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1. 发明授权

US08053308B2 Method of forming a pattern and method of manufacturing a capacitor 有权
标题翻译：形成图案的方法和制造电容器的方法
公开(公告)号：US08053308B2
公开(公告)日：2011-11-08
申请号：US11945934
申请日：2007-11-27
申请人： Kyoung-Min Kim , Jae-Ho Kim , Young-Ho Kim , Myung-Sun Kim
发明人： Kyoung-Min Kim , Jae-Ho Kim , Young-Ho Kim , Myung-Sun Kim
IPC分类号： H01L21/8242
CPC分类号： H01G4/33 , H01L27/10814 , H01L27/10852 , H01L28/91
摘要： In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
摘要翻译：在形成图案的方法中，在基板上形成具有开口的模具层。在具有开口的模具层上形成导电层，导电层具有基本均匀的厚度。在具有导电层的开口中形成缓冲层图案，缓冲层图案具有包含N-乙烯基-2-吡咯烷酮的重复单元和丙烯酸重复单元的水溶性共聚物的交联结构。蚀刻在缓冲层图案上暴露的导电层的上部。因此，在基板上形成用于半导体器件的导电图案。形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

2. 发明授权

US08871423B2 Photoresist composition for fabricating probe array, method of fabricating probe array using the photoresist composition, composition for photosensitive type developed bottom anti-reflective coating, fabricating method of patterns using the same and fabricating method of semiconductor device using the same 有权
标题翻译：用于制造探针阵列的光致抗蚀剂组合物，使用光致抗蚀剂组合物制造探针阵列的方法，用于感光型显影底部抗反射涂层的组合物，使用其的图案的制造方法和使用其的半导体器件的制造方法
公开(公告)号：US08871423B2
公开(公告)日：2014-10-28
申请号：US13015869
申请日：2011-01-28
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
IPC分类号： G03F7/004 , G03F7/38 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/039 , G03F7/20
CPC分类号： G03F7/004 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/0045 , G03F7/0397 , G03F7/20 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
摘要翻译：提供了用于制造探针阵列的光致抗蚀剂组合物。光致抗蚀剂组合物包括具有鎓盐和i线反应性敏化剂的光酸产生剂。

3. 发明授权

US08071484B2 Method of forming fine pattern employing self-aligned double patterning 失效
标题翻译：使用自对准双重图案形成精细图案的方法
公开(公告)号：US08071484B2
公开(公告)日：2011-12-06
申请号：US12132548
申请日：2008-06-03
申请人： Kyoung-Mi Kim , Jae-Ho Kim , Young-Ho Kim , Myung-Sun Kim , Youn-Kyung Wang , Mi-Ra Park
发明人： Kyoung-Mi Kim , Jae-Ho Kim , Young-Ho Kim , Myung-Sun Kim , Youn-Kyung Wang , Mi-Ra Park
IPC分类号： H01L21/311 , B44C1/22
CPC分类号： H01L21/0337
摘要： There are provided a method of forming a fine pattern employing self-aligned double patterning. The method includes providing a substrate. First mask patterns are formed on the substrate. A reactive layer is formed on the substrate having the first mask patterns. The reactive layer adjacent to the first mask patterns is reacted using a chemical attachment process, thereby forming sacrificial layers along outer walls of the first mask patterns. The reactive layer that is not reacted is removed to expose the sacrificial layers. Second mask patterns are formed between the sacrificial layers adjacent to sidewalls of the first mask patterns facing each other. The sacrificial layers are removed to expose the first and second mask patterns and the substrate exposed between the first and second mask patterns. The substrate is etched using the first and second mask patterns as an etching mask.
摘要翻译：提供了使用自对准双重图案形成精细图案的方法。该方法包括提供基板。在基板上形成第一掩模图案。在具有第一掩模图案的基板上形成反应层。使用化学附着工艺反应与第一掩模图案相邻的反应层，从而沿着第一掩模图案的外壁形成牺牲层。去除未反应的反应层以暴露牺牲层。在与彼此面对的第一掩模图案的侧壁相邻的牺牲层之间形成第二掩模图案。去除牺牲层以暴露在第一和第二掩模图案之间暴露的第一和第二掩模图案和衬底。使用第一和第二掩模图案作为蚀刻掩模蚀刻衬底。

4. 发明授权

US07985347B2 Methods of forming a pattern and methods of manufacturing a capacitor using the same 失效
标题翻译：形成图案的方法和使用其形成电容器的方法
公开(公告)号：US07985347B2
公开(公告)日：2011-07-26
申请号：US12002052
申请日：2007-12-14
申请人： Kyoung-Mi Kim , Young-Ho Kim , Myung-Sun Kim , Jae-Ho Kim , Chang-Ho Lee , Seok Han
发明人： Kyoung-Mi Kim , Young-Ho Kim , Myung-Sun Kim , Jae-Ho Kim , Chang-Ho Lee , Seok Han
IPC分类号： C03C25/68 , C23C1/00 , H01L21/20
CPC分类号： H01G13/00 , H01G4/33 , H01L27/10814 , H01L27/10852 , H01L28/91
摘要： In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern including a siloxane polymer. The conductive layer on the oxide layer pattern is selectively removed using the buffer layer pattern as an etching mask. A conductive pattern having a cylindrical shape can be formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
摘要翻译：在形成图案的方法和形成电容器的方法中，在基板上形成具有开口的氧化物层图案。在氧化物层图案和开口的底部和侧壁上形成导电层。在具有导电层的开口中形成缓冲层图案，缓冲层图案包括硅氧烷聚合物。使用缓冲层图案作为蚀刻掩模，选择性地去除氧化物层图案上的导电层。可以在基板上形成具有圆柱形状的导电图案。形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

5. 发明申请

US20080142474A1 Methods of forming a pattern and methods of manufacturing a capacitor using the same 失效
标题翻译：形成图案的方法和使用其制造电容器的方法
公开(公告)号：US20080142474A1
公开(公告)日：2008-06-19
申请号：US12002052
申请日：2007-12-14
申请人： Kyoung-Mi Kim , Young-Ho Kim , Myung-Sun Kim , Jae-Ho Kim , Chang-Ho Lee , Seok Han
发明人： Kyoung-Mi Kim , Young-Ho Kim , Myung-Sun Kim , Jae-Ho Kim , Chang-Ho Lee , Seok Han
IPC分类号： H01G4/00
CPC分类号： H01G13/00 , H01G4/33 , H01L27/10814 , H01L27/10852 , H01L28/91
摘要： In a method of forming a pattern and a method of forming a capacitor, an oxide layer pattern having an opening is formed on a substrate. A conductive layer is formed on the oxide layer pattern and the bottom and sidewalls of the opening. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern including a siloxane polymer. The conductive layer on the oxide layer pattern is selectively removed using the buffer layer pattern as an etching mask. A conductive pattern having a cylindrical shape can be formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
摘要翻译：在形成图案的方法和形成电容器的方法中，在基板上形成具有开口的氧化物层图案。在氧化物层图案和开口的底部和侧壁上形成导电层。在具有导电层的开口中形成缓冲层图案，缓冲层图案包括硅氧烷聚合物。使用缓冲层图案作为蚀刻掩模，选择性地去除氧化物层图案上的导电层。可以在基板上形成具有圆柱形状的导电图案。形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

6. 发明申请

US20080121609A1 METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A CAPACITOR 有权
标题翻译：形成图案的方法和制造电容器的方法
公开(公告)号：US20080121609A1
公开(公告)日：2008-05-29
申请号：US11945934
申请日：2007-11-27
申请人： Kyoung-Mi Kim , Jae-Ho Kim , Young-Ho Kim , Myung-Sun Kim
发明人： Kyoung-Mi Kim , Jae-Ho Kim , Young-Ho Kim , Myung-Sun Kim
IPC分类号： H01G4/00
CPC分类号： H01G4/33 , H01L27/10814 , H01L27/10852 , H01L28/91
摘要： In a method of forming a pattern, a mold layer having an opening is formed on a substrate. A conductive layer is formed on the mold layer having the opening, the conductive layer having a substantially uniform thickness. A buffer layer pattern is formed in the opening having the conductive layer, the buffer layer pattern having a cross-linked structure of water-soluble copolymers including a repeating unit of N-vinyl-2-pyrrolidone and a repeating unit of acrylate. An upper portion of the conductive layer exposed over the buffer layer pattern is etched. Accordingly, a conductive pattern for a semiconductor device is formed on the substrate. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
摘要翻译：在形成图案的方法中，在基板上形成具有开口的模具层。在具有开口的模具层上形成导电层，导电层具有基本均匀的厚度。在具有导电层的开口中形成缓冲层图案，缓冲层图案具有包含N-乙烯基-2-吡咯烷酮的重复单元和丙烯酸重复单元的水溶性共聚物的交联结构。蚀刻在缓冲层图案上暴露的导电层的上部。因此，在基板上形成用于半导体器件的导电图案。形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

7. 发明授权

US07638388B2 Method of forming a pattern and method of manufacturing a capacitor using the same 有权
标题翻译：形成图案的方法和使用其形成电容器的方法
公开(公告)号：US07638388B2
公开(公告)日：2009-12-29
申请号：US11945922
申请日：2007-11-27
申请人： Kyoung-Min Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Seok Han
发明人： Kyoung-Min Kim , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Seok Han
IPC分类号： H01L21/8244
CPC分类号： H01G4/33 , H01G4/40 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
摘要翻译：在形成图案的方法和使用其的电容器的制造方法中，在具有开口的模具层上形成导电层。在开口中的导电层上形成包含具有蒽 - 甲基丙烯酸甲酯的重复单元的聚合物和烷氧基 - 乙烯基苯的重复单元的第一缓冲层图案。烘烤第一缓冲层图案以交联聚合物并形成不溶于显影溶液的第二缓冲层图案。通过使用第二缓冲层图案作为蚀刻掩模，选择性地去除模层顶部的导电层。因此，形成用于半导体器件的导电图案。形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

8. 发明申请

US20110189608A1 PHOTORESIST COMPOSITION FOR FABRICATING PROBE ARRAY, METHOD OF FABRICATING PROBE ARRAY USING THE PHOTORESIST COMPOSITION, COMPOSITION FOR PHOTOSENSITIVE TYPE DEVELOPED BOTTOM ANTI-REFLECTIVE COATING, FABRICATING METHOD OF PATTERNS USING THE SAME AND FABRICATING METHOD OF SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：用于制造探针阵列的光电组合物，使用光电组合物制造探针阵列的方法，用于感光型底层反射涂层的组合物，使用其的图案的制作方法和使用其的半导体器件的制造方法
公开(公告)号：US20110189608A1
公开(公告)日：2011-08-04
申请号：US13015869
申请日：2011-01-28
申请人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
发明人： Hyo-Jin Yun , Jae-Ho Kim , Young-Ho Kim , Boo-Deuk Kim , Jin-A Ryu , Myung-Sun Kim , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/004 , C07C303/32 , C07C309/06 , C07C309/12 , G03F7/0045 , G03F7/0397 , G03F7/20 , Y10S430/122 , Y10S430/123
摘要： A photoresist composition for fabricating a probe array is provided. The photoresist composition includes a photoacid generator having an onium salt and an i-line reactive sensitizer.
摘要翻译：提供了用于制造探针阵列的光致抗蚀剂组合物。光致抗蚀剂组合物包括具有鎓盐和i线反应性敏化剂的光酸产生剂。

9. 发明授权

US07736527B2 Siloxane polymer compositions and methods of manufacturing a capacitor using the same 失效
标题翻译：硅氧烷聚合物组合物及其制造方法
公开(公告)号：US07736527B2
公开(公告)日：2010-06-15
申请号：US12008215
申请日：2008-01-09
申请人： Kyoung-Mi Kim , Myung-Sun Kim , Young-Ho Kim
发明人： Kyoung-Mi Kim , Myung-Sun Kim , Young-Ho Kim
IPC分类号： H01G4/01 , C08G77/50 , B05D5/12
CPC分类号： C08G77/20 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/32115 , H01L21/32139 , H01L28/91
摘要： Siloxane polymer compositions and methods of manufacturing a capacitor are described. In some embodiments, a mold layer pattern is formed on a substrate having a conductive structure, and the mold layer pattern has an opening to expose the conductive structure. A conductive layer is formed on the substrate. A buffer layer pattern is formed on the conductive layer formed in the opening. The buffer layer pattern includes a siloxane polymer represented by the following Chemical Formula 1. The conductive layer is selectively removed to form a lower electrode. The mold layer pattern and the buffer layer pattern are removed. A dielectric layer and an upper electrode are formed on the substrate to form a capacitor. The methods may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.
摘要翻译：描述硅氧烷聚合物组合物和制造电容器的方法。在一些实施例中，在具有导电结构的基底上形成模具层图案，并且模具层图案具有露出导电结构的开口。在基板上形成导电层。在形成在开口中的导电层上形成缓冲层图案。缓冲层图案包括由以下化学式1表示的硅氧烷聚合物。选择性地除去导电层以形成下电极。去除模层图案和缓冲层图案。在基板上形成电介质层和上电极，形成电容器。这些方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

10. 发明申请

US20110244397A1 Methods of Fabricating a Microarray 审中-公开
标题翻译：制作微阵列的方法
公开(公告)号：US20110244397A1
公开(公告)日：2011-10-06
申请号：US13079958
申请日：2011-04-05
申请人： Myung-Sun Kim , Hyo-Jin Yun , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham , Young-Ho Kim
发明人： Myung-Sun Kim , Hyo-Jin Yun , Se-Kyung Baek , Soo-Kyung Kim , Ji-Yun Ham , Young-Ho Kim
IPC分类号： G03F7/20
CPC分类号： G03F7/165 , G01N33/487 , G03F7/0392 , G03F7/095 , G03F7/405
摘要： A method of fabricating a microarray is provided, which includes providing a substrate having a surface that is protected by an acid labile protective group that includes an acetal group represented by formula (1) and has a functional group that can be coupled with a monomer of a probe; applying a photoresist including a photo acid generator to the substrate; selectively exposing the photoresist to deprotect the acid labile protective group that corresponds to an exposed region; removing the photoresist; and coupling the monomer that is combined with the acid labile protective group with the deprotected functional group. Formula (1) has the following structure: wherein, R1 denotes an alkyl group having 1 to 5 carbon atoms, R2 denotes hydrogen or a methyl group, and Y denotes a monomer or a site coupled with the substrate.
摘要翻译：提供了一种制造微阵列的方法，其包括提供具有被酸不稳定保护基保护的表面的基底，所述酸不稳定保护基包括由式（1）表示的缩醛基，并具有可以与式探针将包含光酸产生剂的光致抗蚀剂施加到基底上; 选择性地暴露光致抗蚀剂以使对应于暴露区域的酸不稳定保护基脱保护; 去除光致抗蚀剂; 并将与酸不稳定保护基结合的单体与去保护的官能团偶合。式（1）具有以下结构：其中，R 1表示碳原子数为1〜5的烷基，R 2表示氢或甲基，Y表示与基材偶合的单体或部位。

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