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    • 9. 发明专利
    • Adhesive used for manufacturing method of semiconductor device
    • 用于半导体器件制造方法的粘合剂
    • JP2013077855A
    • 2013-04-25
    • JP2013016952
    • 2013-01-31
    • Lintec Corpリンテック株式会社
    • YAMAZAKI OSAMUICHIKAWA ISAO
    • H01L21/52
    • PROBLEM TO BE SOLVED: To provide an adhesive capable of easily manufacturing a void-less semiconductor device, which does not rely on substrate design.SOLUTION: In the ase of manufacturing a semiconductor device which is manufactured by die-bonding a chip and a wiring substrate through an unsolidified adhesive, heating the wiring substrate to which the chip is die-bonded, and settling the unsolidified adhesive, an adhesive is used for the manufacturing method of the semiconductor device including a static pressurizing process in which, before the settling is completed, the wiring substrate to which the chip is die-bonded is static-pressurized and heated under such condition as an embedding index α of 75 Kor less as represented by a formula (1): α=[G/(P×T)]×10. (In the formula (1), P is pressure (Pa) wit respect to a normal pressure, and T is heating temperature (K).) The adhesive is characterized by having an elastic modulus G at 120°C of 30000 Pa or less.
    • 要解决的问题:提供一种能够容易地制造不依赖于基板设计的无空隙半导体器件的粘合剂。 解决方案:在制造通过未固化粘合剂将芯片和布线基板芯片焊接制造的半导体器件加热的同时,加热芯片被接合的布线基板并使未固化的粘合剂沉降, 使用粘合剂用于包括静电加压工艺的半导体器件的制造方法,其中在沉降完成之前,芯片被接合的布线基板被静态加压和加热,如嵌入指数 α由式(1)表示:α= [G /(P×T)]×10 1 6 。 (式(1)中,P是相对于常压的压力(Pa),T是加热温度(K))。粘合剂的特征在于在120℃下的弹性模量G为30000Pa以下 。 版权所有(C)2013,JPO&INPIT
    • 10. 发明专利
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • JP2009135309A
    • 2009-06-18
    • JP2007311025
    • 2007-11-30
    • Lintec Corpリンテック株式会社
    • YAMAZAKI OSAMUICHIKAWA ISAO
    • H01L21/52
    • H01L24/75H01L2224/75304H01L2224/83191
    • PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that prevents the occurrence of voids in the interface between a wiring board and an adhesive layer.
      SOLUTION: In this method of manufacturing a semiconductor device, a chip provided with an uncured adhesive layer is die-bonded on the wiring board via the uncured adhesive layer and then the wiring board whereon the chip is die-bonded is heated to cure the uncured adhesive layer to fabricate a semiconductor device. The method of manufacturing a semiconductor device includes a holding process of holding the surface of the chip where the uncured adhesive layer is not formed by means of a collet having a recessed chip-holding surface; a die-bonding process wherein, after the outer periphery of the chip is brought into contact with the wiring board via the uncured adhesive layer, the chip is die-bonded on the wiring board so that the entire surface of the chip may be brought into contact with the wiring board via the uncured adhesive layer; and a static-pressure pressurization process wherein, before the curing of the uncured adhesive layer is finished, the wiring board with the chip die-bonded thereto is pressurized with a static pressure which is larger than the normal pressure by 0.05 MPa or above.
      COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种制造半导体器件的方法,该半导体器件防止在布线板和粘合剂层之间的界面中出现空隙。 解决方案:在这种制造半导体器件的方法中,将具有未固化粘合剂层的芯片经由未固化的粘合剂层而在布线板上进行裸片接合,然后将芯片的芯片接合的布线板加热至 固化未固化的粘合剂层以制造半导体器件。 制造半导体器件的方法包括通过具有凹陷的芯片保持表面的夹头保持未形成未固化粘合剂层的芯片的表面的保持过程; 芯片接合工艺,其中芯片的外周经由未固化的粘合剂层与布线板接触,芯片被芯片接合在布线板上,使得芯片的整个表面可以进入 通过未固化的粘合剂层与布线板接触; 以及静压加压方法,其中,在未固化的粘合剂层的固化完成之前,将其与芯片压接的芯片的布线板以大于常压的静态压力加压0.05MPa以上。 版权所有(C)2009,JPO&INPIT