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1. 发明申请

WO2013032691A3 ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：用于半导体器件和相关系统的工程衬底和方法
公开(公告)号：WO2013032691A3
公开(公告)日：2013-04-25
申请号：PCT/US2012050787
申请日：2012-08-14
申请人： MICRON TECHNOLOGY INC , SCHUBERT MARTIN F , BASCERI CEM , ODNOBLYUDOV VLADIMIR , KURTH CASEY , GEHRKE THOMAS
发明人： SCHUBERT MARTIN F , BASCERI CEM , ODNOBLYUDOV VLADIMIR , KURTH CASEY , GEHRKE THOMAS
IPC分类号： H01L21/20 , H01L21/02 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
摘要翻译：本文公开了用于半导体器件的工程衬底。根据特定实施例的装置包括具有包括发射辐射有源区域的多个半导体材料的换能器结构。所述装置还包括具有第一材料和第二材料的工程衬底，所述第一材料和所述第二材料中的至少一个具有至少几乎与所述多个材料中的至少一个的热膨胀系数匹配的热膨胀系数的半导体材料。第一材料和第二材料中的至少一个被定位成接收来自有源区域的辐射并改变光的特性。

2. 发明申请

WO2013032701A2 SOLID STATE TRANSDUCER DEVICES, INCLUDING DEVICES HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：固体状态传感器装置，包括具有集成静电放电保护的装置，以及相关的系统和方法
公开(公告)号：WO2013032701A2
公开(公告)日：2013-03-07
申请号：PCT/US2012050866
申请日：2012-08-15
申请人： MICRON TECHNOLOGY INC , ODNOBLYUDOV VLADIMIR , SCHUBERT MARTIN F
发明人： ODNOBLYUDOV VLADIMIR , SCHUBERT MARTIN F
IPC分类号： H01L27/14 , H01L27/04 , H01L33/00
CPC分类号： H01L27/15 , H01L23/60 , H01L33/0075 , H01L33/0079 , H01L33/382 , H01L33/405 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.
摘要翻译：具有集成静电放电保护和相关系统和方法的固态传感器装置在本文中公开。在一个实施例中，固态换能器装置包括固态发射器和由固态发射器承载的静电放电装置。在一些实施例中，静电放电装置和固态发射器共用共同的第一触点和公共第二触点。在另外的实施例中，固态照明装置和静电放电装置共享共同的外延衬底。在另外的实施例中，静电放电装置位于固态照明装置和支撑基板之间。

3. 发明申请

WO2012170281A3 LONG WAVELENGTH LIGHT EMITTING DEVICES WITH HIGH QUANTUM EFFICIENCIES 审中-公开
标题翻译：具有高量子效率的长波长发光器件
公开(公告)号：WO2012170281A3
公开(公告)日：2013-03-28
申请号：PCT/US2012040268
申请日：2012-05-31
申请人： MICRON TECHNOLOGY INC , SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
发明人： SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
IPC分类号： H01L33/04
CPC分类号： H01L33/502 , H01L33/08 , H01L33/405
摘要： Various embodiments of light emitting devices with high quantum efficiencies are described herein. In one embodiment, a light emitting device includes a first contact, a second contact spaced apart from the first contact, and a first active region between the first and second contacts. The first active region is configured to produce a first emission via electroluminescence when a voltage is applied between the first and second contacts, and the first emission having a first center wavelength. The light emitting device also includes a second active region spaced apart from the first active region. The second active region is configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence, and the second emission having a second center wavelength longer than the first center wavelength.
摘要翻译：本文描述了具有高量子效率的发光器件的各种实施例。在一个实施例中，发光器件包括第一触点，与第一触点间隔开的第二触点，以及第一和第二触点之间的第一有源区。第一有源区域被配置为当在第一和第二触点之间施加电压并且第一发射具有第一中心波长时通过电致发光产生第一发射。发光器件还包括与第一有源区间隔开的第二有源区。第二有源区被配置为吸收第一发射的至少一部分并通过光致发光产生第二发射，并且第二发射具有比第一中心波长长的第二中心波长。

4. 发明申请

WO2013032699A2 SOLID STATE TRANSDUCERS WITH STATE DETECTION, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：具有状态检测的固态传感器以及相关的系统和方法
公开(公告)号：WO2013032699A2
公开(公告)日：2013-03-07
申请号：PCT/US2012050855
申请日：2012-08-15
申请人： MICRON TECHNOLOGY INC , SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
发明人： SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
IPC分类号： H01L27/14 , H01L33/00
CPC分类号： H01L25/167 , H01L27/0255 , H01L33/00 , H01L33/06 , H01L33/32 , H01L33/62 , H01L2924/0002 , H05B33/0893 , H05B37/0227 , Y02B20/341 , H01L2924/00
摘要： Solid state transducers with state detection, and associated systems and methods are disclosed. A solid state transducer system in accordance with a particular embodiment includes a support substrate and a solid state emitter carried by the support substrate. The solid state emitter can include a first semiconductor component, a second semiconductor component, and an active region between the first and second semiconductor components. The system can further include a state device carried by the support substrate and positioned to detect a state of the solid state emitter and/or an electrical path of which the solid state emitter forms a part. The state device can be formed from at least one state-sensing component having a composition different than that of the first semiconductor component, the second semiconductor component, and the active region. The state device and the solid state emitter can be stacked along a common axis. In further particular embodiments, the state-sensing component can include an electrostatic discharge protection device, a thermal sensor, or a photosensor.
摘要翻译：公开了具有状态检测的固态传感器以及相关的系统和方法。根据特定实施例的固态传感器系统包括支撑衬底和由支撑衬底承载的固态发射器。固态发射器可以包括第一半导体部件，第二半导体部件以及第一和第二半导体部件之间的有源区域。该系统可以进一步包括由支撑衬底承载并定位成检测固态发射器的状态和/或固态发射器形成其一部分的电路径的状态装置。状态装置可以由具有与第一半导体部件，第二半导体部件和有源区域不同的组成的至少一个状态感测部件形成。状态装置和固态发射器可以沿着共同的轴线堆叠。在进一步的特定实施例中，状态感测部件可以包括静电放电保护装置，热传感器或光电传感器。

5. 发明申请

WO2013028444A3 VERTICAL SOLID-STATE TRANSDUCERS HAVING BACKSIDE TERMINALS AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：具有背面端子和相关系统的垂直固态传感器及方法
公开(公告)号：WO2013028444A3
公开(公告)日：2013-06-06
申请号：PCT/US2012051057
申请日：2012-08-16
申请人： MICRON TECHNOLOGY INC , ODNOBLYUDOV VLADIMIR , SCHUBERT MARTIN F
发明人： ODNOBLYUDOV VLADIMIR , SCHUBERT MARTIN F
IPC分类号： H01L27/14 , H01L33/00
CPC分类号： H01L33/62 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/08 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/44 , H01L33/501 , H01L33/504 , H01L33/58 , H01L33/647 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Vertical solid-state transducers ("SSTs") having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.
摘要翻译：本文公开了具有背面触点的立体固态换能器（“SST”）。根据特定实施例的SST可以包括在SST的第一侧具有第一半导体材料的换能器结构，在与第一侧相对的SST的第二侧的第二半导体材料以及在第一和第二侧之间的有源区域第二种半导体材料。 SST还可以包括分别电耦合到第一和第二半导体材料的第一和第二触点。第一接触的一部分可以被电介质材料覆盖，并且一部分可以保持通过电介质材料露出。导电载体衬底可以设置在电介质材料上。绝缘通孔可以延伸穿过导电载体衬底到介电材料并且围绕第一触头的暴露部分以限定从第一侧电可接触的第一和第二端子。

6. 发明申请

WO2013036346A2 WAVELENGTH CONVERTERS FOR SOLID STATE LIGHTING DEVICES, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：用于固态照明装置的波长转换器及相关系统和方法
公开(公告)号：WO2013036346A2
公开(公告)日：2013-03-14
申请号：PCT/US2012050118
申请日：2012-08-09
申请人： MICRON TECHNOLOGY INC , SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
发明人： SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
IPC分类号： H01L33/04
CPC分类号： H01L33/26 , H01L33/08 , H01L33/502
摘要： Wavelength converters for solid state lighting devices, and associated systems and methods. A system in accordance with a particular embodiment includes a solid state radiative semiconductor structure having a first region and a second region. The first region is positioned to receive radiation at a first wavelength and has a first composition and an associated first bandgap energy. The second region is positioned adjacent to the first region to receive energy from the first region and emit radiation at a second wavelength different than the first wavelength. The second region has a second composition different than the first composition, and an associated second bandgap energy that is less than the first bandgap energy.
摘要翻译：用于固态照明设备的波长转换器以及相关的系统和方法。根据特定实施例的系统包括具有第一区域和第二区域的固态辐射半导体结构。第一区域被定位成接收第一波长的辐射并且具有第一组分和相关联的第一带隙能量。第二区域被定位为与第一区域相邻以接收来自第一区域的能量并且以不同于第一波长的第二波长发射辐射。第二区域具有不同于第一组分的第二组分以及小于第一带隙能量的相关联的第二带隙能量。

7. 发明申请

WO2013015951A3 WAFER-LEVEL PACKAGING FOR SOLID-STATE TRANSDUCERS AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：固态传感器和相关系统和方法的水平包装
公开(公告)号：WO2013015951A3
公开(公告)日：2013-06-13
申请号：PCT/US2012045203
申请日：2012-07-02
申请人： MICRON TECHNOLOGY INC , ODNOBLYUDOV VLADIMIR
发明人： ODNOBLYUDOV VLADIMIR
IPC分类号： H01L27/146 , H01L27/14 , H01L33/48
CPC分类号： H01L33/58 , H01L27/15 , H01L33/0079 , H01L33/0095 , H01L33/46 , H01L33/486 , H01L33/507 , H01L33/54 , H01L33/60 , H01L2924/0002 , H01L2933/0033 , H01L2924/00
摘要： Wafer-level packaging of solid-state transducers ("SSTs") is disclosed herein. A method in accordance with a particular embodiment includes forming a transducer structure having a first surface and a second surface opposite the first surface, and forming a plurality of separators that extend from at least the first surface of the transducer structure to beyond the second surface. The separators can demarcate lateral dimensions of individual SSTs. The method can further include forming a support substrate on the first surface of the transducer structure, and forming a plurality of discrete optical elements on the second surface of the transducer structure. The separators can form barriers between the discrete optical elements. The method can still further include dicing the SSTs along the separators. Associated SST devices and systems are also disclosed herein.
摘要翻译：本文公开了固态换能器（“SST”）的晶片级封装。根据特定实施例的方法包括形成具有与第一表面相对的第一表面和第二表面的换能器结构，以及形成多个从换能器结构的至少第一表面延伸到第二表面之外的分离器。分离器可以划分各个SST的侧向尺寸。该方法还可以包括在换能器结构的第一表面上形成支撑衬底，以及在换能器结构的第二表面上形成多个离散的光学元件。分离器可以在分立光学元件之间形成障碍物。该方法还可以包括沿着分离器切割SST。本文还公开了相关的SST装置和系统。

8. 发明申请

WO2013032688A3 DISCONTINUOUS PATTERNED BONDS FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：用于半导体器件的不连续图案化的带以及相关的系统和方法
公开(公告)号：WO2013032688A3
公开(公告)日：2013-07-11
申请号：PCT/US2012050768
申请日：2012-08-14
申请人： MICRON TECHNOLOGY INC , SCHELLHAMMER SCOTT D , ODNOBLYUDOV VLADIMIR , FREI JEREMY S
发明人： SCHELLHAMMER SCOTT D , ODNOBLYUDOV VLADIMIR , FREI JEREMY S
IPC分类号： H01L21/20 , H01L21/02 , H01L33/00
CPC分类号： H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/32 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83121 , H01L2224/8314 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
摘要翻译：这里公开了用于半导体器件的不连续键。根据特定实施例的器件包括第一衬底和第二衬底，第一衬底和第二衬底中的至少一个具有多个固态传感器。第二基板可以包括多个凸起和多个中间区域，并且可以以不连续的结合与第一基板结合。单独的固态传感器可以至少部分地设置在对应的中间区域内，并且不连续的连接可以包括将单独的固态传感器连接到对应的中间区域的盲端的粘合材料。本文公开了用于半导体器件的不连续键的相关方法和系统。

9. 发明申请

WO2012129439A3 SOLID STATE OPTOELECTRONIC DEVICE WITH PLATED SUPPORT SUBSTRATE 审中-公开
标题翻译：带支撑衬底的固体光电器件
公开(公告)号：WO2012129439A3
公开(公告)日：2012-11-08
申请号：PCT/US2012030188
申请日：2012-03-22
申请人： MICRON TECHNOLOGY INC , ODNOBLYUDOV VLADIMIR , SCHELLHAMMER SCOTT D
发明人： ODNOBLYUDOV VLADIMIR , SCHELLHAMMER SCOTT D
IPC分类号： H01L33/02 , H01L33/20 , H01L33/36
CPC分类号： H01L51/52 , H01L25/0753 , H01L33/0075 , H01L33/0095 , H01L33/06 , H01L33/382 , H01L33/46 , H01L33/62 , H01L51/5218 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014 , H01L2924/00
摘要： A vertical solid state lighting (SSL) device is disclosed. In one embodiment, the SSL device includes a light emitting structure formed on a growth substrate. Individual SSL devices can include a embedded contact formed on the light emitting structure and a metal substrate plated at a side at least proximate to the embedded contact. The plated substrate has a sufficient thickness to support the light emitting structure without bowing.
摘要翻译：公开了一种垂直固态照明（SSL）设备。在一个实施例中，SSL装置包括形成在生长衬底上的发光结构。单独的SSL装置可以包括形成在发光结构上的嵌入式触点以及至少接近嵌入式触点的一侧电镀的金属基板。镀覆的衬底具有足够的厚度以支撑发光结构而不弯曲。

10. 发明申请

WO2006071328A3 HIGH EFFICIENCY LIGHT-EMITTING DIODES 审中-公开
标题翻译：高效发光二极管
公开(公告)号：WO2006071328A3
公开(公告)日：2008-07-17
申请号：PCT/US2005036538
申请日：2005-10-08
申请人： UNIV CALIFORNIA , TU CHARLES , ODNOBLYUDOV VLADIMIR
发明人： TU CHARLES , ODNOBLYUDOV VLADIMIR
IPC分类号： H01L29/06 , H01L27/15 , H01L33/00 , H01L33/02 , H01L33/12 , H01L33/32
CPC分类号： H01L33/12 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L33/0075 , H01L33/0095 , H01L33/025 , H01L33/32
摘要： High efficiency LEDs produced using a direct-bandgap AlGaInNSbAsP material system grown directly on GaP substrates.
摘要翻译：使用直接在GaP衬底上生长的直接带隙AlGaInNSbAsP材料系统生产的高效率LED。

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