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    • 2. 发明授权
    • Methods for characterizing relative film density using spectroscopic analysis at the device level
    • 在器件级使用光谱分析表征相对膜密度的方法
    • US09052269B1
    • 2015-06-09
    • US13460501
    • 2012-04-30
    • Lifan ChenHaifeng WangLi ZengDehua Han
    • Lifan ChenHaifeng WangLi ZengDehua Han
    • G06F19/00G01N31/00G01N23/083
    • G01N23/083G01N9/24G01N23/20091G01N2223/40
    • Methods for characterizing relative film density using spectroscopic analysis at the device level are provided. One such method includes obtaining a composition of materials at preselected areas of a workpiece using energy dispersive X-ray spectroscopy, obtaining an electron energy loss spectrum-imaging data at each of the preselected areas using electron energy loss spectroscopy, removing, for each of the preselected areas, a preselected noise component of the electron energy spectrum-imaging data to form a plasmon energy spectrum-imaging data, generating, for each of the preselected areas, a plasmon energy map based on the respective plasmon energy spectrum-imaging data, determining, for each of the preselected areas, an average plasmon energy value from the respective plasmon energy map, and calculating a relative mass density of the preselected areas based on the average plasmon energy value, a number of valence electrons per molecule, and a molecular weight for each of the preselected areas.
    • 提供了在器件级使用光谱分析来表征相对膜密度的方法。 一种这样的方法包括使用能量色散X射线光谱法在工件的预选区域获得材料的组成,使用电子能量损失光谱法在每个预选区域获得电子能量损失光谱成像数据, 预选区域,电子能谱成像数据的预选噪声分量,以形成等离子体激元能谱成像数据,为每个预选区域生成基于相应的等离子体激元能谱成像数据的等离子体激元能量图,确定 对于每个预选区域,来自各个等离子体激元能量图的平均等离子体激元能量值,并且基于平均等离子体激元能量值,每分子的价电子数和分子量来计算预选区域的相对质量密度 对于每个预选区域。
    • 3. 发明授权
    • Magnetoresistive sensor with overlapping lead layers including alpha tantalum and conductive layers
    • 具有重叠引线层的磁阻传感器,包括α钽和导电层
    • US06934129B1
    • 2005-08-23
    • US10260896
    • 2002-09-30
    • Jinqiu ZhangJing ZhangYiming HuaiLifan Chen
    • Jinqiu ZhangJing ZhangYiming HuaiLifan Chen
    • G11B5/39
    • G11B5/3932
    • Magnetoresistive (MR) sensors are disclosed that have leads that overlap a MR structure and distribute current to and from the MR structure so that the current is not concentrated in small portions of the leads, alleviating the problems mentioned above. For example, the leads can be formed of a body-centered cubic (bcc) form of tantalum, combined with gold or other highly conductive materials. For the situation in which a thicker bcc tantalum layer covers a highly conductive gold layer, the tantalum layer protects the gold layer during MR structure etching, so that the leads can have broad layers of electrically conductive material for connection to MR structures. The broad leads also conduct heat better than the read gap material that they replace, further reducing the temperature at the connection between the leads and the MR structure.
    • 公开了磁阻(MR)传感器,其具有与MR结构重叠的引线并且将电流分配到MR结构和从MR结构分配电流,使得电流不集中在引线的小部分中,减轻了上述问题。 例如,引线可以由体心立方(bcc)形式的钽形成,与金或其它高导​​电材料组合。 对于较厚的bcc钽层覆盖高导电金层的情况,钽层在MR结构蚀刻期间保护金层,使得引线可以具有用于连接到MR结构的宽层导电材料。 宽引线还比它们所替代的读取间隙材料更好地传导热量,进一步降低引线与MR结构之间的连接处的温度。