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1. 发明公开

EP0667532A3 Thin film sensor element and method of manufacturing the same. 失效
标题翻译： Dünnfilmm传感器元件和方法，用于其生产。
公开(公告)号：EP0667532A3
公开(公告)日：1998-07-22
申请号：EP95100861
申请日：1995-01-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TORII HIDEO , KAMADA TAKESHI , HAYASHI SHIGENORI , TAKAYAMA RYOICHI , HIRAO TAKASHI , HATTORI MASUMI
IPC分类号： G01P15/08 , G01P15/09 , H01L41/29 , H01L37/00
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element.
On the surface of a flat plate KBr substrate 1, a rock-salt crystal structure oxide of a conductive NiO 12 is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to 〈100〉 direction against the substrate surface. By means of a sputtering method, a PZT film 4 is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film 15 is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate 7 having an opening part with an adhesive 20. After a connection electrode 19 is connected, the whole structure is washed with water, thereby removing the KBr substrate 1.

2. 发明专利

DE69422229T2 未知
公开(公告)号：DE69422229T2
公开(公告)日：2000-05-11
申请号：DE69422229
申请日：1994-05-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： KAWASAKI TETUO , KORETIKA TETUHIRO , KITABATAKE MAKOTO , HIRAO TAKASHI
IPC分类号： H01L21/20 , H01L43/06 , H01L43/08 , H01L43/14
摘要： A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms , of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.

3. 发明专利

DE69532174D1 未知
公开(公告)号：DE69532174D1
公开(公告)日：2004-01-08
申请号：DE69532174
申请日：1995-01-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TORII HIDEO , KAMADA TAKESHI , HAYASHI SHIGENORI , TAKAYAMA RYOICHI , HIRAO TAKASHI , HATTORI MASUMI
IPC分类号： G01P15/08 , G01P15/09 , H01L41/29 , H01L37/00 , H01L41/22 , G01J5/34
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate 1, a rock-salt crystal structure oxide of a conductive NiO 12 is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to &Lang&100&Rang& direction against the substrate surface. By means of a sputtering method, a PZT film 4 is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film 15 is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate 7 having an opening part with an adhesive 20. After a connection electrode 19 is connected, the whole structure is washed with water, thereby removing the KBr substrate 1.

4. 发明专利

DE69015010T2 未知
公开(公告)号：DE69015010T2
公开(公告)日：1995-07-20
申请号：DE69015010
申请日：1990-06-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： DEGUCHI MASAHIRO , HIRAO TAKASHI
IPC分类号： C01B31/06 , C23C14/48 , C23C16/02 , C30B25/02 , C30B25/18 , C30B29/04 , H01L21/205

5. 发明专利

GB2108755A Thin film devices having diffused interconnections 未知
公开(公告)号：GB2108755A
公开(公告)日：1983-05-18
申请号：GB8226037
申请日：1982-09-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIHARA SHINICHIRO , HIRAO TAKASHI , MORI KOSHIRO , ONO MASAHARU , KITAGAWA MASATOSHI
IPC分类号： H01L23/535 , H01L27/142 , H01L31/0224 , H01L31/20 , H01L21/22
摘要： A thin film device, such as an amorphous thin film solar battery, is made with high integration by using metal-diffused regions (24) in the thin film (23) as connection regions across the thickness of the thin film (23). The metal-diffused regions (24) connect transparent stripe-shaped electrodes (21), disposed between a glass substrate (20) and an amorphous silicon thin film (23), to stripe-shaped metal electrodes (25) on the thin film (23), thus forming a solar battery comprising series-connected cells.

6. 发明专利

DE69412769T2 未知
公开(公告)号：DE69412769T2
公开(公告)日：1999-01-14
申请号：DE69412769
申请日：1994-12-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HAYASHI SHIGENORI , KAMADA TAKESHI , TORII HIDEO , HIRAO TAKASHI
IPC分类号： G01D5/241 , G01L9/00 , G01P15/125 , G01D5/24
摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material (2) such as KBr into a through-hole, forming a conductive thin film (4) on the surface, and dissolving and removing the alkali halide material (2). An insulating plate (1) disposed with a through-hole in the thickness direction is filled with a molten alkali halide material (2) such as KBr. After forming a conductive thin film (4) on the surface of the alkali halide material (2) filled into the through-hole and the vicinity thereof, the alkali halide material (2) is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film (4). A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film (4) is detected as a capacitance change between the conductive thin film (4) and the electrode layer (6).

7. 发明专利

DE3853179D1 未知
公开(公告)号：DE3853179D1
公开(公告)日：1995-04-06
申请号：DE3853179
申请日：1988-07-27
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SETSUNE KENTARO , KAMADA TAKESHI , ADACHI HIDEAKI , WASA KIYOTAKA , HIRAO TAKASHI , HIGASHINO HIDETAKA , YAMAZAKI OSAMU
IPC分类号： H01L39/24 , H01L39/12 , C30B23/02 , C30B29/22
摘要： A superconductive structure comprising a crystalline coating (12) applied to a substrate (11) and a crystalline superconducting film (13) epitaxially deposited on said crystalline coating (12). Especially CaF2 crystals and ZrO2 crystals with a CaF2 crystal structure show good lattice matching with semiconductor substrate materials such as Si, GaAs, etc., as well as with superconducting materials comprising copper oxide. The crystalline coating (12) may be made of a material having a perovskite structure, such as BaTiO3, when the superconducting coating (13) is made of a material having a perovskite structure.

8. 发明专利

GB2108755B THIN FILM DEVICES HAVING DIFFUSED INTERCONNECTIONS 未知
公开(公告)号：GB2108755B
公开(公告)日：1985-07-10
申请号：GB8226037
申请日：1982-09-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： ISHIHARA SHINICHIRO , HIRAO TAKASHI , MORI KOSHIRO , ONO MASAHARU , KITAGAWA MASATOSHI
IPC分类号： H01L23/535 , H01L27/142 , H01L31/0224 , H01L31/20 , H01L21/22

9. 发明专利

DE69534214T2 未知
公开(公告)号：DE69534214T2
公开(公告)日：2005-10-13
申请号：DE69534214
申请日：1995-10-31
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHIOKAWA AKIRA , YASUI HIDEAKI , KOTERA KOICHI , MUKAI YUUJI , TANAKA HIROYOSHI , HIRAO TAKASHI
IPC分类号： C23C14/54 , G01N21/31
摘要： A beam (9) emitted from a light source (1) including the characteristic wavelength of flown particles in a film forming system (6) is interrupted by a beam chopper (18) in a predetermined cycle, and is then divided into a probing beam (14) and a reference beam (15) by a beam divider (17). The probing beam (14) passes through a particle flight area (13) and is then injected into a photo detector (3a) through an optical filter (2a), and a probing signal (23) is outputted. A reference signal is obtained from the reference beam in the same manner. A data processor (20) detects the phase and level of both signals, so that an absorbance, i.e., a film forming rate for the flown particles is estimated. The film forming rate is integrated with time so that a film thickness is estimated. Thus, the range of the applicable film forming rate is wide. In addition, it is possible to perform continuous monitoring with high precision also in an atmosphere where a large amount of light having the same wavelength as the characteristic wavelength of the flown particles is generated, as in sputtering systems.

10. 发明专利

DE69532174T2 未知
公开(公告)号：DE69532174T2
公开(公告)日：2004-04-15
申请号：DE69532174
申请日：1995-01-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： TORII HIDEO , KAMADA TAKESHI , HAYASHI SHIGENORI , TAKAYAMA RYOICHI , HIRAO TAKASHI , HATTORI MASUMI
IPC分类号： G01P15/08 , G01P15/09 , H01L41/29 , H01L37/00 , H01L41/22 , G01J5/34
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate 1, a rock-salt crystal structure oxide of a conductive NiO 12 is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to &Lang&100&Rang& direction against the substrate surface. By means of a sputtering method, a PZT film 4 is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film 15 is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate 7 having an opening part with an adhesive 20. After a connection electrode 19 is connected, the whole structure is washed with water, thereby removing the KBr substrate 1.

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