JP2002274646A DELIVERY SERVICE SYSTEM AND DELIVERY SERVICE METHOD 失效
公开(公告)号：JP2002274646A
公开(公告)日：2002-09-25
申请号：JP2001072774
申请日：2001-03-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： B65G61/00 , G06Q30/06 , G06Q50/00 , G06Q50/28 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To solve the problem in delivery, wherein the delivery of a home delivery article and postal matter (including postal registered delivery letter) is not informed to a receiver, so if the receiver is not at home for a long period of time, the delivery dealer and post office can't know its forwarding address so that the delivery goods should be stored for a long period of time in a storage place of a neighbor, delivery dealer or post office. SOLUTION: This delivery service system is provided with a receiver information storage means for storing receiver information including a previously registered receiver's desired delivery address and a communication address of a client terminal device, and a receiver information updating means for obtaining update information to new receiver information and updating the receiver information when a request for updating the receiver information is given from the receiver.

2. 发明专利

JP2002269270A PRODUCT SUPPORT SYSTEM AND PRODUCT SUPPORT METHOD 失效
公开(公告)号：JP2002269270A
公开(公告)日：2002-09-20
申请号：JP2001072762
申请日：2001-03-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： G06Q10/00 , G06F17/30 , G06Q50/00 , G06Q50/10 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To solve the problems that technical terms are frequently used in a method for coping with product defectives written in an instruction manual attached to a product in purchasing, the meanings of the terms are hard to understand, and as the operation in the coping method is described in detail, the number of pages of a manual is increased so that it takes much time to find the page describing the coping method, further the contents of the instruction manual are hard to understand and hardly used. SOLUTION: A keyword is used to characterize a disadvantage caused in a product obtained from a user of a product as an object for support. A support information storage means storing the support information illustrating various disadvantages generated in the product as the object for support is retrieved to extract the support information related to the corresponding disadvantages, and the extracted information is transmitted to a client terminal device to which the user refers.

3. 发明专利

JPH10209173A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH10209173A
公开(公告)日：1998-08-07
申请号：JP1131097
申请日：1997-01-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： H01L21/28 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L29/417 , H01L29/73 , H01L29/732
摘要： PROBLEM TO BE SOLVED: To provide a good and stable semiconductor device and its manufacturing method, which favorably etches for forming contact holes, forms good holes for emitter regions and reduces the cell size and the number of process steps. SOLUTION: A polysilicon film 9a is formed on the entire surface and it is implanted with ions to convert this film 9a on the outer base regions to a p-type polysilicon film 9, and the polysilicon film 9a on a collector diffusion layer to an n-type polysilicon film 9b. The n-type polysilicon film 9b and p-type polysilicon film are respectively disposed on the collector regions and outer base regions to be patterned, and holes 24 are formed simultaneously for forming emitter regions. Thus good contact hole and etching of emitter opening part can be conducted, and the number of masks can be reduced.

4. 发明专利

JPH06310525A SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH06310525A
公开(公告)日：1994-11-04
申请号：JP9787793
申请日：1993-04-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： H01L27/04 , H01L21/331 , H01L21/822 , H01L21/8222 , H01L27/06 , H01L29/73 , H01L29/732
摘要： PURPOSE:To realize large capacitance of a capacity element without affecting a bipolar transistor. CONSTITUTION:A first polycrystalline silicon film 11 and a WSi film 12 are formed at a desired position on a first layer insulation film 10, a layer insulation film is formed on the first layer insulation film 10 and in the WSi film 12, a part of a fourth layer insulation film 24 corresponding to the WSi film 12 is formed thinner than a part of the fourth layer insulation film 24 corresponding to an emitter region 8 by an etching back method and a polycrystalline silicon film is formed on the fourth layer insulation film 24. A third polycrystalline silicon 27 is provided to a position corresponding to the WSi film 12 by patterning.

5. 发明专利

JPH04323832A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04323832A
公开(公告)日：1992-11-13
申请号：JP12261691
申请日：1991-04-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： SUDA KAKUTAROU , KINOSHITA YASUSHI , IKEDA TATSUHIKO
IPC分类号： H01L21/76 , H01L21/331 , H01L29/205 , H01L29/73 , H01L29/732
摘要： PURPOSE:To provide electrical isolation from an adjacent element and reduce steps between a base electrode and emitter/collector electrodes in a hetero bipolar transistor having a base layer which has a narrower energy band gap than a collector layer and an emitter layer. CONSTITUTION:An emitter layer 5 is also formed on an epitaxial layer 3 other than a base layer forming region. Trench-type element isolation layers 10 which reach a semiconductor substrate 1 from the surfaces of the emitter layers 5 are formed and, further, a trench-type collector-base isolation layer 11 which reaches the epitaxial layer 3 from the surface of the emitter layer 5 in a region which includes at least a part of the base layer 4.

6. 发明专利

JPS63246875A SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63246875A
公开(公告)日：1988-10-13
申请号：JP8161587
申请日：1987-04-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： ARIMA HIDEAKI , OZAKI KOJI , KOBAYASHI KIYOTERU , KINOSHITA YASUSHI , OMORI TOSHIAKI , TATEISHI JUNJI
IPC分类号： H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To make it possible to open a tunnel region in a submicron order and to obtain a high density EEPROM, by providing a substrate, an impurity diffused layer, which is formed in the substrate, and double-layer films of a silicon oxide film and a silicon nitride film, which are formed on the impurity diffused layer at a part other than a tunnel insulating film. CONSTITUTION:Double-layer films 3 and 4 comprising Si3N4/SiO2 are formed in the surface of a semiconductor substrate before a tunnel region is formed. The Si3N4 is patterned by plasma etching. Thereafter, with the Si3N4 as a mask, the SiO2 3 is etched by a wet method using fluoric acid solution. Therefore, a tunnel region in a submicron order can be opened in the surface of the substrate 1 without any damage. Thus the memory cell can be proportionally reduced, and a large-capacity, highly reliable EEPROM (Electrically Erasable and Programmable Reed only Memory) is obtained.

7. 发明专利

JPS62249471A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62249471A
公开(公告)日：1987-10-30
申请号：JP9512386
申请日：1986-04-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHASHI TAKETO , KINOSHITA YASUSHI , SUDA KAKUTAROU , NISHIKAWA KIICHI
IPC分类号： H01L21/768 , H01L21/822 , H01L27/04
摘要： PURPOSE:To form a resistance region with a very high resistance value uniformly and facilitate high integrity of a device by a method wherein a part of a layer insulating film which has a crystalline structure and separates different wirings is made to be amorphous by ion implantation of impurity. CONSTITUTION:A layer insulating film 7 is formed on 1st layer wirings 6 formed on an insulating film 3 by predetermined processes. Then optional impurity is implanted by ion implantation in a required region by using a mask such as a resist film. With this process, this part of the layer insulating film 7 is made to be amorphous and an amorphous layer resistance region 8 is formed. Then through-holes are formed. After that, 2nd layer wiring 9 is formed. Therefore, the amorphous layer resistance region 8 can function as a high resistance region and can also function as a through-hole.

8. 发明专利

JPS62247548A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS62247548A
公开(公告)日：1987-10-28
申请号：JP9091486
申请日：1986-04-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI , SUDA KAKUTAROU , IKEDA TATSUHIKO , HIRAO TADASHI
IPC分类号： H01L21/768
摘要： PURPOSE:To obtain a semiconductor device that can select and connect any resistor formed in a substrate to a wiring layer without restrition due to a first layer of Al wiring by a method wherein a contact layer containing high melting point metal silicide is formed in connection to the resistor, and the resistor and a wiring layer are connected through the contact layer. CONSTITUTION:Enen when a first layer of Al wiring 8 is interconnected in what manner according to the design criterion, because an MoSi2 wiring 11 as a contact layer connected to a diffusion resistor 7 is formed under an interlayer insulating film 12, the degree of freedom of construction of a semiconductor device is enhanced with out limited by the wiring pitch of the first layer of Al wiring 8 and length of the diffusion resistor 7. Accordingly at a gate array and the like the slicing process is started at time when a resistance contact to the diffusion resistor 7 thereof is to be formed, and connection to the diffusion resistor 7 having the proper resistance value can be attained. Moreover even when the working electric power source voltage is changed, resistance to decide logic amplitude can be selected at the slicing process.

9. 发明专利

JP2002074181A SYSTEM FOR DETERMINING PURCHASE OF PARTS BY COMPUTER 失效
公开(公告)号：JP2002074181A
公开(公告)日：2002-03-15
申请号：JP2000261322
申请日：2000-08-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： G06Q30/06 , G06Q30/02 , G06Q50/00 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To solve a problem that labor and time are required for determining the purchase of parts because the determination is almost executed by manual operation and manhour for selecting parts is increased when there are many sorts of parts to be used. SOLUTION: Replied parts information entering the numerical values of presented specifications corresponding to the specification items of parts presented from a parts maker is received through a network and a computer expresses specification values presented by plural parts makers in each specification item as indices and/or coefficients to be easily evaluated and extracts optimum parts.

10. 发明专利

JPH11214525A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11214525A
公开(公告)日：1999-08-06
申请号：JP1389798
申请日：1998-01-27
申请人： MITSUBISHI ELECTRIC CORP
发明人： KINOSHITA YASUSHI
IPC分类号： H01L21/8234 , H01L27/088
摘要： PROBLEM TO BE SOLVED: To mixedly mount a standard (high-speed) MOS transistor and a high breakdown voltage MOS transistor by suppressing the addition of the number of manufacturing processes of a semiconductor device. SOLUTION: In a method for manufacturing a semiconductor device where transistor regions with different breakdown voltages, namely a standard breakdown voltage MOS transistor region A and a high breakdown voltage MOS transistor region B, are mixedly mounted, an oxidation acceleration substance 7 is selectively injected to the high breakdown voltage transistor region B on a well diffusion layer 1 of a semiconductor substrate, gate oxidation is made to the entire surface on the transistor region of the semiconductor substrate, and the gate oxide film of the high breakdown voltage MOS transistor region B is formed thicker than the gate oxide film of the standard breakdown voltage MOS transistor region.

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