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    • 4. 发明授权
    • Method of fabricating a semiconductor device having a top layer and base
layer joined by wafer bonding
    • 制造具有通过晶片接合连接的顶层和底层的半导体器件的方法
    • US5688714A
    • 1997-11-18
    • US612201
    • 1996-03-07
    • Franciscus P. WiddershovenJan HaismaArie J. R. De KockAart A. Van Gorkum
    • Franciscus P. WiddershovenJan HaismaArie J. R. De KockAart A. Van Gorkum
    • H01L21/02H01L21/18H01L21/225H01L21/329H01L21/331H01L21/38
    • H01L29/6609H01L21/187H01L29/66295Y10S148/012
    • A method is set forth of manufacturing a silicon body (5) having an n-type top layer (1') and an adjoining, more highly doped n-type base layer (2'), by which a first, n-type silicon slice (1) and a second, more highly doped n-type silicon slice (2) are put one on the other and then bonded together by heating. To obtain a low contact resistance between top layer (1') and base layer (2'), a boundary layer having a higher doping than the to player (1') is provided in the top layer (1') adjoining the base layer (2'). According to the invention, the boundary layer is formed by diffusion of an n-type dopant (11, 14) into the first slice (1) from the second slice (2) during heating. The concentration of the n-type dopant (11, 14) is taken to be so high in this case that boron (12) present as an impurity is overdoped, so that undesired pn transitions cannot occur. Measures according to the invention present the advantage that pollution of the first slice (1) is counteracted, while in addition the boundary layer is given a steep concentration profile. Semiconductor devices manufactured in body (5) will as a result have a comparatively high switching speed and a comparatively low forward bias.
    • 提出了制造具有n型顶层(1')和邻接的更高掺杂的n型基极层(2')的硅体(5)的方法,通过该方法,第一n型硅 将切片(1)和第二更高掺杂的n型硅片(2)放在一起,然后通过加热结合在一起。 为了获得顶层(1')和基底层(2')之间的低接触电阻,在与基底层(1')相邻的顶层(1')中提供具有比玩家(1')更高掺杂的边界层 (2')。 根据本发明,通过在加热期间从第二切片(2)将n型掺杂剂(11,14)扩散到第一切片(1)中形成边界层。 在这种情况下,n型掺杂剂(11,14)的浓度被认为是非常高的,因为作为杂质存在的硼(12)被过度掺杂,从而不会发生不期望的pn转变。 根据本发明的措施具有抵消第一切片(1)的污染的优点,另外边界层被赋予陡峭的浓度分布。 结果,在本体(5)中制造的半导体器件具有较高的开关速度和较低的正向偏压。
    • 6. 发明授权
    • Cathode ray tube having an electron gun with bipotential focusing lens
    • 具有带双电位聚焦透镜的电子枪的阴极射线管
    • US4806821A
    • 1989-02-21
    • US40009
    • 1987-04-17
    • Aart A. van Gorkum
    • Aart A. van Gorkum
    • H01J29/48H01J29/62H01J29/94
    • H01J29/488
    • A cathode ray tube having an electron gun with a triode section and bi-potential focusing lens electrodes. Generally such focusing lens electrodes comprise two juxtaposed cylindrical electrodes of which the one nearer the screen (accelerating electrode) is at the screen voltage of approximately 30 kV. If it is desired to increase the diameter of the focusing lens the voltage difference between the focusing electrode and the other cylindrical electrode (accelerating electrode) must be increased. The effect of this is to make the focusing electrode voltage unacceptably low with respect to the triode section. This problem is overcome by providing the accelerating electrode 29 with a diaphragm 30 having an aperture whose area is less than half the cross-sectional area of the focusing electrode (24). The presence of the diaphragm enables the focusing electrode voltage to be increased to an acceptable level and be equal to that applied to a prefocusing lens electrode (22), enabling these electrodes (22, 24) to be interconnected electrically and/or mechanically.
    • 一种阴极射线管,具有具有三极管部分的电子枪和双电位聚焦透镜电极。 通常,这种聚焦透镜电极包括两个并置的圆柱形电极,其中更靠近屏幕(加速电极)的圆柱形电极处于约30kV的屏幕电压。 如果希望增加聚焦透镜的直径,则必须增加聚焦电极和另一个圆柱形电极(加速电极)之间的电压差。 其效果是使聚焦电极电压相对于三极管部分不能接受地低。 通过为加速电极29提供具有面积小于聚焦电极(24)的横截面面积的一半的孔的隔膜30来克服该问题。 隔膜的存在使得聚焦电极电压可以增加到可接受的水平,并且等于施加到预聚焦透镜电极(22)的能量,使得这些电极(22,24)能够电和/或机械地互连。