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1. 发明授权

US06932864B2 Method and apparatus for measuring the position of a phase interface during crystal growth 失效
标题翻译：在晶体生长期间测量相界面的位置的方法和装置
公开(公告)号：US06932864B2
公开(公告)日：2005-08-23
申请号：US10128856
申请日：2002-04-23
申请人： Lutz Parthier , Frank-Thomas Lentes , Gunther Wehrhan , Burkhard Speit , Hans-Joerg Axmann
发明人： Lutz Parthier , Frank-Thomas Lentes , Gunther Wehrhan , Burkhard Speit , Hans-Joerg Axmann
IPC分类号： G01B11/00 , C30B11/00 , C30B29/12 , C30B15/20 , C30B19/10
CPC分类号： C30B11/006
摘要： In the method and apparatus for measuring the position of the phase interface during growth of a crystal from a melt in a crystal growth container according to the VGF method an incident optical signal is propagated to the phase interface between the melt and the crystal through a window (16) in the container (10) and a received optical signal reflected from the phase interface (14) is measured to determine the position of the phase interface. The position of the phase interface is established from the reflected signal by triangulation with a confocal optic system, by interferometric balancing or by transit time of the optical signal. The window (16) is preferably mounted in a preferably tilted orientation at the end of a tube (15), which is immersed in the melt (12).
摘要翻译：在根据VGF方法在晶体生长容器中从熔体生长晶体期间测量相界面的位置的方法和装置中，入射光信号通过窗口传播到熔体和晶体之间的相界面（10）中的（16）并且从相位界面（14）反射的接收的光信号被测量以确定相位界面的位置。通过用共焦光学系统进行三角测量，通过干涉平衡或光信号的传播时间，从反射信号建立相位接口的位置。窗口（16）优选地在浸在熔体（12）中的管（15）的端部处以优选倾斜的方向安装。

2. 发明授权

US06364946B2 Methods for growing large-volume single crystals from calcium fluoride and their uses 失效
标题翻译：从氟化钙生长大容量单晶的方法及其用途
公开(公告)号：US06364946B2
公开(公告)日：2002-04-02
申请号：US09798631
申请日：2001-03-02
申请人： Joerg Staeblein , Andreas Weisleder , Gunther Wehrhan , Burkhard Speit , Lutz Parthier
发明人： Joerg Staeblein , Andreas Weisleder , Gunther Wehrhan , Burkhard Speit , Lutz Parthier
IPC分类号： C30B1104
CPC分类号： C30B33/00 , C30B29/12 , Y10T117/10
摘要： The method for making a uniform, large-size single crystal of calcium fluoride includes placing a single precursor crystal of calcium fluoride in a tempering vessel provided with a cover; introducing calcium fluoride powder into the tempering vessel and subsequently heating the single precursor crystal, preferably in intimate contact with the calcium fluoride powder, in the tempering vessel together with the calcium fluoride powder for two or more hours at temperatures above 1150° C. to temper the precursor crystal and thus form the uniform, large-scale single crystal of calcium fluoride. The uniform large-sized single crystals of calcium fluoride can be used to make improved lens, prism, light-conducting rod, optical window or other optical component for DUV photolithography, steppers, excimer lasers, wafers, computer chips and electronic devices containing the wafers and chips.
摘要翻译：制造均匀，大尺寸的氟化钙单晶的方法包括将氟化钙的单一前体晶体放置在设置有盖的回火容器中; 将氟化钙粉末引入回火容器中，随后在回火容器中与氟化钙粉末一起加热单一前体晶体，优选与氟化钙粉末紧密接触，与氟化钙粉末一起在高于1150℃的温度下搅拌两个或更多小时以回火前体晶体，从而形成均匀，大规模的氟化钙单晶。均匀的大尺寸单晶氟化钙可用于制造用于DUV光刻，步进器，准分子激光器，晶片，计算机芯片和包含晶片的电子器件的改进的透镜，棱镜，导光杆，光学窗口或其他光学部件与芯片。

3. 发明授权

US06969502B2 Method and device for growing large-volume oriented monocrystals 失效
标题翻译：用于生长大容量定向单晶的方法和装置
公开(公告)号：US06969502B2
公开(公告)日：2005-11-29
申请号：US10220115
申请日：2001-03-02
申请人： Gunther Wehrhan , Peter Elzner , Ewald Moersen , Richard Schatter , Hans-Joerg Axmann , Thorsten Reichardt
发明人： Gunther Wehrhan , Peter Elzner , Ewald Moersen , Richard Schatter , Hans-Joerg Axmann , Thorsten Reichardt
IPC分类号： G03F7/20 , C30B11/00 , C30B29/12 , H01L21/027 , C01B9/00 , C30B13/16
CPC分类号： C30B11/003 , C30B11/00 , C30B29/12 , Y10S117/90 , Y10T117/10
摘要： In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature at least to the crystallization point. A solid/liquid phase boundary is formed between the monocrystal and the melt. The monocrystal grows towards the melt surface in a direction that is perpendicular to the phase boundary. A vertical axial temperature gradient is produced and maintained between the bottom of the melting vessel and its upper opening and heat inflow and/or heat outflow through side walls of the melting vessel is prevented, so that the solid/liquid phase boundary has a curvature radius of at least one meter. A crystal-growing device for performing this process is also described.
摘要翻译：在生长大容量单晶的方法中，将晶体原料在具有加热元件的熔融容器中加热到高于其熔点的温度，直到形成熔体。然后通过将温度至少降低至结晶点，在熔融容器的底部形成单晶。在单晶和熔体之间形成固相/液相边界。单晶在垂直于相边界的方向上朝着熔体表面生长。在熔化槽的底部与其上部开口之间产生垂直的轴向温度梯度，并且防止了通过熔融容器的侧壁的热流入和/或热流出，使得固/液相边界具有曲率半径至少一米。还描述了用于执行该处理的晶体生长装置。

4. 发明授权

US07303627B2 Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby 有权
$Method for making low-stress large-volume not-(111)-oriented crystals with reduced stress birefringence and more uniform refractive index and crystals made thereby$
标题翻译：制造具有降低的应力双折射和更均匀折射率的低应力大体积非（111）取向晶体的方法和由此制成的晶体
公开(公告)号：US07303627B2
公开(公告)日：2007-12-04
申请号：US11062711
申请日：2005-02-22
申请人： Lutz Parthier , Joerg Staeblein , Gunther Wehrhan , Christian Kusch
发明人： Lutz Parthier , Joerg Staeblein , Gunther Wehrhan , Christian Kusch
IPC分类号： C30B25/12
CPC分类号： G03F7/70958 , C30B29/12 , C30B33/00 , G02B5/3083
摘要： A method is described for making an especially not-(111)-oriented low-stress large-volume crystal having a glide plane with reduced stress birefringence and more uniform refractive index. The method includes growing and tempering the crystal while heating and/or cooling to form a temperature gradient in order to relax stresses arising along the glide plane. During the tempering the heating and/or cooling occurs by heat transfer in a heat transfer direction and the heat transfer direction or temperature gradient is oriented at an angle of from 5° to 90° to the glide plane. Crystals with a uniform refractive index with variations of less than 0.025×10−6 (RMS value) are produced by the method.
摘要翻译：描述了一种用于制造特别是不具有（111）取向的低应力大体积晶体的方法，其具有具有降低的应力双折射和更均匀折射率的滑动平面。该方法包括在加热和/或冷却时生长和回火晶体以形成温度梯度，以缓和沿着滑行平面的应力。在回火期间，通过在传热方向上的热传递发生加热和/或冷却，并且传热方向或温度梯度以与滑动平面成5°至90°的角度定向。通过该方法产生具有小于0.025×10 -6（RMS值）的变化的具有均匀折射率的晶体。

5. 发明申请

US20050178316A1 Method and apparatus for purification of crystal material and for making crystals therefrom and use of crystals obtained thereby 有权
公开(公告)号：US20050178316A1
公开(公告)日：2005-08-18
申请号：US11042286
申请日：2005-01-24
申请人： Joerg Kandler , Lutz Parthier , Thomas Kaufhold , Gunther Wehrhan , Clemens Kunisch
发明人： Joerg Kandler , Lutz Parthier , Thomas Kaufhold , Gunther Wehrhan , Clemens Kunisch
IPC分类号： C30B11/02 , C30B11/00 , C30B29/12 , C30B33/00 , G02B1/02 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B11/00 , C30B29/12 , C30B33/00 , G02B1/02 , Y10T117/1072 , Y10T117/108
摘要： The method for producing single crystals includes drying crystal raw material by removing water, reaction of impurities with a scavenger, preferably a metal halide, and homogenizing the melt. The method is performed with the raw material in a melt vessel with a variable-sized through-going opening, in which drying occurs at 100° C. to 600° C. for at least 20 hours with a geometric conductance value for the through-going opening of 2.00 to 30.00 mm2; the reacting occurs at 600° C. to 1200° C. for at least nine hours with a geometric conductance value of 0.0020 to 0.300 mm2 and the homogenizing occurs at above 1400° C. for at least six hours with a geometric conductance value of 0.25 to 1.1 mm2. Alternatively the geometric conductance value is the same during drying, reacting and homogenizing and takes a value between 0.25 and 1 mm2.

6. 发明申请

US20110076217A1 PROCESS FOR GROWING RARE EARTH ALUMINUM OR GALLIUM GARNET CRYSTALS FROM A FLUORIDE-CONTAINING MELT AND OPTICAL ELEMENTS AND SCINTILLATION MADE THEREFROM 审中-公开
标题翻译：从含氟化物熔体和光学元素生长稀土铝或镓玻璃晶体的方法及其制备
公开(公告)号：US20110076217A1
公开(公告)日：2011-03-31
申请号：US12889506
申请日：2010-09-24
申请人： Lutz Parthier , Tilo Aichele , Gunther Wehrhan , Christoph Seitz , Johann-Christoph Von Saldern
发明人： Lutz Parthier , Tilo Aichele , Gunther Wehrhan , Christoph Seitz , Johann-Christoph Von Saldern
IPC分类号： C30B15/00 , C30B11/00 , C01F17/00
CPC分类号： C30B29/28 , C30B11/00
摘要： The process for growing a rare earth aluminum or gallium garnet crystal from a melt includes melting an aluminum or gallium garnet of at least one rare earth, preferably Lu or Y, or a mixture of oxides of formula Me2O3, wherein Me represents the rare earth or aluminum or gallium. The melt also includes a fluoride anion acting as a counter ion for the rare earth and the aluminum or gallium. The components comprising the rare earth and aluminum or gallium are introduced in the melt so that the amounts of the rare earth and aluminum or gallium are defined by the formula: SE(3-x)X(5-y)O(12-2x-2y)F(x+y), wherein 0≦x≦0.2 and 0≦y≦0.2 and 0
摘要翻译：从熔体生长稀土铝或镓石榴石晶体的方法包括熔化至少一种稀土（优选Lu或Y）或式Me 2 O 3氧化物的混合物的铝或镓石榴石，其中Me表示稀土或铝或镓。该熔体还包括用作稀土和铝或镓的抗衡离子的氟化物阴离子。将包含稀土和铝或镓的组分引入熔体中，使得稀土和铝或镓的量由下式定义：SE（3-x）X（5-y）O（12-2x -2y）F（x + y），其中0＆nlE; x＆nlE; 0.2和0＆amp; nlE; y＆nlE; 0.2和0

7. 发明授权

US07679806B2 Method for making optical elements for microlithography, the lens systems obtained by the method and their uses 有权
标题翻译：用于制造用于微光刻的光学元件的方法，通过该方法获得的透镜系统及其用途
公开(公告)号：US07679806B2
公开(公告)日：2010-03-16
申请号：US11369306
申请日：2006-03-07
申请人： Gunther Wehrhan , Regina Martin , Lutz Parthier , Joerg Staeblein , Martin Letz , Jochen Alkemper , Konrad Knapp , Klaus Petermann
发明人： Gunther Wehrhan , Regina Martin , Lutz Parthier , Joerg Staeblein , Martin Letz , Jochen Alkemper , Konrad Knapp , Klaus Petermann
IPC分类号： G02F1/01 , G06K7/10 , F21V9/06
CPC分类号： C30B29/28 , C30B15/00 , G02B1/02 , G02B13/143 , G03F7/70341 , G03F7/70958
摘要： The optical elements for ultraviolet radiation, especially for microlithography, are made from cubic granet, cubic spinel, cubic perovskite and/or cubic M(II)- as well as M(IV)-oxides. The optical elements are made from suitable crystals of Y3Al5O12, Lu3Al5O12, Ca3Al2Si3O12, K2NaAlF6, K2NaScF6, K2LiAlF6 and/or Na3Al2Li3F12, (Mg, Zn)Al2O4, CaAl2O4, CaB2O4 and/or LiAl5O8, BaZrO3 and/or CaCeO3. A front lens used in immersion optics for microlithography at wavelengths under 200 nm is an example of a preferred optical element of the present invention.
摘要翻译：用于紫外线辐射的光学元件，特别是用于微光刻，由立方晶粒，立方尖晶石，立方钙钛矿和/或立方M（II）以及M（IV） - 氧化物制成。光学元件由合适的Y3Al5O12，Lu3Al5O12，Ca3Al2Si3O12，K2NaAlF6，K2NaScF6，K2LiAlF6和/或Na3Al2Li3F12，（Mg，Zn）Al2O4，CaAl2O4，CaB2O4和/或LiAl5O8，BaZrO3和/或CaCeO3的晶体制成。用于200nm以下波长的微光刻的浸没光学元件的前透镜是本发明的优选光学元件的一个例子。

8. 发明申请

US20070251443A1 METHOD FOR MAKING LOW-STRESS LARGE-VOLUME NOT-(111)-ORIENTED CRYSTALS WITH REDUCED STRESS BIREFRINGENCE AND MORE UNIFORM REFRACTIVE INDEX AND CRYSTALS MADE THEREBY 审中-公开
标题翻译：制造低应力大容量非（111）态晶体的方法，具有减少的应力双折射和更均匀的折射率和晶体。
公开(公告)号：US20070251443A1
公开(公告)日：2007-11-01
申请号：US11764257
申请日：2007-06-18
申请人： Lutz Parthier , Joerg Staeblein , Gunther Wehrhan , Christian Kusch
发明人： Lutz Parthier , Joerg Staeblein , Gunther Wehrhan , Christian Kusch
IPC分类号： C30B23/00
CPC分类号： G03F7/70958 , C30B29/12 , C30B33/00 , G02B5/3083
摘要： A method is described for making an especially not-(111)-oriented low-stress large-volume crystal having a glide plane with reduced stress birefringence and more uniform refractive index. The method includes growing and tempering the crystal while heating and/or cooling to form a temperature gradient in order to relax stresses arising along the glide plane. During the tempering the heating and/or cooling occurs by heat transfer in a heat transfer direction and the heat transfer direction or temperature gradient is oriented at an angle of from 50° to 900° to the glide plane. Crystals with a uniform refractive index with variations of less than 0.025×10−6 (RMS value) are produced by the method.
摘要翻译：描述了一种用于制造特别是不具有（111）取向的低应力大体积晶体的方法，其具有具有降低的应力双折射和更均匀折射率的滑动平面。该方法包括在加热和/或冷却时生长和回火晶体以形成温度梯度，以缓和沿着滑行平面的应力。在回火期间，通过在传热方向上传热而发生加热和/或冷却，并且传热方向或温度梯度与滑行平面成50°至900°的角度。通过该方法产生具有小于0.025×10 -6（RMS值）的变化的具有均匀折射率的晶体。

9. 发明申请

US20070056505A1 Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal 失效
标题翻译：通过从熔体中拉伸并使用所述晶体来制造高度均匀的低应力单晶的方法和装置
公开(公告)号：US20070056505A1
公开(公告)日：2007-03-15
申请号：US11519603
申请日：2006-09-11
申请人： Gunther Wehrhan , Lutz Parthier , Daniel Rytz , Klaus Dupre , Lothar Ackermann
发明人： Gunther Wehrhan , Lutz Parthier , Daniel Rytz , Klaus Dupre , Lothar Ackermann
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/14 , C30B29/22 , C30B29/28 , Y10T117/1004
摘要： The method provides a uniform low-stress single crystal in a predetermined crystal orientation. The method of making it includes immersing a single crystal held at a temperature under its melting point in a melt of crystal raw material and drawing it from the melt to grow the crystal. The crystal and/or melt are rotated relative to each other during the crystal growth. A planar phase boundary surface is maintained by detecting at least one characteristic surface temperature in an interior of a crucible containing the melt and controlling temperature fluctuations by increasing or decreasing the rotation speed when they occur. The single crystals obtained by this method have a diameter of at least 50 mm and no visible growth strips in a fishtail pattern when a 2-mm thick sample is observed between crossed polarizers. Optical elements suitable for DUV lithography can be made from these crystals.
摘要翻译：该方法提供了预定晶体取向的均匀的低应力单晶。其制造方法包括将保持在其熔点以下的温度的单晶浸渍在晶体原料的熔体中并从熔体中拉出以使晶体生长。晶体和/或熔体在晶体生长期间相对于彼此旋转。通过检测含有熔体的坩埚内部的至少一个特征表面温度并通过增加或减小其发生转速来控制温度波动来维持平面相界面。通过该方法获得的单晶在正交偏振器之间观察到2mm厚的样品时，具有至少50mm的直径，并且在鱼尾纹图案中没有可见的生长条。适用于DUV光刻的光学元件可以由这些晶体制成。

10. 发明申请

US20110130266A1 METHOD AND APPARATUS FOR MAKING A HIGHLY UNIFORM LOW-STRESS SINGLE CRYSTAL BY DRAWING FROM A MELT AND USES OF SAID CRYSTAL 审中-公开
标题翻译：用于制造高分子低应力单晶的方法和装置，由熔体和使用的水晶制成
公开(公告)号：US20110130266A1
公开(公告)日：2011-06-02
申请号：US12985500
申请日：2011-01-06
申请人： Gunther Wehrhan , Lutz Parthier , Daniel Rytz , Klaus Dupre , Lothar Ackermann
发明人： Gunther Wehrhan , Lutz Parthier , Daniel Rytz , Klaus Dupre , Lothar Ackermann
IPC分类号： C30B29/00
CPC分类号： C30B15/14 , C30B29/22 , C30B29/28 , Y10T117/1004
摘要： The method of making uniform low-stress crystals includes immersing a seed crystal held at a temperature under its melting point in a melt in a crucible and drawing it from the melt. The crystal and/or melt are rotated relative to each other and a planar phase boundary surface is maintained between them by detecting a surface temperature of the melt and/or crystal and controlling temperature fluctuations by increasing or decreasing the rotation speed. A low-stress crystal of formula: (A1-xDx)3Al5O12 wherein 0
摘要翻译：制造均匀的低应力晶体的方法包括将保持在其熔点下的温度的晶种浸入坩埚中的熔体中并将其从熔体中拉出。晶体和/或熔体相对于彼此旋转，并且通过检测熔体和/或晶体的表面温度并通过增加或减少转速来控制温度波动来保持它们之间的平面相界面。其中0

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