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    • 6. 发明授权
    • Method of fabricating a semiconductor device having a top layer and base
layer joined by wafer bonding
    • 制造具有通过晶片接合连接的顶层和底层的半导体器件的方法
    • US5688714A
    • 1997-11-18
    • US612201
    • 1996-03-07
    • Franciscus P. WiddershovenJan HaismaArie J. R. De KockAart A. Van Gorkum
    • Franciscus P. WiddershovenJan HaismaArie J. R. De KockAart A. Van Gorkum
    • H01L21/02H01L21/18H01L21/225H01L21/329H01L21/331H01L21/38
    • H01L29/6609H01L21/187H01L29/66295Y10S148/012
    • A method is set forth of manufacturing a silicon body (5) having an n-type top layer (1') and an adjoining, more highly doped n-type base layer (2'), by which a first, n-type silicon slice (1) and a second, more highly doped n-type silicon slice (2) are put one on the other and then bonded together by heating. To obtain a low contact resistance between top layer (1') and base layer (2'), a boundary layer having a higher doping than the to player (1') is provided in the top layer (1') adjoining the base layer (2'). According to the invention, the boundary layer is formed by diffusion of an n-type dopant (11, 14) into the first slice (1) from the second slice (2) during heating. The concentration of the n-type dopant (11, 14) is taken to be so high in this case that boron (12) present as an impurity is overdoped, so that undesired pn transitions cannot occur. Measures according to the invention present the advantage that pollution of the first slice (1) is counteracted, while in addition the boundary layer is given a steep concentration profile. Semiconductor devices manufactured in body (5) will as a result have a comparatively high switching speed and a comparatively low forward bias.
    • 提出了制造具有n型顶层(1')和邻接的更高掺杂的n型基极层(2')的硅体(5)的方法,通过该方法,第一n型硅 将切片(1)和第二更高掺杂的n型硅片(2)放在一起,然后通过加热结合在一起。 为了获得顶层(1')和基底层(2')之间的低接触电阻,在与基底层(1')相邻的顶层(1')中提供具有比玩家(1')更高掺杂的边界层 (2')。 根据本发明,通过在加热期间从第二切片(2)将n型掺杂剂(11,14)扩散到第一切片(1)中形成边界层。 在这种情况下,n型掺杂剂(11,14)的浓度被认为是非常高的,因为作为杂质存在的硼(12)被过度掺杂,从而不会发生不期望的pn转变。 根据本发明的措施具有抵消第一切片(1)的污染的优点,另外边界层被赋予陡峭的浓度分布。 结果,在本体(5)中制造的半导体器件具有较高的开关速度和较低的正向偏压。
    • 10. 发明授权
    • Cathode ray tube
    • 阴极射线管
    • US4625146A
    • 1986-11-25
    • US609620
    • 1984-05-14
    • Aart A. Van Gorkum
    • Aart A. Van Gorkum
    • H01J29/48H01J29/56H01J29/50
    • H01J29/566H01J29/485
    • A cathode ray tube comprising in an evacuated envelope (1) an electron gun system (5,104) for generating at least one electron beam (6,7,8,105) which is focused on a target (10,108) by means of at least one accelerating electron lens (22,23,50,51). The lens viewed in the direction of propagation of the electron beam, comprises a first (22,50) and a second (23,51) electrode separated by a lens gap (30,53). In the second electrode is an electrically conductive foil or gauze (31,52) intersects the beam at a distance from the lens gap. When the foil or gauze is flat and is provided at such a location that 0.25
    • 一种阴极射线管,包括在真空的外壳(1)中的电子枪系统(5,104),用于通过至少一个加速电子产生聚焦在靶(10,108)上的至少一个电子束(6,7,8,105) 镜头(22,23,50,51)。 从电子束的传播方向观察的透镜包括由透镜间隙(30,53)分开的第一(22,50)和第二(23,51)电极。 在第二电极中,导电箔或纱布(31,52)与透镜间隙一定距离处的光束相交。 当箔或纱布是平的并且设置在0.25 <1 / R <2.0的位置时,其中l是从箔或纱布到透镜间隙的距离,R是第二电极的部分的半径 或提供箔或纱布。 电子束中的球面像差大大降低。 此外,这种扁平纱布易于制造和组装在电子枪中。