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1. 发明授权

US06791105B2 Optoelectronic device having dual-structural nano dot and method for manufacturing the same 有权
标题翻译：具有双结构纳米点的光电器件及其制造方法
公开(公告)号：US06791105B2
公开(公告)日：2004-09-14
申请号：US10329269
申请日：2002-12-24
申请人： Kyu Hwan Shim , Young Joo Song , Sang Hoon Kim , Jin Yeong Kang
发明人： Kyu Hwan Shim , Young Joo Song , Sang Hoon Kim , Jin Yeong Kang
IPC分类号： H01L2906
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L31/102 , H01L33/08 , H01L33/18
摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
摘要翻译：提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。光电子器件包括电子注入层，纳米点和空穴注入层。纳米点具有由外部纳米点和内部点组成的双重结构。制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

2. 发明授权

US07094617B2 Optoelectronic device having dual-structural nano dot and method for manufacturing the same 有权
标题翻译：具有双结构纳米点的光电器件及其制造方法
公开(公告)号：US07094617B2
公开(公告)日：2006-08-22
申请号：US10912614
申请日：2004-08-04
申请人： Kyu Hwan Shim , Young Joo Song , Sang Hoon Kim , Jin Yeong Kang
发明人： Kyu Hwan Shim , Young Joo Song , Sang Hoon Kim , Jin Yeong Kang
IPC分类号： H01L21/00
CPC分类号： H01L29/127 , B82Y10/00 , B82Y20/00 , H01L31/102 , H01L33/08 , H01L33/18
摘要： An optoelectronic device and a method of manufacturing the same which the optoelectronic effect such as light emission or light reception can be increased by forming a dual-structural nano dot to enhance the confinement density of electrons and holes are provided. The optoelectronic device comprises an electron injection layer, a nano dot, and a hole injection layer. The nano dot has a dual structure composed of an external nano dot and an internal dot. The method of manufacturing the optoelectronic device comprises the steps of forming an electron injection layer on a semiconductor substrate; growing nano dot layer on the electron injection layer by an epi-growth method; heating the nano dot layer so that the nano dot has a dual structure composed of an external nano dot and an internal nano dot; and forming a hole injection layer on the overall structure.
摘要翻译：提供了通过形成双结构纳米点以增强电子和空穴的限制密度来提高光发射或光接收等光电效应的光电子器件及其制造方法。光电子器件包括电子注入层，纳米点和空穴注入层。纳米点具有由外部纳米点和内部点组成的双重结构。制造光电器件的方法包括以下步骤：在半导体衬底上形成电子注入层; 通过外延生长法在电子注入层上生长纳米点层; 加热纳米点层，使得纳米点具有由外部纳米点和内部纳米点组成的双重结构; 并在整个结构上形成空穴注入层。

3. 发明授权

US07157977B2 Automatic gain control feedback amplifier 有权
标题翻译：自动增益控制反馈放大器
公开(公告)号：US07157977B2
公开(公告)日：2007-01-02
申请号：US10995033
申请日：2004-11-23
申请人： Sang Heung Lee , Hyeon Cheol Ki , Jin Yeong Kang , Kyu Hwan Shim , Kyong Ik Cho
发明人： Sang Heung Lee , Hyeon Cheol Ki , Jin Yeong Kang , Kyu Hwan Shim , Kyong Ik Cho
IPC分类号： H03F3/08
CPC分类号： H03F3/08 , H03F1/34 , H03F3/3432 , H03F3/50 , H03G3/3084
摘要： There is provided a feedback amplifier capable of easily controlling its dynamic range without a separate gain control signal generation circuit. The feedback amplifier includes an input terminal detecting an input voltage from input current, a feedback amplification unit amplifying the input voltage to generate an output signal, and an output terminal outputting a signal amplified by the feedback amplification unit. The feedback amplification unit includes a feedback circuit unit including a feedback resistor located between the input terminal and the output terminal, and a feedback transistor connected in parallel to the feedback resistor; and a bias circuit unit supplying a predetermined bias voltage to the feedback transistor of the feedback circuit unit and merged in the feedback amplification unit.
摘要翻译：提供了一种反馈放大器，其能够在没有单独的增益控制信号产生电路的情况下容易地控制其动态范围。反馈放大器包括检测来自输入电流的输入电压的输入端子，放大输入电压以产生输出信号的反馈放大单元，以及输出由反馈放大单元放大的信号的输出端子。反馈放大单元包括反馈电路单元，该反馈电路单元包括位于输入端子和输出端子之间的反馈电阻器和与反馈电阻器并联连接的反馈晶体管; 以及偏置电路单元，向反馈电路单元的反馈晶体管提供预定的偏置电压并且合并在反馈放大单元中。

4. 发明授权

US6100103A Highly integrated multicolor light emitting device and a method for manufacturing the same 失效
标题翻译：高度集成的多色发光器件及其制造方法
公开(公告)号：US6100103A
公开(公告)日：2000-08-08
申请号：US157541
申请日：1998-09-21
申请人： Kyu Hwan Shim , Mun Cheol Baek , Hae Kwon Lee , Ki Soo Nam
发明人： Kyu Hwan Shim , Mun Cheol Baek , Hae Kwon Lee , Ki Soo Nam
IPC分类号： H01L33/00 , H01L27/15 , H01L21/44
CPC分类号： H01L25/0756 , H01L27/15 , H01L2924/0002
摘要： The present invention has been made in view of the above mentioned problem, and the present invention provides a highly integrated multicolor light emitting device which emits multiple colors in a chip by integrating light emitting devices of different colors, and in accordance with an aspect of the present invention, there is disclosed a light emitting device including: a plurality of light emitting elements formed on a substrate each of which comprises a plurality of semiconductor layers, wherein each of the plurality of light emitting elements radiates a light of different wavelength from one another.
摘要翻译：本发明是鉴于上述问题而提出的，本发明提供了一种高度集成的多色发光装置，其通过集成不同颜色的发光装置，在芯片中发射多种颜色，并且根据本发明公开了一种发光器件，包括：形成在基板上的多个发光元件，每个发光元件包括多个半导体层，其中多个发光元件中的每一个发光不同波长的光彼此。

5. 发明授权

US06455871B1 SiGe MODFET with a metal-oxide film and method for fabricating the same 有权
标题翻译：具有金属氧化物膜的SiGe MODFET及其制造方法
公开(公告)号：US06455871B1
公开(公告)日：2002-09-24
申请号：US09927939
申请日：2001-08-13
申请人： Kyu Hwan Shim , Hong Seung Kim , Seung Yun Lee , Jin Yeoung Kang
发明人： Kyu Hwan Shim , Hong Seung Kim , Seung Yun Lee , Jin Yeoung Kang
IPC分类号： H01L2906
CPC分类号： H01L29/66431 , H01L29/665 , H01L29/66545 , H01L29/7782
摘要： There is disclosed a method for fabricating a SiGe MODFET device using a metal oxide film. The present invention provides a SiGe MODFET device with improved operation speed and reduced non-linear operation characteristic caused in a single channel structure devices, by increasing the mobility of the carriers in the SiGe MODEFT having a metal-oxide gate, and method of fabricating the same. In order to accomplish the above object, the present invention grows a silicon buffer layer and a SiGe buffer layer on a silicon substrate by low-temperature process, so that defects caused by the mismatch of the lattice constants being applied to the epitaxial layer from the silicon substrate are constrained in the buffer layered formed by the low-temperature process.
摘要翻译：公开了使用金属氧化物膜制造SiGe MODFET器件的方法。本发明通过增加具有金属氧化物栅的SiGe MODEFT中的载流子的迁移率，提供了在单通道结构器件中引起的具有改进的操作速度和降低的非线性操作特性的SiGe MODFET器件，以及制造相同。为了实现上述目的，本发明通过低温处理在硅衬底上生长硅缓冲层和SiGe缓冲层，使得由晶格常数不匹配引起的缺陷从外延层施加到外延层硅衬底被限制在由低温工艺形成的缓冲层中。

6. 发明授权

US6139760A Short-wavelength optoelectronic device including field emission device and its fabricating method 失效
标题翻译：包括场发射器件和光学器件的短波长光电器件及其制造方法
公开(公告)号：US6139760A
公开(公告)日：2000-10-31
申请号：US129880
申请日：1998-08-06
申请人： Kyu Hwan Shim , Sung Woo Choi , Mun Cheol Baek , Kyoung Ik Cho , Hae Gwon Lee
发明人： Kyu Hwan Shim , Sung Woo Choi , Mun Cheol Baek , Kyoung Ik Cho , Hae Gwon Lee
IPC分类号： H01J9/02 , H01L33/32 , H01S5/04 , H01S5/183 , B29D11/00 , H01L21/00
CPC分类号： H01L33/32 , H01J9/025 , H01S2301/173 , H01S2304/02 , H01S3/0959 , H01S5/0207 , H01S5/0261 , H01S5/04 , H01S5/183
摘要： Provided with a method of fabricating a 200-250 nm short-wavelength optoelectronic device, which has a combination of an optical device with a plurality of acceleration electrodes and a field emission device with a plurality of acceleration electrodes, from a semiconductor having a 5-6 eV energe band gap, based on a principle that an electron-hole pair is produced using a highly energetic electron which is injected from a field emission device, and short-wavelength photons are emitted when the electron recombines with the hole and confined in a quantum well to emit a light corresponding to the energy level of the quantum well, thereby eliminating the need of using dopants for forming n-p junctions in the semiconductor and achieving high efficiency in terms of energy because highly energetic electrons result in one or more electron-hole pairs.
摘要翻译：提供一种制造200-250nm短波长光电子器件的方法，该器件具有光学器件与多个加速电极的组合以及具有多个加速电极的场致发射器件， 6 eV带隙，基于电子 - 空穴对使用从场致发射器件注入的高能电子产生的原理，当电子与孔结合并限制在一个时，发射短波长的光子量子阱发射对应于量子阱的能级的光，从而消除了在半导体中使用掺杂剂用于形成np结的需要，并且在能量方面实现高效率，因为高能电子产生一个或多个电子空穴对。

7. 发明授权

US6124147A Method for fabricating optoelectronic device in low-temperature deposition and thermal treatment 有权
标题翻译：在低温沉积和热处理中制造光电器件的方法
公开(公告)号：US6124147A
公开(公告)日：2000-09-26
申请号：US195691
申请日：1998-11-19
申请人： Kyu Hwan Shim , Mun Cheol Paek , Kyoung Ik Cho
发明人： Kyu Hwan Shim , Mun Cheol Paek , Kyoung Ik Cho
IPC分类号： H01L21/205 , H01L33/00 , H01L33/06 , H01L33/26 , H01L21/00
CPC分类号： H01L33/26 , B82Y20/00 , H01L33/005 , H01L33/06 , Y10S438/931 , Y10S438/954
摘要： The present invention relates to a semiconductor device and, more particularly, to a short-wavelength optoelectronic device and a method for fabricating the same. The optoelectronic device according to the present invention doesn't have to employ an ion implantation process and an ohmic contact to make the n-p junction in the WB compound semiconductor, providing a sufficient efficiency for display. The method according to the present invention comprises the step of a) forming a SiC:AlN super lattice multilayer by alternately forming a SiC epitaxial film and an AlN epitaxial film on a substrate, wherein the AlN film is formed and the SiC film is formed using a single source gas of 1,3disilabutane in an nitrogen plasma-assisted metalorganic molecular beam epitaxy system; and b) applying a thermal treatment to the SiC:AlN super lattice multilayer, thereby a mixed crystal compound having (SiC).sub.x (AlN).sub.1-x quantum wells obtained by a diffusion of SiC film and AlN.
摘要翻译：本发明涉及一种半导体器件，更具体地，涉及一种短波长光电器件及其制造方法。根据本发明的光电子器件不需要使用离子注入工艺和欧姆接触来在WB化合物半导体中形成n-p结，从而提供足够的显示效率。根据本发明的方法包括以下步骤：a）通过在衬底上交替形成SiC外延膜和AlN外延膜来形成SiC：AlN超晶格多层，其中形成AlN膜，并且使用在氮等离子体辅助金属有机分子束外延系统中，1,3-二硅烷的单一源气体; 和b）对SiC：AlN超晶格多层进行热处理，由此得到通过SiC膜和AlN的扩散获得的具有（SiC）x（AlN）1-x量子阱的混合晶体化合物。

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