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    • 2. 发明授权
    • Optimization of chemical mechanical process by detection of oxide/nitride interface using CLD system
    • 通过使用CLD系统检测氧化物/氮化物界面来优化化学机械过程
    • US06254453B1
    • 2001-07-03
    • US09409243
    • 1999-09-30
    • Leping LiJames A. GilhoolyClifford O. Morgan, IIICong Wei
    • Leping LiJames A. GilhoolyClifford O. Morgan, IIICong Wei
    • B26B100
    • G01N21/76
    • A method is provided to optimize the chemical mechanical planarization process of wafers having a target removal layer and a stop layer. A slurry is added to a polishing table which includes a polishing pad and a platen adapted for rotation; a portion of the slurry is allowed to engage an interface between the polishing pad and the wafer. A gaseous sample is continuously extracted from the slurry; the gaseous sample includes a reactant product created when the polishing pad engages the stop layer. The gaseous sample is introduced into a reactant product detector. A first time is determined, corresponding to an initial detection of the reactant product in the slurry, thereby creating a first reference point. A second time is determined, corresponding to the detection of a maximum volume of the reactant in said slurry, thereby creating a second reference point. The first and second reference points are then processed to obtain a signal, wherein the signal reflects the uniformity of removal of the layer containing the reactant product.
    • 提供了一种用于优化具有目标去除层和停止层的晶片的化学机械平坦化处理的方法。 将浆料添加到包括抛光垫和适于旋转的压板的抛光台上; 允许一部分浆料与抛光垫和晶片之间的界面接合。 从浆料中连续提取气态样品; 气态样品包括当抛光垫接合停止层时产生的反应物产物。 将气态样品引入反应物产物检测器。 确定第一次,对应于浆料中反应物产物的初始检测,从而产生第一参考点。 确定第二次,对应于所述浆料中反应物的最大体积的检测,从而产生第二参考点。 然后处理第一和第二参考点以获得信号,其中信号反映了含有反应物产物的层的去除的均匀性。