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1. 发明专利

JPH03240568A PRODUCTION OF THERMAL HEAD 失效
公开(公告)号：JPH03240568A
公开(公告)日：1991-10-25
申请号：JP3863990
申请日：1990-02-20
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SAKAGUCHI SEIICHIRO , KORECHIKA AKIHIRO , KURAMASU KEIZABURO , HIRAO TAKASHI , KITAGAWA MASATOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To prevent the dielectric breakdown caused by static electricity and improve heat resistance by a method wherein a wear-resistant protective film has a two-layer construction wherein an upper layer is a SiBON wear-resistant protective film and a lower layer is either a SiN wear-resistant protective film or a SiON wear-resistant protective film. CONSTITUTION:A SiN wear-resistant protective film 4a mainly composed of silicone and nitrogen is formed by a plasma CVD method using SiH4 and N2 as material gas. Thereon, a SiBON wear-resistant protective film 4b mainly composed of silicon, boron, oxygen, and nitrogen is formed similarly by a plasma CVD method using SiH4, N2O, N2, and B2H6 as material gas. In this manner, the SiBON wear-resistant protective film 4b can lower a resistivity while maintaining a hardness. Therefore, it is suitably used as an upper wear- resistant protective film layer abutting against recording paper in view of resistance to wear and static electricity. However, if the SiBON wear-resistant protective film 4b is directly mounted on a heating resistor 2 and an electrode 3, adhesion properties are deteriorated. Thus, by interposing a good-adhesion SiN wear-resistant protective layer 4a richly containing Si, the protective film 4a forms a slicide at the interface of the electrode 3 to improve adhesion.

2. 发明专利

JPH02112958A THIN FILM TYPE THERMAL HEAD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02112958A
公开(公告)日：1990-04-25
申请号：JP26636988
申请日：1988-10-21
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KORECHIKA AKIHIRO , KURAMASU KEIZABURO , SAKAGUCHI SEIICHIRO , HIRAO TAKASHI , KITAGAWA MASATOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To easily obtain a thin film type thermal head having high reliability by forming a two layer structure of a lower layer made of silicon, oxide, nitrogen and an upper layer made of silicon, oxygen, nitrogen and carbon in such a manner that both the layers are formed by a plasma CVD method. CONSTITUTION:After a heat generating resistor 2, a conductor layer 3 are formed on an insulating substrate 1, a wear resistant protective layer (made of a 2-layer structure of a lower layer 4 made of silicon, oxygen and nitrogen and an upper layer 5 made of silicon, oxygen, nitrogen and carbon by a plasma CVD method. Regarding heat resistance, hydrogen concentration in the film is increased from the layer 4 the layer 5 so that the heat resistance decreases to the layer 5, but since the surface temperature of the upper layer of the protective film is considerably lower than that of a heat generating resistor, there is no practical problem. On the other hand, as to high hardness, since the layer 5 increases, as apparent, a bond which contributes to the high hardness such as Si-C, Si-N, etc., its substantial hardness is increased to provide a thin film type thermal head having high reliability.

3. 发明专利

JPH09102726A VIBRATOR 失效
公开(公告)号：JPH09102726A
公开(公告)日：1997-04-15
申请号：JP25977195
申请日：1995-10-06
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SAKAGUCHI SEIICHIRO , NAKATANI MASAYA , HIGASHIYA HIDEKI , FURUKAWA MITSUHIRO
IPC分类号： H03H9/02 , H03H3/02 , H03H9/10 , H03H9/19
摘要： PROBLEM TO BE SOLVED: To improve airtightness at a through-hole part by forming a sealing film on a conductor stored in the through-hole of a cover by a specific method. SOLUTION: A cover 3 has a conical through-hole 17 having a small diameter part at the side of a diaphragm 1, and a conductor 18 is formed on the inner surface of the through-hole 17. Then a sealing film 22 is formed by a plasma CVD (chemical vapor deposition) method in the through-hole 17 to cover the upper small diameter part and the conductor 18 of the through-hole 17. The film 22 formed by the plasma CVD method can enter the through-hole 17 more smoothly for its stuck particles and also constructs a sealing member with the conductor 18. Thus high airtightness is secured for the through-hole 17. It is desirable to use chromium or titanium to a base to form copper and then to form chromium or titanium for the conductor 18 and to use SiON for the film 22 respectively.

4. 发明专利

JPH021342A THIN THERMAL HEAD AND ITS MANUFACTURE 失效
公开(公告)号：JPH021342A
公开(公告)日：1990-01-05
申请号：JP14211488
申请日：1988-06-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KORECHIKA AKIHIRO , KURAMASU KEIZABURO , SAKAGUCHI SEIICHIRO , HIRAO TAKASHI , KITAGAWA MASATOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To increase the heat resistance and hardness of abrasion-resistant protection film by making the ratio of the N2 flow and SiH4 flow of feedstock gas 10 or more to 60 or less and forming the protection film which is made of silicon oxynitride film using plasma CVD technique. CONSTITUTION:Abrasion-resistant protection film is applied on a number of rows of thermal resistors provided on an insulation substrate, and thereby a thin thermal head is made. At that time, this abrasion-resistant protection film consists of silicon oxynitride film which is formed by making the ratio of the N2 flow and SiH4 flow of SiH4, N2, N2O as feedstock gas at least, 10 or more to 60 or less and using plasma CVD technique. Subsequently, the abrasion and heat resistance of this protection film can be increased.

5. 发明专利

JPH09102725A VIBRATOR 失效
公开(公告)号：JPH09102725A
公开(公告)日：1997-04-15
申请号：JP25844995
申请日：1995-10-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SAKAGUCHI SEIICHIRO
IPC分类号： H03H9/02 , H03H3/02 , H03H9/10 , H03H9/19
摘要： PROBLEM TO BE SOLVED: To improve airtightness at a through-hole part by putting a metallic piece into the through-hole of a cover to form a metallic film by laser fusion. SOLUTION: A cover 3 has a conical through-hole 17 having a small diameter at the side of a diaphragm 1, and a conductor 18 is formed on the inner surface of the through-hole 17. Then a metallic piece is put into the through-hole 17 and irradiated by a laser within a vacuum tank. Thus the metallic piece is fused and a metallic film 22 is formed. In such a way, the metallic piece has fluidity when it is fused by the laser. As a result, the metallic piece can enter the through-hole 17 more smoothly and also can cover satisfactorily the upper small diameter part of the through-hole 17. Thus a sealing member is obtained by the conductor 18 and the film 22 to secure high airtightness. It is desirable to use chromium or titanium for the base of the conductor 18 and also to use indium, tin or zinc or an alloy of them to the film 22.

6. 发明专利

JPH0918280A OSCILLATOR AND ITS PRODUCTION 失效
公开(公告)号：JPH0918280A
公开(公告)日：1997-01-17
申请号：JP16847895
申请日：1995-07-04
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIGASHIYA HIDEKI , KURAMASU KEIZABURO , FURUKAWA MITSUHIRO , SAKAGUCHI SEIICHIRO
IPC分类号： H03H9/19 , H03H3/02
摘要： PROBLEM TO BE SOLVED: To prevent the surface oxidation in the heat treatment by providing a TiN layer under an Au layer to constitute an electrode for excitation. SOLUTION: Electrodes 8 and 9 for excitation are constituted in laminated film structures of Au layers 8a and 9a and TiN layers 8b and 9b. Specific resistances of electrodes 8 and 9 are reduced by annealing to prevent the degradation of the Ci value. Nitrogen is introduced during vapor-deposition of Ti and the Ti rate and the degree of vacuum are controlled to easily obtain TiN layers 8b and 9b provided as contact layers to an oscillation part 7. TiN layers 8b and 9b are provided in this manner to improve the degree of contact with upper Au layers 8a and 9a, and electrodes 8 and 9 superior in environmental resistance are formed. Oxidation of surfaces of electrodes for excitation in annealing is suppressed because TiN is more hardly diffused in Au than Cr, and as the result, projections are not generated on surfaces of electrodes for excitation after heat treatment, and the degradation in oscillation characteristic or the oscillator is prevented.

7. 发明专利

JPH03258560A THIN MEMBRANE TYPE THERMAL HEAD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03258560A
公开(公告)日：1991-11-18
申请号：JP5826890
申请日：1990-03-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KORECHIKA AKIHIRO , SAKAGUCHI SEIICHIRO , KURAMASU KEIZABURO , HIRAO TAKASHI , KITAGAWA MASATOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To realize the manufacture of a thermal head suitable for thermal transfer recording and highly reliable by providing on the rows of heating elements a wear resisting protective membrane consisting mainly of Si, N and B, i.e. the compounds meeting the preset requirements of the atomic percentages. CONSTITUTION:A number of the rows of heating element are provided on an insulating base plate and a wear resisting protective membrane is provided on the rows of the heating elements. The wear resisting protective membrane consists mainly of Si, N and B and such compounds meet the requirements of 0.6 10 (in terms of atomic percentage). Such constitution provides a sufficient conductivity to avoid electrostatic destruction and also sufficient heat resistance, adhesiveness and membrane hardness and, by the use of this membrane for the protection of a thermal head from wear, the manufacture of the thermal head suitable for thermal transfer recording and highly reliable can be realized.

8. 发明专利

JPH03199058A THERMAL HEAD AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03199058A
公开(公告)日：1991-08-30
申请号：JP34263289
申请日：1989-12-28
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SAKAGUCHI SEIICHIRO , KURAMASU KEIZABURO , KORECHIKA AKIHIRO , HIRAO TAKASHI , KITAGAWA MASATOSHI
IPC分类号： B41J2/335
摘要： PURPOSE:To obtain a thermal head having a wear-resistant protective film causing no dielectric breakdown by using SiBxNy film as a wear-resistant protective film material. CONSTITUTION:Exothermic resistor 2 group arranged in a line and a pair of facing electrode 3 group are formed in the main scanning direction on an insulating substrate 1. After that, when a wear-resistant protective film 4 is formed, SiH4 and N2 are used as raw material gas, B2H6 gas is used as supply source for B, and SiBxNy film is accumulated by plasma CVD method. In this manner, it is possible to prevent a dielectric breakdown due to static electricity generated between thermal transfer sheet and thermal head and to make the performance of the thermal head higher.

9. 发明专利

JPH03189169A THIN FILM TYPE THERMAL HEAD AND ITS MANUFACTURE 失效
公开(公告)号：JPH03189169A
公开(公告)日：1991-08-19
申请号：JP33073189
申请日：1989-12-19
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SEKINO HARUHIKO , SAKAGUCHI SEIICHIRO , KORECHIKA AKIHIRO , KITAGAWA MASATOSHI , HIRAO TAKASHI , YAMADA YUICHIRO
IPC分类号： B41J2/335
摘要： PURPOSE:To obtain a thin film type thermal head which does not generate dielectric breakdown by a method wherein an abrasion resistant protective film having, as principal components, silicon, titanium, and nitrogen resistivity of which is less compared with that of SiON as a material for an abrasion resistant protective film is formed. CONSTITUTION:A heating element 2 and a pair of counter electrodes 3 are successively laminated on an insulating substrate 1 wherein a glass glazed layer is provided on alumina. Thereafter, a pattern is formed thereon. A SiTiN film is formed as an abrasion resistant protective film 4 thereto. The SiTiN film is formed by using, for example, SiH4, TiCl4, N2 as raw material gas and by using a plasma CVD method. Thus, electric conductivity is given to the film by existence of a product showing metallic and semiconductor like electric conduction and therefore, since generated electrostatic charge is liberated, electrostatic breakdown is prevented from occurring.

10. 发明专利

JPH02218130A SILICON CARBIDE OXYNITRIDE THIN FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02218130A
公开(公告)日：1990-08-30
申请号：JP3857289
申请日：1989-02-17
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KITAGAWA MASATOSHI , HIRAO TAKASHI , KORECHIKA AKIHIRO , SAKAGUCHI SEIICHIRO , KURAMASU KEIZABURO
IPC分类号： H01L21/314 , H01L21/316
摘要： PURPOSE:To obtain an insulating thin film characterized by high perforance by forming the thin film by using the mixed gas of hydrogenized silicon gas such as monosilane, nitrogen gas and carbon monoxide gas or the mixed gas of silicon hydride, nitrogen gas and carbon dioxide gas. CONSTITUTION:A microwave is introduced into a plasma generating chamber from a microwave oscillator 13 through a waveguide 12. A magnetic field is applied in the plasma generating chamber with an electromagnet 15. The mixed gas of SiH4, CO2 and N2 or the mixed gas of SiH4, CO and N2 is introduced through a gas introducing port 16 as a raw material gas. For example, the pressure in a reaction container is kept at 1.0mTorr. When plasma 17 having a high degree of dissociation is generated, the plasma 17 reaches a substrate holder 19 through a plasma drawing window 18. Silicon carbide oxynitride is formed on a substrate 20. Thus, an insulating thin film characterized by fine structure and less inner strain can be formed.

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