专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH04167561A SWITCHING ELEMENT 失效
公开(公告)号：JPH04167561A
公开(公告)日：1992-06-15
申请号：JP29581390
申请日：1990-10-31
申请人： MATSUSHITA GIKEN KK
发明人： TAOMOTO AKIRA , NICHOGI KATSUHIRO , NANBU TARO
IPC分类号： H01L49/02 , H01L51/05
摘要： PURPOSE:To obtain a switching element of high function by a method wherein an organic semiconductor thin film which changes in resistance from a high resistance state to a low resistance state or vice versa by applying an electrical field to it is sandwiched between a pair of upper and lower electrodes opposed to each other to have a rectification property. CONSTITUTION:A switching element is of a sandwiching type electrode structure composed of a pair of upper 2 and lower electrodes 4 provided to the surface of an insulating substrate 1 sandwiching a lead phthalocyanine thin film (organic semiconductor thin film) 3 between them. The lead phthalocyanine thin film 3 is formed through an evaporation method, the crystal domains 5 close to the upper electrode 4 are larger than the crystal domains 5' close to the lower electrode 2, and the film 3 is constituted asymmetrical in domain size in its thicknesswise direction, so that the switching element is possessed of a rectification property. By this setup, a switching element of this design is able to execute not only a switching operation but, also a rectifying operation, so that it can react to input signals in different ways, in result it is high in function and adapted for the application to a high functional device.

2. 发明专利

JPH03137897A PSEUDO NEURAL FUNCTION ELEMENT 失效
公开(公告)号：JPH03137897A
公开(公告)日：1991-06-12
申请号：JP27531089
申请日：1989-10-23
申请人： MATSUSHITA GIKEN KK
发明人： TAOMOTO AKIRA , ASAKAWA SHIRO , NICHOGI KATSUHIRO
IPC分类号： G11C11/54 , G11C13/00
摘要： PURPOSE:To obtain the pseudo neural function element with forgetfulness characteristics which is reset to a high-resistance state after a memory function and a low-resistance state are continued for a constant time by providing an organic thin film which changes between the high-resistance state and low- resistance state with an electric input signal. CONSTITUTION:On the top surface of a substrate 1, a lower electrode 2, the organic thin film 3, and an upper electrode 4 are formed in order. The thin film 3 is initially in the high-resistance state R1 when a sweep voltage signal is applied between the electrodes 2 and 4 to intensify an electric field E1, but changes into a negative resistance area and then the low-resistance state R2 when an electric field E1 is exceeded. Thus, the element changes between the high-resistance state R1 and low-resistance state R2 reciprocally by a single-time positive and negative electric field sweep. When the electric field excitation is removed after the electric field intensity E1 is exceeded and the low-resistance state R2 is entered, the low-resistance state R2 is held, but the state is not permanent, but reset to the high-resistance state R1 with time. Thus, the pseudo neural function element which has the forgetfulness characteristics is obtained with the independent element of the organic thin film.

3. 发明专利

JPH0685237A ORGANIC THIN-FILM ELECTRONIC COMPONENT AND FORMATION METHOD OF ORGANIC THIN FILM 失效
公开(公告)号：JPH0685237A
公开(公告)日：1994-03-25
申请号：JP17092091
申请日：1991-07-11
申请人： MATSUSHITA GIKEN KK
发明人： NANBU TARO , NICHOGI KATSUHIRO , TAOMOTO AKIRA
IPC分类号： H01L51/05 , H01L51/40 , H01L51/50 , H01L29/28
摘要： PURPOSE:To obtain an organic thin-film electronic component and an organic thin film which are provided with new physical properties by providing a substrate coated with a thin film of phase-separated organic substance below a specific thickness. CONSTITUTION:A substrate is coated directly or indirectly with a thin film of a phase-separated organic substance below one-micron thickness. Such a substrate can be used for an organic thin-film semiconductor component having new physical properties. That is to say, the figure shows a graph indicating the number of revolutions of a spinner versus a phase separation size. From the figure, it can be known that the phase separation size can be controlled freely and that a micron phase separation structure in a new region in the order of submicrons can be achieved. When error bars are compared, it can be understood that the phase separation structure in the order of submicrons can be obtained in the region of 5000rpm or higher, that the error bars themselves are sufficiently small at 10% or lower and that the sizes becomes uniform.

4. 发明专利

JPH0521212A NON-LINEAR RESISTANCE ELEMENT 失效
公开(公告)号：JPH0521212A
公开(公告)日：1993-01-29
申请号：JP16986991
申请日：1991-07-10
申请人： MATSUSHITA GIKEN KK
发明人： NICHOGI KATSUHIRO , TAOMOTO AKIRA , NANBU TARO
IPC分类号： H01C7/00 , H01C7/10
摘要： PURPOSE:To obtain a non-linear resistance element made of organic material that operates at a high speed. CONSTITUTION:The title element is constituted of a charge-transfer complex having an electron donating molecule and electron accepting molecule at least either of which has a long-chain substituent, and is provided with charge transfer layers as a conductive layer and insulation layers composed of long-chain substituents piled up alternately with the charge transfer layers.

5. 发明专利

JPH04168265A PRODUCTION OF ELECTRICALLY CONDUCTIVE ORGANIC THIN FILM AND THIN FILM ELEMENT 失效
公开(公告)号：JPH04168265A
公开(公告)日：1992-06-16
申请号：JP29581290
申请日：1990-10-31
申请人： MATSUSHITA GIKEN KK
发明人： NICHOGI KATSUHIRO , NANBU TARO , TAOMOTO AKIRA
IPC分类号： C09K3/00 , C23C14/12 , H01B1/12 , H01B5/14 , H01B13/00
摘要： PURPOSE:To obtain an electrically conductive org. thin film making effective use of the high electrically conducting function of an org. thin film by doping a thin film of a tetracyanoquinodimethane (TCNQ) deriv. with electron donative molecules and/or metal ions. CONSTITUTION:A thin film of a TCNQ deriv. having a molecular structure with a satd. hydrocarbon chain at the 2-position, e.g. 2-octadecyl-7,7',8,8'- tetracyanoquinodimethane is formed and doped with electron donative molecules of 3,3',5,5'-tetramethylbenzidine and/or metal ions.

6. 发明专利

JPH03137896A STORAGE ELEMENT AND STORAGE DEVICE 失效
公开(公告)号：JPH03137896A
公开(公告)日：1991-06-12
申请号：JP27530789
申请日：1989-10-23
申请人： MATSUSHITA GIKEN KK
发明人： TAOMOTO AKIRA , ASAKAWA SHIRO , NICHOGI KATSUHIRO
IPC分类号： G11C11/54 , G11C13/00
摘要： PURPOSE:To obtain an element which has superior write characteristics and memory storage characteristics by using an organic thin film which enters a high-resistance state and a low-resistance state by electric field application, holds the current resistance state after an electric field is removed, and changes the state fast at high temperature and slow at low temperature. CONSTITUTION:A lower electrode 2, the organic thin film 3, and an upper electrode 4 are formed on the surface of a substrate 1. The organic thin film is initially in the high-resistance state R1 when a sweep voltage signal is applied between the electrodes 2 and 4 to intensify the electric field, but changes into a negative resistance area and then the low-resistance state R2 when electric field intensity E1 is exceeded. When the electric field excitation is removed after the electric field intensity E1 is exceeded and the low-resistance state R2 is entered, the low-resistance state R2 is maintained. When the electric field excitation is reset after electric field intensity E2 is exceeded and the high-resistance state R1 is entered, the high-resistance state R1 is held. The changing speed is faster and faster as the temperature is higher and higher. Thus, the storage element which has superior write characteristics and memory storage characteristics is obtained.

7. 发明专利

JPH03255668A ARTIFICIAL NEURAL FUNCTION CIRCUIT 失效
公开(公告)号：JPH03255668A
公开(公告)日：1991-11-14
申请号：JP14566190
申请日：1990-06-04
申请人： MATSUSHITA GIKEN KK
发明人： NICHOGI KATSUHIRO , TAOMOTO AKIRA , ASAKAWA SHIRO , YOSHIDA KUNIO
IPC分类号： H01L49/00 , H01L51/05
摘要： PURPOSE:To obtain an artificial neural function circuit which is simple in structure, easy to be enhanced in performance and compacted, and similar to an information processing function in a cranial nerve system by a method wherein an organic thin film element which varies in resistance in accordance with an electrical input signal is built in the circuit. CONSTITUTION:Nine organic thin film elements 1-9, three operational amplifiers 10-12, three input terminals 13-15, three output terminals 16-18, and three teacher input terminals 19-21 are provided. When electrical input signals of +10V, +5V, and 0V are given to the input terminals 13, 14, and 15 respectively and an electrical input signal of 0V is given to the teacher input terminals 19-21, a voltage of 0V is applied to the film elements 3, 6, and 9, a voltage of +5V is given to the film elements 2, 5, and 8, and a voltage of 10V is impressed on the film elements 1, 4, and 7. Therefore, the film elements 3, 6, and 9 are kept high in resistance, but the film elements 2, 5, and 8 become low in resistance, and the film elements 1, 4, and 7 become lower in resistance. As the operational amplifiers 10-12 are all equal in input signal, the outputs of the output terminals 16-18 are equal to each other.

8. 发明专利

JPH03137894A ELEMENT ARRAY WITH COMBINED SWITCHING AND MEMORY FUNCTIONS 失效
公开(公告)号：JPH03137894A
公开(公告)日：1991-06-12
申请号：JP27530989
申请日：1989-10-23
申请人： MATSUSHITA GIKEN KK
发明人： ASAKAWA SHIRO , WARATANI KATSUNORI , NICHOGI KATSUHIRO , SAITO YUKIHIRO , TAOMOTO AKIRA
IPC分类号： G11C11/42 , G11C13/00 , H03K19/177
摘要： PURPOSE:To reduce the cost by arraying plural elements which are each sandwiched between a couple of electrodes where thin films which have a switching function and a memory function face each other. CONSTITUTION:Lower electrodes 31 - 36 are formed on an insulating substrate 4, a lead phthalocyanine vapor-deposited film is laminated, and striped electrodes 201 - 211 are laminated thereupon to obtain an array of longitudinally 11 and laterally 6 elements. When a voltage which is higher than a threshold value is applied to a specific electrode intersection, an ON state is stored and a necessary circuit network is formed. When the voltage equal to the threshold value is applied, the intersection part is irradiated with light to store the ON state in the part, and light information can be written directly in the array. When a reverse voltage is applied to the intersection part, the ON state is eliminated. Consequently, the simple material constitution and structure enables a memory function with both an electric signal and a light signal and resets the memory, so the cost is reduced.

9. 发明专利

JPH05190880A OPTICAL SWITCHING ELEMENT 失效
公开(公告)号：JPH05190880A
公开(公告)日：1993-07-30
申请号：JP2066892
申请日：1992-01-10
申请人： MATSUSHITA GIKEN KK
发明人： NICHOGI KATSUHIRO , TAOMOTO AKIRA , NANBU TARO
IPC分类号： H01L51/42 , H01L51/05 , H03K17/78
摘要： PURPOSE:To enable an insulation layer which is formed by a conductive layer as an electron reception body and a substituent and optical switching phenomenon to be speeded up in a lamination body of a charge shift complex which consists of an alkali metal as an electron-donative body and the electron reception body with a long-chain substituent. CONSTITUTION:A charge shift complex is manufactured by using metal potassium as an electron-donative body and 2-dodecyl-7,7,8,9-tetracyanoquinodimetal C12TCNQ with a long alkyl group as an electron-reception body. A conductive layer sheet consisting of C12TCNQ and an insulation layer sheet consisting of docosyl group are laminated alternately. In this case, coulomb interaction between a carrier of the conductive layer and that of the adjacent conductive layer becomes extremely weak due to presence of the insulation layer. Photo switching phenomenon in the charge shift complex is due to self proliferation process of the carrier and reduction in coulomb interaction between carriers speeds up operation.

10. 发明专利

JPH05183175A OPTICAL SWITCHING ELEMENT 失效
公开(公告)号：JPH05183175A
公开(公告)日：1993-07-23
申请号：JP1741992
申请日：1992-01-04
申请人： MATSUSHITA GIKEN KK
发明人： NICHIYOUGI KATSUHIRO , TAOMOTO AKIRA , NANBU TARO , MURAKAMI MUTSUAKI
IPC分类号： H01L27/14 , H01L31/04 , H01L51/05 , H01L51/42 , H03K17/78
摘要： PURPOSE:To accelerate an operating speed of an optical switching element to be used in an electronic industrial field by reducing an optical switching phenomenon in a charge transfer complex to a low order. CONSTITUTION:A substituent of a long chain is modified at one or both of an electron donor and an electron acceptor to form a structure of a crystal or a thin film to be formed thereby in an alternately laminated layer structure of a conductive layer and an insulating layer. In this case, a Coulomb interaction between carrier of the conductive layer and carrier of the adjacent conductive layer is very weakened. Then, an optical switching phenomenon of a charge transfer complex is generated by self-breeding step of the carrier, but since a decrease in the coulomb interaction between the carriers alleviates bounding of the carrier, its operating speed is accelerated.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式