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1. 发明申请

US20130122640A1 HIGH-DENSITY P-DOPED QUANTUM DOT SOLAR CELL OBTAINED BY THE ACTIVE DOPING OF INP AND A PRODUCTION METHOD THEREFOR 有权
标题翻译：通过INP的活性掺杂获得的高密度P掺杂量子级太阳能电池及其生产方法
公开(公告)号：US20130122640A1
公开(公告)日：2013-05-16
申请号：US13806313
申请日：2010-07-02
申请人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
发明人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L31/03042 , H01L31/035218 , H01L31/06 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
摘要翻译：提供一种半导体量子点敏化太阳能电池的制造方法。更具体地说，根据本发明的制造方法包括：量子点形成步骤，在衬底上形成含有第4族元素和InP的半导体层，然后在其上形成有半导体层的衬底上进行热处理以去除铟（In），由此形成掺杂磷（P）的4族元素量子点的n型半导体量子点。

2. 发明授权

US08865513B2 High-density P-doped quantum dot solar cell obtained by the active doping of InP and a production method therefor 有权
标题翻译：通过InP的有源掺杂获得的高密度P掺杂量子点太阳能电池及其制备方法
公开(公告)号：US08865513B2
公开(公告)日：2014-10-21
申请号：US13806313
申请日：2010-07-02
申请人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
发明人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0304 , H01L31/0352 , H01L31/06
CPC分类号： H01L31/1864 , H01L31/03042 , H01L31/035218 , H01L31/06 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
摘要翻译：提供一种半导体量子点敏化太阳能电池的制造方法。更具体地说，根据本发明的制造方法包括：量子点形成步骤，在衬底上形成含有第4族元素和InP的半导体层，然后在其上形成有半导体层的衬底上进行热处理以去除铟（In），由此形成掺杂磷（P）的4族元素量子点的n型半导体量子点。

3. 发明授权

US08603849B2 Quantum dot photovoltaic device and manufacturing method thereof 有权
标题翻译：量子点光电器件及其制造方法
公开(公告)号：US08603849B2
公开(公告)日：2013-12-10
申请号：US13061297
申请日：2009-08-28
申请人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
发明人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
IPC分类号： H01L31/0264
CPC分类号： H01L31/035218 , H01L31/18
摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要翻译：本发明提供一种基于半导体的光电器件及其制造方法。基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点，与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

4. 发明申请

US20110146775A1 Quantum Dot Photovoltaic Device and Manufacturing Method Thereof 有权
标题翻译：量子点光伏器件及其制造方法
公开(公告)号：US20110146775A1
公开(公告)日：2011-06-23
申请号：US13061297
申请日：2009-08-28
申请人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
发明人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035218 , H01L31/18
摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要翻译：本发明提供一种基于半导体的光电器件及其制造方法。基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点，与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂了杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

5. 发明申请

US20110146774A1 Solar Cell Having Quantum Dot Nanowire Array and the Fabrication Method Thereof 审中-公开
标题翻译：具有量子点纳米线阵列的太阳能电池及其制造方法
公开(公告)号：US20110146774A1
公开(公告)日：2011-06-23
申请号：US13058302
申请日：2008-11-10
申请人： Kyung Joong Kim , Woo Lee
发明人： Kyung Joong Kim , Woo Lee
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035272 , H01L27/1446 , H01L31/028 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a solar cell having quantum dot nanowire array and the fabrication method thereof. The solar cell according to the present invention includes quantum dot nanowire array with a heterostructure including matrix and semiconductor quantum dots, and p-type and n-type semiconductor and electrodes each contacting the quantum dot nanowires. With the solar cell according to the present invention, the band gap energy of the semiconductor quantum dot can be easily controlled, the semiconductor quantum dots having different sizes are provided in the quantum dot nanowire so that the photoelectric conversion can be performed in the wide spectrum from visible rays to infrared rays, the quantum dot is embedded in the high density quantum dot nanowire array so that light absorption can be maximized, and the quantum dot nanowire contact p-type and n-type semiconductor over a wide area, conduction efficiency of electrons and holes can be improved.
摘要翻译：本发明涉及具有量子点纳米线阵列的太阳能电池及其制造方法。根据本发明的太阳能电池包括具有包括矩阵和半导体量子点的异质结构的量子点纳米线阵列，以及每个接触量子点纳米线的p型和n型半导体和电极。利用根据本发明的太阳能电池，可以容易地控制半导体量子点的带隙能量，在量子点纳米线中设置具有不同尺寸的半导体量子点，从而可以在宽光谱中进行光电转换从可见光到红外线，量子点嵌入到高密度量子点纳米线阵列中，使得光吸收最大化，量子点纳米线在大面积上接触p型和n型半导体，传导效率可以改善电子和空穴。

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