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1. 发明申请

WO2013138085A3 CHAMBER FILLER KIT FOR PLASMA ETCH CHAMBER USEFUL FOR FAST GAS SWITCHING 审中-公开
标题翻译：用于快速气体切换的等离子体气室的室内填充试剂盒
公开(公告)号：WO2013138085A3
公开(公告)日：2015-07-02
申请号：PCT/US2013028491
申请日：2013-03-01
申请人： LAM RES CORP
发明人： MCCHESNEY JON , PANAGOPOULOS THEO , PATERSON ALEX , BLAIR CRAIG
IPC分类号： H01L21/331
CPC分类号： H01J37/32477 , C23C16/4404 , H01J37/321 , H01J37/32458 , H01L21/30655
摘要： A chamber filler kit [or an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate.
摘要翻译：腔室填充器套件[或电感耦合等离子体处理室，其中通过将RF能量通过面向支撑在悬臂卡盘上的衬底的窗口感应耦合而处理半导体衬底。该套件包括至少一个室填充物，其减小了在卡盘下方的室中的下室体积。套件的填充物可以安装在具有超过60升的室容积的标准室中，并且通过使用不同尺寸的室填料，可以减小室体积以提供期望的气体流动传导并适应处理过程中真空压力的变化底物。

2. 发明申请

WO2012173769A3 POWERED GRID FOR PLASMA CHAMBER 审中-公开
标题翻译：等离子室用电网
公开(公告)号：WO2012173769A3
公开(公告)日：2014-05-15
申请号：PCT/US2012039752
申请日：2012-05-25
申请人： LAM RES CORP , LONG MAOLIN , PATERSON ALEX , MARSH RICHARD , WU YING
发明人： LONG MAOLIN , PATERSON ALEX , MARSH RICHARD , WU YING
IPC分类号： H01L21/3065
CPC分类号： H01J37/32651 , H01J37/321 , H01J37/32697 , H01L21/6831
摘要： A plasma processing chamber and methods for operating the chamber are provided. An exemplary chamber includes an electrostatic chuck for receiving a substrate and a dielectric window connected to a top portion of the chamber. An inner side of dielectric window faces a plasma processing region that is above the electrostatic chuck and an outer side of the dielectric window is exterior to the plasma processing region. Inner and outer coils are disposed above the outer side of the dielectric window, and the inner and outer coils are connected to a first RF power source. A powered grid is disposed between the outer side of dielectric window and the inner and outer coils. The powered grid is connected to a second RF power source that is independent from the first RF power source.
摘要翻译：提供等离子体处理室和操作室的方法。示例性室包括用于接收基板的静电卡盘和连接到腔室顶部的电介质窗口。电介质窗口的内侧面对位于静电卡盘上方的等离子体处理区域，并且电介质窗口的外侧在等离子体处理区域的外部。内部和外部线圈设置在电介质窗口的外侧上方，并且内部和外部线圈连接到第一RF电源。电力网格设置在电介质窗口的外侧和内部和外部线圈之间。电网连接到独立于第一RF电源的第二RF电源。

3. 发明专利

SG10201708121VA INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION 未知
公开(公告)号：SG10201708121VA
公开(公告)日：2017-11-29
申请号：SG10201708121V
申请日：2014-04-04
申请人： LAM RES CORP
发明人： PATERSON ALEX , SINGH HARMEET , MARSH RICHARD A , LILL THORSTEN , VAHEDI VAHID , WU YING , SRIRAMAN SARAVANAPRIYAN
摘要： The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

4. 发明专利

SG10201601912YA SYSTEMS FOR REMOVING AND REPLACING CONSUMABLE PARTS FROM A SEMICONDUCTOR PROCESS MODULE IN SITU 未知
公开(公告)号：SG10201601912YA
公开(公告)日：2017-05-30
申请号：SG10201601912Y
申请日：2016-03-11
申请人： LAM RES CORP
发明人： TRUSSELL DAVID D , MILLER ALAN J , DAUGHERTY JOHN , PATERSON ALEX
摘要： A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. A replacement station is coupled to the second side of the isolation valve. The replacement station includes an exchange handler and a part buffer. The part buffer includes a plurality of compartments to hold new or used consumable parts. The process module includes a lift mechanism to enable placement of a consumable part installed in the process module to a raised position. The raised position provides access to the exchange handler to enable removal of the consumable part from the process module and store in a compartment of the part buffer. The exchange handler of the replacement station is configured to provide a replacement for the consumable part from the part buffer back to the process module. The lift mechanism is configured to receive the consumable part provided for replacement by the exchange handler and lower the consumable part to an installed position. The replacement by the exchange handler and the process module is conducted while the process module and the replacement station are maintained in a vacuum state.

5. 发明专利

SG10201403639PA ION BEAM ETCHING SYSTEM 未知
公开(公告)号：SG10201403639PA
公开(公告)日：2015-02-27
申请号：SG10201403639P
申请日：2014-06-26
申请人： LAM RES CORP
发明人： SINGH HARMEET , PATERSON ALEX

6. 发明专利

SG10201403177UA CONTROLLING ION ENERGY WITHIN A PLASMA CHAMBER 未知
公开(公告)号：SG10201403177UA
公开(公告)日：2015-01-29
申请号：SG10201403177U
申请日：2014-06-12
申请人： LAM RES CORP
发明人： LILL THORSTEN , SINGH HARMEET , PATERSON ALEX , KAMARTHY GOWRI
摘要： CONTROLLING ION ENERGY WITHIN A PLASMA Systems and methods controlling ion energy within a plasma chamber are described. One of the systems includes an upper electrode coupled to a sinusoidal RF generator for receiving a sinusoidal signal and a nonsinusoidal RF generator for generating a nonsinusoidal signal. The system further includes a power amplifier coupled to the nonsinusoidal RF generator. The power amplifier is used for amplifying the nonsinusoidal signal to generate an amplified signal. The system includes a filter coupled to the power amplifier. The filter is used for filtering the amplified signal using a filtering signal to generate a filtered signal. The system includes a chuck coupled to the filter. The chuck faces at least a portion of the upper electrode and includes a lower electrode. The lower electrode is used for receiving the filtered signal to facilitate achieving ion energy at the chuck to be between a lower threshold and an upper threshold. Fig. lA 45

7. 发明专利

SG10201404158RA AIR COOLED FARADAY SHIELD AND METHODS FOR USING THE SAME 未知
公开(公告)号：SG10201404158RA
公开(公告)日：2015-02-27
申请号：SG10201404158R
申请日：2014-07-17
申请人： LAM RES CORP
发明人： SRIRAMAN SARAVANAPRIYAN , DREWERY JOHN , MCCHESNEY JOHN , PATERSON ALEX
摘要： A chamber is provided. The chamber includes a Faraday shield positioned above a substrate support of the chamber. A dielectric window is disposed over the Faraday shield, and the dielectric window has a center opening. A hub having an internal plenum for passing a flow of fluid received from an input conduit and removing the flow of fluid from an output conduit is further provided. The hub has sidewalls and a center cavity inside of the sidewalls for an optical probe, and the internal plenum is disposed in the sidewalls. The hub has an interface surface that is in physical contact with a back side of the Faraday shield. The physical contact provides for a thermal couple to the Faraday shield at a center region around said center opening, and an outer surface of the sidewalls of the hub are disposed within the center opening of the dielectric window.

8. 发明专利

SG10201401112YA INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION 未知
公开(公告)号：SG10201401112YA
公开(公告)日：2014-11-27
申请号：SG10201401112Y
申请日：2014-03-31
申请人： LAM RES CORP
发明人： SINGH HARMEET , LILL THORSTEN , VAHEDI VAHID , PATERSON ALEX , TITUS MONICA , KAMARTHY GOWRI
摘要： The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

9. 发明专利

SG10202003587PA SYSTEMS FOR REMOVING AND REPLACING CONSUMABLE PARTS FROM A SEMICONDUCTOR PROCESS MODULE IN SITU 未知
公开(公告)号：SG10202003587PA
公开(公告)日：2020-05-28
申请号：SG10202003587P
申请日：2016-03-11
申请人： LAM RES CORP
发明人： TRUSSELL DAVID D , MILLER ALAN J , DAUGHERTY JOHN , PATERSON ALEX
摘要： A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. A replacement station is coupled to the second side of the isolation valve. The replacement station includes an exchange handler and a part buffer. The part buffer includes a plurality of compartments to hold new or used consumable parts. The process module includes a lift mechanism to enable placement of a consumable part installed in the process module to a raised position. The raised position provides access to the exchange handler to enable removal of the consumable part from the process module and store in a compartment of the part buffer. The exchange handler of the replacement station is configured to provide a replacement for the consumable part from the part buffer back to the process module. The lift mechanism is configured to receive the consumable part provided for replacement by the exchange handler and lower the consumable part to an installed position. The replacement by the exchange handler and the process module is conducted while the process module and the replacement station are maintained in a vacuum state.

10. 发明专利

SG10201705049VA PHOTORESIST DESIGN LAYOUT PATTERN PROXIMITY CORRECTION THROUGH FAST EDGE PLACEMENT ERROR PREDICTION VIA A PHYSICS-BASED ETCH PROFILE MODELING FRAMEWORK 未知
公开(公告)号：SG10201705049VA
公开(公告)日：2018-01-30
申请号：SG10201705049V
申请日：2017-06-19
申请人： LAM RES CORP
发明人： SRIRAMAN SARAVANAPRIYAN , WISE RICHARD , SINGH HARMEET , PATERSON ALEX , BAILEY III ANDREW D , VAHEDI VAHID , GOTTSCHO RICHARD A
摘要： Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.

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