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    • 5. 发明授权
    • Method and data card for shielding short message receiving function
    • 屏蔽短信接收功能的方法和数据卡
    • US08660594B2
    • 2014-02-25
    • US13520804
    • 2010-09-25
    • Yi ZhangGang Xue
    • Yi ZhangGang Xue
    • H04W4/00
    • H04W8/183H04W4/14H04W60/00H04W92/08
    • The disclosure discloses a method for shielding a short message receiving function. The method includes the following steps of: storing parameters related to short-message-receiving-function-shielding in an Element File (EF) in a Subscriber Identity Model (SIM) card; performing inter-verification by utilizing the EF in the SIM-card and a Non Volatile (NV) random access memory in a data card to determine whether the SIM-card is applied to the data card; and when the SIM-card is determined to be applied to the data card, reporting the parameters related to short-message-receiving-function-shielding to a network during the process of attaching mobile terminal to the network. Compared with the conventional art, the technical solution of the disclosure can shield the short message receiving function without generating short message fee, so as to enhance the stability of the data service to a large extent and increase the flexibility for a subscriber in selecting the service type at the terminal.
    • 本公开公开了一种用于屏蔽短消息接收功能的方法。 该方法包括以下步骤:在用户识别模型(SIM)卡中的元素文件(EF)中存储与短消息接收功能屏蔽有关的参数; 通过利用SIM卡中的EF和数据卡中的非易失性(NV)随机存取存储器来执行相互验证,以确定SIM卡是否被应用于数据卡; 并且当SIM卡被确定为应用于数据卡时,在将移动终端附着到网络的过程中向网络报告与短消息接收功能屏蔽有关的参数。 与传统技术相比,本发明的技术方案可以屏蔽短消息接收功能而不产生短消息费用,从而在很大程度上提高数据业务的稳定性,增加用户在选择业务时的灵活性 在终端上键入。
    • 7. 发明申请
    • PLANAR CELL ON CUT USING IN-SITU POLYMER DEPOSITION AND ETCH
    • 使用现场聚合物沉积和蚀刻的切片的平面细胞
    • US20110195578A1
    • 2011-08-11
    • US12703586
    • 2010-02-10
    • Angela T. HuiGang Xue
    • Angela T. HuiGang Xue
    • H01L21/3065
    • H01L27/11568H01L27/11565
    • A method and manufacture for charge storage layer separation is provided. A layer, such as a polymer layer, is deposited on top of an ONO layer so that the polymer layer is planarized, or approximately planarized. The ONO includes at least a first region and a second region, where the first region is higher than the second region. For example, the first region may be the portion of the ONO that is over the source/drain region, and the second region may be the portion of the ONO that is over the shallow trench. Etching is performed on the polymer layer to expose the first region of the ONO layer, leaving the second region of the ONO unexposed. The etching continues to occur to etch the exposed ONO at the first region so that the ONO layer is etched away in the first region and the second region remains unexposed.
    • 提供了一种电荷存储层分离的方法和制造方法。 诸如聚合物层的层沉积在ONO层的顶部上,使得聚合物层被平坦化或近似平坦化。 ONO包括至少第一区域和第二区域,其中第一区域高于第二区域。 例如,第一区域可以是在源极/漏极区域上的ONO的部分,并且第二区域可以是在浅沟槽上的ONO的部分。 在聚合物层上进行蚀刻以暴露ONO层的第一区域,留下ONO的第二区域未曝光。 蚀刻继续发生以蚀刻在第一区域处的暴露的ONO,使得ONO层在第一区域被蚀刻掉,并且第二区域保持未曝光。