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    • 2. 发明授权
    • Real-time control of chemical-mechanical polishing processing by monitoring ionization current
    • 通过监测电离电流实时控制化学机械抛光加工
    • US06251784B1
    • 2001-06-26
    • US09206892
    • 1998-12-08
    • Leping LiJames Albert GilhoolyClifford Owen MorganCong Wei
    • Leping LiJames Albert GilhoolyClifford Owen MorganCong Wei
    • H01L21302
    • B24B37/013B24B49/10H01L21/31053
    • A method and apparatus are described for detecting an endpoint of a film removal process in which a target film overlying a stopping film is removed. A chemical reaction product is generated from at least one of the target film and the stopping film; this chemical reaction product is converted to a separate product. The separate product is exposed to ionizing radiation. The ionization current generated by the radiation is monitored as the target film is removed. A change in the ionization current corresponds to a change in concentration of the separate product, thereby indicating the endpoint of the film removal process. In the particular case of removal of a silicon dioxide film overlying a silicon nitride film by chemical-mechanical polishing, the reaction product is ammonia extracted from the polishing slurry. The ammonia is converted to ammonium chloride by a reaction with hydrogen chloride vapor. As the ammonium chloride, entrained in a carrier gas, is pumped through a detection unit, a change in the concentration thereof is detected by monitoring a change in the ionization current generated by a source of alpha particles.
    • 描述了一种用于检测其中去除覆盖停止膜的目标膜的膜去除过程的端点的方法和装置。 从目标膜和停止膜中的至少一个产生化学反应产物; 该化学反应产物转化为单独的产物。 单独的产品暴露于电离辐射。 当去除靶膜时,监测由辐射产生的电离电流。 电离电流的变化对应于分离产物的浓度变化,从而表明膜去除过程的终点。 在通过化学机械抛光去除覆盖氮化硅膜的二氧化硅膜的特定情况下,反应产物是从抛光浆中提取的氨。 通过与氯化氢蒸气反应将氨转化成氯化铵。 由于夹带在载气中的氯化铵被泵送通过检测单元,通过监测由α粒子源产生的电离电流的变化来检测浓度的变化。
    • 10. 发明授权
    • Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system
    • 通过使用CLD系统检测氧化物/氮化物界面来优化化学机械过程
    • US06254453B1
    • 2001-07-03
    • US09409243
    • 1999-09-30
    • Leping LiJames A. GilhoolyClifford O. Morgan, IIICong Wei
    • Leping LiJames A. GilhoolyClifford O. Morgan, IIICong Wei
    • B26B100
    • G01N21/76
    • A method is provided to optimize the chemical mechanical planarization process of wafers having a target removal layer and a stop layer. A slurry is added to a polishing table which includes a polishing pad and a platen adapted for rotation; a portion of the slurry is allowed to engage an interface between the polishing pad and the wafer. A gaseous sample is continuously extracted from the slurry; the gaseous sample includes a reactant product created when the polishing pad engages the stop layer. The gaseous sample is introduced into a reactant product detector. A first time is determined, corresponding to an initial detection of the reactant product in the slurry, thereby creating a first reference point. A second time is determined, corresponding to the detection of a maximum volume of the reactant in said slurry, thereby creating a second reference point. The first and second reference points are then processed to obtain a signal, wherein the signal reflects the uniformity of removal of the layer containing the reactant product.
    • 提供了一种用于优化具有目标去除层和停止层的晶片的化学机械平坦化处理的方法。 将浆料添加到包括抛光垫和适于旋转的压板的抛光台上; 允许一部分浆料与抛光垫和晶片之间的界面接合。 从浆料中连续提取气态样品; 气态样品包括当抛光垫接合停止层时产生的反应物产物。 将气态样品引入反应物产物检测器。 确定第一次,对应于浆料中反应物产物的初始检测,从而产生第一参考点。 确定第二次,对应于所述浆料中反应物的最大体积的检测,从而产生第二参考点。 然后处理第一和第二参考点以获得信号,其中信号反映了含有反应物产物的层的去除的均匀性。