专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2004007802A2 APPARATUS FOR THE GENERATION OF FLUORINE GAS 审中-公开
标题翻译：氟气产生装置
公开(公告)号：WO2004007802A2
公开(公告)日：2004-01-22
申请号：PCT/IB2003/002998
申请日：2003-06-30
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , SONOBE, Jun , INO, Minoru , FUKUOKA, Muneuyki , KIMURA, Takako
发明人： SONOBE, Jun , INO, Minoru , FUKUOKA, Muneuyki , KIMURA, Takako
IPC分类号： C25B1/24
CPC分类号： C25B15/02 , C25B1/245
摘要： To provide an apparatus for the generation of fluorine gas that is capable of very safe and highly reliable operation even during long-term operations. An apparatus (30) for the generation of fluorine gas is provided with an electrolytic cell (32) that generates, in a first gas phase region on the anode side, product gas whose main component is fluorine gas and at the same time generates, in a second gas phase region on the cathode side, by-product gas whose main component is hydrogen gas. A first and second pressure gauges (46 and 48) are provided in order to measure the pressure in the first and second gas phase regions. A first and second conduits (52 and 72) are provided in order to withdraw the product gas and by-product gas. A first and second flow rate control valves are disposed in the first and second conduits (52 and 72). The apertures of the first and second flow rate control valves are adjusted based on the measurement results from the first and second pressure gauges (46 and 48) so as to maintain the pressures in the first and second gas phase regions at first and second set values that are substantially equal.
摘要翻译：提供即使在长期运行中也能够非常安全和高可靠运行的产生氟气的装置。用于产生氟气的设备（30）设置有电解池（32），其在阳极侧的第一气相区域中产生主要成分为氟气并同时产生的产物气体阴极侧的第二气相区域，主要成分为氢气的副产物气体。提供第一和第二压力计（46和48）以便测量第一和第二气相区域中的压力。提供第一和第二管道（52和72）以便抽出产物气体和副产物气体。第一和第二流量控制阀设置在第一和第二管道（52和72）中。基于来自第一和第二压力计（46和48）的测量结果来调节第一和第二流量控制阀的孔径，以将第一和第二气相区域中的压力保持在第一和第二设定值这基本相等。

2. 发明申请

WO2003056066A2 APPARATUS FOR THE GENERATION AND SUPPLY OF FLUORINE GAS 审中-公开
标题翻译：用于生产和供应氟气的装置
公开(公告)号：WO2003056066A2
公开(公告)日：2003-07-10
申请号：PCT/EP2002/014909
申请日：2002-12-20
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , COLIN, Kennedy , KIMURA, Takato , INO, Minoru , SONOBE, Jun
发明人： COLIN, Kennedy , KIMURA, Takato , INO, Minoru , SONOBE, Jun
IPC分类号： C25B
CPC分类号： C25B15/00 , C23C16/4405 , C25B1/245
摘要： To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62. A controller 40 controls the gas switching section 56 in such a manner that, upon detection of an abnormal state at the electrolytic cell 34 by an electrolytic cell detector 36, substitute gas is supplied from the cylinder 62 to the gas utilization section.
摘要翻译：为了提供一种设置在半导体处理系统的气体供给系统中的氟气生成和供给装置，并且在设备的异常情况下可以通过安全且廉价的结构进行备份。在半导体处理系统的气体供给系统中设置有用于产生和供应气体的装置30。该装置30包含产生氟气的电解槽34和保持选自氮氟化物，氟化硫和氯氟化物的替代气体的气缸62。电解槽34和气缸62连接到气体切换部分56，气体切换部分56选择性地向气体利用部分供应来自电解槽34的氟气或来自气缸62的替代气体。控制器40控制气体切换部分56 在电解槽检测器36检测到电解槽34的异常状态的情况下，从气缸62向气体利用部供给替代气体。

3. 发明申请

WO2004064125A1 GAS FEED LINE STRUCTURE 审中-公开
标题翻译：气体输送线结构
公开(公告)号：WO2004064125A1
公开(公告)日：2004-07-29
申请号：PCT/IB2003/006315
申请日：2003-12-22
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , KIMURA, Takako , SONOBE, Jun , SATO, Hideyuki
发明人： KIMURA, Takako , SONOBE, Jun , SATO, Hideyuki
IPC分类号： H01L21/00
CPC分类号： C01B7/20 , B01D39/2034 , H01L21/67017
摘要： The problem is to provide a gas feed line structure that is well suited for supplying feed gases that contain 1% or more fluorine gas. A gas feed line structure for supplying a feed gas that contains 1% or more fluorine gas to a main process apparatus 10 has gas feed lines 48 and 28a that connect a main process apparatus 10 to a feed gas source 32 and also has adsorption devices 52 and 54 that are disposed on said gas feed lines 28a and 48. These adsorption 10 devices 52 and 54 contain an adsorption layer 66 that is composed mainly of a nickel sinter and that is traversed by the feed gas being supplied to the main process apparatus 10.
摘要翻译：问题在于提供一种非常适合于供给含有1％以上氟气的原料气体的气体供给管路结构。用于向主处理装置10供给含有1％以上氟气的原料气体的供气管路结构具有将主处理装置10与原料气源32连接的气体供给管路48,28a，并且还具有吸附装置52 54设置在所述气体供给管线28a和48上。这些吸附装置52和54包含主要由镍烧结体组成并被供给到主处理装置10的进料气体穿过的吸附层66 。

4. 发明申请

WO2003056066A3 APPARATUS FOR THE GENERATION AND SUPPLY OF FLUORINE GAS 审中-公开
公开(公告)号：WO2003056066A3
公开(公告)日：2003-07-10
申请号：PCT/EP2002/014909
申请日：2002-12-20
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , COLIN, Kennedy , KIMURA, Takato , INO, Minoru , SONOBE, Jun
发明人： COLIN, Kennedy , KIMURA, Takato , INO, Minoru , SONOBE, Jun
IPC分类号： C25B15/00
摘要： To provide an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62. A controller 40 controls the gas switching section 56 in such a manner that, upon detection of an abnormal state at the electrolytic cell 34 or in the gas supply path by detectors 36, 72, substitute gas is supplied from the cylinder 62 to the gas utilization section.

5. 发明申请

WO2006043125A1 FLUORINE GAS GENERATOR 审中-公开
标题翻译：荧光发生器
公开(公告)号：WO2006043125A1
公开(公告)日：2006-04-27
申请号：PCT/IB2004/003459
申请日：2004-10-20
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , HONMA, Fumihiro , SONOBE, Jun
发明人： HONMA, Fumihiro , SONOBE, Jun
IPC分类号： C25B9/10
CPC分类号： C25B15/02 , C25B1/245
摘要： To provide a fluorine gas generator that is capable of very safe and highly (5) reliable operations even during long-term use. A fluorine gas generator (30) has an electrolytic cell (32) that generates product gas whose main component is fluorine gas in a first gas-phase region on the anode side and that generates by-product gas whose main component is hydrogen in a second gas-phase region on the cathode side. A first and second conduits (52, 72) are provided for withdrawal of the product and by-product gases. A first gas flow rate control valve (56) is provided in the first conduit (52); the aperture of this valve is adjusted based on information that directly or indirectly indicates the state within the electrolytic cell (32). A first cartridge (54) is disposed in the first conduit (52) upstream from the first valve (56). The first cartridge (54) holds sodium fluoride pellets that adsorb hydrogen fluoride and molten salt mist admixed in the product gas.
摘要翻译：提供即使长期使用也能够非常安全，高度（5）可靠运行的氟气发生器。氟气发生器（30）具有在阳极侧的第一气相区域中产生主要成分为氟气的产物气体的电解池（32），并且在第二气体中产生主成分为氢的副产物气体阴极侧的气相区域。第一和第二管道（52,72）被提供用于取出产物和副产物气体。第一气体流量控制阀（56）设置在第一管道（52）中; 基于直接或间接地指示电解槽（32）内的状态的信息来调节该阀的孔径。第一盒（54）在第一导管（52）中设置在第一阀（56）的上游。第一筒（54）容纳氟化物颗粒，其吸附产物气体中的氟化氢和熔融盐雾。

6. 发明申请

WO2008117258A3 METHOD FOR LOW TEMPERATURE THERMAL CLEANING 审中-公开
标题翻译：低温热清洁方法
公开(公告)号：WO2008117258A3
公开(公告)日：2008-10-02
申请号：PCT/IB2008/051161
申请日：2008-03-27
申请人： L'AIR LIQUIDE-SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , SONOBE, Jun , TADAKI, Yudai , SHIGEMOTO, Takamitsu , GIRARD, Jean-Marc
发明人： SONOBE, Jun , TADAKI, Yudai , SHIGEMOTO, Takamitsu , GIRARD, Jean-Marc
IPC分类号： C23C16/44 , C23C16/54 , B08B7/00
摘要： Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. A gas mixture containing a fluorine source and an oxygen source is pre-treated to contain active fluorine species. The pre-treated mixture is stored for a time in a gas storage device, and then introduced to a semiconductor processing chamber. Prior to introduction of the pre-treated gas, the temperature in the chamber is lowered to a temperature equal to or iower than the normal operating temperature. Undesired substances are removed or cleaned through chemical reaction with the pre-treated gas mixture, without the generation of a plasma or a high temperature condition in the chamber.
摘要翻译：用于从半导体处理室中的表面清除不需要的物质的方法和设备。对含有氟源和氧源的气体混合物进行预处理以含有活性氟物质。预处理后的混合物在气体储存装置中储存一段时间，然后引入半导体处理室。在引入预处理过的气体之前，室内的温度降低到等于或低于正常工作温度的温度。通过与预处理的气体混合物的化学反应除去或清洁不需要的物质，而不会在室中产生等离子体或高温条件。

7. 发明申请

WO2011001394A3 METHOD OF REMOVING RESIDUAL FLUORINE FROM DEPOSITION CHAMBER 审中-公开
公开(公告)号：WO2011001394A3
公开(公告)日：2011-01-06
申请号：PCT/IB2010/053002
申请日：2010-06-30
申请人： L'AIR LIQUIDE, SOCIÉTÉ ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCÉDÉS GEORGES CLAUDE , SONOBE, Jun
发明人： SONOBE, Jun
IPC分类号： C23C16/44
摘要： Disclosed are methods to remove residual fluorine left in a chamber surface without the use of a plasma device or temperature elevation. The disclosed methods may permit the next step in the deposition process to occur more quickly.

8. 发明申请

WO2012052858A1 ETCHING OF OXIDE MATERIALS 审中-公开
标题翻译：氧化物材料的蚀刻
公开(公告)号：WO2012052858A1
公开(公告)日：2012-04-26
申请号：PCT/IB2011/053625
申请日：2011-08-16
申请人： L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , TERAMOTO, Takashi , SONOBE, Jun , TOGE, Terukuni , BLASCO, Nicolas , CHEVREL, Henrí
发明人： TERAMOTO, Takashi , SONOBE, Jun , TOGE, Terukuni , BLASCO, Nicolas , CHEVREL, Henrí
IPC分类号： H01L21/3065 , C23C16/44 , H01L21/31
CPC分类号： C23C16/4405 , H01L21/31122
摘要： Oxide film deposits are removed from a film-forming apparatus. In the disclosed methods, a fluorine-containing gas, preferably plasma treated NF3, reacts with the oxide film deposits. The vapors of an organic compound, preferably t-butyl alcohol or acetylacetonate, react with the fluorinated oxide film deposits and generate volatile meta! species which are easily removed from the apparatus.
摘要翻译：从成膜设备中去除氧化膜沉积物。在所公开的方法中，含氟气体，优选等离子体处理的NF 3与氧化膜沉积物反应。有机化合物，优选叔丁醇或乙酰丙酮化物的蒸气与氟化氧化物膜沉积反应，产生挥发性元素容易从设备中取出的物质。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式