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2. 发明申请

WO2018155724A1 ORGANIC ELECTROLUMINESCENT DEVICE, COMPOUND AND USE THEREOF 审中-公开
公开(公告)号：WO2018155724A1
公开(公告)日：2018-08-30
申请号：PCT/JP2018/007382
申请日：2018-02-21
申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , UNIVERSITE D'AIX-MARSEILLE
发明人： RIBIERRE, Jean-Charles , KIM, DaeHyeon , ADACHI, Chihaya , D' ALEO, Anthony , FAGES, Frederic , ZABOROVA, Elena
IPC分类号： H01L51/50 , C07F5/04 , C09K11/06 , H01S5/36
摘要： A compound represented by the following formula (1) is an excellent near-infrared emitter. R 1 to R 6 are H or a substituent and R 7 is represented by the following formula (2). Ar 11 is an aryl group, R 11 is a substituent other than an aryl group and n11 is 1 or more.

4. 发明申请

WO2019139175A1 ORGANIC LIGHT-EMITTING FIELD-EFFECT TRANSISTOR 审中-公开
公开(公告)号：WO2019139175A1
公开(公告)日：2019-07-18
申请号：PCT/JP2019/001162
申请日：2019-01-09
申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION , THE UNIVERSITY OF QUEENSLAND
发明人： BENCHEIKH, Fatima , MAMADA, Masashi , ADACHI, Chihaya , RIBIERRE, Jean-Charles , NAMDAS, Ebinazar Benjamin , LO, Shih-Chun , SOBUS, Jan Ernest , AHMAD, Viqar
IPC分类号： H01L51/50 , H01L29/786 , H01L51/05 , H01L51/30 , H05B33/02 , H05B33/26
CPC分类号： H01L29/786 , H01L51/05 , H01L51/50 , H05B33/02 , H05B33/26
摘要： In an organic light-emitting field-effect transistor containing a delayed fluorescent material, excitons can be efficiently used for light emission to remarkably enhance the emission efficiency of the transistor and high mobility along with high on/off ratios can be achieved.

5. 发明申请

WO2018216820A1 COMPOUND, LIGHT-EMITTING LIFETIME LENGTHENING AGENT, USE OF N-TYPE COMPOUND, FILM AND LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：WO2018216820A1
公开(公告)日：2018-11-29
申请号：PCT/JP2018/020627
申请日：2018-05-23
申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
发明人： CUI, Linsong , NAKANOTANI, Hajime , ADACHI, Chihaya
IPC分类号： C07D251/24 , C09K11/06 , H05B33/14
摘要： A light-emitting device having a light-emitting layer containing a delayed fluorescence emitter and an n-type compound has an extended lifetime and high performance. A compound having a triazine ring substituted by a spiro aromatic group can be used as the n-type compound.

6. 发明申请

WO2018147470A1 CURRENT-INJECTION ORGANIC SEMICONDUCTOR LASER DIODE, METHOD FOR PRODUCING SAME AND PROGRAM 审中-公开
公开(公告)号：WO2018147470A1
公开(公告)日：2018-08-16
申请号：PCT/JP2018/005362
申请日：2018-02-07
申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
发明人： SANDANAYAKA, Sangarange Don Atula , MATSUSHIMA, Toshinori , BENCHEIKH, Fatima , GOUSHI, Kenichi , RIBIERRE, Jean-Charles , ADACHI, Chihaya , FUJIHARA, Takashi
IPC分类号： H01S5/36
摘要： Disclosed is a current-injection organic semiconductor laser diode comprising a pair of electrodes, an optical resonator structure, and one or more organic layers including a light amplification layer composed of an organic semiconductor, which has a sufficient overlap between the distribution of exciton density and the electric field intensity distribution of the resonant optical mode during current injection to emit laser light.

7. 发明申请

WO2018043763A1 CONTINUOUS-WAVE ORGANIC THIN-FILM DISTRIBUTED FEEDBACK LASER AND ELECTRICALLY DRIVEN ORGANIC SEMICONDUCTOR LASER DIODE 审中-公开
标题翻译：连续波有机薄膜分布反馈激光器和电驱动有机半导体激光二极管
公开(公告)号：WO2018043763A1
公开(公告)日：2018-03-08
申请号：PCT/JP2017/033366
申请日：2017-09-01
申请人： KYUSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION
发明人： ADACHI, Chihaya , SANDANAYAKA, Sangarange Don Atula , MATSUSHIMA, Toshinori , YOSHIDA, Kou , RIBIERRE, Jean-Charles , FATIMA, Bencheikh , GOUSHI, Kenichi , FUJIHARA, Takashi
IPC分类号： H01S5/36
摘要： Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.
摘要翻译：
所公开的是含有一对电极，有机激光器有源层和光学谐振器结构的一对电极和在分布式反馈光栅具有有机层的激光之间的电流激励型有机半导体激光结构体。激光器包括连续波激光器，准连续波激光器和电驱动半导体激光二极管。

8. 发明公开

EP3316328A1 ORGANIC EL MATERIAL AND ORGANIC EL ELEMENT EMPLOYING SAME 审中-公开
标题翻译：有机EL材料和使用其的有机EL元件
公开(公告)号：EP3316328A1
公开(公告)日：2018-05-02
申请号：EP16814011.9
申请日：2016-03-18
申请人： Kaneka Corporation , Kyushu University National University Corporation
发明人： HAYANO, Tetsuji , ADACHI, Chihaya
IPC分类号： H01L51/50 , C07D401/14 , C09K11/06
CPC分类号： C07D401/14 , C09K11/06 , H01L51/50
摘要： An organic EL material according to the present invention includes a compound represented by the general formula (I). In the formula (I), R 1 and R 2 are each independently a hydrogen atom or any substituent, and are preferably each independently a substituent selected from the group consisting of a hydrogen atom, a cyano group, a halogen-substituted alkyl group, a halogen, a pyridyl group optionally having a substituent, and an electron-donating aromatic group. A is a substituent in which at least one heteroaryl group optionally having a substituent, or at least one aryl amino group optionally having a substituent is bonded to a carbon atom at the 4-position of the pyridine ring directly or through other aromatic group.
摘要翻译：根据本发明的有机EL材料包括由通式（I）表示的化合物。在式（I）中，R 1和R 2各自独立地为氢原子或任何取代基，并且优选各自独立地为选自氢原子，氰基，卤素取代的烷基，卤素，任选具有取代基的吡啶基和给电子芳族基团。 A是其中至少一个任选具有取代基的杂芳基或至少一个任选具有取代基的芳基氨基直接或通过其它芳族基团与吡啶环的4位碳原子键合的取代基。

9. 发明公开

EP2963035A1 COMPOUND, LIGHT-EMITTING MATERIAL, AND ORGANIC LIGHT-EMITTING ELEMENT 有权转让
标题翻译：组织机构资料
公开(公告)号：EP2963035A1
公开(公告)日：2016-01-06
申请号：EP14757587.2
申请日：2014-02-28
申请人： Kyushu University, National University Corporation
发明人： KAJI, Hironori , SUZUKI, Hajime , SUZUKI, Katsuaki , OIWA, Hajime , WAKAMIYA, Atsushi , FUKUSHIMA, Tatsuya , SUZUKI, Furitsu , MURATA, Yasujiro , SHIZU, Katsuyuki , ADACHI, Chihaya
IPC分类号： C07D403/10 , C09K11/06 , H01L51/50
CPC分类号： H01L51/0061 , C07D209/86 , C07D223/22 , C07D235/06 , C07D239/26 , C07D251/24 , C07D271/107 , C07D401/14 , C07D403/10 , C07D471/04 , C07D487/04 , C07F1/005 , C07F3/003 , C07F5/022 , C07F5/069 , C07F7/0807 , C07F7/0809 , C07F7/0818 , C07F7/12 , C07F7/1836 , C07F7/2212 , C07F9/5022 , C07F9/5325 , C07F9/655354 , C09K11/06 , C09K2211/1007 , C09K2211/1029 , C09K2211/1059 , H01L51/0067 , H01L51/0072 , H01L51/5012
摘要： The compound represented by the following general formula is useful as a light emitting material. Ar 1 represents an arylene group, Ar 2 and Ar 3 represent an aryl group, and R 1 to R 8 represent a hydrogen atom or a substituent, provided that at least one of R 1 to R 8 represents a diarylamino group.
摘要翻译：由以下通式表示的化合物可用作发光材料。 Ar 1表示亚芳基，Ar 2和Ar 3表示芳基，R 1〜R 8表示氢原子或取代基，条件是R 1〜R 8中的至少一个表示二芳基氨基。

10. 发明公开

EP2822049A1 THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME 有权
标题翻译：与用于制造纳米结构和工艺在基板热电材料实现
公开(公告)号：EP2822049A1
公开(公告)日：2015-01-07
申请号：EP13755907.6
申请日：2013-02-19
申请人： Kyushu University, National University Corporation , Lintec Corporation
发明人： KATO, Kunihisa , ADACHI, Chihaya , MIYAZAKI, Koji , HAYAKAWA, Teruaki
IPC分类号： H01L35/32 , H01L35/16 , H01L35/34
CPC分类号： H01L35/30 , H01L35/16 , H01L35/32 , H01L35/34
摘要： The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.
摘要翻译：本发明提供了具有低的热导率和具有改进的品质因数，以及用于制造它的方法的热电转换材料。的热电转换材料具有作为形成在具有纳米级微孔纳米结构的衬底，通过形成的热电半导体材料为膜，worin的衬底上制备的热电半导体层中形成嵌段共聚物的嵌段共聚物的基板那样包括聚甲基丙烯酸甲酯单元和多面体低聚倍半硅氧烷包含-聚甲基丙烯酸酯单元，和上述热电半导体材料是p型碲化铋或n型碲化铋。的制造方法，包括形成具有纳米结构的嵌段共聚物的基板的基板形成工序和形成p型碲化铋或n型碲化铋为膜，从而提供一种热电半导体层的膜形成步骤。

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