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1. 发明申请

WO2004092441A2 METHODS FOR PRODUCING SILICON NITRIDE FILMS BY VAPOR-PHASE GROWTH 审中-公开
标题翻译：通过气相生长生产氮化硅薄膜的方法
公开(公告)号：WO2004092441A2
公开(公告)日：2004-10-28
申请号：PCT/IB2004/001346
申请日：2004-04-08
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , DUSSARRAT, Christian , GIRARD, Jean-Marc , KIMURA, Takako , TAMAOKI, Naoki , SATO, Yuusuke
发明人： DUSSARRAT, Christian , GIRARD, Jean-Marc , KIMURA, Takako , TAMAOKI, Naoki , SATO, Yuusuke
IPC分类号： C23C16/34
CPC分类号： C23C16/345
摘要： To provide a method that is not accompanied by the production of ammonium chloride, avoids significant admixture of carbonaceous contaminants in the film products, and can produce silicon nitride films with improved film properties even at relatively low temperatures. Silicon nitride films are formed on substrates by feeding a hydrazine gas and at least 1 precursor gas selected from the group consisting of trisilylamine gas and a silylhydrazine gas into a reaction chamber (11) that holds at least 1 substrate (112) and inducing the vapor-phase reaction of the two gases. Silylhydrazine gas can also produce silicon nitride films by itself by thermal decomposition.
摘要翻译：为了提供不伴有氯化铵生产的方法，避免了膜产品中含碳污染物的显着混合，并且即使在相对低的温度下也可以产生具有改进的膜性能的氮化硅膜。通过将肼气体和选自三甲硅烷基胺气体和甲硅烷基肼气体中的至少一种前体气体供给到容纳至少一个基板（112）并引入蒸气的反应室（11）中来在基板上形成氮化硅膜两种气体的相反应。甲硅烷肼气体也可以通过热分解自身产生氮化硅膜。

2. 发明申请

WO2006018441A1 METHOD FOR PRODUCING SILICON NITRIDE FILMS 审中-公开
标题翻译：生产氮化硅膜的方法
公开(公告)号：WO2006018441A1
公开(公告)日：2006-02-23
申请号：PCT/EP2005/054064
申请日：2005-08-17
申请人： L'AIR LIQUIDE SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , DUSSARRAT, Christian , GIRARD, Jean-Marc , KIMURA, Takako
发明人： DUSSARRAT, Christian , GIRARD, Jean-Marc , KIMURA, Takako
IPC分类号： C23C16/34
CPC分类号： C23C16/345 , H01L21/3185
摘要： (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine -type compounds selected from amine -type compounds with formula (1) NR 1 R 2 R 3 (R 1 , R 2 , and R 3 are each independently selected from hydrogen and C 1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.
摘要翻译：（问题）为了提供通过气相沉积制造氮化硅膜的方法，在使用三甲胺作为前体的同时，可以生产出显示出优异的膜性能的氮化硅膜，并且可以在相对低的温度和较高的生长速率下进行。（溶液）制造氮化硅膜的方法，所述方法的特征在于将气态三甲胺和气态氮源供给至少两种选自式（1）的胺类化合物的胺类化合物NR

3. 发明申请

WO2004064125A1 GAS FEED LINE STRUCTURE 审中-公开
标题翻译：气体输送线结构
公开(公告)号：WO2004064125A1
公开(公告)日：2004-07-29
申请号：PCT/IB2003/006315
申请日：2003-12-22
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , KIMURA, Takako , SONOBE, Jun , SATO, Hideyuki
发明人： KIMURA, Takako , SONOBE, Jun , SATO, Hideyuki
IPC分类号： H01L21/00
CPC分类号： C01B7/20 , B01D39/2034 , H01L21/67017
摘要： The problem is to provide a gas feed line structure that is well suited for supplying feed gases that contain 1% or more fluorine gas. A gas feed line structure for supplying a feed gas that contains 1% or more fluorine gas to a main process apparatus 10 has gas feed lines 48 and 28a that connect a main process apparatus 10 to a feed gas source 32 and also has adsorption devices 52 and 54 that are disposed on said gas feed lines 28a and 48. These adsorption 10 devices 52 and 54 contain an adsorption layer 66 that is composed mainly of a nickel sinter and that is traversed by the feed gas being supplied to the main process apparatus 10.
摘要翻译：问题在于提供一种非常适合于供给含有1％以上氟气的原料气体的气体供给管路结构。用于向主处理装置10供给含有1％以上氟气的原料气体的供气管路结构具有将主处理装置10与原料气源32连接的气体供给管路48,28a，并且还具有吸附装置52 54设置在所述气体供给管线28a和48上。这些吸附装置52和54包含主要由镍烧结体组成并被供给到主处理装置10的进料气体穿过的吸附层66 。

4. 发明申请

WO2004007802A2 APPARATUS FOR THE GENERATION OF FLUORINE GAS 审中-公开
标题翻译：氟气产生装置
公开(公告)号：WO2004007802A2
公开(公告)日：2004-01-22
申请号：PCT/IB2003/002998
申请日：2003-06-30
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE , SONOBE, Jun , INO, Minoru , FUKUOKA, Muneuyki , KIMURA, Takako
发明人： SONOBE, Jun , INO, Minoru , FUKUOKA, Muneuyki , KIMURA, Takako
IPC分类号： C25B1/24
CPC分类号： C25B15/02 , C25B1/245
摘要： To provide an apparatus for the generation of fluorine gas that is capable of very safe and highly reliable operation even during long-term operations. An apparatus (30) for the generation of fluorine gas is provided with an electrolytic cell (32) that generates, in a first gas phase region on the anode side, product gas whose main component is fluorine gas and at the same time generates, in a second gas phase region on the cathode side, by-product gas whose main component is hydrogen gas. A first and second pressure gauges (46 and 48) are provided in order to measure the pressure in the first and second gas phase regions. A first and second conduits (52 and 72) are provided in order to withdraw the product gas and by-product gas. A first and second flow rate control valves are disposed in the first and second conduits (52 and 72). The apertures of the first and second flow rate control valves are adjusted based on the measurement results from the first and second pressure gauges (46 and 48) so as to maintain the pressures in the first and second gas phase regions at first and second set values that are substantially equal.
摘要翻译：提供即使在长期运行中也能够非常安全和高可靠运行的产生氟气的装置。用于产生氟气的设备（30）设置有电解池（32），其在阳极侧的第一气相区域中产生主要成分为氟气并同时产生的产物气体阴极侧的第二气相区域，主要成分为氢气的副产物气体。提供第一和第二压力计（46和48）以便测量第一和第二气相区域中的压力。提供第一和第二管道（52和72）以便抽出产物气体和副产物气体。第一和第二流量控制阀设置在第一和第二管道（52和72）中。基于来自第一和第二压力计（46和48）的测量结果来调节第一和第二流量控制阀的孔径，以将第一和第二气相区域中的压力保持在第一和第二设定值这基本相等。

5. 发明申请

WO2004030071A1 METHODS FOR PRODUCING SILICON NITRIDE FILMS AND SILICON OXYNITRIDE FILMS BY THERMAL CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过热化学蒸气沉积生产硅酸盐膜和硅氧烷膜的方法
公开(公告)号：WO2004030071A1
公开(公告)日：2004-04-08
申请号：PCT/EP2003/012395
申请日：2003-09-23
申请人： L'AIR LIQUIDE, SOCIETE ANONYME A DIRECTOIRE ET CONSEIL DE SURVEILLANCE POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
发明人： DUSSARRAT, Christian , GIRARD, Jean-Marc , KIMURA, Takako , TAMAOKI, Naoki , SATO, Yuusuke
IPC分类号： H01L21/318
CPC分类号： H01L21/02271 , C23C16/308 , C23C16/345 , H01L21/0214 , H01L21/0217 , H01L21/02219 , H01L21/3145 , H01L21/3185
摘要： Silicon nitride film is formed on substrate (112) by feeding trisilylamine and ammonia into a CVD reaction chamber (11) that holds substrate (112). During this process, the ammonia gas/trisilylamine gas flow rate ratio is set to a value of at least 10 and/or the thermal CVD reaction is run at a temperature no greater than 600°C. Silicon oxynitride is obtained by also introducing an oxygen source gas into the CVD reaction chamber (11). The method according to the invention avoids the production of ammonium chloride and/or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.
摘要翻译：通过将三甲胺和氨进料到保持基板（112）的CVD反应室（11）中，在基板（112）上形成氮化硅膜。在该过程中，将氨气/三甲硅烷气体流量比设定为至少10的值和/或热CVD反应在不高于600℃的温度下进行。通过还将氧源气体引入CVD反应室（11）中也可以获得氮氧化硅。根据本发明的方法避免了氯化铵的生成和/或对沉积膜的质量有害的含碳污染物的引入。

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