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1. 发明授权

US07724988B2 Opto-electronic board 有权
标题翻译：光电板
公开(公告)号：US07724988B2
公开(公告)日：2010-05-25
申请号：US11927589
申请日：2007-10-29
申请人： Laurent A. Dellmann , Michel Despont , Bert J. Offrein , David J. Webb
发明人： Laurent A. Dellmann , Michel Despont , Bert J. Offrein , David J. Webb
IPC分类号： G02B6/12 , H01L21/00
CPC分类号： G02B6/4232 , G02B6/4249 , H05K1/0274 , H05K1/184 , H05K2201/10121
摘要： An opto-electronic board including a printed wiring board with an optical waveguide, a metallic area, and a hole, wherein an abutting face of the optical waveguide and an abutting face of the metallic area form a part of the side face of the hole. The opto-electronic board further comprises an opto-electronic circuit with a bonding pad, wherein the opto-electronic circuit is arranged in the hole and soldered with its bonding pad to the abutting face of the metallic area.
摘要翻译：一种光电板，包括具有光波导，金属区域和孔的印刷线路板，其中所述光波导的抵接面和所述金属区域的抵接面形成所述孔的侧面的一部分。光电板还包括具有接合焊盘的光电子电路，其中光电子电路布置在孔中并用其焊盘焊接到金属区域的邻接面。

2. 发明申请

US20080247706A1 OPTO-ELECTRONIC BOARD 有权
标题翻译： OPTO电子板
公开(公告)号：US20080247706A1
公开(公告)日：2008-10-09
申请号：US11927589
申请日：2007-10-29
申请人： Laurent A. DELLMANN , Michel Despont , Bert J. Offrein , David J. Webb
发明人： Laurent A. DELLMANN , Michel Despont , Bert J. Offrein , David J. Webb
IPC分类号： G02B6/12
CPC分类号： G02B6/4232 , G02B6/4249 , H05K1/0274 , H05K1/184 , H05K2201/10121
摘要： An opto-electronic board including a printed wiring board with an optical waveguide, a metallic area, and a hole, wherein an abutting face of the optical waveguide and an abutting face of the metallic area form a part of the side face of the hole. The opto-electronic board further comprises an opto-electronic circuit with a bonding pad, wherein the opto-electronic circuit is arranged in the hole and soldered with its bonding pad to the abutting face of the metallic area.
摘要翻译：一种光电板，包括具有光波导，金属区域和孔的印刷线路板，其中所述光波导的抵接面和所述金属区域的抵接面形成所述孔的侧面的一部分。光电板还包括具有接合焊盘的光电子电路，其中光电子电路布置在孔中并用其焊盘焊接到金属区域的邻接面。

3. 发明授权

US07336864B2 Opto-electronic board 有权
标题翻译：光电板
公开(公告)号：US07336864B2
公开(公告)日：2008-02-26
申请号：US11615838
申请日：2006-12-22
申请人： Laurent A. Dellmann , Michel Despont , Bert J. Offrein , David J. Webb
发明人： Laurent A. Dellmann , Michel Despont , Bert J. Offrein , David J. Webb
IPC分类号： G02B6/12
CPC分类号： G02B6/4232 , G02B6/4249 , H05K1/0274 , H05K1/184 , H05K2201/10121
摘要： An opto-electronic board including a printed wiring board with an optical waveguide, a metallic area, and a hole, wherein an abutting face of the optical waveguide and an abutting face of the metallic area form a part of the side face of the hole. The opto-electronic board further comprises an opto-electronic circuit with a bonding pad, wherein the opto-electronic circuit is arranged in the hole and soldered with its bonding pad to the abutting face of the metallic area.
摘要翻译：一种光电板，包括具有光波导，金属区域和孔的印刷线路板，其中所述光波导的抵接面和所述金属区域的抵接面形成所述孔的侧面的一部分。光电板还包括具有接合焊盘的光电子电路，其中光电子电路布置在孔中并用其焊盘焊接到金属区域的邻接面。

4. 发明授权

US5177031A Method of passivating etched mirror facets of semiconductor laser diodes 失效
标题翻译：钝化半导体激光二极管的刻蚀镜面的方法
公开(公告)号：US5177031A
公开(公告)日：1993-01-05
申请号：US707557
申请日：1991-05-30
申请人： Peter L. Buchmann , David J. Webb , Peter Vettiger
发明人： Peter L. Buchmann , David J. Webb , Peter Vettiger
IPC分类号： H01L21/308 , H01L21/306 , H01L21/314 , H01L21/316 , H01L21/318 , H01S5/00 , H01S5/02 , H01S5/028
CPC分类号： H01L21/02052 , H01L21/02178 , H01L21/02266 , H01L21/02307 , H01L21/314 , H01L21/31616 , H01L21/3185 , H01S5/028 , H01S5/0203 , H01S5/0282 , Y10S438/958
摘要： A method of passivating etched mirror facets of semiconductor laser diodes which enhances device reliability.The etched mirror facet is first subjected to a weet-etch process to substantially remove any native oxide as well as any surface layer which may have been mechanically damaged during the preceding mirror etch process. Then, a passivation pre-treatment is applied whereby any residual oxygen is removed and a sub-monolayer is formed which permanently reduces the non-radiative recombination of minority carriers at the mirror facet. Finally, the pre-treated mirror surface is coated with a passivation layer to avoid any environmental effect on the mirror.
摘要翻译：钝化半导体激光二极管的蚀刻镜面的方法，这增强了器件的可靠性。蚀刻的镜面首先经受蚀刻蚀刻工艺，以基本上除去任何自然氧化物以及在前面的镜蚀刻工艺期间可能被机械损坏的任何表面层。然后，施加钝化预处理，由此除去任何残留的氧，并且形成亚单层，其永久地减少在镜面处的少数载流子的非辐射复合。最后，预处理的镜面涂有钝化层，以避免对镜子产生任何环境影响。

5. 发明授权

US09805949B2 High κ gate stack on III-V compound semiconductors 有权
公开(公告)号：US09805949B2
公开(公告)日：2017-10-31
申请号：US13607741
申请日：2012-09-09
申请人： Jean Fompeyrine , Edward W. Kiewra , Steven J. Koester , Devendra K. Sadana , David J. Webb
发明人： Jean Fompeyrine , Edward W. Kiewra , Steven J. Koester , Devendra K. Sadana , David J. Webb
IPC分类号： H01L21/02 , H01L21/316 , H01L21/28 , H01L21/314 , H01L29/51 , H01L29/78
CPC分类号： H01L21/3205 , H01L21/02148 , H01L21/02181 , H01L21/02271 , H01L21/28158 , H01L21/3145 , H01L21/31645 , H01L21/32051 , H01L29/513 , H01L29/518 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a high k gate stack on a surface of a III-V compound semiconductor, such GaAs, is provided. The method includes subjecting a III-V compound semiconductor material to a precleaning process which removes native oxides from a surface of the III-V compound semiconductor material; forming a semiconductor, e.g., amorphous Si, layer in-situ on the cleaned surface of the III-V compound semiconductor material; and forming a dielectric material having a dielectric constant that is greater than silicon dioxide on the semiconducting layer. In some embodiments, the semiconducting layer is partially or completely converted into a layer including at least a surface layer that is comprised of AOxNy prior to forming the dielectric material. In accordance with the present invention, A is a semiconducting material, preferably Si, x is 0 to 1, y is 0 to 1 and x and y are both not zero.

6. 发明授权

US09623988B2 High speed poucher 有权
公开(公告)号：US09623988B2
公开(公告)日：2017-04-18
申请号：US13072681
申请日：2011-03-26
申请人： Martin T. Garthaffner , Dwight D. Williams , Jeremy J. Straight , David J. Webb , Carl G. Miller
发明人： Martin T. Garthaffner , Dwight D. Williams , Jeremy J. Straight , David J. Webb , Carl G. Miller
IPC分类号： B65D53/02 , B65D45/00 , B65B1/02 , B65B29/00 , B65B43/50 , B65B43/60 , B65B61/06 , B65B1/48
CPC分类号： B65B1/02 , B65B1/48 , B65B29/00 , B65B43/50 , B65B43/60 , B65B51/26 , B65B57/14 , B65B61/06
摘要： An apparatus and methods for producing at extremely high production speeds small pouches filled with tobacco or other granular, powdered or solid content. An endless web substrate, with or without flavor film thereon, is formed into a tubular shape with a longitudinal seam. The tube is cut to individual lengths, and a procession of tubes is crimp-closed at one end, filled and crimp-closed at the other end to complete pouch production. During production, the seams formed at the crimped ends of the pouch are parallel to one another and the longitudinal seam of the pouch is midway between the sides of the pouch and orthogonal to the seams formed at the crimped ends of the pouch.

7. 发明授权

US6044077A Method and apparatus for ATM switching 失效
标题翻译： ATM交换的方法和装置
公开(公告)号：US6044077A
公开(公告)日：2000-03-28
申请号：US860772
申请日：1997-07-07
申请人： Ronald P. Luijten , David J. Webb
发明人： Ronald P. Luijten , David J. Webb
IPC分类号： H04Q3/00 , H04L12/28 , H04L12/935 , H04Q11/04 , H04L12/56
CPC分类号： H04L49/3081 , H04Q11/0478
摘要： A switch for use in an ATM network is disclosed. The switch is designed to perform a function beyond that normally achievable with a virtual path switch functioning in accordance with the ATM standard. The switch according to the invention has data stored in a look-up table (431-433) which allows it to identify communication cells of particular individual virtual channels, indicated by the virtual path identifier (VCI), although these cells cannot be distinguished on the basis of their virtual path indicators (VPIs). This identification is attempted before the usual step of forwarding an incoming communication cell based solely on its virtual path indicator. A priority circuitry (44) ensures that entries associated with the combined VPI/VCI is given a priority over those associated only with the VPI. The switch can extract cells of individual virtual channels passing through it. It can also insert virtual channels into the ATM network.
摘要翻译： PCT No.PCT / EP95 / 00276 Sec。 371日期1997年7月7日 102（e）日期1997年7月7日PCT 1995年1月26日PCT PCT。公开号WO96 / 23391 日期：1996年8月1日公开了一种在ATM网络中使用的开关。该交换机被设计为执行超出通常根据ATM标准工作的虚拟路径交换机可实现的功能。根据本发明的交换机具有存储在查找表（431-433）中的数据，其允许其识别由虚拟路径标识符（VCI）指示的特定单个虚拟信道的通信小区，尽管这些小区不能在其虚拟路径指标（VPI）的基础。在基于其虚拟路径指示符转发传入通信小区的通常步骤之前尝试该标识。优先级电路（44）确保与组合的VPI / VCI相关联的条目被优先于仅与VPI相关联的条目。交换机可以提取通过它的各个虚拟通道的单元。它还可以将虚拟通道插入ATM网络。

8. 发明授权

US5029555A Wafer holder method and apparatus in a vacuum deposition system 失效
标题翻译：真空沉积系统中的晶片保持器方法和装置
公开(公告)号：US5029555A
公开(公告)日：1991-07-09
申请号：US406652
申请日：1989-09-13
申请人： Hans P. Dietrich , Hanspeter Ott , David J. Webb
发明人： Hans P. Dietrich , Hanspeter Ott , David J. Webb
IPC分类号： C23C14/50 , G03F7/20 , H01L21/68
CPC分类号： G03F7/70691 , H01L21/68
摘要： A method and apparatus for maintaining orientation of a wafer with respect to the wafer holder and a source emission is disclosed.Briefly stated, a wafer is disposed on a wafer holder and displaced in translation only while made to continuously follow a planar closed path which allows the rotation of the wafer with respect to source of emission while keeping the wafer and the wafer holder uniformly aligned with respect to each other.
摘要翻译：公开了一种用于保持晶片相对于晶片保持器的取向和源发射的方法和装置。简而言之，晶片设置在晶片保持器上并且平移地移位，同时使其连续地遵循平面闭合路径，其允许晶片相对于发射源旋转，同时保持晶片和晶片保持器均匀地对准对彼此。

9. 发明授权

US5319725A Bilithic composite for optoelectronic integration 失效
标题翻译：石墨复合材料用于光电一体化
公开(公告)号：US5319725A
公开(公告)日：1994-06-07
申请号：US995490
申请日：1992-12-23
申请人： Peter Buchmann , David J. Webb , Peter Vettiger
发明人： Peter Buchmann , David J. Webb , Peter Vettiger
IPC分类号： G02B6/122 , G02B6/12 , G02B6/42 , G02B6/43 , H01L27/14 , H01L27/15 , H01S5/022
CPC分类号： G02B6/4231 , G02B6/12004 , G02B6/43 , G02B6/423 , H01S5/02252 , H01S5/02292
摘要： Optoelectronic composite consisting of two chips, the first chip 10 being made of a first material, the second one 13 being made of another material. The first chip 10, for example, comprises a multiplicity of active optoelectronic devices e.g. a laser diode 11 and a photo diode 12, all being monolithically integrated. A multiplicity of other optical devices, e.g. a waveguide 16, is monolithically integrated on the second chip 13. In addition this second chip 13 has depressions of the size of the devices 11,12 integrated on said first chip 10. These devices and the waveguide 16 of the second chip 13 are automatically aligned when flipping both chips together.
摘要翻译：由两个芯片组成的光电复合体，第一芯片10由第一材料制成，第二芯片10由另一材料制成。第一芯片10例如包括多个有源光电器件，例如，激光二极管11和光电二极管12，全部是单片集成的。多个其他光学装置，例如，波导16单片地集成在第二芯片13上。此外，第二芯片13具有集成在所述第一芯片10上的器件11,12的尺寸的凹陷。这些器件和第二芯片13的波导16自动地将两个芯片翻转在一起时对齐。

10. 发明申请

US20120023874A1 HIGH SPEED POUCHER 有权
标题翻译：高速打孔机
公开(公告)号：US20120023874A1
公开(公告)日：2012-02-02
申请号：US13072681
申请日：2011-03-26
申请人： Martin T. Garthaffner , Dwight D. Williams , Jeremy J. Straight , David J. Webb , Carl G. Miller
发明人： Martin T. Garthaffner , Dwight D. Williams , Jeremy J. Straight , David J. Webb , Carl G. Miller
IPC分类号： B65B51/26
CPC分类号： B65B1/02 , B65B1/48 , B65B29/00 , B65B43/50 , B65B43/60 , B65B51/26 , B65B57/14 , B65B61/06
摘要： An apparatus and methods for producing at extremely high production speeds small pouches filled with tobacco or other granular, powdered or solid content. An endless web substrate, with or without flavor film thereon, is formed into a tubular shape with a longitudinal seam. The tube is cut to individual lengths, and a procession of tubes is crimp-closed at one end, filled and crimp-closed at the other end to complete pouch production. During production, the seams formed at the crimped ends of the pouch are parallel to one another and the longitudinal seam of the pouch is midway between the sides of the pouch and orthogonal to the seams formed at the crimped ends of the pouch.
摘要翻译：用于以非常高的生产速度生产装满烟草或其它颗粒状，粉末状或固体成分的小袋的装置和方法。在其上具有或不具有风味膜的环形网状基材形成具有纵向接缝的管状。管被切割成单独的长度，并且管的游程在一端被卷曲闭合，在另一端被填充和卷曲封闭以完成袋生产。在生产期间，形成在袋的卷曲端部处的接缝彼此平行，并且袋的纵向接缝在袋的侧面之间的中间并且与形成在袋的卷曲端处的接缝正交。

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