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1. 发明申请

WO2013032691A3 ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：用于半导体器件和相关系统的工程衬底和方法
公开(公告)号：WO2013032691A3
公开(公告)日：2013-04-25
申请号：PCT/US2012050787
申请日：2012-08-14
申请人： MICRON TECHNOLOGY INC , SCHUBERT MARTIN F , BASCERI CEM , ODNOBLYUDOV VLADIMIR , KURTH CASEY , GEHRKE THOMAS
发明人： SCHUBERT MARTIN F , BASCERI CEM , ODNOBLYUDOV VLADIMIR , KURTH CASEY , GEHRKE THOMAS
IPC分类号： H01L21/20 , H01L21/02 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
摘要翻译：本文公开了用于半导体器件的工程衬底。根据特定实施例的装置包括具有包括发射辐射有源区域的多个半导体材料的换能器结构。所述装置还包括具有第一材料和第二材料的工程衬底，所述第一材料和所述第二材料中的至少一个具有至少几乎与所述多个材料中的至少一个的热膨胀系数匹配的热膨胀系数的半导体材料。第一材料和第二材料中的至少一个被定位成接收来自有源区域的辐射并改变光的特性。

2. 发明申请

WO2013032701A2 SOLID STATE TRANSDUCER DEVICES, INCLUDING DEVICES HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：固体状态传感器装置，包括具有集成静电放电保护的装置，以及相关的系统和方法
公开(公告)号：WO2013032701A2
公开(公告)日：2013-03-07
申请号：PCT/US2012050866
申请日：2012-08-15
申请人： MICRON TECHNOLOGY INC , ODNOBLYUDOV VLADIMIR , SCHUBERT MARTIN F
发明人： ODNOBLYUDOV VLADIMIR , SCHUBERT MARTIN F
IPC分类号： H01L27/14 , H01L27/04 , H01L33/00
CPC分类号： H01L27/15 , H01L23/60 , H01L33/0075 , H01L33/0079 , H01L33/382 , H01L33/405 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.
摘要翻译：具有集成静电放电保护和相关系统和方法的固态传感器装置在本文中公开。在一个实施例中，固态换能器装置包括固态发射器和由固态发射器承载的静电放电装置。在一些实施例中，静电放电装置和固态发射器共用共同的第一触点和公共第二触点。在另外的实施例中，固态照明装置和静电放电装置共享共同的外延衬底。在另外的实施例中，静电放电装置位于固态照明装置和支撑基板之间。

3. 发明申请

WO2012170280A1 LIGHT EMITTING DEVICES WITH EFFICIENT WAVELENGTH CONVERSION AND ASSOCIATED METHODS 审中-公开
标题翻译：具有有效波长转换和相关方法的发光装置
公开(公告)号：WO2012170280A1
公开(公告)日：2012-12-13
申请号：PCT/US2012/040260
申请日：2012-05-31
申请人： MICRON TECHNOLOGY, INC. , ODNOBLYUDOV, Vladimir , SCHUBERT, Martin, F.
发明人： ODNOBLYUDOV, Vladimir , SCHUBERT, Martin, F.
IPC分类号： H01L33/26 , H01L33/32 , H01L33/50
CPC分类号： H01L33/502 , H01L33/06 , H01L33/08 , H01L2933/0041
摘要： Various embodiments of light emitting devices with efficient wavelength conversion and associated methods of manufacturing are described herein. In one embodiment, a light emitting device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The active region is configured to produce a light via electroluminescence. The light emitting device also includes a conversion material on the second semiconductor material, the conversion material containing aluminum gallium indium phosphide (AlGalnP) doped with an N-type dopant.
摘要翻译：这里描述了具有有效的波长转换和相关的制造方法的发光器件的各种实施例。在一个实施例中，发光器件包括第一半导体材料，与第一半导体材料间隔开的第二半导体材料，以及第一和第二半导体材料之间的有源区。有源区被配置为通过电致发光产生光。发光器件还包括在第二半导体材料上的转换材料，所述转换材料含有掺杂有N型掺杂剂的铝镓铟磷（AlGaInP）。

4. 发明申请

WO2012102800A1 SOLID STATE LIGHTING DEVICES WITH REDUCED DIMENSIONS AND METHODS OF MANUFACTURING 审中-公开
标题翻译：具有减小尺寸的固态照明装置和制造方法
公开(公告)号：WO2012102800A1
公开(公告)日：2012-08-02
申请号：PCT/US2011/064828
申请日：2011-12-14
申请人： MICRON TECHNOLOGY, INC. , ODNOBLYUDOV, Vladimir
发明人： ODNOBLYUDOV, Vladimir
IPC分类号： H01L33/22 , H01L33/04 , H01L33/38
CPC分类号： H01L33/382 , H01L33/08 , H01L33/44
摘要： Solid state lighting (SSL) devices (e.g., devices with light emitting diodes) with reduced dimensions (e.g., thicknesses) and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first region and a second region laterally spaced apart from the first region and an insulating material between and electrically isolating the first and second regions. The SSL device also includes a conductive material between the first and second regions and adjacent the insulating material to electrically couple the first and second regions in series.
摘要翻译：本文公开了具有尺寸减小（例如，厚度）和制造方法的固态照明（SSL）装置（例如具有发光二极管的装置）。在一个实施例中，SSL设备包括具有第一区域和与第一区域横向间隔开的第二区域的SSL结构以及在第一和第二区域之间的绝缘材料，并且电隔离第一区域和第二区域。 SSL设备还包括在第一和第二区域之间并且与绝缘材料相邻的导电材料，以将串联的第一和第二区域电耦合。

5. 发明申请

WO2010151600A1 HIGH EFFICIENCY LEDS AND LED LAMPS 审中-公开
标题翻译：高效LED和LED灯
公开(公告)号：WO2010151600A1
公开(公告)日：2010-12-29
申请号：PCT/US2010/039684
申请日：2010-06-23
申请人： TISCHLER, Michael , ODNOBLYUDOV, Vladimir , KEOGH, David
发明人： TISCHLER, Michael , ODNOBLYUDOV, Vladimir , KEOGH, David
IPC分类号： H05B37/02
CPC分类号： F21K9/238 , F21K9/233 , F21K9/235 , F21K9/237 , F21K9/64 , F21V3/00 , F21V7/0066 , F21V9/08 , F21V15/01 , F21V23/008 , F21V23/06 , F21V29/70 , F21V29/773 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , H01L25/0753 , H01L27/156 , H01L27/32 , H01L33/0079 , H01L33/28 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/50 , H01L33/58 , H01L33/60 , H01L33/62 , H01L51/50 , H01L2224/48137 , H01L2224/48227 , H01L2224/49107 , H01L2924/13033 , H04N1/02865 , H05B33/0803 , H05B33/0815 , H05B33/0818 , H05B33/0821 , H05B33/0824 , H05B33/0845 , H05B33/0896 , H05B37/0218 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： The present invention relates to a light emitting device comprising a plurality of electrically coupled light emitting elements, wherein each light emitting element has a luminous efficacy vs. current characteristic, wherein said luminous efficacy vs. current characteristic has a maximum luminous efficacy value and wherein at least one of said light emitting devices is operated at a current corresponding to a luminous efficacy value that is within 10% of said maximum luminous efficacy value. The present invention also relates to methods of making said light emitting device, to lamps comprising said light emitting device and to methods of operating said light emitting device.
摘要翻译：本发明涉及包括多个电耦合发光元件的发光器件，其中每个发光元件具有发光效率与电流特性，其中所述发光效率与电流特性具有最大发光效能值，并且其中在所述发光器件中的至少一个以对应于所述最大发光效率值的10％以内的发光效率值的电流工作。本发明还涉及制造所述发光器件的方法，包括所述发光器件的灯以及操作所述发光器件的方法。

6. 发明申请

WO2012170281A3 LONG WAVELENGTH LIGHT EMITTING DEVICES WITH HIGH QUANTUM EFFICIENCIES 审中-公开
标题翻译：具有高量子效率的长波长发光器件
公开(公告)号：WO2012170281A3
公开(公告)日：2013-03-28
申请号：PCT/US2012040268
申请日：2012-05-31
申请人： MICRON TECHNOLOGY INC , SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
发明人： SCHUBERT MARTIN F , ODNOBLYUDOV VLADIMIR
IPC分类号： H01L33/04
CPC分类号： H01L33/502 , H01L33/08 , H01L33/405
摘要： Various embodiments of light emitting devices with high quantum efficiencies are described herein. In one embodiment, a light emitting device includes a first contact, a second contact spaced apart from the first contact, and a first active region between the first and second contacts. The first active region is configured to produce a first emission via electroluminescence when a voltage is applied between the first and second contacts, and the first emission having a first center wavelength. The light emitting device also includes a second active region spaced apart from the first active region. The second active region is configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence, and the second emission having a second center wavelength longer than the first center wavelength.
摘要翻译：本文描述了具有高量子效率的发光器件的各种实施例。在一个实施例中，发光器件包括第一触点，与第一触点间隔开的第二触点，以及第一和第二触点之间的第一有源区。第一有源区域被配置为当在第一和第二触点之间施加电压并且第一发射具有第一中心波长时通过电致发光产生第一发射。发光器件还包括与第一有源区间隔开的第二有源区。第二有源区被配置为吸收第一发射的至少一部分并通过光致发光产生第二发射，并且第二发射具有比第一中心波长长的第二中心波长。

7. 发明申请

WO2013032701A3 SOLID STATE TRANSDUCER DEVICES, INCLUDING DEVICES HAVING INTEGRATED ELECTROSTATIC DISCHARGE PROTECTION, AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
公开(公告)号：WO2013032701A3
公开(公告)日：2013-03-07
申请号：PCT/US2012/050866
申请日：2012-08-15
申请人： MICRON TECHNOLOGY, INC. , ODNOBLYUDOV, Vladimir , SCHUBERT, Martin, F.
发明人： ODNOBLYUDOV, Vladimir , SCHUBERT, Martin, F.
IPC分类号： H01L27/14 , H01L27/04 , H01L33/00
摘要： Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

8. 发明申请

WO2013032688A2 DISCONTINUOUS PATTERNED BONDS FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：用于半导体器件和相关系统和方法的不连续图案
公开(公告)号：WO2013032688A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/050768
申请日：2012-08-14
申请人： MICRON TECHNOLOGY, INC. , SCHELLHAMMER, Scott, D. , ODNOBLYUDOV, Vladimir , FREI, Jeremy, S.
发明人： SCHELLHAMMER, Scott, D. , ODNOBLYUDOV, Vladimir , FREI, Jeremy, S.
IPC分类号： H01L21/20 , H01L21/02 , H01L33/00
CPC分类号： H01L25/0753 , H01L21/187 , H01L21/2007 , H01L21/447 , H01L23/49513 , H01L24/04 , H01L24/06 , H01L24/32 , H01L24/83 , H01L24/94 , H01L24/97 , H01L33/0066 , H01L33/0079 , H01L33/0095 , H01L33/486 , H01L33/62 , H01L2224/32225 , H01L2224/32245 , H01L2224/83001 , H01L2224/83005 , H01L2224/83121 , H01L2224/8314 , H01L2224/83193 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
摘要翻译：本文公开了用于半导体器件的不连续键。根据特定实施例的装置包括第一基板和第二基板，第一基板和第二基板中的至少一个具有多个固态换能器。第二基板可以包括多个突起和多个中间区域，并且可以以不连续的键连接到第一基板。单独的固态换能器可以至少部分地设置在相应的中间区域内，并且不连续键可以包括将各个固态换能器接合到相应的中间区域的盲端的粘合材料。本文公开了用于半导体器件的不连续键的相关方法和系统。

9. 发明申请

WO2012170281A2 LONG WAVELENGTH LIGHT EMITTING DEVICES WITH HIGH QUANTUM EFFICIENCIES 审中-公开
标题翻译：具有高量子效率的长波长发光器件
公开(公告)号：WO2012170281A2
公开(公告)日：2012-12-13
申请号：PCT/US2012/040268
申请日：2012-05-31
申请人： MICRON TECHNOLOGY, INC. , SCHUBERT, Martin, F. , ODNOBLYUDOV, Vladimir
发明人： SCHUBERT, Martin, F. , ODNOBLYUDOV, Vladimir
IPC分类号： H01L33/04
CPC分类号： H01L33/502 , H01L33/08 , H01L33/405
摘要： Various embodiments of light emitting devices with high quantum efficiencies are described herein. In one embodiment, a light emitting device includes a first contact, a second contact spaced apart from the first contact, and a first active region between the first and second contacts. The first active region is configured to produce a first emission via electroluminescence when a voltage is applied between the first and second contacts, and the first emission having a first center wavelength. The light emitting device also includes a second active region spaced apart from the first active region. The second active region is configured to absorb at least a portion of the first emission and produce a second emission via photoluminescence, and the second emission having a second center wavelength longer than the first center wavelength.
摘要翻译：本文描述了具有高量子效率的发光器件的各种实施例。在一个实施例中，发光器件包括第一触点，与第一触点间隔开的第二触点，以及第一和第二触点之间的第一有源区。第一有源区域被配置为当在第一和第二触点之间施加电压并且第一发射具有第一中心波长时通过电致发光产生第一发射。发光器件还包括与第一有源区间隔开的第二有源区。第二有源区被配置为吸收第一发射的至少一部分并通过光致发光产生第二发射，并且第二发射具有比第一中心波长长的第二中心波长。

10. 发明申请

WO2006071328A3 HIGH EFFICIENCY LIGHT-EMITTING DIODES 审中-公开
标题翻译：高效发光二极管
公开(公告)号：WO2006071328A3
公开(公告)日：2008-07-17
申请号：PCT/US2005036538
申请日：2005-10-08
申请人： UNIV CALIFORNIA , TU CHARLES , ODNOBLYUDOV VLADIMIR
发明人： TU CHARLES , ODNOBLYUDOV VLADIMIR
IPC分类号： H01L29/06 , H01L27/15 , H01L33/00 , H01L33/02 , H01L33/12 , H01L33/32
CPC分类号： H01L33/12 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L33/0075 , H01L33/0095 , H01L33/025 , H01L33/32
摘要： High efficiency LEDs produced using a direct-bandgap AlGaInNSbAsP material system grown directly on GaP substrates.
摘要翻译：使用直接在GaP衬底上生长的直接带隙AlGaInNSbAsP材料系统生产的高效率LED。

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