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1. 发明授权

EP2822049B1 THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME 有权
标题翻译：与用于制造纳米结构和工艺在基板热电材料实现
公开(公告)号：EP2822049B1
公开(公告)日：2016-11-02
申请号：EP13755907.6
申请日：2013-02-19
申请人： Kyushu University, National University Corporation , Lintec Corporation
发明人： KATO, Kunihisa , ADACHI, Chihaya , MIYAZAKI, Koji , HAYAKAWA, Teruaki
IPC分类号： H01L35/32 , H01L35/16 , H01L35/34
CPC分类号： H01L35/30 , H01L35/16 , H01L35/32 , H01L35/34
摘要： The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.

2. 发明公开

EP2822049A1 THERMOELECTRIC CONVERSION MATERIAL USING SUBSTRATE HAVING NANOSTRUCTURE, AND METHOD FOR PRODUCING SAME 有权
标题翻译：与用于制造纳米结构和工艺在基板热电材料实现
公开(公告)号：EP2822049A1
公开(公告)日：2015-01-07
申请号：EP13755907.6
申请日：2013-02-19
申请人： Kyushu University, National University Corporation , Lintec Corporation
发明人： KATO, Kunihisa , ADACHI, Chihaya , MIYAZAKI, Koji , HAYAKAWA, Teruaki
IPC分类号： H01L35/32 , H01L35/16 , H01L35/34
CPC分类号： H01L35/30 , H01L35/16 , H01L35/32 , H01L35/34
摘要： The present invention provides a thermoelectric conversion material having a low thermal conductivity and having an improved figure of merit, and a method for producing it. The thermoelectric conversion material has, as formed on a substrate having a nano-level microporous nanostructure, a thermoelectric semiconductor layer prepared by forming a thermoelectric semiconductor material into a film, wherein the substrate is a block copolymer substrate formed of a block copolymer that comprises a polymethyl methacrylate unit and a polyhedral oligomeric silsesquioxane-containing polymethacrylate unit, and the thermoelectric semiconductor material is a p-type bismuth telluride or an n-type bismuth telluride. The production method comprises a substrate formation step of forming the nanostructure-having block copolymer substrate, and a film formation step of forming a p-type bismuth telluride or an n-type bismuth telluride into a film to thereby provide a thermoelectric semiconductor layer.
摘要翻译：本发明提供了具有低的热导率和具有改进的品质因数，以及用于制造它的方法的热电转换材料。的热电转换材料具有作为形成在具有纳米级微孔纳米结构的衬底，通过形成的热电半导体材料为膜，worin的衬底上制备的热电半导体层中形成嵌段共聚物的嵌段共聚物的基板那样包括聚甲基丙烯酸甲酯单元和多面体低聚倍半硅氧烷包含-聚甲基丙烯酸酯单元，和上述热电半导体材料是p型碲化铋或n型碲化铋。的制造方法，包括形成具有纳米结构的嵌段共聚物的基板的基板形成工序和形成p型碲化铋或n型碲化铋为膜，从而提供一种热电半导体层的膜形成步骤。

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