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1. 发明申请

WO02054453A9 ZIRCONIA TOUGHENED CERAMIC COMPONENTS AND COATINGS IN SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译： ZIRCONIA半导体加工设备中的粗化陶瓷组件和涂层及其制造方法
公开(公告)号：WO02054453A9
公开(公告)日：2003-08-21
申请号：PCT/US0143149
申请日：2001-11-21
申请人： LAM RES CORP , O'DONNELL ROBERT J , CHANG CHRISTOPHER C , DAUGHERTY JOHN E
发明人： O'DONNELL ROBERT J , CHANG CHRISTOPHER C , DAUGHERTY JOHN E
IPC分类号： C23C30/00 , C23C14/08 , C23C16/40 , H01J37/32 , H01L21/3065 , H01L21/00 , C23C16/44
CPC分类号： H01J37/32477 , C23C14/083 , C23C16/405 , Y10T428/265
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.
摘要翻译：诸如等离子体室的半导体加工设备的耐腐蚀部件包括氧化锆增韧陶瓷材料作为部件的最外表面。该组件可以完全由陶瓷材料制成，或者陶瓷材料可以作为涂层提供在诸如铝或铝合金，不锈钢或难熔金属的基底上。氧化锆增韧陶瓷可以是四方晶氧化锆多晶（TZP）材料，部分稳定的氧化锆（PSZ）或氧化锆分散体增韧陶瓷（ZTC）如氧化锆增韧的氧化铝（四方晶氧化锆颗粒分散在Al2O3中）。在陶瓷氧化锆增韧涂层的情况下，可以在组件和陶瓷涂层之间提供一个或多个中间层。为了促进陶瓷涂层的粘合，可以在沉积陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

2. 发明申请

WO02054454A2 DIAMOND COATINGS ON REACTOR WALL AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：反应器壁上的金刚石涂层及其制造方法
公开(公告)号：WO02054454A2
公开(公告)日：2002-07-11
申请号：PCT/US0143153
申请日：2001-11-21
申请人： LAM RES CORP , O'DONNELL ROBERT J , DAUGHERTY JOHN E , CHANG CHRISTOPHER C
发明人： O'DONNELL ROBERT J , DAUGHERTY JOHN E , CHANG CHRISTOPHER C
IPC分类号： C23C14/06 , B01J19/02 , C23C16/02 , C23C16/27 , C23C16/44 , C23C30/00 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32495 , B01J19/0073 , B01J19/02 , B01J2219/0231 , B01J2219/025 , C23C16/0272 , C23C16/27 , C23C16/4404 , Y10T428/26 , Y10T428/30 , Y10T428/31678
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.
摘要翻译：诸如等离子体室的半导体加工设备的耐腐蚀部件包括含金刚石的表面及其制造方法。

3. 发明申请

WO2004003962A2 PRODUCTIVITY ENHANCING THERMAL SPRAYED YTTRIA-CONTAINING COATING FOR PLASMA REACTOR 审中-公开
标题翻译：生产率提高等离子体反应器的热喷涂含YTIA的涂料
公开(公告)号：WO2004003962A2
公开(公告)日：2004-01-08
申请号：PCT/US0318502
申请日：2003-06-12
申请人： LAM RES CORP , O'DONNELL ROBERT J , DAUGHERTY JOHN E
发明人： O'DONNELL ROBERT J , DAUGHERTY JOHN E
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32477 , H01J37/3255
摘要： Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.
摘要翻译：半导体处理装置的组件包括在喷射的含氧化钇的涂层中，其在等离子体气氛中提供侵蚀，腐蚀和/或耐腐蚀侵蚀性。涂层可以保护基材免受物理和/或化学侵蚀。

4. 发明申请

WO9967443A9 METHODS FOR ETCHING AN ALUMINUM-CONTAINING LAYER 审中-公开
标题翻译：用于蚀刻含铝层的方法
公开(公告)号：WO9967443A9
公开(公告)日：2000-06-08
申请号：PCT/US9914026
申请日：1999-06-22
申请人： LAM RES CORP
发明人： O'DONNELL ROBERT J
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065 , H01L21/3213
CPC分类号： H01L21/32136 , C23F4/00 , Y10T428/12028 , Y10T428/12493 , Y10T428/249954
摘要： A method for etching selected portions of an aluminum-containing layer of a layer stack that is disposed on a substrate. The aluminum-containing layer is disposed below a photoresist mask having a pattern thereon. The method includes providing a plasma processing chamber and positioning the substrate having thereon the layer stack, including the aluminum containing layer and the photoresist mask, within the plasma processing chamber. The method further includes flowing an etchant source gas that comprises HCl, a chlorine-containing source gas, and an oxygen-containing source gas into the plasma processing chamber. The flow rate of the oxygen-containing source gas is less than about 20 percent of a total flow rate of the etchant source gas. There is also included striking a plasma out of the etchant source gas, wherein the plasma is employed to etch at least partially through the aluminum-containing layer.
摘要翻译：一种用于蚀刻设置在基板上的层叠体的含铝层的选定部分的方法。含铝层设置在其上具有图案的光致抗蚀剂掩模下方。该方法包括提供等离子体处理室并将其上具有包括铝包层和光刻胶掩模的层堆叠的衬底定位在等离子体处理室内。该方法还包括将包含HCl，含氯源气体和含氧源气体的蚀刻剂源气体流入等离子体处理室。含氧源气体的流量小于蚀刻剂源气体的总流量的约20％。还包括从蚀刻剂源气体中冲出等离子体，其中使用等离子体至少部分地蚀刻通过含铝层。

5. 发明专利

JP2006041504A Separation and confinement of meniscus by barrier with non-affinity 有权
标题翻译：隔离和约束非洲人的障碍
公开(公告)号：JP2006041504A
公开(公告)日：2006-02-09
申请号：JP2005189340
申请日：2005-06-29
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： O'DONNELL ROBERT J , ANDERSON THOMAS W
IPC分类号： H01L21/304 , C23F1/24 , F26B3/00 , F26B7/00 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67051 , H01L21/02057 , H01L21/67017 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , H01L21/67075 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a technique for efficiently supplying and removing a fluid to and from a wafer surface, while reducing contamination and the cost of processing wafers. SOLUTION: In one of many embodiments, there is provided a method for processing a substrate. The method has a step of forming a first fluid meniscus and a second fluid meniscus on the surface of the substrate. At this time, the first fluid meniscus is approximately adjacent to the second fluid meniscus. Moreover, this meniscus has a step of separating the first fluid meniscus from the second fluid meniscus by a barrier. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于有效地向晶片表面提供流体和从晶片表面去除流体的设备和技术，同时减少处理晶片的污染和成本。解决方案：在许多实施例中的一个中，提供了一种用于处理衬底的方法。该方法具有在基板的表面上形成第一流体弯液面和第二流体弯液面的步骤。此时，第一流体弯液面大致与第二流体弯液面相邻。此外，该弯液面具有通过屏障将第一流体弯液面与第二流体弯液面分离的步骤。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2010153881A Low contamination component for semiconductor processing apparatus and method for making the same 审中-公开
标题翻译：半导体加工装置的低污染成分及其制造方法
公开(公告)号：JP2010153881A
公开(公告)日：2010-07-08
申请号：JP2010014638
申请日：2010-01-26
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： O'DONNELL ROBERT J
IPC分类号： H01L21/3065 , C23C4/02 , C23C4/10 , C23C14/56 , C23C16/44 , C23C28/00 , C23C30/00 , H01J37/32 , H01L21/205 , H01L21/683 , H05H1/46
CPC分类号： H01J37/32495 , C23C4/02 , C23C4/10 , C23C14/564 , C23C16/4404 , C23C28/00 , C23C28/042 , C23C28/044 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/3455 , C23C28/347 , C23C30/00 , Y10T428/26 , Y10T428/263 , Y10T428/264 , Y10T428/265
摘要： PROBLEM TO BE SOLVED: To provide ceramic materials to provide extended service lives of plasma exposed components of semiconductor processing apparatus. SOLUTION: Components of semiconductor processing apparatus are formed at least partially of erosion, corrosion and/or corrosion-erosion resistant ceramic materials. Exemplary ceramic materials include at least one oxide, nitride, boride, carbide and/or fluoride of hafnium, strontium, lanthanum oxide and/or dysprosium. The ceramic materials are applied as coatings over substrates to form composite components, or formed into monolithic bodies. The coatings protect substrates from physical and/or chemical attack. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供陶瓷材料以提供半导体加工设备的等离子体暴露部件的延长的使用寿命。解决方案：半导体加工设备的部件至少部分地形成有侵蚀，腐蚀和/或耐腐蚀腐蚀的陶瓷材料。示例性陶瓷材料包括铪，锶，氧化镧和/或镝中的至少一种氧化物，氮化物，硼化物，碳化物和/或氟化物。陶瓷材料作为涂层涂覆在基材上以形成复合材料部件，或形成单体。涂层可保护基材免受物理和/或化学侵蚀。版权所有（C）2010，JPO＆INPIT

7. 发明专利

JP2010283361A Coating film containing thermal sprayed yttria for plasma reactor capable of enhancing productivity 审中-公开
标题翻译：含有能够提高生产率的等离子体反应器的热喷涂YTTRIA的涂膜
公开(公告)号：JP2010283361A
公开(公告)日：2010-12-16
申请号：JP2010153473
申请日：2010-07-05
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： O'DONNELL ROBERT J , DAUGHERTY JOHN E
IPC分类号： H01L21/3065 , H05H1/46 , C23C16/44 , H01J37/32 , H01L21/205
CPC分类号： H01J37/32467 , C23C16/4404 , H01J37/32477 , H01J37/3255
摘要： PROBLEM TO BE SOLVED: To provide a device component capable of minimizing erosive and corrosive properties, and contamination by a particle and/or metal in a plasma environment in a reactor, and having sufficiently high erosion resistance and corrosion resistance, including consumables and other components.
SOLUTION: A constitutive element for a semiconductor treating device includes a coating film containing thermal sprayed yttria for imparting the erosion resistance, the corrosion resistance and/or the corrosion-erosion resistance in a plasma atmosphere. The coating film protects a substrate from physical and/or chemical attacks.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够最小化腐蚀性和腐蚀性能的装置部件，以及反应器中等离子体环境中的颗粒和/或金属的污染，并且具有足够高的耐侵蚀性和耐腐蚀性，包括消耗品和其他组件。解决方案：半导体处理装置的构成元件包括含有热喷氧化钇的涂膜，用于赋予等离子体气氛中的耐腐蚀性，耐腐蚀性和/或耐腐蚀侵蚀性。涂膜可保护基材免受物理和/或化学侵蚀。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2006073998A Proximity type proximity processing head 有权
标题翻译：临近型接近加工头
公开(公告)号：JP2006073998A
公开(公告)日：2006-03-16
申请号：JP2005189330
申请日：2005-06-29
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： SMITH MICHAEL G R , RAVKIN MICHAEL , O'DONNELL ROBERT J
IPC分类号： H01L21/304 , C23C18/31 , C23F1/08 , C25D7/12 , C25D21/00 , F26B5/04 , F26B7/00 , F26B13/30 , G03F7/16 , H01L21/00 , H01L21/306
CPC分类号： H01L21/67051 , H01L21/67017 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , H01L21/67075 , H01L21/6708
摘要： PROBLEM TO BE SOLVED: To provide equipment and a method which effectively perform the supply and elimination of a flow on the surface of a wafer while reducing smearing on the wafer and reducing treatment cost. SOLUTION: In one of many embodiments, a method for treating a substrate and a proximity type proximity processing head used for the method are disclosed. The method includes a process for generating a first fluid meniscus and a second fluid meniscus which at least surrounds the first fluid meniscus partially. The first fluid meniscus and the second fluid meniscus are generated on the surface of the substrate. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供有效地执行晶片表面上的流动的供应和消除的设备和方法，同时减少晶片上的污迹并降低处理成本。解决方案：在许多实施例中的一个中，公开了一种用于处理基板的方法和用于该方法的接近型邻近处理头。该方法包括用于产生至少围绕第一流体弯月面的第一流体弯液面和第二流体弯月面的方法。在基板的表面上产生第一流体弯液面和第二流体弯液面。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2006049858A Apparatus and method for using meniscus in substrate processing 有权
标题翻译：在基板加工中使用曼尼斯卡的装置和方法
公开(公告)号：JP2006049858A
公开(公告)日：2006-02-16
申请号：JP2005189334
申请日：2005-06-29
申请人： Lam Res Corp , ラムリサーチコーポレーションLam Research Corporation
发明人： O'DONNELL ROBERT J
IPC分类号： H01L21/304 , B08B3/00 , B08B5/00 , B08B5/04 , H01L21/00
CPC分类号： H01L21/67051 , B05C5/02 , B05C11/1039 , H01L21/02057 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67063 , H01L21/67075 , H01L21/6708 , Y10S134/902
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for optimizing the control and supply of a fluid to a wafer and processing a substrate reducing the deposition of contamination on the surface of the wafer. SOLUTION: The apparatus has a proximity head proximate to the surface of a substrate in operation. Moreover, the apparatus has an opening communicating with a cavity formed in the proximity head in the surface of the proximity head. The cavity feeds an activator to the surface of the substrate through the opening. The apparatus, moreover, has a plurality of conduits constituted to form a fluid meniscus surrounding the opening on the surface of the substrate on the surface of the proximity head. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于优化对晶片的流体的控制和供应以及处理衬底的装置，以减少晶片表面上的污染物的沉积。解决方案：该设备在操作中具有靠近基板表面的接近头。此外，该装置具有与形成在邻近头部的表面中的邻近头部中的空腔相通的开口。空腔通过开口将活化剂供给到基板的表面。此外，该装置具有多个导管，其被构造成在邻近头部的表面上形成围绕基板表面上的开口的流体弯液面。版权所有（C）2006，JPO＆NCIPI

10. 发明授权

US3108274A Microwave target azimuth simulator 失效
标题翻译：微波目标方位模拟器
公开(公告)号：US3108274A
公开(公告)日：1963-10-22
申请号：US77926258
申请日：1958-12-09
申请人： LEO YOUNT , O'DONNELL ROBERT J
发明人： LEO YOUNT , O'DONNELL ROBERT J
IPC分类号： G01S7/40 , G06G7/78
CPC分类号： G01S7/4052 , G01S2007/4082 , G06G7/78

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