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1. 发明申请

US20080092196A1 Non-provisional utility method and apparatus for receiving, storing, and executing data broadcast application 审中-公开
标题翻译：用于接收，存储和执行数据广播应用的非临时效用方法和装置
公开(公告)号：US20080092196A1
公开(公告)日：2008-04-17
申请号：US11699457
申请日：2007-01-30
申请人： Kwang-hyun Koh , Jong-ho Lee , Kwang-hyuk Kim
发明人： Kwang-hyun Koh , Jong-ho Lee , Kwang-hyuk Kim
IPC分类号： H04N7/16 , H04N7/173
CPC分类号： H04N7/163 , H04N21/4349 , H04N21/8173
摘要： Provided are a method and apparatus for receiving, storing, and executing a data broadcast application. The apparatus includes an application controller that determines whether receiving of application data needed to execute an application is completed before storing of a data broadcast is completed, allows the received application data to be stored when receiving of the application is completed, and determines whether the application will be executed together with audio/video data when the stored data broadcast is reproduced; and a storage unit that stores the completely received application data together with the audio/video data. Accordingly, it is possible to prevent the occurrence of errors in executing an application.
摘要翻译：提供了一种用于接收，存储和执行数据广播应用的方法和装置。该装置包括：应用控制器，在完成数据广播的存储之前，确定是否完成了执行应用所需的应用数据的接收，允许在接收到应用完成时存储接收的应用数据，并且确定应用将在再现存储的数据广播时与音频/视频数据一起执行; 以及存储单元，其将完整接收的应用数据与音频/视频数据一起存储。因此，可以防止在执行应用时发生错误。

2. 发明授权

US09015347B2 Method and apparatus for transmitting a message as an image 有权
标题翻译：用于发送消息作为图像的方法和装置
公开(公告)号：US09015347B2
公开(公告)日：2015-04-21
申请号：US13438889
申请日：2012-04-04
申请人： Min-kyoung Kang , Sung-wook Ahn , Eun Namgung , Jong-ho Lee
发明人： Min-kyoung Kang , Sung-wook Ahn , Eun Namgung , Jong-ho Lee
IPC分类号： G06F15/16 , H04L12/58
CPC分类号： H04L51/38 , H04L51/066
摘要： A message to be transmitted is converted into an image file. The image file is stored and location information about a location where the image file is stored, is generated. The image file is transmitted to at least one device based on the location information.
摘要翻译：要发送的消息被转换为图像文件。存储图像文件，并生成有关存储图像文件的位置的位置信息。基于位置信息将图像文件发送到至少一个设备。

3. 发明申请

US20130009286A1 SEMICONDUCTOR CHIP AND FLIP-CHIP PACKAGE COMPRISING THE SAME 审中-公开
标题翻译：半导体芯片和包含其的片式芯片封装
公开(公告)号：US20130009286A1
公开(公告)日：2013-01-10
申请号：US13471735
申请日：2012-05-15
申请人： Young-lyong Kim , Jong-ho Lee , Moon-gi Cho , Hwan-sik Lim , Sun-hee Park
发明人： Young-lyong Kim , Jong-ho Lee , Moon-gi Cho , Hwan-sik Lim , Sun-hee Park
IPC分类号： H01L23/58
CPC分类号： H01L24/11 , H01L23/3128 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/81 , H01L2224/02123 , H01L2224/0331 , H01L2224/0332 , H01L2224/0345 , H01L2224/03464 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05017 , H01L2224/05018 , H01L2224/05019 , H01L2224/05022 , H01L2224/05024 , H01L2224/05025 , H01L2224/05026 , H01L2224/05027 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05166 , H01L2224/0519 , H01L2224/05191 , H01L2224/05556 , H01L2224/05558 , H01L2224/05559 , H01L2224/0556 , H01L2224/05562 , H01L2224/05568 , H01L2224/05666 , H01L2224/0569 , H01L2224/05691 , H01L2224/1131 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/11912 , H01L2224/13013 , H01L2224/13014 , H01L2224/13017 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/1319 , H01L2224/13191 , H01L2224/14131 , H01L2224/1416 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2924/00014 , H01L2924/1435 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/00012 , H01L2924/01074 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor chip includes stress-relief to mitigate the effects of differences in coefficients of thermal expansion (CTE) between a printed circuit board (PCB) and a semiconductor chip and a flip-chip package including the semiconductor chip. The semiconductor chip includes a stress-relief buffer coupling a bump and a semiconductor chip pad.
摘要翻译：半导体芯片包括减轻压力以减轻印刷电路板（PCB）和半导体芯片之间的热膨胀系数（CTE）的差异以及包括半导体芯片的倒装芯片封装的影响。半导体芯片包括耦合凸块的应力消除缓冲器和半导体芯片焊盘。

4. 发明授权

US08046709B2 Apparatus for providing multiple screens and method of dynamically configuring multiple screens 有权
标题翻译：用于提供多个屏幕的设备和动态地配置多个屏幕的方法
公开(公告)号：US08046709B2
公开(公告)日：2011-10-25
申请号：US11496481
申请日：2006-08-01
申请人： Jong-ho Lee , Kwang-kee Lee , Un-gyo Jung , Glenn A. Adams
发明人： Jong-ho Lee , Kwang-kee Lee , Un-gyo Jung , Glenn A. Adams
IPC分类号： G06F3/048
CPC分类号： G09G5/14 , G09G2340/0407 , G09G2340/0464 , G09G2340/10 , G09G2340/12 , G09G2340/125 , H04N5/445 , H04N5/44591 , H04N5/45 , H04N21/4312 , H04N21/4314 , H04N21/4316 , H04N21/443 , H04N21/4622
摘要： An apparatus for providing multiple screens and a method of dynamically configuring multiple screens are provided. The apparatus for providing multiple screens includes a digital signal processing module which receives predetermined information and restores a service based on the predetermined information, a service processing module which displays one or more logical screens associated with the service, and an output module which arranges the logical screens provided by the service processing module at different locations on a display screen.
摘要翻译：提供了一种用于提供多个屏幕的装置和一种动态配置多个屏幕的方法。用于提供多个屏幕的装置包括数字信号处理模块，其接收预定信息并基于预定信息恢复服务;服务处理模块，其显示与服务相关联的一个或多个逻辑屏幕;以及输出模块，其布置逻辑由服务处理模块在显示屏幕上的不同位置提供的屏幕。

5. 发明授权

US07898600B2 Apparatus for providing multiple screens and method of dynamically configuring multiple screens 有权
标题翻译：用于提供多个屏幕的设备和动态地配置多个屏幕的方法
公开(公告)号：US07898600B2
公开(公告)日：2011-03-01
申请号：US11496454
申请日：2006-08-01
申请人： Jong-ho Lee , Kwang-kee Lee , Un-gyo Jung , Glenn A. Adams
发明人： Jong-ho Lee , Kwang-kee Lee , Un-gyo Jung , Glenn A. Adams
IPC分类号： H04N5/45
CPC分类号： G09G5/14 , G09G2340/0407 , G09G2340/0464 , G09G2340/10 , G09G2340/12 , G09G2340/125 , H04N5/445 , H04N5/44591 , H04N5/45 , H04N21/4312 , H04N21/4314 , H04N21/4316 , H04N21/443 , H04N21/4622
摘要： An apparatus and method for providing multiple screens is disclosed. The apparatus includes a user/application interface module receiving a PiP service providing mode, and an output module displaying a video component of a service on a main screen if the PiP service providing mode is a first mode and displaying a background video or the video component of the service on a PiP screen if the PiP service providing mode in a second mode.
摘要翻译：公开了一种用于提供多个屏幕的装置和方法。该装置包括接收PiP服务提供模式的用户/应用程序接口模块，以及如果PiP服务提供模式是第一模式并且显示背景视频或视频组件，则在主屏幕上显示服务的视频组件的输出模块如果在第二模式中的PiP服务提供模式，则在PiP屏幕上的服务。

6. 发明申请

US20070178637A1 Method of fabricating gate of semiconductor device using oxygen-free ashing process 审中-公开
标题翻译：使用无氧灰化工艺制造半导体器件栅极的方法
公开(公告)号：US20070178637A1
公开(公告)日：2007-08-02
申请号：US11699784
申请日：2007-01-30
申请人： Hyung-suk Jung , Cheol-kyu Lee , Jong-ho Lee , Sung-kee Han , Yun-seok Kim
发明人： Hyung-suk Jung , Cheol-kyu Lee , Jong-ho Lee , Sung-kee Han , Yun-seok Kim
IPC分类号： H01L21/8238
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A method of fabricating a gate of a semiconductor device using an oxygen-free ashing process is disclosed. The method includes forming a high-k dielectric film, having a dielectric constant higher than a silicon oxide film, on a semiconductor substrate including an NMOS region and a PMOS region, forming an etching target film on the high-k dielectric film, forming a photoresist pattern to expose any one region of the two regions, on the etching target film, etching the etching target film using the photoresist pattern as an etching mask, and removing the photoresist pattern using plasma formed in the presence of an oxygen-free reactive gas.
摘要翻译：公开了一种使用无氧灰化工艺制造半导体器件的栅极的方法。该方法包括在包括NMOS区域和PMOS区域的半导体衬底上形成具有高于氧化硅膜的介电常数的高k电介质膜，在高k电介质膜上形成蚀刻靶膜，形成光致抗蚀剂图案以暴露两个区域的任何一个区域，在蚀刻目标膜上，使用光刻胶图案蚀刻蚀刻目标膜作为蚀刻掩模，以及使用在无氧反应气体存在下形成的等离子体去除光致抗蚀剂图案。

7. 发明申请

US20070035469A1 Apparatus for providing multiple screens and method of dynamically configuring multiple screens 审中-公开
标题翻译：用于提供多个屏幕的装置和动态地配置多个屏幕的方法
公开(公告)号：US20070035469A1
公开(公告)日：2007-02-15
申请号：US11496404
申请日：2006-08-01
申请人： Jong-ho Lee , Kwang-kee Lee , Un-gyo Jung , Glenn Adams
发明人： Jong-ho Lee , Kwang-kee Lee , Un-gyo Jung , Glenn Adams
IPC分类号： H04N5/445 , H04N5/45 , G09G5/00
CPC分类号： G09G5/14 , G09G2340/0407 , G09G2340/0464 , G09G2340/10 , G09G2340/12 , G09G2340/125 , H04N5/445 , H04N5/44591 , H04N5/45 , H04N21/4312 , H04N21/4314 , H04N21/4316 , H04N21/443 , H04N21/4622
摘要： An apparatus for providing multiple screens and a method of dynamically configuring multiple screens are provided. The apparatus for providing multiple screens includes a screen generating module which generates a screen for displaying a service and a service selecting module which connects the service to the screen generated by the service generating module.
摘要翻译：提供了一种用于提供多个屏幕的装置和一种动态配置多个屏幕的方法。用于提供多个屏幕的设备包括生成用于显示服务的屏幕的屏幕生成模块和将服务连接到由服务生成模块生成的屏幕的服务选择模块。

8. 发明授权

US06563151B1 Field effect transistors having gate and sub-gate electrodes that utilize different work function materials and methods of forming same 有权
公开(公告)号：US06563151B1
公开(公告)日：2003-05-13
申请号：US09654859
申请日：2000-09-05
申请人： Hyung-cheol Shin , Jong-ho Lee , Sang-yeon Han
发明人： Hyung-cheol Shin , Jong-ho Lee , Sang-yeon Han
IPC分类号： H01L2976
CPC分类号： H01L29/66643 , H01L21/2807 , H01L21/28105 , H01L29/1083 , H01L29/4983 , H01L29/7831 , H01L29/7836
摘要： Field effect transistors include a semiconductor substrate having a channel region of first conductivity type therein extending adjacent a surface thereof. Source and drain regions of second conductivity type are also provided at opposite ends of the channel region. The source and drain regions extend in the semiconductor substrate and form P-N rectifying junctions with the channel region. A gate electrode extends on the channel region and comprises a first electrically conductive material having a first work function. A first sub-gate electrode extends on the channel region and comprises a second electrically conductive material having a second work function that is unequal to the first work function. The second electrically conductive material is preferably selected so that a difference between the second work function and a work function of the channel region is sufficient to form an inversion-layer in a portion of the channel region extending opposite the first sub-gate electrode when the first sub-gate electrode is at a zero potential bias relative to the channel region.

9. 发明授权

US08592997B2 Molded underfill flip chip package preventing warpage and void 有权
标题翻译：成型底部填充倒装芯片封装，防止翘曲和空隙
公开(公告)号：US08592997B2
公开(公告)日：2013-11-26
申请号：US12916677
申请日：2010-11-01
申请人： Hae-jung Yu , Hyeong-seob Kim , Jong-ho Lee , Jin-woo Park
发明人： Hae-jung Yu , Hyeong-seob Kim , Jong-ho Lee , Jin-woo Park
IPC分类号： H01L23/28
CPC分类号： H01L23/13 , H01L21/563 , H01L23/3128 , H01L23/562 , H01L2224/16225 , H01L2224/73203 , H01L2924/3511 , H05K1/0271 , H05K3/1225 , H05K3/284 , H05K2201/09063 , H05K2203/1316
摘要： A molded underfill flip chip package may include a printed circuit board, a semiconductor chip mounted on the printed circuit board, and a sealant. The printed circuit board has at least one resin passage hole passing through the printed circuit board and at least one resin channel on a bottom surface of the printed circuit board, the at least one resin channel extending from the at least one resin passage hole passing through the printed circuit board. The sealant seals a top surface of the printed circuit board, the semiconductor chip, the at least one resin passage hole, and the at least one resin channel.
摘要翻译：模制底部填充倒装芯片封装可以包括印刷电路板，安装在印刷电路板上的半导体芯片和密封剂。印刷电路板具有穿过印刷电路板的至少一个树脂通孔和印刷电路板的底表面上的至少一个树脂通道，所述至少一个树脂通道从至少一个树脂通道孔延伸通过印刷电路板。密封剂密封印刷电路板，半导体芯片，至少一个树脂通孔和至少一个树脂通道的顶表面。

10. 发明授权

US08030699B2 Flash memory device 有权
标题翻译：闪存设备
公开(公告)号：US08030699B2
公开(公告)日：2011-10-04
申请号：US11918967
申请日：2006-04-21
申请人： Jong-ho Lee
发明人： Jong-ho Lee
IPC分类号： H11L29/788
CPC分类号： H01L21/28273 , B82Y10/00 , H01L27/115 , H01L27/11521 , H01L29/42332 , H01L29/7881
摘要： Disclosed herein is a flash memory device in which the distribution of threshold voltage is significantly reduced and the durability is improved even though a floating gate has a micro- or nano-size length. It comprises a tunneling insulation film formed on a semiconductor substrate; a multilayer floating gate structure comprising a first thin storage electrode, a second thick storage electrode, and a third thin storage electrode, defined in that order on the tunneling insulation film; an interelectrode insulation film and a control electrode formed in that order on the floating gate structure; and a source/drain provided in the semiconductor substrate below the opposite sidewalls of the floating gate structure. The novel flash memory device can be readily fabricated at a high yield through a process compatible with a conventional one.
摘要翻译：这里公开了一种闪存器件，其中阈值电压的分布被显着地减小，并且即使浮栅具有微尺寸或纳米尺寸长度也提高了耐久性。它包括形成在半导体衬底上的隧道绝缘膜; 多层浮栅结构，包括在隧道绝缘膜上依次定义的第一薄存储电极，第二厚存储电极和第三薄层存储电极; 电极间绝缘膜和在浮栅结构上依次形成的控制电极; 以及在所述半导体衬底中设置在所述浮动栅极结构的相对侧壁下方的源极/漏极。新颖的闪速存储器件可以通过与常规闪存器件兼容的工艺以高产率容易地制造。

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