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1. 发明申请

US20120307963A1 COLLIMATOR AND X-RAY COMPUTED TOMOGRAPHY APPARATUS 审中-公开
标题翻译： COLLIMATOR和X-RAY计算机图像设备
公开(公告)号：US20120307963A1
公开(公告)日：2012-12-06
申请号：US13590216
申请日：2012-08-21
申请人： Kunio WATANABE , Akiji Wakabayashi , Makoto Sasaki , Shuya Nambu
发明人： Kunio WATANABE , Akiji Wakabayashi , Makoto Sasaki , Shuya Nambu
IPC分类号： G21K1/02 , G01N23/04
CPC分类号： A61B6/4291 , F04C2270/041 , G21K1/025
摘要： According to one embodiment, a collimator includes a collimator frame having a shape corresponding to part of a circular ring, a plurality of first partition plates which are supported on the collimator frame, are radially arrayed along a circumferential direction of the circular ring, and have shielding properties with respect to radiation, a plurality of first guide grooves radially provided in a surface of each of the first partition plates, and a plurality of second partition plates which are supported in the plurality of first guide grooves, are radially arrayed respectively in gaps between the first partition plates, and have shielding properties with respect to the radiation.
摘要翻译：根据一个实施例，准直器包括具有对应于圆环的一部分的形状的准直器框架，支撑在准直器框架上的多个第一分隔板沿圆环的圆周方向径向排列，并具有相对于辐射的屏蔽性能，径向地设置在每个第一隔板的表面中的多个第一引导槽和被支撑在多个第一引导槽中的多个第二隔板分别径向排列在间隙在第一分隔板之间，并且具有相对于辐射的屏蔽性。

2. 发明申请

US20110319680A1 PROCESS FOR PRODUCING 2, 3, 3, 3-TETRAFLUOROPROPENE 有权
标题翻译：生产2,3,3,3-四氯丙烯的方法
公开(公告)号：US20110319680A1
公开(公告)日：2011-12-29
申请号：US13167509
申请日：2011-06-23
申请人： Satoshi KAWAGUCHI , Hidekazu OKAMOTO , Yu TAKEUCHI , Hirokazu TAKAGI , Kunio WATANABE , Koichi YANASE
发明人： Satoshi KAWAGUCHI , Hidekazu OKAMOTO , Yu TAKEUCHI , Hirokazu TAKAGI , Kunio WATANABE , Koichi YANASE
IPC分类号： C07C17/23
CPC分类号： C07C17/23 , C07C21/18
摘要： In the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf), formation of HFC-254eb as an excessively reduced product is suppressed.A process for producing 2,3,3,3-tetrafluoropropene, which comprises reacting a raw material compound gas composed of at least one of 1,1-dichloro-2,3,3,3-tetrafluoropropene and 1-chloro-2,3,3,3-tetrafluoropropene, and hydrogen gas, in the presence of a catalyst, wherein the catalyst is a catalyst having palladium supported on active carbon, and the ratio of the number of moles of the hydrogen gas to the number of moles of chlorine atoms in the raw material compound gas (H2/Cl) is at most 0.7.
摘要翻译：在制备2,3,3,3-四氟丙烯（HFO-1234yf）时，抑制了作为过量还原产物的HFC-254eb的形成。一种制备2,3,3,3-四氟丙烯的方法，包括使由1,1-二氯-2,3,3,3-四氟丙烯和1-氯-2中的至少一种构成的原料化合物气体反应， 3,3,3-四氟丙烯和氢气，在催化剂存在下，其中催化剂是负载在活性炭上的钯的催化剂，氢气的摩尔数与摩尔数的比例原料化合物气体（H2 / Cl）中的氯原子为0.7以下。

3. 发明申请

US20100276762A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100276762A1
公开(公告)日：2010-11-04
申请号：US12836826
申请日：2010-07-15
申请人： Masahiro HAYASHI , Takahisa AKIBA , Kunio WATANABE , Tomo TAKASO , Susumu KENMOCHI
发明人： Masahiro HAYASHI , Takahisa AKIBA , Kunio WATANABE , Tomo TAKASO , Susumu KENMOCHI
IPC分类号： H01L29/78
CPC分类号： H01L29/7834 , H01L23/5225 , H01L23/585 , H01L29/0638 , H01L29/0653 , H01L29/0692 , H01L29/1083 , H01L29/402 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
摘要翻译：一种半导体器件，包括：半导体层; 栅极绝缘层; 栅电极; 一个通道区域源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层，其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层，其中当从所述顶侧观察时，所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中，所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上，所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域在从顶侧观察的通道宽度方向上。

4. 发明申请

US20080237747A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080237747A1
公开(公告)日：2008-10-02
申请号：US12129191
申请日：2008-05-29
申请人： Masahiro HAYASHI , Takahisa AKIBA , Kunio WATANABE , Tomo TAKASO , Susumu KENMOCHI
发明人： Masahiro HAYASHI , Takahisa AKIBA , Kunio WATANABE , Tomo TAKASO , Susumu KENMOCHI
IPC分类号： H01L29/00
CPC分类号： H01L29/7834 , H01L23/5225 , H01L23/585 , H01L29/0638 , H01L29/0653 , H01L29/0692 , H01L29/1083 , H01L29/402 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating layer; a first interlayer dielectric; a first shield layer formed above the first interlayer dielectric and the guard ring region and electrically connected to the guard ring region; a second interlayer dielectric; and a second shield layer formed above the second interlayer dielectric, wherein the first shield layer is provided outside of both ends of the gate electrode in a channel width direction when viewed from the top side; and wherein the second shield layer is provided in at least part of a first region and/or at least part of a second region, the first region being a region between one edge of the gate electrode and an edge of the first shield layer opposite to the edge of the gate electrode in the channel width direction when viewed from the top side, and the second region being a region between the other edge of the gate electrode and an edge of the first shield layer opposite to the other edge of the gate electrode in the channel width direction when viewed from the top side.
摘要翻译：一种半导体器件，包括：半导体层; 栅极绝缘层; 栅电极; 一个通道区; 源区和漏区; 护环区; 偏移绝缘层; 第一层间电介质; 第一屏蔽层，其形成在所述第一层间电介质和所述保护环区域上方并电连接到所述保护环区域; 第二层间电介质; 以及形成在所述第二层间电介质上方的第二屏蔽层，其中当从所述顶侧观察时，所述第一屏蔽层设置在所述栅电极的两端的沟道宽度方向的外侧; 并且其中所述第二屏蔽层设置在第一区域和/或第二区域的至少一部分的至少一部分中，所述第一区域是所述栅电极的一个边缘与所述第一屏蔽层的与所述第一屏蔽层的边缘相反的边缘之间的区域所述栅电极的边缘在从所述顶侧观察时在所述沟道宽度方向上，所述第二区域是所述栅电极的另一边缘与所述第一屏蔽层的与所述栅电极的另一边缘相反的边缘之间的区域在从顶侧观察的通道宽度方向上。

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