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    • 6. 发明公开
    • Josephson devices and process for manufacturing the same
    • 约瑟夫森Einrichtungen和Verfahren祖德伦Herstellung。
    • EP0366949A1
    • 1990-05-09
    • EP89118259.4
    • 1989-10-02
    • MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    • Higashino, HidetakaMizuno, KoichiAdachi, HideakiSetsune, KentaroEnokihara, AkiraHatta, ShinichiroWasa, KiyotakaKohiki, ShigemiMatsuchima, Tomoaki
    • H01L39/24H01L39/22
    • H01L39/2496Y10S505/702Y10S505/873Y10S505/874
    • A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-­shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-­shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.
    • 约瑟夫逊装置,包括通过在衬底上形成包括多个Cu-O层的第一层状氧化物超导体薄膜,其上的阻挡层和阻挡层上的第二层状氧化物超导体薄膜而形成的结。 根据本发明的约瑟夫逊装置通过在基板上形成第一层状氧化物超导体薄膜来制造,在相同的真空室中形成阻挡层,限定图案到所述阻挡层和所述第一层状氧化物超导薄层 膜,在所述阻挡层上形成层间绝缘膜,去除作为结的区域中的所述层间绝缘膜,进行暴露于氧等离子体,形成第二层状氧化物超导体薄膜,与第二层状氧化物超导体薄膜的一部分接触 所述阻挡层并且限定到所述第二层状氧化物超导体薄膜的图案。