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1. 发明授权

US5340451A Process for producing a metal organic polymer combination 失效
标题翻译：金属有机聚合物组合的制造方法
公开(公告)号：US5340451A
公开(公告)日：1994-08-23
申请号：US61815
申请日：1993-05-13
申请人： Leena P. Buchwalter , Stephen L. Buchwalter , Charles R. Davis , Ronald D. Goldblatt , John E. Heidenreich, III , Sharon L. Nunes , Jae M. Park , Richard R. Thomas , Domenico Tortorella , Luis M. Ferreiro, deceased
发明人： Leena P. Buchwalter , Stephen L. Buchwalter , Charles R. Davis , Ronald D. Goldblatt , John E. Heidenreich, III , Sharon L. Nunes , Jae M. Park , Richard R. Thomas , Domenico Tortorella , Luis M. Ferreiro, deceased
IPC分类号： C23C18/22 , H05K1/03 , H05K3/18 , H05K3/38 , B01D3/00
CPC分类号： C23C18/22 , H05K1/034 , H05K1/0346 , H05K3/181 , H05K3/381
摘要： A process is disclosed for producing a metal-organic polymer combination by contacting the polymer with a plasma followed by an aqueous solution of a metal salt. In one embodiment a water or nitrous oxide plasma is used to treat a polyimide or a fluorinated polymer. The polymer is combined with a metal cation, the metal being a catalyst for a conventional electroless coating after which it is contacted with an electroless metal plating bath for the formation of electrical circuits and especially for plating high aspect ratio vias in microcircuits. Unlike the conventional electroless process, the cationic catalytic metal is not reduced to a zero valent metal catalyst prior to the application of the electroless metal coating solution.The process also improves the wettability of the polymer, especially the fluorinated polymer and is especially useful in improving the wettability of high aspect ratio vias.
摘要翻译：公开了通过使聚合物与等离子体接触，然后与金属盐水溶液接触来制备金属 - 有机聚合物组合的方法。在一个实施方案中，使用水或一氧化二氮等离子体来处理聚酰亚胺或含氟聚合物。聚合物与金属阳离子结合，金属是用于常规化学镀的催化剂，之后与用于形成电路的无电金属电镀浴接触，特别是用于在微电路中电镀高纵横比通孔。与常规的无电镀方法不同，在施加无电镀金属溶液之前，阳离子催化金属不会还原为零价金属催化剂。该方法还提高聚合物，特别是氟化聚合物的润湿性，并且特别可用于改善高纵横比通孔的润湿性。

2. 发明授权

US5019210A Method for enhancing the adhesion of polymer surfaces by water vapor plasma treatment 失效
标题翻译：通过水蒸气等离子体处理增强聚合物表面粘附的方法
公开(公告)号：US5019210A
公开(公告)日：1991-05-28
申请号：US332656
申请日：1989-04-03
申请人： Ned J. Chou , Ronald D. Goldblatt , John E. Heidenreich, III , Steven E. Molis , Luis M. Ferreiro, deceased
发明人： Ned J. Chou , Ronald D. Goldblatt , John E. Heidenreich, III , Steven E. Molis , Luis M. Ferreiro, deceased
IPC分类号： B29C65/00 , B29C65/52 , B29L9/00 , B44C1/22 , C08J5/12 , C08J7/00 , H05K1/03 , H05K3/38 , H05K3/46
CPC分类号： C08J7/123 , C08J5/12 , H05K1/0346 , H05K3/381 , H05K3/4644 , Y10T428/31721
摘要： Method for water vapor plasma treating the surface of a polymer body to enhance the adhesion of a first and second polymer surface. The method is particularly useful for polyimide surfaces.

3. 发明授权

US5357005A Reactive surface functionalization 失效
标题翻译：反应性表面官能化
公开(公告)号：US5357005A
公开(公告)日：1994-10-18
申请号：US805213
申请日：1991-12-11
申请人： Stephen L. Buchwalter , Charles R. Davis , Ronald D. Goldblatt , Richard R. Thomas
发明人： Stephen L. Buchwalter , Charles R. Davis , Ronald D. Goldblatt , Richard R. Thomas
IPC分类号： C08G18/40 , B05D3/14 , B29C59/14 , C08F8/00 , C08F255/00 , C08F283/00 , C08G59/18 , C08G64/40 , C08G65/00 , C08G83/00 , C08G85/00 , C08J7/18 , H01L23/02 , C08F20/00 , B05D3/04 , C08F283/04 , C08L77/06
CPC分类号： C08J7/123 , B05D3/144 , B29C59/14 , Y10T428/31721
摘要： Method for treating surface of dielectric polymer with water vapor plasma to form reactive sites and grafting a reactive polymer thereto to tailor the properties of the dielectric polymer surface.
摘要翻译：用水蒸汽等离子体处理介电聚合物表面以形成反应位点并将反应性聚合物接枝到其上的方法来调节介电聚合物表面的性质。

4. 发明授权

US5178914A Means of seeding and metallizing polymide 失效
标题翻译：播种和金属化聚酰亚胺的方法
公开(公告)号：US5178914A
公开(公告)日：1993-01-12
申请号：US606015
申请日：1990-10-30
申请人： Ronald D. Goldblatt , Caroline A. Kovac , Domenico Tortorella
发明人： Ronald D. Goldblatt , Caroline A. Kovac , Domenico Tortorella
IPC分类号： B32B15/088 , C08G73/10 , C08J5/18 , C08J7/12 , C09D179/08 , C23C18/30 , C23C18/31 , H05K1/03 , H05K3/18 , H05K3/38
CPC分类号： H05K3/181 , C23C18/30 , H05K1/0346 , H05K3/381
摘要： A method for seeding the surface of a polyimide film which has been generated from a precursor polyamic acid film comprising the steps of: generating a film of polyamic acid on a substance (which may be done by conventional spin coating or by other solution coating techniques well known in the art); then either exposing the polyamic acid film to a solution containing palladium cations; heat-treating the palladium-treated film in a time/temperature schedule that causes imidization of the polymer to occur; exposing the seeded film to an electroless plating bath which causes the deposition of blanket metal film on the surface of the polymer film; or curing the film to the polyimide form; mechanically abrading the film surface, exposing the film to a solution containing palladium cations; exposing the seeded film to an electroless plating bath which causes the deposition of blanket metal film on the surface of the polymer film.
摘要翻译：一种从前体聚酰胺酸薄膜生成的聚酰亚胺薄膜的表面接种方法，包括以下步骤：在物质上生成聚酰胺酸的膜（可以通过常规旋涂或其它溶液涂覆技术完成）本领域已知）; 然后将聚酰胺酸膜暴露于含有钯阳离子的溶液中; 在导致聚合物酰亚胺化的时间/温度表中热处理钯处理的膜; 将接种的膜暴露于化学镀浴，其导致在聚合物膜的表面上沉积橡皮布金属膜; 或将膜固化成聚酰亚胺形式; 机械研磨膜表面，将膜暴露于含有钯阳离子的溶液中; 将接种的膜暴露于化学镀浴，其导致覆盖金属膜沉积在聚合物膜的表面上。

5. 发明授权

US07098676B2 Multi-functional structure for enhanced chip manufacturibility and reliability for low k dielectrics semiconductors and a crackstop integrity screen and monitor 失效
标题翻译：多功能结构，用于增强低k电介质半导体的芯片制造和可靠性，以及裂纹完整性屏幕和监视器
公开(公告)号：US07098676B2
公开(公告)日：2006-08-29
申请号：US10338931
申请日：2003-01-08
申请人： William F. Landers , Thomas M. Shaw , Diana Llera-Hurlburt , Scott W. Crowder , Vincent J. McGahay , Sandra G. Malhotra , Charles R. Davis , Ronald D. Goldblatt , Brett H. Engel
发明人： William F. Landers , Thomas M. Shaw , Diana Llera-Hurlburt , Scott W. Crowder , Vincent J. McGahay , Sandra G. Malhotra , Charles R. Davis , Ronald D. Goldblatt , Brett H. Engel
IPC分类号： G01R27/08 , G01R31/26 , H01L31/07 , H01L23/58
CPC分类号： H01L23/585 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： An on-chip redundant crack termination barrier structure, or crackstop, provides a barrier for preventing defects, cracks, delaminations, and moisture/oxidation contaminants from reaching active circuit regions. Conductive materials in the barrier structure design permits wiring the barriers out to contact pads and device pins for coupling a monitor device to the chip for monitoring barrier integrity.
摘要翻译：片上冗余裂纹终止阻挡结构或裂缝挡板为防止缺陷，裂纹，脱层和水分/氧化污染物到达有源电路区域提供了屏障。阻挡结构设计中的导电材料允许将屏障布线到接触垫和器件引脚上，用于将监测器件耦合到芯片以监测屏障完整性。

6. 发明授权

US5208068A Lamination method for coating the sidewall or filling a cavity in a substrate 失效
标题翻译：用于涂覆侧壁或填充基材中的空腔的层压方法
公开(公告)号：US5208068A
公开(公告)日：1993-05-04
申请号：US626327
申请日：1990-12-13
申请人： Charles R. Davis , Ronald D. Goldblatt
发明人： Charles R. Davis , Ronald D. Goldblatt
IPC分类号： B23K26/38 , H05K1/05 , H05K3/44
CPC分类号： B23K26/382 , B23K26/362 , B23K26/386 , B23K26/40 , B23K26/402 , H05K1/056 , H05K3/445 , B23K2201/35 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/166 , B23K2203/50 , H05K2201/0129 , H05K2201/09581 , H05K2203/0278 , H05K2203/068 , H05K2203/1438
摘要： Method for pressing a material into a through-hole or blind-hole in a substrate. The material is disposed on the surface of the substrate. An environment is provided permitting the material to flow for example by heating the material to the glass transition temperature or above. Thereafter pressure is applied causing the material to flow, first coating the sidewall of the hole and on the continued application of pressure the material flows to completely fill the hole. The resulting substrate can have a substantially planar surface having holes with the periphery coated with or completely filled with the material. The material is preferably a thermoplastic polymeric material such as a polyimide and a perfluorinated polymer.
摘要翻译：将材料压入基板中的通孔或盲孔的方法。该材料设置在基板的表面上。提供允许材料流动的环境，例如通过将材料加热至玻璃化转变温度或更高温度。此后施加压力导致材料流动，首先涂覆孔的侧壁，并且在继续施加压力时材料流动以完全填充孔。所得到的基底可以具有基本上平坦的表面，其具有用周围涂覆或完全填充材料的孔。该材料优选为热塑性聚合材料，例如聚酰亚胺和全氟化聚合物。

7. 发明授权

US07294565B2 Method of fabricating a wire bond pad with Ni/Au metallization 失效
标题翻译：用Ni / Au金属化制造引线接合焊盘的方法
公开(公告)号：US07294565B2
公开(公告)日：2007-11-13
申请号：US10676172
申请日：2003-10-01
申请人： Lloyd G. Burrell , Charles R. Davis , Ronald D. Goldblatt , William F. Landers , Sanjay C. Mehta
发明人： Lloyd G. Burrell , Charles R. Davis , Ronald D. Goldblatt , William F. Landers , Sanjay C. Mehta
IPC分类号： H01L21/28 , H01L23/48
CPC分类号： H01L24/05 , H01L23/3192 , H01L23/53223 , H01L24/03 , H01L2224/04042 , H01L2224/0501 , H01L2224/05022 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05644 , H01L2224/45124 , H01L2224/48744 , H01L2924/00014 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2224/48
摘要： A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.
摘要翻译：提供了一种通过能够防止在Ni / Au焊盘冶金的无电沉积期间可能的化学侵蚀的材料来密封引线接合焊盘的暴露表面的方法。具体地说，本发明提供了一种TiN / Ti或TiN / Al帽作为覆盖引线接合焊盘露出表面的保护涂层的方法。 TiN / Ti或TiN / Al帽不受用于形成Ni / Au金属化的碱性化学物质的影响，但它提供了将接合焊盘连接到Ni / Au焊盘金属化的足够的电通路。

8. 发明授权

US06339022B1 Method of annealing copper metallurgy 失效
标题翻译：铜冶炼退火方法
公开(公告)号：US06339022B1
公开(公告)日：2002-01-15
申请号：US09475712
申请日：1999-12-30
申请人： Arne W. Ballantine , Edward C. Cooney, III , George A. Dunbar, III , Cheryl G. Faltermeier , Jeffrey D. Gilbert , Ronald D. Goldblatt , Nancy A. Greco , Stephen E. Greco , Frank V. Liucci , Glenn Robert Miller , Bruce A. Root , Andrew H. Simon , Anthony K. Stamper , Ronald A. Warren , David H. Yao
发明人： Arne W. Ballantine , Edward C. Cooney, III , George A. Dunbar, III , Cheryl G. Faltermeier , Jeffrey D. Gilbert , Ronald D. Goldblatt , Nancy A. Greco , Stephen E. Greco , Frank V. Liucci , Glenn Robert Miller , Bruce A. Root , Andrew H. Simon , Anthony K. Stamper , Ronald A. Warren , David H. Yao
IPC分类号： H01L2144
CPC分类号： H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.
摘要翻译：一种通过化学机械平面化方法提高具有铜冶金平面化的半导体器件的生产率的方法，该方法包括含有导体钝化剂（如苯并三唑）的浆料，其中使用非氧化退火来除去可能干扰的任何残余物在进一步的金属化步骤之前，在衬底上的导电焊盘的机械探测。退火可以通过几种技术中的任何一种进行，包括真空室，标准炉或快速热退火。

9. 发明授权

US06534863B2 Common ball-limiting metallurgy for I/O sites 有权
公开(公告)号：US06534863B2
公开(公告)日：2003-03-18
申请号：US09781121
申请日：2001-02-09
申请人： George F. Walker , Ronald D. Goldblatt , Peter A. Gruber , Raymond R. Horton , Kevin S. Petrarca , Richard P. Volant , Tien-Jen Cheng
发明人： George F. Walker , Ronald D. Goldblatt , Peter A. Gruber , Raymond R. Horton , Kevin S. Petrarca , Richard P. Volant , Tien-Jen Cheng
IPC分类号： H01L2348
CPC分类号： H01L24/48 , H01L21/76865 , H01L21/76873 , H01L21/76879 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/45 , H01L24/85 , H01L2224/0401 , H01L2224/04042 , H01L2224/04073 , H01L2224/05083 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05181 , H01L2224/05556 , H01L2224/05572 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/11912 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/13116 , H01L2224/16 , H01L2224/45144 , H01L2224/48453 , H01L2224/48463 , H01L2224/48644 , H01L2224/48664 , H01L2224/48669 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85207 , H01L2924/0001 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/04953 , H01L2924/05042 , H01L2924/14 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/00015 , H01L2924/00012
摘要： A process is described for forming a common input-output (I/O) site that is suitable for both wire-bond and solder bump flip chip connections, such as controlled-collapse chip connections (C4). The present invention is particularly suited to semiconductor chips that use copper as the interconnection material, in which the soft dielectrics used in manufacturing such chips are susceptible to damage due to bonding forces. The present invention reduces the risk of damage by providing site having a noble metal on the top surface of the pad, while providing a diffusion barrier to maintain the high conductivity of the metal interconnects. Process steps for forming an I/O site within a substrate are reduced by providing a method for selectively depositing metal layers in a feature formed in the substrate. Since the I/O sites of the present invention may be used for either wire-bond or solder bump connections, this provides increased flexibility for chip interconnection options, while also reducing process costs.

10. 发明授权

US06395164B1 Copper seed layer repair technique using electroless touch-up 失效
标题翻译：铜种子层修复技术采用化学镀
公开(公告)号：US06395164B1
公开(公告)日：2002-05-28
申请号：US09414224
申请日：1999-10-07
申请人： Panayotis Andricacos , James E. Fluegel , John G. Gaudiello , Ronald D. Goldblatt , Sandra G. Malhotra , Milan Paunovic
发明人： Panayotis Andricacos , James E. Fluegel , John G. Gaudiello , Ronald D. Goldblatt , Sandra G. Malhotra , Milan Paunovic
IPC分类号： C25D712
CPC分类号： H01L21/76868 , C23C18/161 , C23C18/1653 , C25D7/123 , H01L21/288 , H01L21/76843 , H01L21/76873
摘要： An electroless touch-up process for repairing copper metallization deposited in dual damascene structures with high aspect ratios. An initial copper strike layer is produced by directional deposition techniques such that discontinuous sidewall coverage occurs. An evolutionary electroless touch-up process then proceeds to conformally grow the copper layer on all surfaces. The result of the evolutionary process is to produce a continuous copper strike layer that can be used with conventional electroplating techniques.
摘要翻译：用于修复沉积在具有高纵横比的双镶嵌结构中的铜金属化的无电镀修补方法。通过定向沉积技术产生初始铜击穿层，从而发生不连续的侧壁覆盖。然后进行进化的无电触摸处理以在所有表面上保形地生长铜层。进化过程的结果是产生可与常规电镀技术一起使用的连续铜击穿层。

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