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1. 发明授权

US07884423B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07884423B2
公开(公告)日：2011-02-08
申请号：US12134516
申请日：2008-06-06
申请人： Kunihiko Iwamoto , Arito Ogawa , Yuuichi Kamimuta
发明人： Kunihiko Iwamoto , Arito Ogawa , Yuuichi Kamimuta
IPC分类号： H01L21/70 , H01L21/8238
CPC分类号： H01L29/517 , C23C16/45529 , C23C16/45531 , H01L21/28194 , H01L21/3141 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/823857 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/513
摘要： CMISFETs having a symmetrical flat band voltage, the same gate electrode material, and a high permittivity dielectric layer is provided for a semiconductor device including n-MISFETs and p-MISFETs, and a fabrication method thereof, the n-MISFETs including: a first metal oxide layer 20, placed on the 1st gate insulating film 16, having a composition ratio shown with M1xM2yO (where M1=Y, La, Ce, Pr, Nd, Sm, Gd, Th, Dy, Ho, Er, Tm, Yb or Lu, M2=Hf, Zr or Ta, and x/(x+y)>0.12); a second metal oxide layer 24; and a second metal oxide layer 24, the p-MISFETs including: a second gate insulating film 18 placed on the surface of the semiconductor substrate 10; a third metal oxide layer 22, placed on the 2nd gate insulating film 18, having a composition ratio shown with M3zM4wO (M3=Al, M4=Hf, Zr or Ta, and z/(z+w)>0.14); a fourth metal oxide layer 26; and a second conductive layer 30 placed on the fourth metal oxide layer 26.
摘要翻译：对于包括n-MISFET和p-MISFET的半导体器件及其制造方法，提供具有对称平带电压的CMISFET，相同的栅电极材料和高介电常数介电层及其制造方法，所述n-MISFET包括：第一金属（M1 = Y，La，Ce，Pr，Nd，Sm，Gd，Th，Dy，Ho，Er，Tm，Yb或...的组成比）放置在第1栅极绝缘膜16上的氧化物层20 Lu，M2 = Hf，Zr或Ta，x /（x + y）> 0.12）; 第二金属氧化物层24; 和第二金属氧化物层24，p-MISFET包括：放置在半导体衬底10的表面上的第二栅极绝缘膜18; 放置在第二栅极绝缘膜18上的第三金属氧化物层22具有M3zM4wO（M3 = Al，M4 = Hf，Zr或Ta，z /（z + w）> 0.14）所示的组成比; 第四金属氧化物层26; 以及放置在第四金属氧化物层26上的第二导电层30。

2. 发明申请

US20080303099A1 Semiconductor Device and Fabrication Method Thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080303099A1
公开(公告)日：2008-12-11
申请号：US12134516
申请日：2008-06-06
申请人： Kunihiko Iwamoto , Arito Ogawa , Yuuichi Kamimuta
发明人： Kunihiko Iwamoto , Arito Ogawa , Yuuichi Kamimuta
IPC分类号： H01L29/423 , H01L21/8238
CPC分类号： H01L29/517 , C23C16/45529 , C23C16/45531 , H01L21/28194 , H01L21/3141 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/823857 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/513
摘要： CMISFETs having a symmetrical flat band voltage, the same gate electrode material, and a high permittivity dielectric layer is provided for a semiconductor device including n-MISFETs and p-MISFETs, and a fabrication method thereof, the n-MISFETs including: a first metal oxide layer 20, placed on the 1st gate insulating film 16, having a composition ratio shown with M1xM2yO (where M1=Y, La, Ce, Pr, Nd, Sm, Gd, Th, Dy, Ho, Er, Tm, Yb or Lu, M2=Hf, Zr or Ta, and x/(x+y)>0.12); a second metal oxide layer 24; and a second metal oxide layer 24, the p-MISFETs including: a second gate insulating film 18 placed on the surface of the semiconductor substrate 10; a third metal oxide layer 22, placed on the 2nd gate insulating film 18, having a composition ratio shown with M3zM4wO (M3=Al, M4=Hf, Zr or Ta, and z/(z+w)>0.14); a fourth metal oxide layer 26; and a second conductive layer 30 placed on the fourth metal oxide layer 26.
摘要翻译：对于包括n-MISFET和p-MISFET的半导体器件及其制造方法，提供具有对称平带电压的CMISFET，相同的栅电极材料和高介电常数介电层及其制造方法，所述n-MISFET包括：第一金属（M1 = Y，La，Ce，Pr，Nd，Sm，Gd，Th，Dy，Ho，Er，Tm，Yb或...的组成比）放置在第1栅极绝缘膜16上的氧化物层20 Lu，M2 = Hf，Zr或Ta，x /（x + y）> 0.12）; 第二金属氧化物层24; 和第二金属氧化物层24，p-MISFET包括：放置在半导体衬底10的表面上的第二栅极绝缘膜18; 放置在第二栅极绝缘膜18上的第三金属氧化物层22具有M3zM4wO（M3 = Al，M4 = Hf，Zr或Ta，z /（z + w）> 0.14）所示的组成比; 第四金属氧化物层26; 以及放置在第四金属氧化物层26上的第二导电层30。

3. 发明授权

US08367560B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08367560B2
公开(公告)日：2013-02-05
申请号：US12155773
申请日：2008-06-10
申请人： Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
发明人： Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
IPC分类号： H01L21/31 , H01L21/469 , B05C11/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45527 , C23C16/481 , C23C16/54 , H01L21/02148 , H01L21/02181 , H01L21/28194 , H01L21/3105 , H01L21/3141 , H01L21/67207 , H01L29/4975 , H01L29/513 , H01L29/517
摘要： A semiconductor device manufacturing method includes the steps of forming a silicate film by performing a first step of forming a metal oxide film on a silicon substrate, and a second step of inducing a solid phase reaction between the metal oxide film and a surface of the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.
摘要翻译：半导体器件制造方法包括以下步骤：通过在硅衬底上形成金属氧化物膜的第一步骤形成硅酸盐膜，以及在金属氧化物膜和硅表面之间引起固相反应的第二步骤通过热处理，在硅酸盐膜上形成高介电常数绝缘膜。

4. 发明申请

US20080318442A1 Semiconductor device manufacturing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US20080318442A1
公开(公告)日：2008-12-25
申请号：US12155773
申请日：2008-06-10
申请人： Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
发明人： Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
IPC分类号： H01L21/469 , B05C11/00
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45527 , C23C16/481 , C23C16/54 , H01L21/02148 , H01L21/02181 , H01L21/28194 , H01L21/3105 , H01L21/3141 , H01L21/67207 , H01L29/4975 , H01L29/513 , H01L29/517
摘要： The present invention has an object of providing a substrate processing apparatus and a semiconductor device manufacturing method that can prevent adverse effects on electrical characteristics and provide a thinner EOT.A semiconductor device manufacturing method comprises the steps of: forming a metal oxide film on a silicon substrate, and forming a silicate film by inducing a solid phase reaction between the metal oxide film and the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.
摘要翻译：本发明的目的是提供一种可以防止对电气特性的不利影响并提供更薄的EOT的衬底处理装置和半导体器件制造方法。半导体器件制造方法包括以下步骤：在硅衬底上形成金属氧化物膜，并通过热处理在金属氧化物膜和硅衬底之间引起固相反应形成硅酸盐膜，并形成高介电常数硅酸盐膜上的绝缘膜。

5. 发明授权

US08937022B2 Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，基板处理方法及基板处理装置
公开(公告)号：US08937022B2
公开(公告)日：2015-01-20
申请号：US13990282
申请日：2011-11-29
申请人： Arito Ogawa
发明人： Arito Ogawa
IPC分类号： H01L21/318 , C23C16/08 , C23C16/34 , C23C16/455 , H01L21/285 , H01L21/28 , H01L29/49
CPC分类号： H01L21/318 , C23C16/08 , C23C16/34 , C23C16/45523 , C23C16/45527 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L29/4966
摘要： A method of manufacturing a semiconductor device includes: housing a substrate into a processing chamber; and forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas and a hydrogen-containing gas into the processing chamber; wherein in forming the metal nitride film, the source gas and the nitrogen-containing gas are intermittently supplied into the processing chamber, or the source gas and the nitrogen-containing gas are intermittently and alternately supplied into the processing chamber, or the source gas is intermittently supplied into the processing chamber in a state that supply of the nitrogen-containing gas into the processing chamber is continued, and the hydrogen-containing gas is supplied into the processing chamber during at least supply of the nitrogen-containing gas into the processing chamber.
摘要翻译：制造半导体器件的方法包括：将衬底容纳到处理室中; 以及通过将含有金属元素，含氮气体和含氢气体的源气体供给到所述处理室中而在所述基板上形成金属氮化物膜; 其中，在形成金属氮化物膜时，将源气体和含氮气体间歇地供给到处理室，或者将源气体和含氮气体间歇地交替地供给到处理室中，或者源气体为在将含氮气体供应到处理室中的状态下连续地供给到处理室中，并且在至少将含氮气体供应到处理室中之前将含氢气体供应到处理室中。

6. 发明申请

US20110003482A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM 有权
标题翻译：制造半导体器件和衬底加工系统的方法
公开(公告)号：US20110003482A1
公开(公告)日：2011-01-06
申请号：US12825012
申请日：2010-06-28
申请人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
发明人： Arito Ogawa , Sadayoshi Horii , Taketoshi SATO , Hideharu Itatani , Nobuyuki MISE , Osamu Tonomura
IPC分类号： H01L21/314 , B05C11/10
CPC分类号： H01L21/31616 , C23C16/303 , C23C16/403 , C23C16/45525 , C23C16/54 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/0228 , H01L21/3141 , H01L21/31604 , H01L21/318 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L28/40
摘要： Provided is a method of manufacturing a semiconductor device. In the method, an aluminium-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminium precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminium precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminium-containing insulation film is formed on the aluminium-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，通过交替地重复将铝前体供给到容纳基板的处理室中并从处理室排出铝前体的工序，在基板的电极膜上形成含铝绝缘膜，将氧化或氮化前体供应到处理室中并从处理室排出氧化或氮化前体的过程; 并且在含铝绝缘膜上形成与含铝绝缘膜不同的高介电常数绝缘膜，通过交替重复将前体供给到处理室中并从处理室排出前体的过程，氧化前体进入处理室并从处理室排出氧化前体。另外，对基板进行热处理。

7. 发明申请

US20130309876A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法，基板处理方法和基板处理装置
公开(公告)号：US20130309876A1
公开(公告)日：2013-11-21
申请号：US13990282
申请日：2011-11-29
申请人： Arito Ogawa
发明人： Arito Ogawa
IPC分类号： H01L21/318
CPC分类号： H01L21/318 , C23C16/08 , C23C16/34 , C23C16/45523 , C23C16/45527 , H01L21/28088 , H01L21/28556 , H01L21/28562 , H01L29/4966
摘要： A method of manufacturing a semiconductor device includes: housing a substrate into a processing chamber; and forming a metal nitride film on the substrate by supplying a source gas containing a metal element, a nitrogen-containing gas and a hydrogen-containing gas into the processing chamber; wherein in forming the metal nitride film, the source gas and the nitrogen-containing gas are intermittently supplied into the processing chamber, or the source gas and the nitrogen-containing gas are intermittently and alternately supplied into the processing chamber, or the source gas is intermittently supplied into the processing chamber in a state that supply of the nitrogen-containing gas into the processing chamber is continued, and the hydrogen-containing gas is supplied into the processing chamber during at least supply of the nitrogen-containing gas into the processing chamber.
摘要翻译：制造半导体器件的方法包括：将衬底容纳到处理室中; 以及通过将含有金属元素，含氮气体和含氢气体的源气体供应到所述处理室中而在所述基板上形成金属氮化物膜; 其中，在形成金属氮化物膜时，将源气体和含氮气体间歇地供给到处理室，或者将源气体和含氮气体间歇地交替地供给到处理室中，或者源气体为在将含氮气体供应到处理室中的状态下连续地供给到处理室中，并且在至少将含氮气体供应到处理室中之前将含氢气体供应到处理室中。

8. 发明授权

US08951912B2 Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer-readable recording medium 有权
公开(公告)号：US08951912B2
公开(公告)日：2015-02-10
申请号：US13616148
申请日：2012-09-14
申请人： Arito Ogawa , Tsuyoshi Takeda
发明人： Arito Ogawa , Tsuyoshi Takeda
IPC分类号： H01L21/44 , H01L21/02 , C23C14/14 , C23C16/36 , C23C16/455 , H01L21/28
CPC分类号： C23C16/36 , C23C14/14 , C23C16/22 , C23C16/45531 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/52 , H01L21/02521 , H01L21/0262 , H01L21/28088 , H01L21/28556 , H01L21/28568 , H01L21/76877
摘要： A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

9. 发明授权

US08420552B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08420552B2
公开(公告)日：2013-04-16
申请号：US12847328
申请日：2010-07-30
申请人： Yuji Takebayashi , Hirohisa Yamazaki , Sadayoshi Horii , Hideharu Itatani , Arito Ogawa
发明人： Yuji Takebayashi , Hirohisa Yamazaki , Sadayoshi Horii , Hideharu Itatani , Arito Ogawa
IPC分类号： H01L21/31
CPC分类号： H01L21/02172 , C23C16/40 , C23C16/45546 , C23C16/56 , H01L21/02178 , H01L21/02181 , H01L21/02189 , H01L21/02194 , H01L21/0228 , H01L21/02356 , H01L21/3142 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L21/67017 , H01L21/67103 , H01L28/40
摘要： A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
摘要翻译：形成了在较高温度下稳定的高k电容绝缘膜。提供了制造半导体器件的方法。该方法包括：在衬底上形成包含第一元件的第一非晶绝缘膜; 向所述第一非晶绝缘膜添加与所述第一元素不同的第二元素，以在所述基板上形成第二非晶绝缘膜; 以及在预定退火温度下退火所述第二非晶绝缘膜，以便通过改变所述第二非晶绝缘膜的相位形成第三绝缘膜。根据退火温度控制添加到第一非晶绝缘膜中的第二元素的浓度。

10. 发明申请

US20130065391A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND COMPUTER-READABLE RECORDING MEDIUM 有权
公开(公告)号：US20130065391A1
公开(公告)日：2013-03-14
申请号：US13616148
申请日：2012-09-14
申请人： Arito Ogawa , Tsuyoshi Takeda
发明人： Arito Ogawa , Tsuyoshi Takeda
IPC分类号： H01L21/283 , C23C16/22
CPC分类号： C23C16/36 , C23C14/14 , C23C16/22 , C23C16/45531 , C23C16/45546 , C23C16/45557 , C23C16/46 , C23C16/52 , H01L21/02521 , H01L21/0262 , H01L21/28088 , H01L21/28556 , H01L21/28568 , H01L21/76877
摘要： A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.

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