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1. 发明授权

US06810057B1 Semiconductor device and optical pickup device 失效
标题翻译：半导体器件和光学拾取器件
公开(公告)号：US06810057B1
公开(公告)日：2004-10-26
申请号：US09718568
申请日：2000-11-22
申请人： Kunio Itoh , Nobuyuki Uemura , Masaaki Yuri
发明人： Kunio Itoh , Nobuyuki Uemura , Masaaki Yuri
IPC分类号： H01S500
CPC分类号： G11B7/1362 , G11B7/123 , G11B7/22 , G11B2007/0006 , H01S5/02236 , H01S5/02248 , H01S5/02292 , H01S5/4012
摘要： A semiconductor device having a plurality of semiconductor laser elements is provided, which is capable of reducing an interval of emission points between the semiconductor laser elements and also capable of preventing heat generated by a semiconductor laser element from affecting other semiconductor elements. A concave portion is formed on a silicon substrate, and a protrusion of a quadrangular truncated pyramidal shape consisting of slanted faces of a (1 1 1) plane, a (1 {overscore (1)} 1) plane, a ({overscore (1)} {overscore (1)} 1) plane and a ({overscore (1)} 1 1) plane is formed near the center of the concave portion by using the silicon process. Among these slanted faces, a (1 1 1) outer face and a (1 1 1) inner face are determined to be reflecting mirror surfaces. The semiconductor laser elements respectively are fixed on small protrusions formed on the concave portion, and a photodetector for receiving light beams L1′ and L2′ returning from an optical disc is disposed on a top face of the protrusion.
摘要翻译：提供具有多个半导体激光元件的半导体器件，其能够减小半导体激光元件之间的发射点的间隔，并且还能够防止由半导体激光元件产生的热量影响其他半导体元件。在硅衬底上形成凹部，并且由（111）面，（（过（1）面），（（超（1）面）通过使用硅工艺在凹部的中心附近形成超芯（11）面和（超（11）面），在这些倾斜面中，（1111）外表面和（11 1）内表面被确定为反射镜表面，半导体激光元件分别固定在形成在凹部上的小突起上，并且用于接收从光盘返回的光束L1'和L2'的光电检测器设置在顶部突起面。

2. 发明授权

US06344375B1 Substrate containing compound semiconductor, method for manufacturing the same and semiconductor device using the same 有权
标题翻译：含有化合物半导体的基板，其制造方法以及使用其的半导体装置
公开(公告)号：US06344375B1
公开(公告)日：2002-02-05
申请号：US09357477
申请日：1999-07-20
申请人： Kenji Orita , Masahiro Isida , Shinji Nakamura , Masaaki Yuri , Nobuyuki Uemura
发明人： Kenji Orita , Masahiro Isida , Shinji Nakamura , Masaaki Yuri , Nobuyuki Uemura
IPC分类号： H01L2100
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02458 , H01L21/02513 , H01L21/0262 , H01L33/007
摘要： A substrate containing a compound semiconductor layer comprises a substrate layer 11, a first semiconductor layer 12 formed on the substrate layer 11, and a second semiconductor layer 13 made of a Group III nitride-based compound semiconductor formed on the first semiconductor layer 12. The semiconductor layer 12 is provided with a plurality of pores 14. Thus, a compound semiconductor layer containing a Group III nitride-based compound semiconductor with excellent surface planarity and crystallinity can be provided, as well as a method for manufacturing the same, and a semiconductor device using the same.
摘要翻译：含有化合物半导体层的基板包括基板层11，形成在基板层11上的第一半导体层12和形成在第一半导体层12上的由III族氮化物系化合物半导体构成的第二半导体层13。半导体层12设置有多个孔14.因此，可以提供包含具有优异的表面平面性和结晶度的III族氮化物基化合物半导体的化合物半导体层及其制造方法，以及半导体设备使用相同。

3. 发明授权

US06249534B1 Nitride semiconductor laser device 有权
标题翻译：氮化物半导体激光器件
公开(公告)号：US06249534B1
公开(公告)日：2001-06-19
申请号：US09285648
申请日：1999-04-05
申请人： Kunio Itoh , Masaaki Yuri , Tadao Hashimoto , Masahiro Ishida
发明人： Kunio Itoh , Masaaki Yuri , Tadao Hashimoto , Masahiro Ishida
IPC分类号： H01S5028
CPC分类号： B82Y20/00 , H01S5/0281 , H01S5/0287 , H01S5/10 , H01S5/34333
摘要： The nitride semiconductor laser device of the present invention includes: a nitride semiconductor laser diode; and a protective layer formed on at least one facet of the nitride semiconductor laser diode. The protective layer is made of Al1-x-y-zGaxInyBaN (where 0≦x, y, z≦1 and 0≦x+y+z≦1), which is transparent to light emitted from the laser diode.
摘要翻译：本发明的氮化物半导体激光器件包括：氮化物半导体激光二极管; 以及形成在所述氮化物半导体激光二极管的至少一个面上的保护层。保护层由对激光二极管发出的光透明的Al1-x-y-zGaxInyBaN（其中0 <= x，y，z <= 1和0 <= x + y + z <= 1）制成。

4. 发明授权

US07826512B2 Semiconductor laser device including transparent electrode 有权
标题翻译：半导体激光器件包括透明电极
公开(公告)号：US07826512B2
公开(公告)日：2010-11-02
申请号：US11850603
申请日：2007-09-05
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0208 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S5/3214 , H01S2304/12 , Y10S438/973 , Y10S438/977
摘要： It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni/ITO cladding layer electrode 10 as a transparent electrode, a Ti/Au pad electrode 11, and a Ti/Al/Ni/Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni/ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.
摘要翻译：本发明的目的是提供一种具有高产量的半导体激光器件，其中在外延生长层中产生的夹克被抑制，并且其制造方法，半导体激光器件包括GaN衬底1，型GaN层2，n型AlGaN包覆层3，n型GaN引导层4，InGaN多量子阱有源层5，未掺杂GaN引导层6，p型AlGaN电子溢出抑制层7 p型GaN引导层8，SiO 2阻挡层9，作为透明电极的Ni / ITO包层电极10，Ti / Au焊盘电极11和Ti / Al / Ni / Au电极12。在InGaN多量子阱活性层5的上方形成SiO 2阻挡层9，以具有开口。 Ni / ITO包层电极10形成在开口内部，对于来自InGaN多量子阱有源层的光是透明的，并且用作覆层。

5. 发明授权

US07773646B2 Semiconductor light source and light-emitting device drive circuit 有权
标题翻译：半导体光源和发光装置驱动电路
公开(公告)号：US07773646B2
公开(公告)日：2010-08-10
申请号：US12280603
申请日：2007-03-14
申请人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Katsumi Sugiura , Kenichi Matsuda
IPC分类号： H01S3/00
CPC分类号： H01S5/042
摘要： A semiconductor light source includes a light-emitting device 101 having a plurality of semiconductor layers made of nitride semiconductors, and a drive circuit 102 for driving the light-emitting device 101. The drive circuit 102 performs forward drive operation, in which a forward current is supplied to the light-emitting device to make the light-emitting device 101 emit light, and reverse drive operation, in which a reverse bias is applied to the light-emitting device. The magnitude of the reverse bias is limited by the value of a reverse current flowing through the light-emitting device.
摘要翻译：半导体光源包括具有由氮化物半导体构成的多个半导体层的发光器件101和用于驱动发光器件101的驱动电路102.驱动电路102执行正向驱动操作，其中正向电流被提供给发光装置以使发光装置101发光，并且对发光装置施加反向偏压的反向驱动操作。反向偏压的大小受流过发光器件的反向电流的值的限制。

6. 发明授权

US07738525B2 Semiconductor laser and method for fabricating the same 有权
标题翻译：半导体激光器及其制造方法
公开(公告)号：US07738525B2
公开(公告)日：2010-06-15
申请号：US12065991
申请日：2007-07-09
申请人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
发明人： Daisuke Ueda , Masaaki Yuri , Yoshiaki Hasegawa , Kenichi Matsuda
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0021 , H01S5/162 , H01S5/2009 , H01S5/2201 , H01S5/305 , H01S5/3063 , H01S5/3404
摘要： A semiconductor laser (101) includes a first cladding layer (103), an active layer (105) and a second cladding layer (108). A window region (115) including fluorine, that is, an impurity element with higher electronegativity than nitrogen, is formed in the vicinity of a front end face (113) and a rear end face (114) of a laser resonator. The window region (115) is formed by exposing the front end face (113) and the rear end face (114) to carbon fluoride (CF4) plasma. The effective band gap of a portion of the active layer (105) disposed in the window region (115) is larger than the effective band gap of another portion of the active layer, and hence, it functions as an end face window structure for suppressing COD.
摘要翻译：半导体激光器（101）包括第一包层（103），有源层（105）和第二覆层（108）。在激光谐振器的前端面（113）和后端面（114）附近形成有包含氟（即，具有比氮更高的电负性的杂质元素）的窗口区域（115）。窗口区域115通过将前端面113和后端面114暴露于氟化碳（CF4）等离子体而形成。布置在窗口区域（115）中的有源层（105）的一部分的有效带隙大于有源层的另一部分的有效带隙，因此，其用作用于抑制 COD。

7. 发明申请

US20100019254A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, LIGHTING MODULE, LIGHTING APPARATUS, AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光装置，照明模块，照明装置和半导体发光装置的制造方法
公开(公告)号：US20100019254A1
公开(公告)日：2010-01-28
申请号：US12569660
申请日：2009-09-29
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并且传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过布线（...）连接到n电极（20） 22）构成为阴极电源端子。

8. 发明授权

US07622743B2 Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device 有权
标题翻译：半导体发光元件，照明模块，照明装置以及半导体发光元件的制造方法
公开(公告)号：US07622743B2
公开(公告)日：2009-11-24
申请号：US10577780
申请日：2004-11-01
申请人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
发明人： Hideo Nagai , Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L25/0753 , H01L33/22 , H01L33/385 , H01L33/50 , H01L33/52 , H01L33/62 , H01L33/641 , H01L33/647 , H01L2221/68363 , H01L2924/0002 , H01L2933/0041 , H01L2924/00
摘要： An LED bare chip which is one type of a semiconductor light emitting device (2) includes a multilayer epitaxial structure (6) composed of a p-GaN layer (12), an InGaN/GaN MQW light emitting layer (14) and an n-GaN layer (16). A p-electrode (18) is formed on the p-GaN layer (12), and an n-electrode (20) is formed on the n-GaN layer (16). An Au plating layer (4) is formed on the p-electrode (18). The Au plating layer (4) supports the multilayer epitaxial structure (6) and conducts heat generated in the light emitting layer (14). The Au plating layer (4) is electrically divided into two portions by a polyimide member (10). One of the two portions (4A) is connected to the p-electrode (18), to be constituted as an anode power supply terminal, and the other portion (4K) is connected to the n-electrode (20) by a wiring (22), to be constituted as a cathode power supply terminal.
摘要翻译：作为一种半导体发光器件（2）的LED裸芯片包括由p-GaN层（12），InGaN / GaN MQW发光层（14）和n（n）组成的多层外延结构（6） -GaN层（16）。在p-GaN层（12）上形成p电极（18），在n-GaN层（16）上形成n电极（20）。在p电极（18）上形成Au镀层（4）。 Au镀层（4）支撑多层外延结构（6）并传导在发光层（14）中产生的热量。 Au镀层（4）通过聚酰亚胺构件（10）电分成两部分。两个部分（4A）中的一个连接到p电极（18），以构成阳极电源端子，另一部分（4K）通过布线（...）连接到n电极（20） 22）构成为阴极电源端子。

9. 发明授权

US07306675B2 Method for manufacturing semiconductor substrate 失效
标题翻译：半导体衬底的制造方法
公开(公告)号：US07306675B2
公开(公告)日：2007-12-11
申请号：US10145149
申请日：2002-05-15
申请人： Masaaki Yuri
发明人： Masaaki Yuri
IPC分类号： C30B25/02
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02664 , Y10S117/902 , Y10S117/904
摘要： A method for manufacturing a semiconductor substrate of the present invention includes the steps of: (a) providing a support substrate; (b) epitaxially growing a first semiconductor layer on the support substrate; (c) epitaxially growing a second semiconductor layer on the first semiconductor layer; and (d) forming a semiconductor substrate including the first semiconductor layer and the second semiconductor layer by removing the support substrate, wherein an interatomic distance of atoms of the support substrate to which atoms of the first semiconductor layer attach and an interatomic distance of atoms of the second semiconductor layer have the same magnitude relationship with respect to an interatomic distance of the atoms of the first semiconductor layer in an epitaxial growth plane.
摘要翻译：本发明的半导体衬底的制造方法包括以下步骤：（a）提供支撑衬底; （b）在所述支撑基板上外延生长第一半导体层; （c）在第一半导体层上外延生长第二半导体层; 以及（d）通过去除所述支撑衬底来形成包括所述第一半导体层和所述第二半导体层的半导体衬底，其中所述第一半导体层的原子附着到所述支撑衬底的原子与原子间的原子间距离第二半导体层在外延生长面中相对于第一半导体层的原子的原子间距离具有相同的大小关系。

10. 发明申请

US20060202211A1 Method for fabricating light-emitting device utilizing substrate transfer by laser decomposition 审中-公开
标题翻译：利用激光分解利用基片转印制造发光器件的方法
公开(公告)号：US20060202211A1
公开(公告)日：2006-09-14
申请号：US11433555
申请日：2006-05-15
申请人： Tetsuzo Ueda , Masaaki Yuri
发明人： Tetsuzo Ueda , Masaaki Yuri
IPC分类号： H01L33/00 , H01L31/12
CPC分类号： H01L33/0079 , H01L33/145 , H01L33/387 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/14
摘要： A light-emitting device includes an element structure including at least two semiconductor layers having mutually different conductivity types. A transparent p-side electrode of ITO is formed on the element structure. A bonding pad is formed on a region of the p-side electrode. An n-side electrode made of Ti/Au is formed on the surface of the element structure opposite to the p-side electrode. A metal film made of gold plating with a thickness of about 50 μm is formed, using an Au layer in the n-side electrode as an underlying layer.
摘要翻译：发光器件包括具有至少两个具有不同导电类型的半导体层的元件结构。在元件结构上形成ITO的透明p侧电极。在p侧电极的区域上形成接合焊盘。在与p侧电极相反的元件结构的表面上形成由Ti / Au构成的n侧电极。使用n侧电极中的Au层作为下层，形成厚度为50μm左右的由镀金制成的金属膜。

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