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1. 发明授权

US08529776B2 High lateral to vertical ratio etch process for device manufacturing 失效
标题翻译：用于器件制造的高横向垂直比蚀刻工艺
公开(公告)号：US08529776B2
公开(公告)日：2013-09-10
申请号：US13190378
申请日：2011-07-25
申请人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： C03C15/00
CPC分类号： H01L21/02 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32139
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.
摘要翻译：使用沉积在层堆叠上的光致抗蚀剂图案作为第一掩模蚀刻在衬底上的层叠。使用等离子体原位固化光致抗蚀剂图案。光致抗蚀剂图案的至少一部分可以通过固化来改性。在一个实施例中，在等离子体的光刻胶图案上形成硅副产物。在另一个实施例中，来自等离子体的碳被嵌入到光致抗蚀剂图案中。在另一个实施例中，等离子体产生紫外光以固化光致抗蚀剂图案。固化的光致抗蚀剂图案变薄。使用薄的光致抗蚀剂图案作为第二掩模蚀刻层堆叠。

2. 发明申请

US20130029490A1 HIGH LATERAL TO VERTICAL RATIO ETCH PROCESS FOR DEVICE MANUFACTURING 失效
公开(公告)号：US20130029490A1
公开(公告)日：2013-01-31
申请号：US13190378
申请日：2011-07-25
申请人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
发明人： Kyeong Tae Lee , Sang Wook Kim , Daehee Weon , Sang-jun Choi , Sreekar Bhaviripudi , Jahyong Kuh
IPC分类号： H01L21/312
CPC分类号： H01L21/02 , H01L21/0273 , H01L21/31138 , H01L21/31144 , H01L21/32139
摘要： A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

3. 发明授权

US07985961B2 Resistive random access memory device 失效
标题翻译：电阻随机存取存储器件
公开(公告)号：US07985961B2
公开(公告)日：2011-07-26
申请号：US12003133
申请日：2007-12-20
申请人： Sang-jun Choi , Jung-hyun Lee , Chang-soo Lee
发明人： Sang-jun Choi , Jung-hyun Lee , Chang-soo Lee
IPC分类号： H01L47/00
CPC分类号： H01L45/1226 , H01L27/2436 , H01L45/04 , H01L45/142 , H01L45/144 , H01L45/1675
摘要： Example embodiments may provide resistive random access memory devices and/or methods of manufacturing resistive random access memory devices. Example embodiment resistive random access memory devices may include a switching device and/or a storage node connected to the switching device. The storage node may include a stack structure including a plurality of resistance change layers separated from one another and first and second electrodes each on a side wall of the stack structure. The resistance change layers may be connected to the first and the second electrodes in parallel and/or may have different switching voltages from each other.
摘要翻译：示例性实施例可以提供电阻性随机存取存储器件和/或制造电阻随机存取存储器件的方法。示例性实施例电阻随机存取存储器设备可以包括连接到交换设备的交换设备和/或存储节点。存储节点可以包括堆叠结构，其包括彼此分离的多个电阻变化层以及每个在堆叠结构的侧壁上的第一和第二电极。电阻变化层可以并联连接到第一和第二电极和/或可以具有彼此不同的开关电压。

4. 发明授权

US07732851B2 Method for fabricating a three-dimensional capacitor 有权
标题翻译：制造三维电容器的方法
公开(公告)号：US07732851B2
公开(公告)日：2010-06-08
申请号：US11207711
申请日：2005-08-22
申请人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
发明人： Jung-hyun Lee , Sung-ho Park , Sang-jun Choi
IPC分类号： H01L27/108
CPC分类号： H01G9/00 , H01L28/56 , H01L28/65 , H01L28/90
摘要： A capacitor and a method of fabricating the capacitor are provided herein. The capacitor can be formed by forming two or more dielectric layers and a lower electrode, wherein at least one of the two or more dielectric layers is formed before the lower electrode is formed.
摘要翻译：本文提供电容器和制造电容器的方法。可以通过形成两个或更多个电介质层和下电极来形成电容器，其中在形成下电极之前形成两个或更多个电介质层中的至少一个。

5. 发明申请

US20070297091A1 Patterned magnetic recording medium and method of manufacturing the same 审中-公开
标题翻译：图案化磁记录介质及其制造方法
公开(公告)号：US20070297091A1
公开(公告)日：2007-12-27
申请号：US11700077
申请日：2007-01-31
申请人： Sang-jun Choi , Jung-hyun Lee , Hoon-sang Oh , Bum-seok Seo
发明人： Sang-jun Choi , Jung-hyun Lee , Hoon-sang Oh , Bum-seok Seo
IPC分类号： G11B23/00
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/642 , G11B5/74 , G11B5/743 , G11B5/855
摘要： A patterned magnetic recording medium and a method of manufacturing the same are provided. The patterned magnetic recording medium includes a plate, a plurality of nanowires formed vertically on the plate, and a magnetic layer patterned on the nanowires. The magnetic layer protrudes in areas corresponding to the nanowires.
摘要翻译：提供了图案化的磁记录介质及其制造方法。图案化的磁记录介质包括板，垂直于板上形成的多个纳米线以及在纳米线上图案化的磁性层。磁性层在对应于纳米线的区域中突出。

6. 发明申请

US20070176264A1 Resistive random access memory device including an amorphous solid electrolyte layer 审中-公开
标题翻译：包括无定形固体电解质层的电阻式随机存取存储器件
公开(公告)号：US20070176264A1
公开(公告)日：2007-08-02
申请号：US11653316
申请日：2007-01-16
申请人： Jung-hyun Lee , Sang-jun Choi
发明人： Jung-hyun Lee , Sang-jun Choi
IPC分类号： H01L29/22
CPC分类号： H01L45/04 , H01L45/145
摘要： Provided is a resistive memory device including an amorphous solid electrolyte layer in a storage node. The resistive memory device includes a switching device and a storage node connected to the switching device. The storage node includes upper and lower electrodes formed of a bivalent or multivalent metal, and an amorphous solid electrolyte layer and an ion source layer formed of a monovalent metal between the upper and lower electrodes.
摘要翻译：提供了一种在存储节点中包括无定形固体电解质层的电阻式存储器件。电阻式存储器件包括连接到开关器件的开关器件和存储节点。存储节点包括由二价或多价金属形成的上电极和下电极，以及在上电极和下电极之间由非金属固体电解质层和由一价金属形成的离子源层。

7. 发明授权

US07202011B2 Photosensitive polymer including fluorine and resist composition containing the same 有权
标题翻译：包含氟的光敏聚合物和含有它的抗蚀剂组合物
公开(公告)号：US07202011B2
公开(公告)日：2007-04-10
申请号：US10423945
申请日：2003-04-28
申请人： Kwang-Sub Yoon , Sang-Gyun Woo , Ki-Yong Song , Sang-jun Choi
发明人： Kwang-Sub Yoon , Sang-Gyun Woo , Ki-Yong Song , Sang-jun Choi
IPC分类号： G03C1/73 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30 , C08F16/24
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0397 , Y10S430/108 , Y10S430/122 , Y10S430/126
摘要： Disclosed is a photosensitive polymer comprising pentafluoromethylvinyl ether derivative monomer having the formula: wherein R may be an alkoxy carbonyl, alkylsilane, a fluorine-substituted or unsubstituted C3–C20 alkyl carbonyl, a fluorine-substituted or unsubstituted C3–C20 cycloalkylcarbonyl or a fluorine-substituted or unsubstituted benzoyl substituent group. The photosensitive polymer is the polymerization product of the pentafluoromethylvinyl ether derivative monomer and at least one additional monomer selected from the group consisting of (meth)acrylic acid, (meth)acrylate, styrene, norbornene, tetrafluoroethylene and maleic anhydride monomers. The photosensitive polymer may be used in photoresist compositions for exposure light sources having a predominant wavelength of less than 157 nm.
摘要翻译：公开了一种光敏聚合物，其包含具有下式的五氟甲基乙烯基醚衍生物单体：

8. 发明授权

US07172974B2 Methods for forming fine pattern of semiconductor device 有权
标题翻译：用于形成半导体器件精细图案的方法
公开(公告)号：US07172974B2
公开(公告)日：2007-02-06
申请号：US10462448
申请日：2003-06-16
申请人： Sang-jun Choi , Young-mi Lee , Woo-sung Han
发明人： Sang-jun Choi , Young-mi Lee , Woo-sung Han
IPC分类号： H01L21/302
CPC分类号： G03F7/40 , H01L21/0275 , H01L21/0276
摘要： Provided is a method for forming a fine pattern of a semiconductor device by controlling the amount of flow of a resist pattern, including forming a resist pattern having a predetermined pattern distance on a material layer to be etched, forming a flow control barrier layer on the resist pattern to control the amount of flow during a subsequent resist flow process and to make the profile of the flowed pattern be vertical, optionally forming the flow control barrier layer by coating a material including a water-soluble high-molecular material and a crosslinking agent on the resist pattern, mixing and baking the coated material layer, and processing the resultant structure using deionized water, carrying out the flow resist process to form a hyperfine pattern and etching the lower material layer, and thereby forming fine patterns having the shape of contact holes or lines and spaces to have a critical dimension of about 100 nm or less, even with use of a KrF resist.
摘要翻译：提供了一种通过控制抗蚀剂图案的流动量来形成半导体器件的精细图案的方法，包括在待蚀刻的材料层上形成具有预定图案距离的抗蚀剂图案，在其上形成流动控制阻挡层抗蚀剂图案以控制随后的抗蚀剂流动过程期间的流量并使流动图案的轮廓垂直，任选地通过涂覆包括水溶性高分子材料和交联剂的材料形成流动控制阻挡层在抗蚀剂图案上，混合和烘烤涂覆材料层，并使用去离子水处理所得到的结构，进行流动阻挡工艺以形成超精细图案并蚀刻下部材料层，从而形成具有接触形状的精细图案空穴或线和空间具有约100nm或更小的临界尺寸，即使使用KrF抗蚀剂。

9. 发明申请

US20060246666A1 Method of fabricating flash memory with u-shape floating gate 审中-公开
标题翻译：用u形浮栅制造闪速存储器的方法
公开(公告)号：US20060246666A1
公开(公告)日：2006-11-02
申请号：US11410837
申请日：2006-04-26
申请人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
发明人： Jeong-nam Han , Dong-chan Kim , Chang-jin Kang , Kyeong-koo Chi , Woo-gwan Shim , Hyo-san Lee , Chang-ki Hong , Sang-jun Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/11526 , H01L27/105 , H01L27/11543
摘要： A method of fabricating a flash memory having a U-shape floating gate is provided. The method includes forming adjacent isolation layers separated by a gap and forming a tunnel oxide layer in the gap. After a conductive layer is formed on the tunnel oxide layer to a thickness not to fill the gap, a polishing sacrificial layer is formed on the conductive layer. The sacrificial layer and the conductive layer on the isolation layers are removed, thereby forming a U-shape floating gate self-aligned in the gap, and concurrently forming a sacrificial layer pattern within an inner portion of the floating gate. Selected isolation layers are then recessed to expose sidewalls of the floating gate. The sacrificial layer pattern is then removed from the floating gate to expose an upper surface of the floating gate.
摘要翻译：提供一种制造具有U形浮动栅极的闪速存储器的方法。该方法包括形成由间隙隔开并在间隙中形成隧道氧化物层的相邻隔离层。在隧道氧化物层上形成导电层至不填充间隙的厚度之后，在导电层上形成抛光牺牲层。除去隔离层上的牺牲层和导电层，从而在间隙中形成自对准的U形浮动栅极，同时在浮栅的内部部分内形成牺牲层图案。然后将选定的隔离层凹入以露出浮动栅极的侧壁。然后从浮动栅极去除牺牲层图案以暴露浮动栅极的上表面。

10. 发明授权

US06966952B2 Apparatus of depositing thin film with high uniformity 失效
公开(公告)号：US06966952B2
公开(公告)日：2005-11-22
申请号：US10910417
申请日：2004-08-04
申请人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
发明人： Young-eal Kim , Sang-jun Choi , Dong-joon Ma
IPC分类号： C23C14/24 , C23C14/00 , C23C14/50 , C23C16/00 , H01L21/68 , H01L21/687
CPC分类号： C23C14/505 , C23C14/243 , H01L21/68707
摘要： A deposition apparatus of depositing deposition material on a wafer in a vacuum chamber includes a deposition boat installed in the vacuum chamber to vaporize the deposition material, a wafer guide on which the wafer is loaded, the wafer guide having a rotational member rotating together with the wafer, a wafer-rotation device rotating the rotational member when the wafer guide approaches, and a wafer-transfer device reciprocating the wafer guide between an inlet of the vacuum chamber, the deposition boat and the wafer-rotation device.

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