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1. 发明专利

JP2012043796A Electrode 有权
标题翻译：电极
公开(公告)号：JP2012043796A
公开(公告)日：2012-03-01
申请号：JP2011179198
申请日：2011-08-18
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： FISCHER ANDREAS , WILLIAM S KENNEDY , LOEWENHARDT PETER , TRUSSEL DAVID
IPC分类号： H05H1/46 , C23C16/509 , C25B11/00 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32541 , H01J37/32009
摘要： PROBLEM TO BE SOLVED: To provide a multi-part upper electrode for a semiconductor processing reactor with a replaceable portion and a method of replacing a portion of the electrode.SOLUTION: A replaceable electrode comprises: a ring shaped backing plate 116; a plurality of electrode segments 114 forming a ring shaped electrode; an electrically conductive elastomer securing the plurality of electrode segments 114 to the ring shaped backing plate 116, in which the plurality of electrode segments 114 form a ring having an inner diameter of about 12 inches (30.48 centimeter) and an inner edge 140 with an inclined surface, and the ring shaped backing plate 116 can be attached onto a top plate 118 in a plasma reaction chamber with a plurality of threaded screws 134, 136 extending into the ring shaped backing plate 116 from the back surface of the top pate 118.
摘要翻译：要解决的问题：提供具有可替换部分的半导体处理反应器的多部分上电极以及替换部分电极的方法。解决方案：可替换电极包括：环形背板116; 形成环形电极的多个电极段114; 将多个电极段114固定到环形背板116的导电弹性体，其中多个电极段114形成具有约12英寸（30.48厘米）的内径的环和具有倾斜的内边缘140 表面，并且环形背板116可以被附接到等离子体反应室中的顶板118上，其中多个螺纹螺钉134,136从顶板118的后表面延伸到环形背板116中。 P>版权所有（C）2012，JPO＆INPIT

2. 发明专利

JP2010282970A Operation method of plasma treatment device equipped with electrode simultaneously responsive to a plurality of frequencies 有权
标题翻译：配备电极的等离子体处理装置的操作方法同时对多种频率的响应
公开(公告)号：JP2010282970A
公开(公告)日：2010-12-16
申请号：JP2010135198
申请日：2010-06-14
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： VAHEDI VAHID , LOEWENHARDT PETER , ELLINGBOE BERT , KUTHI ANDY , FISCHER ANDREAS
IPC分类号： H05H1/46 , C23C16/505 , C23C16/509 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32165
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device capable of carrying out desired independent control on plasma ion energy and plasma density. SOLUTION: The plasma treatment device includes: a vacuum chamber 10 equipped with a port for combining gas in the vacuum chamber 10, a first electrode 18 for applying an electric field on the gas in the vacuum chamber 10, and a second electrode 26 at a DC reference potential at an spacing from the first electrode 18, and made to excite the gas to plasma at an area including the volume between the electrodes 18, 26; and a circuit 70 for supplying to plasma at the same time the electric fields with different frequencies for the first electrode 18. The vacuum chamber 10 is so structured to make electric power with different frequencies take substantially different routes passing the area. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够对等离子体离子能量和等离子体密度进行所需的独立控制的等离子体处理装置。解决方案：等离子体处理装置包括：真空室10，其配备有用于在真空室10中组合气体的端口，用于在真空室10中的气体上施加电场的第一电极18和第二电极 26处于与第一电极18间隔的DC参考电位处，并使气体在包括电极18,26之间的体积的区域处激发到等离子体; 以及电路70，用于同时向第一电极18提供具有不同频率的电场的等离子体。真空室10被构造成使得具有不同频率的电力采取通过该区域的基本不同的路线。版权所有（C）2011，JPO＆INPIT

3. 发明公开

EP1683194A4 LINE EDGE ROUGHNESS REDUCTION FOR TRENCH ETCH 审中-公开
标题翻译： LINIENÄTZ-RAUHIGKEITREDUKTIONFÜRDIEGRABENÄTZUNG
公开(公告)号：EP1683194A4
公开(公告)日：2008-06-25
申请号：EP04810317
申请日：2004-11-03
申请人： LAM RES CORP
发明人： WAGGANER ERIC , ZHU HELEN H , LE DANIEL , LOEWENHARDT PETER
IPC分类号： H01L21/4763 , H01L20060101 , H01L21/311 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench (314, Fig. 3B) to a trench depth (318, Fig. 3B) in a dielectric layer (308, Fig. 3B) over a substrate (304, Fig. 3B) is provided. An ARC (310, Fig. 3B) is applied over the dielectric layer (308, Fig. 3B). A photoresist mask (312, Fig. 3B) is formed on the ARC (310, Fig. 3B), where the photoresist mask has a thickness. The ARC is etched through. A trench (314, Fig. 3B) is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了用于在衬底（304，图3B）上方的介电层（308，图3B）中蚀刻沟槽（314，图3B）至沟槽深度（318，图3B）的方法。在介电层（308，图3B）上施加ARC（310，图3B）。在ARC（310，图3B）上形成光致抗蚀剂掩模（312，图3B），其中光致抗蚀剂掩模具有厚度。 ARC被蚀刻穿过。用介电材料将沟槽（图3B中的314）蚀刻到介电层中，使光致抗蚀剂蚀刻选择性在1：1和2：1之间。

4. 发明公开

EP1474264A4 A PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：电浆处理装置及方法
公开(公告)号：EP1474264A4
公开(公告)日：2008-08-13
申请号：EP03739797
申请日：2003-02-14
申请人： LAM RES CORP
发明人： FISCHER ANDREAS , TRUSSEL DAVE , KENNEDY BILL , LOEWENHARDT PETER
IPC分类号： H05H1/46 , H01J37/32 , H01L21/3065 , B23K10/00
CPC分类号： H01J37/32082 , H01J37/32623 , H01J37/32642
摘要： The present invention includes a system and method for confining plasma within a plasma processing chamber. The plasma processing apparatus comprises a first electrode (152), a power generator (154), a second electrode (156), at least one confinement ring (166), and a ground extension (160) surrounding the first electrode (152). The first electrode (152) is configured to receive a workpiece and has an associated first electrode area. The power generator (154) is operatively coupled to the first electrode (152), and the power generator (154) is configured to generate RF power that is communicated to the first electrode (152). The second electrode (156) is disposed at a distance from the first electrode (152). The second electrode (156) is configured to provide a complete electrical circuit for RF power communicated from the first electrode (152). Additionally, the second electrode (156) has a second electrode area that is greater than the first electrode area. At least one confinement ring (166) is configured to assist confine the plasma.

5. 发明申请

WO2004055855A3 GAS DISTRIBUTION APPARATUS AND METHOD FOR UNIFORM ETCHING 审中-公开
标题翻译：气体分布装置和均匀蚀刻的方法
公开(公告)号：WO2004055855A3
公开(公告)日：2005-01-06
申请号：PCT/US0338617
申请日：2003-12-04
申请人： LAM RES CORP , LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
发明人： LARSON DEAN J , KADKHODAYAN BABAK , WU DI , TAKESHITA KENJI , YEN BI-MING , SU XINGCAI , DENTY WILLIAM M JR , LOEWENHARDT PETER
IPC分类号： C23F1/00 , G05D7/06 , H01J37/00 , H01J37/32 , H01L21/306 , H01L21/311
CPC分类号： G05D7/0664 , H01J37/3244 , H01L21/31116
摘要： An apparatus for providing different gases to different zones of a processing chamber comprises a gas supply (1880) for providing an etching gas flow; a flow splitter (1831, 1836 - 1840) in fluid connection with the gas supply for splitting the etching gas flow from the gas supply into a plurality of legs (1812, 1814, 1833, 1834) and a tuning gas system (1860- 1862, 1865 - 1868) in fluid connection to at least one of the legs of the plurality of legs (1812, 1814).
摘要翻译：用于向处理室的不同区域提供不同气体的装置包括用于提供蚀刻气体流的气体供应源（1880）与气体供应流体连接的分流器（1831,1836-1840），用于将来自气体供应的蚀刻气体流分解成多个腿部（1812,1814,1833,1834）和调节气体系统（1860-1862），1865-1868）与所述多个腿部（1812,1814）中的至少一个腿流体连接。

6. 发明公开

EP1706898A4 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 有权转让
标题翻译：温度保护措施HEISSRAND-RINGBAUGRUPPE ZUR VERRINGERUNG DES PLASMAREAKTOR-ÄTZRATENDRIFTENS
公开(公告)号：EP1706898A4
公开(公告)日：2010-01-20
申请号：EP04818010
申请日：2004-12-10
申请人： LAM RES CORP
发明人： FISCHER ANDREAS , LOEWENHARDT PETER
IPC分类号： H01L21/306 , B24B5/00 , B24B29/00 , B24B37/04 , B24B41/06 , C23F1/02 , H01J37/32 , H01L21/00 , H01L21/687
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069

7. 发明申请

WO2005050700A3 LINE EDGE ROUGHNESS REDUCTION FOR TRENCH ETCH 审中-公开
标题翻译：线边缘粗糙度减少
公开(公告)号：WO2005050700A3
公开(公告)日：2005-12-01
申请号：PCT/US2004036746
申请日：2004-11-03
申请人： LAM RES CORP , WAGGANER ERIC , ZHU HELEN H , LE DANIEL , LOEWENHARDT PETER
发明人： WAGGANER ERIC , ZHU HELEN H , LE DANIEL , LOEWENHARDT PETER
IPC分类号： H01L20060101 , H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802
摘要： A method for etching a trench (314, Fig. 3B) to a trench depth (318, Fig. 3B) in a dielectric layer (308, Fig. 3B) over a substrate (304, Fig. 3B) is provided. An ARC (310, Fig. 3B) is applied over the dielectric layer (308, Fig. 3B). A photoresist mask (312, Fig. 3B) is formed on the ARC (310, Fig. 3B), where the photoresist mask has a thickness. The ARC is etched through. A trench (314, Fig. 3B) is etched into the dielectric layer with a dielectric to photoresist etch selectivity between 1:1 and 2:1.
摘要翻译：提供了一种用于在衬底（304，图3B）上的介电层（图3B中的308）蚀刻沟槽（314，图3B）到沟槽深度（318，图3B）的方法。将ARC（图3B）310施加在电介质层（图3B的308）上。在ARC（310，图3B））上形成光致抗蚀剂掩模（312，图3B），其中光致抗蚀剂掩模具有厚度。 ARC蚀刻通过。在介质层中蚀刻具有介于1：1和2：1之间的光致抗蚀剂蚀刻选择性的沟槽（314，图3B）。

8. 发明申请

WO2004003963A3 PLASMA PROCESSOR WITH ELECTRODE SIMULTANEOUSLY RESPONSIVE TO PLURAL FREQUENCIES 审中-公开
标题翻译：电极处理器，电极同时响应多种频率
公开(公告)号：WO2004003963A3
公开(公告)日：2004-07-22
申请号：PCT/US0319366
申请日：2003-06-20
申请人： LAM RES CORP , VAHEDI VAHID , LOEWENHARDT PETER , ELLINGBOE BERT , KUTHI ANDY , FISCHER ANDREAS
发明人： VAHEDI VAHID , LOEWENHARDT PETER , ELLINGBOE BERT , KUTHI ANDY , FISCHER ANDREAS
IPC分类号： H05H1/46 , C23C16/505 , H01J37/32 , H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.
摘要翻译：处理工件的真空室中的等离子体由包括第一电极同时响应于第一和第二RF频率的功率的第一电极和直流接地第二电极之间的等离子体约束体积界定。直流接地延伸部基本上与第一电极对准。在第一频率处的相当大的功率百分比被耦合到包括第一和第二电极而不是扩展的路径，而在第二频率处的相当大的功率百分比耦合到包括第一电极和延伸的路径，而不是第二频率的路径电极。施加到第一电极的第一和第二频率处的相对功率的改变控制第一电极的直流偏置电压。

9. 发明申请

WO2005059962A3 TEMPERATURE CONTROLLED HOT EDGE RING ASSEMBLY FOR REDUCING PLASMA REACTOR ETCH RATE DRIFT 审中-公开
标题翻译：温度控制热边缘组件，用于降低等离子体反应器蚀刻速率
公开(公告)号：WO2005059962A3
公开(公告)日：2006-02-23
申请号：PCT/US2004041768
申请日：2004-12-10
申请人： LAM RES CORP , FISCHER ANDREAS , LOEWENHARDT PETER
发明人： FISCHER ANDREAS , LOEWENHARDT PETER
IPC分类号： H01J37/32 , H01L21/00 , H01L21/687 , H01L21/306 , B24B5/00 , B24B7/22 , B24B29/00 , B24B37/04 , B24B41/06 , C23F1/02
CPC分类号： H01L21/68735 , H01J37/32642 , H01L21/67069
摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.
摘要翻译：适于围绕等离子体反应室中的衬底支撑件的温度控制的热边缘环组件。组件包括导电下环，陶瓷中间环和上环。中间环覆盖在下环上并且适于经由下环连接到RF电极。上环覆盖中间环，并且具有暴露于等离子体反应室内部的上表面。

10. 发明申请

WO2004102638A3 RF PULSING OF A NARROW GAP CAPACITIVELY COUPLED REACTOR 审中-公开
标题翻译：窄带隙电容耦合反应器的射频脉冲
公开(公告)号：WO2004102638A3
公开(公告)日：2005-07-28
申请号：PCT/US2004013707
申请日：2004-04-29
申请人： LAM RES CORP , LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
发明人： LOEWENHARDT PETER , SRINIVASAN MUKUND , FISCHER ANDREAS
IPC分类号： H01J37/32
CPC分类号： H01J37/32137 , H01J37/32082 , H01J37/32165
摘要： An apparatus for providing a plasma etch of a layer over a wafer is provided, comprising a capacitively coupled process chamber (100), a gas source (110), a first (104) and a second electrode (108) within the process chamber. A first radio frequency power source (144) is electrically connected to at least one of the first and second electrodes, where the first radio frequency power source provides radio frequency power. A second radio frequency power source (148) is electrically connected to at least one of the first and second electrodes. A first modulation control (133) is connected to the first radio frequency power source, to provide a controlled modulation of the first radio frequency power source.
摘要翻译：提供了一种用于在晶片上提供层的等离子体蚀刻的装置，其包括处理室内的电容耦合处理室（100），气体源（110），第一（104）和第二电极（108）。第一射频电源（144）电连接到第一和第二电极中的至少一个，其中第一射频电源提供射频功率。第二射频电源（148）电连接到第一和第二电极中的至少一个。第一调制控制（133）连接到第一射频电源，以提供对第一射频电源的受控调制。

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