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1. 发明申请

US20110146775A1 Quantum Dot Photovoltaic Device and Manufacturing Method Thereof 有权
标题翻译：量子点光伏器件及其制造方法
公开(公告)号：US20110146775A1
公开(公告)日：2011-06-23
申请号：US13061297
申请日：2009-08-28
申请人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
发明人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035218 , H01L31/18
摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要翻译：本发明提供一种基于半导体的光电器件及其制造方法。基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点，与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂了杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

2. 发明授权

US08865513B2 High-density P-doped quantum dot solar cell obtained by the active doping of InP and a production method therefor 有权
标题翻译：通过InP的有源掺杂获得的高密度P掺杂量子点太阳能电池及其制备方法
公开(公告)号：US08865513B2
公开(公告)日：2014-10-21
申请号：US13806313
申请日：2010-07-02
申请人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
发明人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0304 , H01L31/0352 , H01L31/06
CPC分类号： H01L31/1864 , H01L31/03042 , H01L31/035218 , H01L31/06 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
摘要翻译：提供一种半导体量子点敏化太阳能电池的制造方法。更具体地说，根据本发明的制造方法包括：量子点形成步骤，在衬底上形成含有第4族元素和InP的半导体层，然后在其上形成有半导体层的衬底上进行热处理以去除铟（In），由此形成掺杂磷（P）的4族元素量子点的n型半导体量子点。

3. 发明申请

US20140007930A1 Photo Active Layer by Silicon Quantum Dot and the Fabrication Method Thereof 有权
标题翻译：光子活性层硅量子点及其制作方法
公开(公告)号：US20140007930A1
公开(公告)日：2014-01-09
申请号：US14005656
申请日：2012-03-22
申请人： Kyoung Joong Kim , Seung Hui Hong , Jae Hee Park , Jong Shik Jang
发明人： Kyoung Joong Kim , Seung Hui Hong , Jae Hee Park , Jong Shik Jang
IPC分类号： H01L31/0352 , H01L31/0224 , H01L31/18 , H01L33/06 , H01L33/00
CPC分类号： H01L31/035263 , H01L31/022425 , H01L31/035218 , H01L31/03682 , H01L31/182 , H01L33/0054 , H01L33/06 , H01L33/08 , H01L33/34 , Y02E10/546
摘要： Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots.
摘要翻译：提供一种用于太阳能电池或发光二极管的光活性层及其制造方法。通过交替堆叠在其中在作为硅化合物的介质中形成多个含有导电型杂质的硅量子点的硅量子点层和作为多晶硅层的导电层，其中含有该硅量子点层，形成光活性层导电型杂质，如硅量子点。

4. 发明授权

US08603849B2 Quantum dot photovoltaic device and manufacturing method thereof 有权
标题翻译：量子点光电器件及其制造方法
公开(公告)号：US08603849B2
公开(公告)日：2013-12-10
申请号：US13061297
申请日：2009-08-28
申请人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
发明人： Kyung Joong Kim , Woo Lee , Yong Sung Kim , Young Heon Kim , Seung hui Hong , Wan Soo Yun , Sang Woo Kang
IPC分类号： H01L31/0264
CPC分类号： H01L31/035218 , H01L31/18
摘要： The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
摘要翻译：本发明提供一种基于半导体的光电器件及其制造方法。基于半导体的光电器件能够吸收宽带波长的光，并且由于具有高的电子 - 空穴对分离效率，因此光电转换效率高。更具体地说，制造光伏器件的方法包括以下步骤：a）在p型或n型半导体衬底上形成薄的半导体量子点膜，其中薄的半导体量子点膜包括介质内的半导体量子点，与半导体衬底掺杂相同类型的杂质; b）通过部分蚀刻形成孔阵列，其中孔阵列穿透薄的半导体量子点膜; c）在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂杂质的半导体; 以及d）在所述半导体上顺序形成透明导电膜和上电极，其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。

5. 发明授权

US09425336B2 Photo active layer by silicon quantum dot and the fabrication method thereof 有权
标题翻译：硅量子点的有源层及其制造方法
公开(公告)号：US09425336B2
公开(公告)日：2016-08-23
申请号：US14005656
申请日：2012-03-22
申请人： Kyoung Joong Kim , Seung Hui Hong , Jae Hee Park , Jong Shik Jang
发明人： Kyoung Joong Kim , Seung Hui Hong , Jae Hee Park , Jong Shik Jang
IPC分类号： H01L31/0352 , H01L31/0368 , H01L33/06 , H01L33/08 , H01L33/34 , H01L31/0224 , H01L31/18 , H01L33/00
CPC分类号： H01L31/035263 , H01L31/022425 , H01L31/035218 , H01L31/03682 , H01L31/182 , H01L33/0054 , H01L33/06 , H01L33/08 , H01L33/34 , Y02E10/546
摘要： Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots.
摘要翻译：提供一种用于太阳能电池或发光二极管的光活性层及其制造方法。通过交替堆叠在其中在作为硅化合物的介质中形成多个含有导电型杂质的硅量子点的硅量子点层和作为多晶硅层的导电层，其中含有该硅量子点层，形成光活性层导电型杂质，如硅量子点。

6. 发明申请

US20130122640A1 HIGH-DENSITY P-DOPED QUANTUM DOT SOLAR CELL OBTAINED BY THE ACTIVE DOPING OF INP AND A PRODUCTION METHOD THEREFOR 有权
标题翻译：通过INP的活性掺杂获得的高密度P掺杂量子级太阳能电池及其生产方法
公开(公告)号：US20130122640A1
公开(公告)日：2013-05-16
申请号：US13806313
申请日：2010-07-02
申请人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
发明人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , H01L31/03042 , H01L31/035218 , H01L31/06 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
摘要翻译：提供一种半导体量子点敏化太阳能电池的制造方法。更具体地说，根据本发明的制造方法包括：量子点形成步骤，在衬底上形成含有第4族元素和InP的半导体层，然后在其上形成有半导体层的衬底上进行热处理以去除铟（In），由此形成掺杂磷（P）的4族元素量子点的n型半导体量子点。

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