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1. 发明授权

US09037624B1 Using memory access times for random number generation 有权
标题翻译：使用存储器访问时间进行随机数生成
公开(公告)号：US09037624B1
公开(公告)日：2015-05-19
申请号：US13566648
申请日：2012-08-03
申请人： Laszlo Hars , Monty Aaron Forehand , Donald Preston Matthews , Tong Shirh Stone , Navneeth Kankani , Rodney Virgil Bowman
发明人： Laszlo Hars , Monty Aaron Forehand , Donald Preston Matthews , Tong Shirh Stone , Navneeth Kankani , Rodney Virgil Bowman
IPC分类号： G06F7/58
CPC分类号： G06F7/588
摘要： The disclosure is related systems and methods for using operation durations of a data storage medium to generate random numbers. In one embodiment, a device may comprise a random number generator circuit configured to store a value representing a duration of an operation on the data storage medium, and generate a random number based on the value. Another embodiment may be a method comprising recording durations of access operations to a data storage medium, and generating a random number based on the durations.
摘要翻译：本公开是用于使用数据存储介质的操作持续时间来生成随机数的相关系统和方法。在一个实施例中，设备可以包括随机数发生器电路，其被配置为将表示操作的持续时间的值存储在数据存储介质上，并且基于该值生成随机数。另一个实施例可以是一种方法，包括将访问操作的持续时间记录到数据存储介质，以及基于持续时间生成随机数。

2. 发明申请

US20120198312A1 METHODS AND DEVICES TO INCREASE MEMORY DEVICE DATA RELIABILITY 有权
标题翻译：增加存储器件数据可靠性的方法和设备
公开(公告)号：US20120198312A1
公开(公告)日：2012-08-02
申请号：US13019832
申请日：2011-02-02
申请人： Navneeth Kankani , Mark Allen Gaertner , Rodney Virgil Bowman , Ryan James Goss , David Scott Seekins , Tong Shirh Stone
发明人： Navneeth Kankani , Mark Allen Gaertner , Rodney Virgil Bowman , Ryan James Goss , David Scott Seekins , Tong Shirh Stone
IPC分类号： G06F11/10
CPC分类号： G06F11/102 , G06F11/1012 , G11C29/52
摘要： A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.
摘要翻译：将第一数据集写入被识别为具有较高数据可靠性的第一存储器单元，并且将第二数据组写入被识别为具有比第一存储器单元更低的数据可靠性的第二存储器单元。在一些情况下，第二数据集可以包括有助于读取和/或解码第一数据集的元数据或冗余信息。写入第二数据集的动作增加了第一数据集的数据可靠性。第二数据集可以是空模式，例如所有擦除位。

3. 发明授权

US08631294B2 Methods and devices to increase memory device data reliability 有权
标题翻译：提高存储器件数据可靠性的方法和设备
公开(公告)号：US08631294B2
公开(公告)日：2014-01-14
申请号：US13019832
申请日：2011-02-02
申请人： Navneeth Kankani , Mark A. Gaertner , Rodney V. Bowman , Ryan J. Goss , David S. Seekins , Tong Shirh Stone
发明人： Navneeth Kankani , Mark A. Gaertner , Rodney V. Bowman , Ryan J. Goss , David S. Seekins , Tong Shirh Stone
IPC分类号： G06F11/00
CPC分类号： G06F11/102 , G06F11/1012 , G11C29/52
摘要： A first data set is written to first memory units identified as having a higher data reliability and a second data set is written to second memory units identified as having a lower data reliability than the first memory units. In some cases, the second data set may include metadata or redundancy information that is useful to aid in reading and/or decoding the first data set. The act of writing the second data set increases the data reliability of the first data set. The second data set may be a null pattern, such as all erased bits.
摘要翻译：将第一数据集写入被识别为具有较高数据可靠性的第一存储器单元，并且将第二数据组写入被识别为具有比第一存储器单元更低的数据可靠性的第二存储器单元。在一些情况下，第二数据集可以包括有助于读取和/或解码第一数据集的元数据或冗余信息。写入第二数据集的动作增加了第一数据集的数据可靠性。第二数据集可以是空模式，例如所有擦除位。

4. 发明授权

US08009471B2 Low-wear writing in a solid state memory device 有权
标题翻译：低磨损写入固态存储器件
公开(公告)号：US08009471B2
公开(公告)日：2011-08-30
申请号：US12638830
申请日：2009-12-15
申请人： Jonathan W. Haines , Tong Shirh Stone , Brett Alan Cook
发明人： Jonathan W. Haines , Tong Shirh Stone , Brett Alan Cook
IPC分类号： G11C16/04
CPC分类号： G11C11/5628 , G11C16/0483 , G11C2211/5641
摘要： A method includes programming a non-volatile memory. The memory includes a plurality of cells, wherein each cell is configured to store a plurality of values, wherein each of value is represented by N digits where N is an integer greater than 1, wherein each of the plurality of cells is further configured to store electric charge representing a plurality of voltage levels, and wherein each of the plurality of voltage levels represents one of the plurality of values. Programming comprises providing the plurality of voltage levels into a first group of voltage levels and a second group of voltage levels in one of the plurality of cells, wherein a highest voltage level of the first group is less than or substantially equal to a lowest voltage level of the second group, and storing, in the first group of voltage levels, electric charge representing a value comprising, at most, N-1 digits.
摘要翻译：一种方法包括对非易失性存储器进行编程。存储器包括多个单元，其中每个单元被配置为存储多个值，其中每个值由N个数字表示，其中N是大于1的整数，其中多个单元中的每一个还被配置为存储电荷表示多个电压电平，并且其中所述多个电压电平中的每一个表示所述多个值中的一个。编程包括将多个电压电平提供到第一组电压电平和多个电池之一中的第二组电压电平，其中第一组的最高电压电平小于或基本上等于最低电压电平并且在第一组电压电平中存储表示包括至多N-1个数字的值的电荷。

5. 发明申请

US20110141833A1 LOW-WEAR WRITING IN A SOLID STATE MEMORY DEVICE 有权
标题翻译：低密度写入固态存储器件
公开(公告)号：US20110141833A1
公开(公告)日：2011-06-16
申请号：US12638830
申请日：2009-12-15
申请人： Jonathan W. Haines , Tong Shirh Stone , Brett Alan Cook
发明人： Jonathan W. Haines , Tong Shirh Stone , Brett Alan Cook
IPC分类号： G11C7/22
CPC分类号： G11C11/5628 , G11C16/0483 , G11C2211/5641
摘要： A method includes programming a non-volatile memory. The memory includes a plurality of cells, wherein each cell is configured to store a plurality of values, wherein each of value is represented by N digits where N is an integer greater than 1, wherein each of the plurality of cells is further configured to store electric charge representing a plurality of voltage levels, and wherein each of the plurality of voltage levels represents one of the plurality of values. Programming comprises providing the plurality of voltage levels into a first group of voltage levels and a second group of voltage levels in one of the plurality of cells, wherein a highest voltage level of the first group is less than or substantially equal to a lowest voltage level of the second group, and storing, in the first group of voltage levels, electric charge representing a value comprising, at most, N−1 digits.
摘要翻译：一种方法包括对非易失性存储器进行编程。存储器包括多个单元，其中每个单元被配置为存储多个值，其中每个值由N个数字表示，其中N是大于1的整数，其中多个单元中的每一个还被配置为存储电荷表示多个电压电平，并且其中所述多个电压电平中的每一个表示所述多个值中的一个。编程包括将多个电压电平提供到第一组电压电平和多个电池之一中的第二组电压电平，其中第一组的最高电压电平小于或基本上等于最低电压电平并且在第一组电压电平中存储表示包括至多N-1个数字的值的电荷。

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