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1. 发明申请

WO2011026127A3 A LOCAL PLASMA CONFINEMENT AND PRESSURE CONTROL ARRANGEMENT AND METHODS THEREOF 审中-公开
标题翻译：本地等离子体制约和压力控制装置及其方法
公开(公告)号：WO2011026127A3
公开(公告)日：2011-06-03
申请号：PCT/US2010047376
申请日：2010-08-31
申请人： LAM RES CORP , DHINDSA RAJINDER , KELLOG MIKE , KADKODYAN BABAK , BAILEY ANDREW
发明人： DHINDSA RAJINDER , KELLOG MIKE , KADKODYAN BABAK , BAILEY ANDREW
IPC分类号： H05H1/46 , C23C16/50 , H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32623
摘要： An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset.
摘要翻译：提供了一种用于在处理室衬底处理中执行压力控制的装置。该装置包括至少围绕限制室容积配置的外围环，该限定室容积被配置为在衬底处理期间维持用于刻蚀衬底的等离子体。周边环包括多个狭槽，其被构造成至少在衬底处理期间从受限腔体积中排出经处理的副产物气体。该布置还包括导电控制环，该导电控制环位于外围环旁边并且被配置为包括多个狭槽。通过相对于外围环移动导电控制环来实现压力控制，使得外围环上的第一槽和导电控制环上的第二槽相对于彼此在零偏移到全偏移的范围内彼此偏移。

2. 发明申请

WO2010117969A3 MODULATED MULTI-FREQUENCY PROCESSING METHOD 审中-公开
标题翻译：调制多频处理方法
公开(公告)号：WO2010117969A3
公开(公告)日：2011-01-13
申请号：PCT/US2010030019
申请日：2010-04-06
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
发明人： MARAKHTANOV ALEXEI , HUDSON ERIC , DHINDSA RAJINDER , BAILEY ANDREW
IPC分类号： H01L21/3065 , H05H1/24 , H05H1/36
CPC分类号： H01L21/3065 , H01J37/32009 , H01J37/32137 , H01J37/32146 , H01J2237/334 , H01J2237/3348
摘要： A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.
摘要翻译：提供了一种操作处理系统的方法，该处理系统具有布置成接收气体的空间和可操作以在该空间内产生电磁场的电磁场产生部分。所述方法包括向所述空间提供气体，以及利用驱动电位操作所述电磁场产生部分，以在所述空间内产生电磁场，以将所述气体的至少一部分转化为等离子体。作为时间的函数的驱动电位基于第一潜在功能部分和第二电位功能部分。第一潜在功能部分包括具有第一幅度和第一频率的第一连续周期部分。第二电位功能部分包括具有最大振幅部分和最小振幅部分和占空比的第二周期部分。最大幅度部分比最小振幅部分的幅度更大。占空比是最大幅度部分的持续时间与最大振幅部分的持续时间和最小振幅部分的持续时间之和的比率。第二周期部分在最大振幅部分期间另外具有第二频率。第二周期部分的幅度调制被锁相到第一连续周期部分。

3. 发明申请

WO2012018449A3 DUAL PLASMA VOLUME PROCESSING APPARATUS FOR NEUTRAL/ION FLUX CONTROL 审中-公开
标题翻译：用于中性/离子通量控制的双等离子体积处理装置
公开(公告)号：WO2012018449A3
公开(公告)日：2012-04-12
申请号：PCT/US2011041524
申请日：2011-06-22
申请人： LAM RES CORP , DHINDSA RAJINDER , MARAKHATNOV ALEXEI , BAILEY ANDREW D III
发明人： DHINDSA RAJINDER , MARAKHATNOV ALEXEI , BAILEY ANDREW D III
IPC分类号： H01L21/205
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32697 , H01J37/32715 , H01J37/32834 , H01L21/67069 , H01L21/67259 , H01L21/6831 , H01L22/26
摘要： A semiconductor wafer processing apparatus includes a first electrode exposed to a first plasma generation volume, a second electrode exposed to a second plasma generation volume, and a gas distribution unit disposed between the first and second plasma generation volumes. The first electrode is defined to transmit radio frequency (RF) power to the first plasma generation volume, and distribute a first plasma process gas to the first plasma generation volume. The second electrode is defined to transmit RF power to the second plasma generation volume, and hold a substrate in exposure to the second plasma generation volume. The gas distribution unit includes an arrangement of through-holes defined to fluidly connect the first plasma generation volume to the second plasma generation volume. The gas distribution unit also includes an arrangement of gas supply ports defined to distribute a second plasma process gas to the second plasma generation volume.
摘要翻译：半导体晶片处理装置包括暴露于第一等离子体产生体积的第一电极，暴露于第二等离子体产生体积的第二电极和设置在第一和第二等离子体产生体积之间的气体分配单元。第一电极被定义为将射频（RF）功率传送到第一等离子体产生体积，并且将第一等离子体处理气体分配到第一等离子体产生体积。第二电极被定义为将RF功率传送到第二等离子体产生体积，并且保持衬底暴露于第二等离子体产生体积。气体分配单元包括限定为将第一等离子体产生体积流体连接到第二等离子体产生体积的通孔的布置。气体分配单元还包括被定义为将第二等离子体处理气体分配到第二等离子体产生体积的气体供给端口的布置。

4. 发明申请

WO2012018448A3 PLASMA PROCESSING CHAMBER WITH DUAL AXIAL GAS INJECTION AND EXHAUST 审中-公开
标题翻译：具有双轴向气体注射和排气的等离子体处理室
公开(公告)号：WO2012018448A3
公开(公告)日：2012-04-05
申请号：PCT/US2011041522
申请日：2011-06-22
申请人： LAM RES CORP , DHINDSA RAJINDER , MARAKHATNOV ALEXEI , BAILEY ANDREW D III
发明人： DHINDSA RAJINDER , MARAKHATNOV ALEXEI , BAILEY ANDREW D III
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： H01L21/3065 , C23C16/4412 , C23C16/45565 , C23C16/45574 , C23C16/45576 , C23C16/50 , H01J37/32091 , H01J37/32449 , H01J37/32834 , H01L21/31
摘要： An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.
摘要翻译：电极暴露于等离子体产生体积并且被限定为将射频功率传输至等离子体产生体积，并且包括用于保持暴露于等离子体产生体积的基板的上表面。气体分配单元设置在等离子体产生容积上方并且与电极基本平行地定向。气体分配单元包括用于将等离子体处理气体的输入流在基本上垂直于电极的上表面的方向上引导到等离子体产生体积中的气体供给端口的布置。气体分配单元还包括通孔布置，每个通孔延伸穿过气体分配单元以将等离子体生成体积流体连接到排气区域。通孔中的每一个引导来自等离子体产生体积的排气流在基本上垂直于电极上表面的方向上。

5. 发明专利

IL205779A APPARATUS FOR PRODUCING HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 未知
公开(公告)号：IL205779A
公开(公告)日：2011-08-31
申请号：IL20577910
申请日：2010-05-13
申请人： LI LUMIN , LAM RES CORP , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
发明人： LI LUMIN , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

6. 发明专利

IL173861A HIGH ASPECT RATIO ETCH USING MODULATION OF RF POWERS OF VARIOUS FREQUENCIES 未知
公开(公告)号：IL173861A
公开(公告)日：2010-11-30
申请号：IL17386106
申请日：2006-02-21
申请人： LI LUMIN , LAM RES CORP , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
发明人： LI LUMIN , HUDSON ERIC A , RUSU CAMELIA , DHINDSA RAJINDER , SRINIVASAN MUKUND , KOZAKEVICH FELIX
IPC分类号： B23B3/10 , H01J37/32 , H01L21/311 , H01L21/467 , H05H1/46
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

7. 发明申请

WO2012030382A3 SHOWERHEAD ELECTRODE 审中-公开
标题翻译：喷头电极
公开(公告)号：WO2012030382A3
公开(公告)日：2012-08-23
申请号：PCT/US2011001500
申请日：2011-08-25
申请人： LAM RES CORP , DE LA LLERA ANTHONY , MANKIDY PRATIK , KELLOGG MICHAEL C , DHINDSA RAJINDER
发明人： DE LA LLERA ANTHONY , MANKIDY PRATIK , KELLOGG MICHAEL C , DHINDSA RAJINDER
IPC分类号： H01L21/3065 , H01L21/205 , H05H1/46
CPC分类号： H01R13/20
摘要： Abstract A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.
摘要翻译：摘要在等离子体反应室中用于蚀刻半导体衬底的喷头电极，衬垫组件及其组件提供了改进的气体喷射孔图案，定位精度和减少的翘曲，这导致等离子体处理速率的均匀性提高。将内部电极和垫圈组装到支撑构件上的方法包括同时接合凸轮锁。

8. 发明申请

WO2012036923A3 METHODS FOR CONTROLLING PLASMA CONSTITUENT FLUX AND DEPOSITION DURING SEMICONDUCTOR FABRICATION AND APPARATUS FOR IMPLEMENTING THE SAME 审中-公开
标题翻译：用于控制半导体制造期间等离子体成分通量和沉积的方法以及实现该方法的装置
公开(公告)号：WO2012036923A3
公开(公告)日：2012-05-31
申请号：PCT/US2011050379
申请日：2011-09-02
申请人： LAM RES CORP , DHINDSA RAJINDER
发明人： DHINDSA RAJINDER
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , C23F1/08 , G05B19/418 , G05B2219/45031 , G05B2219/45212 , H01J37/32935 , H01L21/31116 , H01L21/31144 , H01L21/67248
摘要： A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time- dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.
摘要翻译：确定在等离子体处理期间施加的时间依赖的衬底温度。基于在给定时间对等离子体成分的粘着系数的控制来确定在任何给定时间的时间依赖的衬底温度。还确定了在等离子体处理期间将施加的上部等离子体边界与衬底之间的时间依赖性温度差。基于在给定时间控制指向衬底的等离子体成分的通量来确定在任何给定时间的随时间变化的温差。取决于时间的衬底温度和时间依赖的温度差以适合由定义的温度控制装置使用的数字格式存储并连接到上部等离子体边界和衬底的直接温度控制。还提供了用于在等离子体处理期间实现上部等离子体边界和衬底温度控制的系统。

9. 发明申请

WO2011026129A3 RADIO FREQUENCY (RF) GROUND RETURN ARRANGEMENTS 审中-公开
标题翻译：无线电频率（RF）地面返回安排
公开(公告)号：WO2011026129A3
公开(公告)日：2011-06-16
申请号：PCT/US2010047379
申请日：2010-08-31
申请人： LAM RES CORP , DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
发明人： DHINDSA RAJINDER , KOSHISHI AKIRA , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32807 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32577 , H01J37/32642
摘要： A radio frequency (RF) ground return arrangement for providing a low impedance RF return path for a RF current within a processing chamber of a plasma processing chamber during processing of a substrate is provided. The RF ground return arrangement includes a set of confinement rings, which is configured to surround a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The RF ground return arrangement also includes a lower electrode support structure. The RF ground return arrangement further includes a RF contact-enabled component, which provides a RF contact between the set of confinement rings and the lower electrode support structure such that the low impedance RF return path facilitates returning the RF current back to an RF source.
摘要翻译：提供射频（RF）接地返回装置，用于在处理基板期间为等离子体处理室的处理室内的RF电流提供低阻抗RF返回路径。 RF接地返回装置包括一组约束环，其被配置为围绕限制室体积，该限制室容积被配置为在衬底处理期间维持用于蚀刻衬底的等离子体。 RF接地返回装置还包括下电极支撑结构。 RF接地返回装置还包括RF接触部件，其在所述一组约束环和下部电极支撑结构之间提供RF接触，使得低阻抗RF返回路径有助于将RF电流返回到RF源。

10. 发明申请

WO2009100345A2 METHODS AND APPARATUS FOR WAFER AREA PRESSURE CONTROL IN AN ADJUSTABLE GAP PLASMA CHAMBER 审中-公开
标题翻译：在可调间隙等离子室中控制晶片面积压力的方法和装置
公开(公告)号：WO2009100345A2
公开(公告)日：2009-08-13
申请号：PCT/US2009033410
申请日：2009-02-06
申请人： LAM RES CORP , DHINDSA RAJINDER , ROGERS JAMES H
发明人： DHINDSA RAJINDER , ROGERS JAMES H
IPC分类号： H05H1/34 , H05H1/36
CPC分类号： H01J37/32642 , H01J37/32449 , H01J37/32623
摘要： In a plasma processing chamber, a method and an arrangement to stabilize pressure are provided. The method includes providing coarse pressure adjustments in an open-loop manner and thereafter providing fine pressure adjustments in a closed-loop manner. The coarse pressure adjustments are performed by rapidly re-position confinement rings employing an assumed linear relationship between the conductance and the confinement rings position to bring the pressure in the plasma generating region quickly to roughly a desired set point. The fine pressure adjustments are performed by at least employing mechanical vacuum pump(s), turbo pump(s), confinement ring positioning and/or combinations thereof to achieve a derive pressure set point.
摘要翻译：在等离子体处理室中，提供了稳定压力的方法和装置。该方法包括以开环方式提供粗压调节，然后以闭环方式提供精调压力调节。粗压力调节通过采用假定的电导与约束环位置之间的线性关系快速重新定位约束环来执行，以使等离子体产生区域中的压力快速地达到大致期望的设定点。通过至少使用机械真空泵，涡轮泵，限制环定位和/或它们的组合来实现微调压力调节以实现派生压力设定点。

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