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    • 1. 发明申请
    • Quantum Dot Photovoltaic Device and Manufacturing Method Thereof
    • 量子点光伏器件及其制造方法
    • US20110146775A1
    • 2011-06-23
    • US13061297
    • 2009-08-28
    • Kyung Joong KimWoo LeeYong Sung KimYoung Heon KimSeung hui HongWan Soo YunSang Woo Kang
    • Kyung Joong KimWoo LeeYong Sung KimYoung Heon KimSeung hui HongWan Soo YunSang Woo Kang
    • H01L31/0352H01L31/18
    • H01L31/035218H01L31/18
    • The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
    • 本发明提供一种基于半导体的光电器件及其制造方法。 基于半导体的光电器件能够吸收宽带波长的光,并且由于具有高的电子 - 空穴对分离效率,因此光电转换效率高。 更具体地说,制造光伏器件的方法包括以下步骤:a)在p型或n型半导体衬底上形成薄的半导体量子点膜,其中薄的半导体量子点膜包括介质内的半导体量子点, 与半导体衬底掺杂相同类型的杂质; b)通过部分蚀刻形成孔阵列,其中孔阵列穿透薄的半导体量子点膜; c)在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂了杂质的半导体; 以及d)在所述半导体上顺序形成透明导电膜和上电极,其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。
    • 4. 发明授权
    • Quantum dot photovoltaic device and manufacturing method thereof
    • 量子点光电器件及其制造方法
    • US08603849B2
    • 2013-12-10
    • US13061297
    • 2009-08-28
    • Kyung Joong KimWoo LeeYong Sung KimYoung Heon KimSeung hui HongWan Soo YunSang Woo Kang
    • Kyung Joong KimWoo LeeYong Sung KimYoung Heon KimSeung hui HongWan Soo YunSang Woo Kang
    • H01L31/0264
    • H01L31/035218H01L31/18
    • The present invention provides a semiconductor based photovoltaic device and a manufacturing method thereof. The semiconductor based photovoltaic device is able to absorb light with a wide band wavelength, and has high photoelectric conversion efficiency since it has high electron-hole pair separation efficiency. More specifically, the method for manufacturing the photovoltaic device comprises the steps of: a) forming a thin semiconductor quantum dot film on a p or n-type semiconductor substrate, wherein the thin semiconductor quantum dot film includes semiconductor quantum dots inside a medium at which the same type of impurities as the semiconductor substrate are doped; b) forming a pore array through partial etching, wherein the pore array penetrates the thin semiconductor quantum dot film; c) depositing a semiconductor in which complementary impurities to the semiconductor substrate are doped on the thin semiconductor quantum dot film at which the pore array is formed; and d) forming sequentially a transparent conductive film and an upper electrode on the semiconductor in which the complementary impurities are doped and forming a lower electrode at a lower portion of the semiconductor substrate.
    • 本发明提供一种基于半导体的光电器件及其制造方法。 基于半导体的光电器件能够吸收宽带波长的光,并且由于具有高的电子 - 空穴对分离效率,因此光电转换效率高。 更具体地说,制造光伏器件的方法包括以下步骤:a)在p型或n型半导体衬底上形成薄的半导体量子点膜,其中薄的半导体量子点膜包括介质内的半导体量子点, 与半导体衬底掺杂相同类型的杂质; b)通过部分蚀刻形成孔阵列,其中孔阵列穿透薄的半导体量子点膜; c)在其上形成有孔阵列的薄半导体量子点膜上沉积半导体衬底掺杂杂质的半导体; 以及d)在所述半导体上顺序形成透明导电膜和上电极,其中所述互补杂质被掺杂并在所述半导体衬底的下部形成下电极。