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1. 发明授权

EP0818831B1 Superconducting tunnel junction element and superconducting device 失效
标题翻译：一种超导隧道结元件，和超导设备
公开(公告)号：EP0818831B1
公开(公告)日：2003-01-29
申请号：EP97111415.2
申请日：1997-07-05
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Adachi, Hideaki , Sakai, Masahiro , Odagawa, Akihiro , Setsune, Kentaro
IPC分类号： H01L39/22
CPC分类号： H01L39/225

2. 发明公开

EP1168308A3 Magnetic recording medium and magnetic recording apparatus using the same 审中-公开
标题翻译：磁记录介质和磁记录装置
公开(公告)号：EP1168308A3
公开(公告)日：2002-01-30
申请号：EP01304912.7
申请日：2001-06-05
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Sakakima, Hiroshi , Satomi, Mitsuo , Sugita, Yasunari , Adachi, Hideaki , Kawawake, Yasuhiro , Iijima, Kenji
IPC分类号： G11B5/66 , G11B5/00 , G11B5/82
CPC分类号： G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/001 , Y10S428/90 , Y10T428/115 , Y10T428/12465
摘要： A magnetic recording medium includes a magnetic film 1 for signal recording and a film 2 containing M 2 O y as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8

3. 发明公开

EP1168308A2 Magnetic recording medium and magnetic recording apparatus using the same 审中-公开
标题翻译：磁记录介质和使用其的磁记录装置
公开(公告)号：EP1168308A2
公开(公告)日：2002-01-02
申请号：EP01304912.7
申请日：2001-06-05
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Sakakima, Hiroshi , Satomi, Mitsuo , Sugita, Yasunari , Adachi, Hideaki , Kawawake, Yasuhiro , Iijima, Kenji
IPC分类号： G11B5/66 , G11B5/00 , G11B5/82
CPC分类号： G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/001 , Y10S428/90 , Y10T428/115 , Y10T428/12465
摘要： A magnetic recording medium includes a magnetic film 1 for signal recording and a film 2 containing M 2 O y as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8
摘要翻译：磁记录介质包括用于信号记录的磁性膜1和包含M 2 O y作为主要成分的膜2，该膜2与磁性膜磁性交换耦合以增加磁性膜的有效V和Ku并抑制热波动。这里，M是选自Fe，Co，Ni，碱土金属元素，Y，镧系元素和Bi中的至少一种元素，并且包括选自Fe，Co和Ni中的至少一种作为必需元素，并且y是满足2.8 < y <3.2。

4. 发明授权

EP0300499B2 Composite superconductor layer 失效
标题翻译：的复合超导层
公开(公告)号：EP0300499B2
公开(公告)日：1998-08-19
申请号：EP88111867.3
申请日：1988-07-22
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Hatta, Shinichiro , Higashino, Hidetaka , Hirochi, Kumiko , Adachi, Hideaki
IPC分类号： H01L39/24 , H01L39/08
CPC分类号： H01L39/2435 , H01L39/2458 , H01L39/2461 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T428/265 , Y10T428/31678

5. 发明授权

EP0517148B1 Method of making a thin film insulating layer with Bi-W-Oxygen 失效
标题翻译：一种用于制造具有双W-氧的薄膜绝缘层的方法
公开(公告)号：EP0517148B1
公开(公告)日：1996-03-20
申请号：EP92109241.7
申请日：1992-06-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Ichikawa, Yo , Setsune, Kentaro , Adachi, Hideaki
IPC分类号： H01B12/00 , H01L39/24 , H01L39/12
CPC分类号： H01L39/2435 , C23C14/0021 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/128
摘要： Bi-Ti-O or Bi-W-O thin film of stable crystal phase is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A layered structure of Bi-Sr-Ca-Cu-O thin films and Bi-Ti-O or Bi-W-O thin films is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A stable superconductor thin film of high superconducting transition temperature is manufactured reproducibly by layering alternately a layered oxide superconductor thin film of Tl-Ba-Ca-Cu-O system and a Bi-W-O insulator thin film.

6. 发明公开

EP0517148A1 Method of making a thin film insulating layer with Bi-W-Oxygen 失效
标题翻译：薄膜超导体及其制造方法。
公开(公告)号：EP0517148A1
公开(公告)日：1992-12-09
申请号：EP92109241.7
申请日：1992-06-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Ichikawa, Yo , Setsune, Kentaro , Adachi, Hideaki
IPC分类号： H01B12/00 , H01L39/24 , H01L39/12
CPC分类号： H01L39/2435 , C23C14/0021 , C23C14/087 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/128
摘要： Bi-Ti-O or Bi-W-O thin film of stable crystal phase is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen. A layered structure of Bi-Sr-Ca-Cu-O thin films and Bi-Ti-O or Bi-W-O thin films is manufactured by forming a Bi-Ti-O of Bi-W-O thin film periodically in an environment including activated oxygen.
A stable superconductor thin film of high superconducting transition temperature is manufactured reproducibly by layering alternately a layered oxide superconductor thin film of Tl-Ba-Ca-Cu-O system and a Bi-W-O insulator thin film.

7. 发明公开

EP0366949A1 Josephson devices and process for manufacturing the same 失效
标题翻译：约瑟夫森Einrichtungen和Verfahren祖德伦Herstellung。
公开(公告)号：EP0366949A1
公开(公告)日：1990-05-09
申请号：EP89118259.4
申请日：1989-10-02
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Higashino, Hidetaka , Mizuno, Koichi , Adachi, Hideaki , Setsune, Kentaro , Enokihara, Akira , Hatta, Shinichiro , Wasa, Kiyotaka , Kohiki, Shigemi , Matsuchima, Tomoaki
IPC分类号： H01L39/24 , H01L39/22
CPC分类号： H01L39/2496 , Y10S505/702 , Y10S505/873 , Y10S505/874
摘要： A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.
摘要翻译：约瑟夫逊装置，包括通过在衬底上形成包括多个Cu-O层的第一层状氧化物超导体薄膜，其上的阻挡层和阻挡层上的第二层状氧化物超导体薄膜而形成的结。根据本发明的约瑟夫逊装置通过在基板上形成第一层状氧化物超导体薄膜来制造，在相同的真空室中形成阻挡层，限定图案到所述阻挡层和所述第一层状氧化物超导薄层膜，在所述阻挡层上形成层间绝缘膜，去除作为结的区域中的所述层间绝缘膜，进行暴露于氧等离子体，形成第二层状氧化物超导体薄膜，与第二层状氧化物超导体薄膜的一部分接触所述阻挡层并且限定到所述第二层状氧化物超导体薄膜的图案。

8. 发明公开

EP1191344A3 Magnetoresistive element and magnetoresistive device using the same 审中-公开
标题翻译：磁阻元件以及这些磁 - 使用配置
公开(公告)号：EP1191344A3
公开(公告)日：2004-07-07
申请号：EP01308169.0
申请日：2001-09-26
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Adachi, Hideaki , Hiramoto, Masayoshi , Iijima, Kenji , Sakakima, Hiroshi
IPC分类号： G01R33/09
CPC分类号： H01L43/10 , B82Y25/00 , G01R33/093 , H01F10/324
摘要： A magnetoresistive element with an improved magnetoresistive effect achieved by interposing a titanium nitride layer between a substrate and a spinel-type magnetic substance is provided. The magnetoresistive element comprises a substrate (1) and a multilayer film formed on the substrate, and the multilayer film includes a first magnetic layer (3), a nonmagnetic layer (4) formed on the first magnetic layer and a second magnetic layer (5) formed on this nonmagnetic layer. An electric current is supplied in a direction perpendicular to a film surface of the multilayer film, and a change in electrical resistance is detected by the electric current based on a change in a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer. The first magnetic layer (3) has a spinel crystal structure, and the multilayer film further includes a titanium nitride layer (2) interposed between the substrate (1) and the first magnetic layer (3).

9. 发明公开

EP1162672A2 Magnetoresistive element and magnetic memory element and magnetic head using the same 审中-公开
标题翻译：磁阻元件，磁存储装置和磁头具有这样的元件
公开(公告)号：EP1162672A2
公开(公告)日：2001-12-12
申请号：EP01304546.3
申请日：2001-05-23
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Odagawa, Akihiro , Adachi, Hideaki , Hiramoto, Masayoshi , Matukawa, Nozomu , Sakakima, Hiroshi
IPC分类号： H01L43/08
CPC分类号： H01L27/222 , B82Y10/00 , H01L43/10 , Y10S428/90 , Y10T428/1107
摘要： The present invention provides a magnetoresistive element which includes a layered-perovskite oxide having a composition expressed by a formula L 2 (A 1-z R z A n-1 M n O 3n+3+x and including a (L-O) 2 layer in its crystalline structure, and a pair of ferromagnetic bodies formed in contact with the layer perovskite oxide so as to sandwich the oxide, where A represents at least one selected from the group of Ca, Sr, and Ba; L represents at least one selected from the group of Bi, Tl, and Pb; M represents at least one selected from the group of Ti, V, Cu, Ru, Ni, Mn, Co, Fe, and Cr; R represents a rare earth element; n is 1, 2, or 3; and x and z are numerical values satisfying -1≤x≤1, and 0≤z

10. 发明公开

EP0818831A3 Superconducting tunnel junction element and superconducting device 失效
标题翻译：一种超导隧道结元件，和超导设备
公开(公告)号：EP0818831A3
公开(公告)日：1998-09-09
申请号：EP97111415.2
申请日：1997-07-05
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Adachi, Hideaki , Sakai, Masahiro , Odagawa, Akihiro , Setsune, Kentaro
IPC分类号： H01L39/22
CPC分类号： H01L39/225
摘要： This invention provides a superconducting tunnel junction element showing satisfactory Josephson effect. The element includes a Bi-based layered compound such as Bi 2 Sr 2 (Ca 0.6 Y 0.4 )Cu 2 O 8 , Bi 2 Sr 2 Cu 2 O 6 and Bi 2 Sr 2 CaCu 2 O 8 as the barrier layer (13) between the superconducting oxide electrodes (11,12). The structural matching of the superconducting oxide with the Bi-based compound is supposed to be good. Some kinds of Cu-based superconducting oxides such as YSr 2 Cu 2.7 Re 0.3 O 7 , Sr 2 CaCu 2 O 6 and (La 0.9 Sr 0.1 ) 2 CuO 4 are used for the electrodes to obtain a Josephson element which can work at a high temperature. The superconducting device comprising the element has various uses such as magnetic detecting use, communicating use and computing use.

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