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1. 发明申请

WO2008049024B1 METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS 审中-公开
标题翻译：用于调整一组等离子体处理步骤的方法和设备
公开(公告)号：WO2008049024B1
公开(公告)日：2008-06-05
申请号：PCT/US2007081682
申请日：2007-10-17
申请人： LAM RES CORP , VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
发明人： VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
IPC分类号： H01L21/3065
CPC分类号： H01L21/32136 , C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals and ions in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate; positioning a movable uniformity ring around the substrate, wherein a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了调整一组等离子体处理步骤的方法。该方法包括在等离子体处理系统的等离子体反应器中撞击包含中性粒子和离子的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻衬底上的一组层; 将可移动均匀环定位在所述衬底周围，其中所述均匀环的底表面与所述衬底的顶表面的高度大致相同; 并在等离子体处理系统的等离子体反应器中撞击基本上由中性物质组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的该组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

2. 发明申请

WO2006036753A3 METHODS AND APPARATUS FOR TUNING A SET OF PLASMA PROCESSING STEPS 审中-公开
标题翻译：用于调整一套等离子体处理步骤的方法和装置
公开(公告)号：WO2006036753A3
公开(公告)日：2007-01-25
申请号：PCT/US2005034034
申请日：2005-09-21
申请人： LAM RES CORP , VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
发明人： VAHEDI VAHID , DAUGHERTY JOHN E , SINGH HARMEET , CHEN ANTHONY
IPC分类号： B44C1/22 , C23F1/00 , H01L21/00
CPC分类号： C03C15/00 , C03C23/006 , H01J37/32623 , H01J37/32642 , H01L21/32136
摘要： In a plasma processing system, a method of tuning of a set of plasma processing steps is disclosed. The method includes striking a first plasma comprising neutrals (320a) and ions (320b) in a plasma reactor of the plasma processing system. The method also includes etching in a first etching step a set of layers on a substrate (303); positioning a movable uniformity ring (302) around the substrate, including an opening (308) that is configured for directing species of plasma towards chuck (314), wherein, a bottom surface of the uniformity ring is about the same height as a top surface of the substrate; and striking a second plasma consisting essentially of neutrals in the plasma reactor of the plasma processing system. The method further includes etching in a second etching step the set of layers on the substrate; and wherein the etching in the first step and the etching in the second step are substantially uniform.
摘要翻译：在等离子体处理系统中，公开了一组等离子体处理步骤的调谐方法。该方法包括在等离子体处理系统的等离子体反应器中击打包括中性粒子（320a）和离子（320b）的第一等离子体。该方法还包括在第一蚀刻步骤中蚀刻在衬底（303）上的一组层; 将可移动均匀环（302）定位在所述基底周围，包括构造成用于将等离子体的种类引导到卡盘（314）的开口（308），其中，所述均匀环的底表面与顶表面大约相同的高度的基底; 并且在等离子体处理系统的等离子体反应器中击打基本上由中性体组成的第二等离子体。该方法还包括在第二蚀刻步骤中蚀刻衬底上的这组层; 并且其中第一步骤中的蚀刻和第二步骤中的蚀刻基本均匀。

3. 发明申请

WO02091453A9 HIGH PRESSURE WAFER-LESS AUTO CLEAN FOR ETCH APPLICATIONS 审中-公开
标题翻译：高压无刷自动清洗用于蚀刻应用
公开(公告)号：WO02091453A9
公开(公告)日：2003-07-03
申请号：PCT/US0214102
申请日：2002-05-03
申请人： LAM RES CORP , SINGH HARMEET , DAUGHERTY JOHN E , ULLAL SAURABH J
发明人： SINGH HARMEET , DAUGHERTY JOHN E , ULLAL SAURABH J
IPC分类号： B08B7/00 , H01J37/32 , H01L21/3213
CPC分类号： H01J37/32467 , B08B7/00 , H01J37/321 , H01J37/32862 , H01J37/32935
摘要： A method for cleaning a processing chamber is provided. The method initiates with introducing a fluorine containing gaseous mixture into a processing chamber. Then, a plasma is created from the fluorine containing gaseous mixture in the processing chamber. Next, a chamber pressure is established that corresponds to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue. A method for substantially eliminating residual aluminum fluoride particles deposited by an in-situ cleaning process for a semiconductor processing chamber and a plasma processing system for executing an in-situ cleaning process are also provided.
摘要翻译：提供了一种用于清洁处理室的方法。该方法通过将含氟气体混合物引入处理室来启动。然后，从处理室中的含氟气体混合物产生等离子体。接下来，建立对应于阈值离子能量的室压力，其中等离子体的离子清洁处理室的内表面而不留下残留物。还提供了用于基本上消除通过用于半导体处理室的原位清洁工艺沉积的残余氟化铝颗粒的方法和用于执行原位清洁工艺的等离子体处理系统。

4. 发明申请

WO2006012021A3 METHODS AND APPARATUS FOR OPTIMAL TEMPERATURE CONTROL IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：一种等离子体处理系统中最佳温度控制的方法与装置
公开(公告)号：WO2006012021A3
公开(公告)日：2006-09-28
申请号：PCT/US2005021202
申请日：2005-06-14
申请人： LAM RES CORP , SALDANA MIGUEL A , SHARPLESS LEONARD J , DAUGHERTY JOHN E
发明人： SALDANA MIGUEL A , SHARPLESS LEONARD J , DAUGHERTY JOHN E
IPC分类号： C23C16/00 , C23C16/505 , C23C16/52 , F25B29/00 , F28F27/00 , H01L21/3065
CPC分类号： H01L21/67248 , F28D1/06 , F28D2021/0077 , F28F2013/006 , H01J37/321 , H01J37/32522 , H01L21/67069
摘要： A temperature control device (308) for controlling temperature of an upper chamber (312) of a plasma processing apparatus (300) is described. The temperature control device includes a thermally conductive body (334) having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers (344, 348, 350, 352) in thermal communication with the thermally conductive body wherein at least one layer is a heating element (350); and a cooling element (326) connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber, a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.
摘要翻译：对用于控制等离子体处理装置（300）的上部室（312）的温度的温度控制装置（308）进行说明。温度控制装置包括导热体（334），其具有可拆卸地与等离子体处理装置的上室连接并与热连通的外表面和外表面。温度控制装置还包括与导热体热连通的多个热界面层（344,348,350,352），其中至少一层是加热元件（350）; 以及与所述带状导热体连接并与所述等离子体处理设备的上室热耦合的冷却元件（326），其中所述冷却元件被配置为导入流体介质。温度控制装置还包括用于感测上部室的温度的至少一个温度传感器，用于控制加热元件和冷却元件的温度控制单元; 以及用于将温度控制装置固定到上室的闭锁机构。

5. 发明申请

WO2006039211A3 CORROSION RESISTANT APPARATUS FOR CONTROL OF A MULTI-ZONE NOZZLE IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于控制等离子体处理系统中的多个喷嘴的耐腐蚀设备
公开(公告)号：WO2006039211A3
公开(公告)日：2007-01-11
申请号：PCT/US2005034239
申请日：2005-09-23
申请人： LAM RES CORP , HAO FANGLI , DAUGHERTY JOHN E , TAPPAN JAMES
发明人： HAO FANGLI , DAUGHERTY JOHN E , TAPPAN JAMES
IPC分类号： C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32082
摘要： An integrated gas flow control assembly for connecting a gas distribution system to a multi-zone injector which includes: a first set of channels connecting the gas distribution system to a first valve assembly, a second valve assembly, a third flow assembly, and a fourth flow assembly; a second set of channels for connecting the third flow assembly and the first valve assembly to a first multi-zone injector zone; and a third set of channels for connecting the fourth flow assembly and the second valve assembly to a second multi-zone injector zone. If the first valve assembly is closed, a first multi-zone injector zone flow rate is about the flow rate through the third flow assembly, and if the second valve assembly is closed, a second multi-zone injector zone flow rate is about the flow rate through the fourth flow assembly.
摘要翻译：一种用于将气体分配系统连接到多区域喷射器的集成气体流量控制组件，其包括：将气体分配系统连接到第一阀组件，第二阀组件，第三流量组件和第四组件的第一组通道流量装配第二组通道，用于将第三流动组件和第一阀组件连接到第一多区域注射器区域; 以及用于将第四流动组件和第二阀组件连接到第二多区域喷射器区域的第三组通道。如果第一阀组件被关闭，则第一多区域喷射器区域流速约为通过第三流量组件的流速，并且如果第二阀组件关闭，则第二多区域喷射器区域流速约为流量速率通过第四流量组件。

6. 发明申请

WO2004108617A3 METHODS OF FINISHING QUARTZ GLASS SURFACES AND COMPONENTS MADE BY THE METHODS 审中-公开
标题翻译：方法完成石英玻璃表面和组分的方法
公开(公告)号：WO2004108617A3
公开(公告)日：2005-02-03
申请号：PCT/US2004016857
申请日：2004-05-28
申请人： LAM RES CORP , KIEHLBAUCH MARK W , DAUGHERTY JOHN E
发明人： KIEHLBAUCH MARK W , DAUGHERTY JOHN E
IPC分类号： C03C15/00 , C03C19/00 , C03C23/00
CPC分类号： C03C23/0075 , C03C15/00 , C03C19/00 , C03C2204/08 , Y10S438/905 , Y10S438/906
摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.
摘要翻译：提供表面处理用于等离子体处理装置的部件的方法。该组件包括至少一个等离子体暴露的石英玻璃表面。该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。石英玻璃密封面的组件也可以通过这种方法完成。等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。

7. 发明申请

WO2004003962A2 PRODUCTIVITY ENHANCING THERMAL SPRAYED YTTRIA-CONTAINING COATING FOR PLASMA REACTOR 审中-公开
标题翻译：生产率提高等离子体反应器的热喷涂含YTIA的涂料
公开(公告)号：WO2004003962A2
公开(公告)日：2004-01-08
申请号：PCT/US0318502
申请日：2003-06-12
申请人： LAM RES CORP , O'DONNELL ROBERT J , DAUGHERTY JOHN E
发明人： O'DONNELL ROBERT J , DAUGHERTY JOHN E
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32477 , H01J37/3255
摘要： Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.
摘要翻译：半导体处理装置的组件包括在喷射的含氧化钇的涂层中，其在等离子体气氛中提供侵蚀，腐蚀和/或耐腐蚀侵蚀性。涂层可以保护基材免受物理和/或化学侵蚀。

8. 发明申请

WO02054453A9 ZIRCONIA TOUGHENED CERAMIC COMPONENTS AND COATINGS IN SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译： ZIRCONIA半导体加工设备中的粗化陶瓷组件和涂层及其制造方法
公开(公告)号：WO02054453A9
公开(公告)日：2003-08-21
申请号：PCT/US0143149
申请日：2001-11-21
申请人： LAM RES CORP , O'DONNELL ROBERT J , CHANG CHRISTOPHER C , DAUGHERTY JOHN E
发明人： O'DONNELL ROBERT J , CHANG CHRISTOPHER C , DAUGHERTY JOHN E
IPC分类号： C23C30/00 , C23C14/08 , C23C16/40 , H01J37/32 , H01L21/3065 , H01L21/00 , C23C16/44
CPC分类号： H01J37/32477 , C23C14/083 , C23C16/405 , Y10T428/265
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.
摘要翻译：诸如等离子体室的半导体加工设备的耐腐蚀部件包括氧化锆增韧陶瓷材料作为部件的最外表面。该组件可以完全由陶瓷材料制成，或者陶瓷材料可以作为涂层提供在诸如铝或铝合金，不锈钢或难熔金属的基底上。氧化锆增韧陶瓷可以是四方晶氧化锆多晶（TZP）材料，部分稳定的氧化锆（PSZ）或氧化锆分散体增韧陶瓷（ZTC）如氧化锆增韧的氧化铝（四方晶氧化锆颗粒分散在Al2O3中）。在陶瓷氧化锆增韧涂层的情况下，可以在组件和陶瓷涂层之间提供一个或多个中间层。为了促进陶瓷涂层的粘合，可以在沉积陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

9. 发明申请

WO02054454A2 DIAMOND COATINGS ON REACTOR WALL AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：反应器壁上的金刚石涂层及其制造方法
公开(公告)号：WO02054454A2
公开(公告)日：2002-07-11
申请号：PCT/US0143153
申请日：2001-11-21
申请人： LAM RES CORP , O'DONNELL ROBERT J , DAUGHERTY JOHN E , CHANG CHRISTOPHER C
发明人： O'DONNELL ROBERT J , DAUGHERTY JOHN E , CHANG CHRISTOPHER C
IPC分类号： C23C14/06 , B01J19/02 , C23C16/02 , C23C16/27 , C23C16/44 , C23C30/00 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32495 , B01J19/0073 , B01J19/02 , B01J2219/0231 , B01J2219/025 , C23C16/0272 , C23C16/27 , C23C16/4404 , Y10T428/26 , Y10T428/30 , Y10T428/31678
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.
摘要翻译：诸如等离子体室的半导体加工设备的耐腐蚀部件包括含金刚石的表面及其制造方法。

10. 发明公开

KR20200130473A MEMS 코리올리 가스 유량 제어기 审中-公开
公开(公告)号：KR20200130473A
公开(公告)日：2020-11-18
申请号：KR20207031652
申请日：2019-04-02
申请人： LAM RES CORP
发明人： SHAREEF IQBAL A , SMITH DENNIS , DAUGHERTY JOHN E
IPC分类号： G01F1/48 , G01F1/84
摘要： 유체전달시스템은 N 개의제 1 밸브들을포함한다. N 개의제 1 밸브들의유입구들은 N 개의가스소스들에각각유체적으로연결되고, 여기서 N은 0보다큰 정수이다. N 개의질량유량제어기들은 N 개의제 1 밸브들중 대응하는밸브의유출구와유체로연통하는유입구를갖는 MEMS (microelectromechanical) 코리올리 (Coriolis) 유량센서를포함한다. 제 2 밸브는 MEMS 코리올리유량센서의유출구와유체로연통하는유입구및 프로세싱챔버에배치된기판을처리하기위해유체를공급하는유출구를갖는다. 제어기는 MEMS 코리올리유량센서와통신하고 MEMS 코리올리유량센서를통해흐르는유체의질량유량레이트 (mass flow rate) 및밀도중 적어도하나를결정하도록구성된다.

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