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1. 发明授权

US09673258B2 Organic pixels including organic photodiode, manufacturing methods thereof, and apparatuses including the same 有权
公开(公告)号：US09673258B2
公开(公告)日：2017-06-06
申请号：US14466395
申请日：2014-08-22
申请人： Kyo Jin Choo , Hirosige Goto , Kyu Sik Kim , Yun Kyung Kim , Kyung Bae Park , Jin Ho Seo , Sang Chul Sul , Kyung Ho Lee , Kwang-hee Lee
发明人： Kyo Jin Choo , Hirosige Goto , Kyu Sik Kim , Yun Kyung Kim , Kyung Bae Park , Jin Ho Seo , Sang Chul Sul , Kyung Ho Lee , Kwang-hee Lee
IPC分类号： H04N3/14 , H01L27/30 , H04N5/378 , H01L51/42 , H04N5/369 , H04N5/335 , H04N5/3745
CPC分类号： H01L27/307 , H01L51/424 , H04N5/3698 , H04N5/37452 , H04N5/378
摘要： Provided is an organic pixel, which includes a semiconductor substrate including a pixel circuit, an interconnection layer having a first contact and a first electrode formed on a semiconductor substrate, and an organic photo-diode formed on the interconnection layer. For example, the organic photo-diode includes an insulation layer formed on the first electrode, a second electrode and a photo-electric conversion region formed between the first contact, the insulation layer and the second electrode. The photo-electric conversion region includes an electron donating organic material and an electron accepting organic material. The organic photo-diode may further include a second contact electrically connected to the first contact. The horizontal distance between the second contacts and the insulation layer may be less than or equal to a few micrometers, for example, 10 micrometers.

2. 发明申请

US20120193689A1 PIXEL OF A MULTI-STACKED CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：多层CMOS图像传感器的像素及其制造方法
公开(公告)号：US20120193689A1
公开(公告)日：2012-08-02
申请号：US13205127
申请日：2011-08-08
申请人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
发明人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/307 , H01L23/585 , H01L27/1214 , H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14667 , H01L27/14685 , H01L27/14687 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
摘要翻译：提供了多层互补金属氧化物半导体（CMOS）图像传感器的像素，以及包括可以包括依次层叠的第一至第三光电二极管层的光接收单元的图像传感器的制造方法，集成电路 IC），其形成在所述第一至第三光电二极管层之下和之下形成的电极层，以及将形成在所述第一至第三光电二极管层之下的电极层与所述第一至第三光电二极管层之间形成的电极层的接触插塞晶体管的IC。

3. 发明授权

US09252178B2 Pixel of a multi-stacked CMOS image sensor and method of manufacturing the same 有权
标题翻译：多层CMOS图像传感器的像素及其制造方法
公开(公告)号：US09252178B2
公开(公告)日：2016-02-02
申请号：US13205127
申请日：2011-08-08
申请人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
发明人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
IPC分类号： H01L31/062 , H01L27/146 , H01L27/30 , H01L27/12 , H01L23/58 , H01L33/08
CPC分类号： H01L27/307 , H01L23/585 , H01L27/1214 , H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14667 , H01L27/14685 , H01L27/14687 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
摘要翻译：提供了一种多层互补金属氧化物半导体（CMOS）图像传感器的像素，以及包括可以包括依次堆叠的第一至第三光电二极管层的光接收单元的图像传感器的制造方法，集成电路 IC），其形成在所述第一至第三光电二极管层之下和之下形成的电极层，以及将形成在所述第一至第三光电二极管层之下的电极层与所述第一至第三光电二极管层之间形成的电极层的接触插塞晶体管的IC。

4. 发明申请

US20120168757A1 Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors 审中-公开
标题翻译：晶体管，制造方法和包括晶体管的电子器件
公开(公告)号：US20120168757A1
公开(公告)日：2012-07-05
申请号：US13165301
申请日：2011-06-21
申请人： Kyung-bae Park , Myung-kwan Ryu , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Hyun-suk Kim , Wan-joo Maeng , Joon-seok Park
发明人： Kyung-bae Park , Myung-kwan Ryu , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Hyun-suk Kim , Wan-joo Maeng , Joon-seok Park
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78693
摘要： A transistor includes a channel layer disposed above a gate and including an oxide semiconductor. A source electrode contacts a first end portion of the channel layer, and a drain electrode contacts a second end portion of the channel layer. The channel layer further includes a fluorine-containing region formed in an upper portion of the channel layer between the source electrode and the drain electrode.
摘要翻译：晶体管包括设置在栅极上方并包括氧化物半导体的沟道层。源电极接触沟道层的第一端部，漏极接触沟道层的第二端部。沟道层还包括形成在源极和漏极之间的沟道层的上部的含氟区。

5. 发明申请

US20120025187A1 Transistors, methods of manufacturing transistors, and electronic devices including transistors 审中-公开
标题翻译：晶体管，制造晶体管的方法以及包括晶体管的电子器件
公开(公告)号：US20120025187A1
公开(公告)日：2012-02-02
申请号：US13064428
申请日：2011-03-24
申请人： Kyung-bae Park , Hyun-suk Kim , Myung-kwan Ryu , Sang-yoon Lee , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Wan-joo Maeng , Joon-seok Park
发明人： Kyung-bae Park , Hyun-suk Kim , Myung-kwan Ryu , Sang-yoon Lee , Kwang-hee Lee , Tae-sang Kim , Eok-su Kim , Kyoung-seok Son , Wan-joo Maeng , Joon-seok Park
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： Transistors, methods of manufacturing the transistors, and electronic devices including the transistors. The transistor may include an oxide channel layer having a multi-layer structure. The channel layer may include a first layer and a second layer that are sequentially arranged from a gate insulation layer. The first layer may be a conductor, and the second layer may be a semiconductor having a lower electrical conductivity than that of the first layer. The first layer may become a depletion region according to a gate voltage condition.
摘要翻译：晶体管，制造晶体管的方法以及包括晶体管的电子器件。晶体管可以包括具有多层结构的氧化物沟道层。沟道层可以包括从栅极绝缘层顺序排列的第一层和第二层。第一层可以是导体，第二层可以是具有比第一层低的导电性的半导体。第一层可以根据栅极电压条件成为耗尽区。

6. 发明授权

US08866136B2 Transistor, method of manufacturing the transistor and electronic device including the transistor 有权
标题翻译：晶体管，制造晶体管的方法和包括晶体管的电子器件
公开(公告)号：US08866136B2
公开(公告)日：2014-10-21
申请号：US12805379
申请日：2010-07-28
申请人： Ji-sim Jung , Chang-seung Lee , Jae-cheol Lee , Sang-yoon Lee , Jang-yeon Kwon , Kwang-hee Lee , Kyoung-seok Son
发明人： Ji-sim Jung , Chang-seung Lee , Jae-cheol Lee , Sang-yoon Lee , Jang-yeon Kwon , Kwang-hee Lee , Kyoung-seok Son
IPC分类号： H01L29/10 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78606
摘要： Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.
摘要翻译：提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。晶体管可以包括沟道层上的钝化层，源极，漏极和栅极，其中钝化层的成分在高度方向上变化。钝化层可以具有依次层叠的包括氧化硅层，氮氧化硅层和氮化硅层的多层结构。沟道层可以包括氧化物半导体。

7. 发明授权

US08378342B2 Oxide semiconductor and thin film transistor including the same 有权
标题翻译：包括其的氧化物半导体和薄膜晶体管
公开(公告)号：US08378342B2
公开(公告)日：2013-02-19
申请号：US12659837
申请日：2010-03-23
申请人： Tae-sang Kim , Sang-yoon Lee , Jang-yeon Kwon , Kyoung-seok Son , Ji-sim Jung , Kwang-hee Lee
发明人： Tae-sang Kim , Sang-yoon Lee , Jang-yeon Kwon , Kyoung-seok Son , Ji-sim Jung , Kwang-hee Lee
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.
摘要翻译：提供了包括氧化物半导体的氧化物半导体和氧化物薄膜晶体管。氧化物半导体可以由其中含有铪（Hf）的铟（In） - 锌（Zn）氧化物形成，其中以预定或给定的组成比包含In，Zn和Hf。

8. 发明申请

US20100097477A1 Method of detecting defects in image sensor, tester for the method, and control signal generator for the method 失效
标题翻译：检测图像传感器缺陷的方法，方法的测试方法以及该方法的控制信号发生器
公开(公告)号：US20100097477A1
公开(公告)日：2010-04-22
申请号：US12589157
申请日：2009-10-19
申请人： Jun-taek Lee , Byung-hyun Yim , Kwang-hee Lee , Ji-hoon Jung
发明人： Jun-taek Lee , Byung-hyun Yim , Kwang-hee Lee , Ji-hoon Jung
IPC分类号： H04N17/00 , H04N9/64
CPC分类号： H04N17/002
摘要： A method of detecting defects in an image sensor that may occur from a floating diffusion area of the image sensor, a tester using the method, and a control signal generator using the method include a photo diode generating charges corresponding to an image signal; a transmission transistor having a first terminal connected to a the photodiode and a second terminal connected to a floating diffusion area, thereby transmitting the charges generated in the photo diode to the floating diffusion area in response to a charge transmission control signal; and a reset transistor having a first terminal applied by a reset voltage and a second transistor connected to the floating diffusion area, thereby transmitting the reset voltage to the floating diffusion area in response to a reset control signal. The reset transistor is turned on during at least one sampling zone selected between reset level sampling and signal level sampling that are performed with respect to the image sensor.
摘要翻译：一种检测图像传感器中的可能从图像传感器的浮动扩散区域发生的缺陷的方法，使用该方法的测试仪和使用该方法的控制信号发生器的方法包括：产生与图像信号相对应的电荷的光电二极管; 传输晶体管，其具有连接到光电二极管的第一端子和连接到浮动扩散区域的第二端子，从而响应于电荷传输控制信号将在光电二极管中产生的电荷传输到浮动扩散区域; 以及复位晶体管，其具有通过复位电压施加的第一端子和连接到浮动扩散区域的第二晶体管，从而响应于复位控制信号将复位电压传输到浮动扩散区域。复位晶体管在相对于图像传感器执行的复位电平采样和信号电平采样之间所选择的至少一个采样区域中导通。

9. 发明申请

US20090124071A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20090124071A1
公开(公告)日：2009-05-14
申请号：US12270033
申请日：2008-11-13
申请人： Dong-chul Yoo , Han-mei Choi , Kwang-hee Lee , Kyong-won An , Cha-young Yoo
发明人： Dong-chul Yoo , Han-mei Choi , Kwang-hee Lee , Kyong-won An , Cha-young Yoo
IPC分类号： H01L21/28 , H01L21/316
CPC分类号： H01L29/792 , H01L21/02178 , H01L21/02181 , H01L21/022 , H01L21/02271 , H01L21/02337 , H01L21/3115 , H01L21/3162 , H01L21/31645 , H01L29/513 , H01L29/66825 , H01L29/66833 , H01L29/7881
摘要： Provided is a method of manufacturing a semiconductor device. The method includes: forming a charge storage layer on a substrate on which a gate insulating layer is formed; forming a first metal oxide layer on the charge storage layer using a first reaction source including a metal oxide layer precursor and a first oxidizing agent and changing the first metal oxide layer to a second metal oxide layer using a second reaction source including a second oxidizing agent having larger oxidizing power than the first oxidizing agent and repeating the forming of the first metal oxide layer and the changing of the first metal oxide layer to the second metal oxide layer several times to form a blocking insulating layer; and forming an electrode layer on the blocking insulating layer.
摘要翻译：提供一种制造半导体器件的方法。该方法包括：在其上形成有栅极绝缘层的基板上形成电荷存储层; 使用包括金属氧化物层前体和第一氧化剂的第一反应源在电荷存储层上形成第一金属氧化物层，并且使用包括第二氧化剂的第二反应源将第一金属氧化物层改变为第二金属氧化物层具有比第一氧化剂更大的氧化能力，并且重复形成第一金属氧化物层和将第一金属氧化物层改变为第二金属氧化物层数次以形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成电极层。

10. 发明申请

US20060148193A1 Methods for forming ruthenium films with beta-diketone containing ruthenium complexes and method for manufacturing metal-insulator-metal capacitor using the same 审中-公开
标题翻译：用含有钌络合物的β-二酮形成钌膜的方法及使用其制造金属 - 绝缘体 - 金属电容器的方法
公开(公告)号：US20060148193A1
公开(公告)日：2006-07-06
申请号：US11374349
申请日：2006-03-13
申请人： Kwang-hee Lee , Cha-young Yoo , Han-Jin Lim , Sung-tae Kim , Suk-jin Chung , Wan-don Kim , Jung-hee Chung , Jin-il Lee
发明人： Kwang-hee Lee , Cha-young Yoo , Han-Jin Lim , Sung-tae Kim , Suk-jin Chung , Wan-don Kim , Jung-hee Chung , Jin-il Lee
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , H01L21/28556 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/65
摘要： Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2-1 ccm and oxygen at a flow rate of 20-60 sccm, and depositing the ruthenium film at a temperature of 330-430° C. under a pressure of 0.5-5 Torr using chemical vapor deposition (CVD).
摘要翻译：提供1）一种在单一工艺条件下形成钌膜的方法，由此保持钌膜对下层的高附着性，以及2）使用这种方法制造金属 - 绝缘体 - 金属（MIM）电容器的方法钌膜成型方法。形成钌膜的方法包括以0.2-1ccm的流速和20-60sccm的流量的氧供给双（异庚烷-2,4-二酮）降冰片二烯钌，并将钌膜以在0.5-5乇的压力下使用化学气相沉积（CVD）来制备330-430℃。

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